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Microchip's Ganesh Moorthy to Retire as CEO, President and a Member of the Board of Directors

Microchip’s Ganesh Moorthy to Retire as CEO, President and a Member of the Board of Directors

November 19, 2024 Comments Off on Microchip’s Ganesh Moorthy to Retire as CEO, President and a Member of the Board of Directors
Wolfspeed Announced Management Change

Wolfspeed Announced Management Change

November 18, 2024 Comments Off on Wolfspeed Announced Management Change
Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format

Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format

November 12, 2024 Comments Off on Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format
Mitsubishi Electric to Sample SiC Bare Die

Mitsubishi Electric to Sample SiC Bare Die

November 12, 2024 Comments Off on Mitsubishi Electric to Sample SiC Bare Die
Infineon Technologies and Stellantis to Develop Next Generation of Power Architecture

Infineon Technologies and Stellantis to Develop Next Generation of Power Architecture

November 7, 2024 Comments Off on Infineon Technologies and Stellantis to Develop Next Generation of Power Architecture
Infineon Technologies Delivers Thinnest Si Power Wafer ever Made

Infineon Technologies Presented Thinnest Si Power Wafer ever Made

October 29, 2024 Comments Off on Infineon Technologies Presented Thinnest Si Power Wafer ever Made
Texas Instruments Began Production of GaN Power Semiconductors in Japan

Texas Instruments Began Production of GaN Power Semiconductors in Japan

October 25, 2024 Comments Off on Texas Instruments Began Production of GaN Power Semiconductors in Japan
Infineon Technologies Introducing HybridPACK™ Drive G2 Fusion

Infineon Technologies Introducing HybridPACK™ Drive G2 Fusion

October 15, 2024 Comments Off on Infineon Technologies Introducing HybridPACK™ Drive G2 Fusion

Latest News

Mitsubishi Electric to Build a New Power Semiconductor Modules Facility
LATEST NEWS

Mitsubishi Electric to Build a New Power Semiconductor Modules Facility

November 20, 2024 Comments Off on Mitsubishi Electric to Build a New Power Semiconductor Modules Facility
2 Min Read

Mitsubishi Electric Corporation announced that it will invest approximately 10 billion yen to construct a new facility for the assembly and inspection of power semiconductor modules at its Power Device Works in Fukuoka Prefecture, Japan. The plant, which was originally announced on March 14, 2023, is scheduled to begin operations in October 2026.

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Microchip's Ganesh Moorthy to Retire as CEO, President and a Member of the Board of Directors

Microchip’s Ganesh Moorthy to Retire as CEO, President and a Member of the Board of Directors

November 19, 2024 Comments Off on Microchip’s Ganesh Moorthy to Retire as CEO, President and a Member of the Board of Directors
Wolfspeed Announced Management Change

Wolfspeed Announced Management Change

November 18, 2024 Comments Off on Wolfspeed Announced Management Change
Ideal Power Published Q3 2024 Financial Results

Ideal Power Published Q3 2024 Financial Results

November 15, 2024 Comments Off on Ideal Power Published Q3 2024 Financial Results
Infineon Technologies Released New OptiMOS™ 5 Linear FET 2

Infineon Technologies Released New OptiMOS™ 5 Linear FET 2

November 14, 2024 Comments Off on Infineon Technologies Released New OptiMOS™ 5 Linear FET 2
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WBG NEWS

Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format

Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format

November 12, 2024 Comments Off on Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format
Mitsubishi Electric to Sample SiC Bare Die

Mitsubishi Electric to Sample SiC Bare Die

November 12, 2024 Comments Off on Mitsubishi Electric to Sample SiC Bare Die
Cambridge GaN Devices and IFP Energies nouvelles Developed a Demo which Confirms Suitability ICeGaN® 650 V in a Multi-Level 800 VDC Inverter

Cambridge GaN Devices and IFP Energies nouvelles Developed a Demo which Confirms Suitability ICeGaN® 650 V in a Multi-Level 800 VDC Inverter

November 12, 2024 Comments Off on Cambridge GaN Devices and IFP Energies nouvelles Developed a Demo which Confirms Suitability ICeGaN® 650 V in a Multi-Level 800 VDC Inverter

ROHM Developed Surface Mount SiC Schottky Barrier Diodes that Improve Insulation Resistance by Increasing Creepage Distance between Terminals

November 12, 2024 Comments Off on ROHM Developed Surface Mount SiC Schottky Barrier Diodes that Improve Insulation Resistance by Increasing Creepage Distance between Terminals
Cambridge GaN Devices and Qorvo® Partner to Bring Industry-Leading Motor Control and Power Efficiency Technologies in PAC5556A + ICeGaN® EVK

Cambridge GaN Devices and Qorvo® Partner to Bring Industry-Leading Motor Control and Power Efficiency Technologies in PAC5556A + ICeGaN® EVK

November 11, 2024 Comments Off on Cambridge GaN Devices and Qorvo® Partner to Bring Industry-Leading Motor Control and Power Efficiency Technologies in PAC5556A + ICeGaN® EVK
EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience

EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience

November 8, 2024 Comments Off on EPC Prevails as U.S. ITC Affirms Determination of Patent Infringement by Innoscience
Infineon Technologies and Stellantis to Develop Next Generation of Power Architecture

Infineon Technologies and Stellantis to Develop Next Generation of Power Architecture

November 7, 2024 Comments Off on Infineon Technologies and Stellantis to Develop Next Generation of Power Architecture
STMicroelectronics Released an Advanced Galvanically Isolated Gate Drivers for IGBTs and SiC MOSFETs

STMicroelectronics Released an Advanced Galvanically Isolated Gate Drivers for IGBTs and SiC MOSFETs

November 7, 2024 Comments Off on STMicroelectronics Released an Advanced Galvanically Isolated Gate Drivers for IGBTs and SiC MOSFETs
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PRODUCT & TECHNOLOGY NEWS

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Infineon Technologies Released New OptiMOS™ 5 Linear FET 2
LATEST NEWSPRODUCT & TECHNOLOGY

Infineon Technologies Released New OptiMOS™ 5 Linear FET 2

November 14, 2024 Comments Off on Infineon Technologies Released New OptiMOS™ 5 Linear FET 2
2 Min Read

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R DS(on). Infineon Technologies AG addresses this challenge with the new OptiMOS™ 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET.

Continue Reading →
Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format
LATEST NEWSPRODUCT & TECHNOLOGYSiCTOP STORIESWBG

Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format

November 12, 2024 Comments Off on Toshiba to Sample 1200V SiC MOSFETs in Bare Die Format
3 Min Read

Toshiba Electronics Europe GmbH has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices are particularly suited to applications within automotive traction inverters. They are now available and shipping as early test samples in bare die format – allowing customers to customise them to meet the needs of their applications.

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Power Semiconductors Weekly Vol 127

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