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Edgar Chen, the COO of PANJIT International Inc., will be interviewed by the chief editor of eefocus on July 11th at 15:00 at electronica China 2023. The interview will also be live-streamed online. The main focus of the interview will be on the market prospects of the semiconductor industry and the potential of PANJIT’s high-performance products in the electric vehicle, industrial control, and alternative energy sectors.
Are you curious about how PANJIT seizes opportunities and establishes a prominent presence in the automotive and industrial control markets despite the decline in consumer electronics demands? Interested in exploring PANJIT’s impressive range of high-power components like MOSFETs, IGBTs, SiC diodes, and power management ICs, along with the exciting opportunities they bring to alternative energy-related markets such as electric vehicles, charging stations, energy storage systems, and solar energy? Or perhaps you are interested in knowing about PANJIT’s key strengths and its product development strategy for the next few years?
Don’t miss the live-streamed interview on July 11th to gain valuable insights into the semiconductor industry!
Original – PANJIT International
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Transphorm, Inc. responded to the recent news regarding China export restrictions. Late Monday, July 3, 2023, China’s Ministry of Commerce stated that it will restrict the exports of materials related to two metals used in semiconductor manufacturing: gallium and germanium. Gallium nitride (GaN) wafer materials are listed as being affected by these regulations.
Transphorm manufactures high voltage GaN power semiconductors. Trimethylgallium (TMGa) is used to produce the GaN. The company confirmed that its primary TMGa suppliers are not based in China and that suppliers have confirmed to be well-positioned to meet forecasted demand. Transphorm is therefore securely positioned to continue manufacturing and supplying its GaN devices without interruption.
Transphorm also explained gallium is generally a byproduct resulting from refinement processes used to produce popular metals such as aluminum from bauxite ore. Aluminum is produced in numerous countries such as Australia, Brazil, India, Jamaica, and the United States among others.
Transphorm will continue to the monitor the situation as necessary but sees no direct impact on its current operations. Nor does the company see long-term sourcing issues.
Original – Transphorm
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STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.
The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15V. Capable of sinking and sourcing up to 3A gate current to the connected GaN transistor, the driver ensures tightly controlled switching transitions up to high operating frequencies.
With minimal propagation delay across the isolation barrier, at just 45ns, the STGAP2GS ensures fast dynamic response. In addition, dV/dt transient immunity of ±100V/ns over the full temperature range guards against unwanted transistor gate change. The STGAP2GS is available with separate sink and source pins for easy tuning of the gate-driving operation and performance.
Saving the need for discrete components to provide optical isolation, the STGAP2GS driver eases the adoption of efficient and robust GaN technology in various consumer and industrial applications. These include power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans, and wireless chargers.
In addition to integrating galvanic isolation, the driver also features built-in system protection including thermal shutdown and under-voltage lockout (UVLO) optimized for GaN technology, to ensure reliability and ruggedness.
Two demonstration boards, the EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and narrow STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-Mode GaN transistors to help users evaluate the drivers’ capabilities.
The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now, priced from $1.42 for orders of 1000 pieces.
Please visit www.st.com/stgap2gs for more information.
Original – STMicroelectronics
