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onsemi, a leader in intelligent power and sensing technologies, and premium electric mobility brand ZEEKR announced a long-term supply agreement (LTSA) between the two companies. onsemi will provide its EliteSiC silicon carbide (SiC) power devices to increase the powertrain efficiency of ZEEKR’s smart electric vehicles (EVs), resulting in improved performance, faster charging speeds and extended driving range.
To support its expanding portfolio of high-performance EVs, ZEEKR will adopt onsemi EliteSiC MOSFET, 1200V, M3E with enhanced electrical and mechanical performance and reliability. These power devices deliver improved power and thermal efficiency, which reduces the size and weight of the traction inverter and enhances the range of the automaker’s EVs.
“With cutting-edge technologies such as advanced SiC, ZEEKR will be able to offer electric vehicles with improved performance and even lower carbon emissions,” said Andy An, CEO of ZEEKR Intelligent Technology. “As a brand committed to sustainability, ZEEKR will continue to explore different ways to accelerate the transition towards new energy vehicles.”
The new LTSA will enable both companies to build a stronger supply chain relationship to support ZEEKR’s growth over the next decade.
“A reliable supply chain is critical to business success and, after significant investments in our SiC end-to-end supply chain, onsemi can offer this strategic value to customers,” said Hassane El-Khoury, president and CEO, onsemi. “This agreement will help our continued ramp of SiC operations, enabling us to offer industry-leading power devices that help our customers deploy the most efficient and highest performing EVs on the market.”
ZEEKR is a premium electric mobility brand built to address the global demand for premium EVs. Utilizing Geely’s advanced Sustainable Experience Architecture (SEA), ZEEKR develops in-house battery technologies, battery management systems, electric motor technologies and electric vehicle supply chain support.
Original – onsemi
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Mitsubishi Electric Corporation announced that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May31, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. The dual-type module, which achieves 4.5kV withstand voltage and 10.2kVrms dielectric strength, is rated at 450A, which is believed to be unmatched among 4.5kV silicon HVIGBT modules.
Power semiconductors are increasingly being utilized to efficiently convert electric power in order to lower the carbon footprint of global society, particularly in heavy industry, where these devices are used in power-conversion equipment such as inverters in railway traction systems and for DC power transmission. In response to the growing demand for devices offering high output, high efficiency and wide-ranging output capacity, Mitsubishi Electric released two versions (3.3kV/450A and 3.3kV/600A) of its HV100 dual-type X-Series high-dielectric-strength HVIGBT module in 2021. In the near future, the forthcoming HV100 dual-type X-Series module will contribute to even higher output, higher efficiency and improved system reliability for inverters used in large industrial equipment requiring high dielectric strength.
Original – Mitsubishi Electric
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Semiconductor Power Electronics Center (SPEC) designed, fabricated, and characterized an implantation-free 3 kV 4H-SiC Bipolar Junction Transistor (BJT). With a 40μm-wide Four-step Junction Termination Extension (JTE), an open base breakdown voltage (BVCEO) and an open emitter breakdown voltage (BVCBO) of more than 3000V are measured. The total width of the JTE is less than two times of the drift thickness (23μm), which can be considered as highly area efficient.
The designed BJT has a 1.2μm narrow base width with 1×1017cm-3 doping, where implantation-free Ohmic contact was achieved. The BJT exhibits an excellent on-resistance of 6.7mΩ·cm2 for small-size devices and an on-resistance of 39.7mΩ·cm2 for large-size devices. The measured current gain for devices with additional anneal process is 21.
Original – Semiconductor Power Electronics Center
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Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regards to the implementation of silicon carbide (SiC) inside power modules. Recently, Semikron Danfoss added ROHM’s new 1200V RGA IGBT to its low power module offering. In doing so, both companies show that they remain committed to serving worldwide motor drive customers’ needs.
The worldwide growth in electrification technologies has created unprecedented demand for power modules. Often, it is the chip supply that limits power module availability. Despite ongoing investments in production capacity by the chip manufacturers, the supply situation remains tight. It is against this backdrop that ROHM has introduced the new 1200V RGA IGBT, targeted as an alternative to the latest Generation 7 IGBT devices in industrial applications. ROHM is now expanding their bare die offering to Semikron Danfoss, positioning themselves as an advanced alternative to traditional chip suppliers.
“The RGA is a newly designed, light punch through, trench gate IGBT with Tj,max = 175°C. The conduction, switching, and thermal characteristics are optimized for new industrial drive applications in the low to medium power range. At the same time, the RGA is intended to remain compatible with existing IGBT solutions, enabling a multiple source approach. In addition, the RGA can also be used to improve transient overcurrent handling during overload conditions in motor drive applications,” says Kazuhide Ino, Member of the Board, Managing Executive Officer, CFO at ROHM.
Semikron Danfoss can offer the 1200V RGA IGBT in a full range of nominal current classes from 10A to 150A. This range, combined with the suitability of the RGA chip in motor drive applications, means that the MiniSKiiP family is the ideal choice for module implementation. The baseplate-less, spring-contact MiniSKiiP is already deeply embedded in the worldwide motor drive market and always equipped with the latest generation IGBTs. Therefore, it is important for this product to have an alternative IGBT source to diversify the supply chain. The uniform-height MiniSKiiP housing family is also offered on the market as a multiple source package, making an alternative IGBT a valuable option for manufacturers.
For press-fit/solder applications, the industry-standard SEMITOP E package will also be available in pin-compatible configurations to existing Generation 7 IGBT module offerings. This housing family will also offer sixpack (“GD”) and converter-inverter-brake (“DGDL”) circuit configurations.
“The power electronics industry continues to recover and learn lessons from the supply issues in recent years. It’s clear that diversification in semiconductor chip and module manufacturing is required to generate true ‘multiple source’ power modules”, says Claus A. Petersen, President, Semikron Danfoss. “In the case of 1200V Generation 7 IGBTs, a reliable equivalent from a reputable manufacturer is now available to address this issue also in the low power range. The 1200V RGA IGBT from ROHM is a perfect alternative to the Generation 7 IGBT and can be made to behave in a remarkably similar manner with small gate resistor adjustment,” continues Peter Sontheimer, Senior Vice President Industry Division & Managing Director at Semikron Danfoss.
Original – Semikron Danfoss
