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Diodes Incorporated (Diodes) introduced the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers.
The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (RθJC = 0.6°C/W), making it well-suited for applications running in harsh environments. This MOSFET has a low RDS(ON) (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.
This product is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.
Original – Diodes Incorporated
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Toshiba Electronic Devices & Storage Corporation has launched a 150V N-channel power MOSFET “TPH9R00CQ5,” which uses the latest generation U-MOSX-H process, for switching power supplies of industrial equipment, such as that used in data centers and communications base stations.
TPH9R00CQ5 features an industry-leading low drain-source On-resistance of 9.0mΩ (max), approximately a 42% reduction from Toshiba’s existing product, “TPH1500CNH1.” Compared with Toshiba’s existing product “TPH9R00CQH,” the reverse recovery charge is reduced by about 74% and the reverse recovery time by about 44%, both key reverse recovery characteristics for synchronous rectification applications. Used in synchronous rectification applications, the new product reduces the power loss of switching power supplies and helps improve efficiency. Furthermore, compared to TPH9R00CQH, the new product reduces spike voltage generated during switching, helping lower the EMI of power supplies.
The product uses the popular, surface-mount-type SOP Advance(N) package.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available.
Toshiba has also developed “1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunications Equipment” and “Three-phase Multi Level Inverter using MOSFET” reference designs that utilize the new product. They are available on Toshiba’s website from today. The new product can also be utilized for the already published “1 kW Full-Bridge DC-DC Converter” reference design.
Toshiba will continue to expand its lineup of power MOSFETs that reduce power loss, increase the efficiency of power supplies, and help to improve equipment efficiency.
Applications:
- Power supplies of industrial equipment, such as that used in data centers and communications base stations.
- Switching power supplies (high efficiency DC-DC converters, etc.)
Features:
- Industry-leading low On-resistance: RDS(ON)=9.0mΩ (max) (VGS=10V)
- Industry-leading low reverse recovery charge: Qrr=34nC (typ.) (-dIDR/dt=100A/μs)
- Industry-leading fast reverse recovery time: trr=40ns (typ.) (-dIDR/dt=100A/μs)
- High channel temperature rating: Tch (max)=175°C
Original – Toshiba
