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SiC power devices are changing and reshaping many industries today, providing numerous benefits over fundamental silicon-based semiconductors. One of the key advantages is a dramatically reduced power losses with increased efficiency achieved through silicon carbide exceptional material properties. SiC power semiconductors can operate at higher frequencies and temperatures delivering higher power densities and reduced cooling requirements. One of the industries benefiting much from the use of SiC power devices is the energy storage.
Adopting silicon carbide technology, energy storage systems can deliver great energy saving and much better overall system performance.
Reliability is one of the major requirements for any power electronics system, and ESS is no exception. That is why many ESS companies today choose SiC technology over Si. Silicon carbide power devices provide increased robustness and resistance when it comes to operating in extreme conditions. SiC temperature robustness allows to eliminate the risk of the system overheating – one of the major reasons for failure.
Leading the development process of SiC power devices for a variety of emerging applications including vehicle electrification, photovoltaics, and, of course, battery energy storage systems, Leapers Semiconductor is expanding its portfolio of the hybrid modules with the 3-level power module to provide increased reliability for the ESS, solar, and the other 3-level applications.
The all new DFH10AL12EZC1 power module integrates 1200V SiC MOSFET chips and 1200V IGBT chips in E2 package designed to correspond to high requirements set by the above-mentioned applications.
Leapers Semiconductor DFH10AL12EZC1 hybrid power module features:
- Blocking voltage:1200V
- Rds(on): 9.5mΩ (VGS =15V)/8.3mΩ (VGS =18V)
- Low Switching Losses
- High current density
- Press FIT Contact Technology
- 175°C maximum junction temperature
- Thermistor inside
DFH10AL12EZC1 hybrid power modules guarantee the enhanced efficiency, improved power conversion, and increased overall reliability and durability with reduced system size.
The other applications that will benefit from DFH10AL12EZC1 include:
- Solar inverter Systems
- Three-level Systems
- Energy Storage Systems
- High Frequency Switching Systems
Original – Leapers Semiconductor
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The opening ceremony of WeEnwin Jinshan Module Plant was held in the Shanghai Jinshan High-tech Industrial Development Zone. The ceremony marked the official commencement of WeEn’s world-first module plant, intended to produce various types of power module products utilized in consumer electronics, communications, new energy, and automotive applications. The products connect customers and the ecosystems, actively fostering the high-quality development of the industry.
Markus Mosen, WeEn Semiconductors Co., Ltd. CEO; Chen Song, COO; Tang Ziming, CFO; Wu Rui, CHRO; Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd; Zhao Fei, deputy director of the Jinshan District Development and Reform Commission; Cao Qin, deputy director of the Jinshan District Investment Promotion Office; other relevant department heads of the New Jinshan Development Company; WeEn boards Zhang Xinyu, Chang Liang, and Zhu Fenglin; together with representatives from WeEn’s global partners, numerous customers, vendors, approximately 200 guests attended the event to personally witness this historic step in WeEn’s new journey.
Located in the Shanghai Bay Area High-tech Industrial and Development Zone, WeEn Jinshan Module Plant covers an area of 11,000 square meters. The construction of the plant began in August 2022. Eight months later in April 2023, the building quality and fire inspection compliance tests were successfully completed.
WeEn Semiconductors Co., Ltd. has invested approximately RMB 200 million in the wholly-owned new Jinshan Module Plant, which has introduced over a hundred of the industry’s most advanced power module production and testing equipment to meet the market’s mainstream demand for various types of module products.
It is worth underscoring that the newly established WeEnwin Module Plant has simultaneously set up an advanced packaging R&D center to develop and mass produce cutting-edge packaging technologies while researching the applicability of new materials.
To optimize efficiency and reliability, the fully automated module production line is equipped with top-notch processing capabilities, including lead-free chip bonding/silver sintering bonding, lead-free soldering/ultrasonic soldering of terminals, aluminum wire bonding, and copper tab connections. Currently, WeEnwin module plant. has obtained ISO9001 and IATF16949 certifications and undergone VDA6.3 process audits, evidence of the company’s robust system that guarantees top-quality products.
Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd, warmly congratulated WeEnwin for the opening, noting that the event was a testimony of the concerted efforts of all parties. He further stated that the collective endeavors have significant importance in elevating the power semiconductor industry’s development level and accelerating the concentration of the optoelectronic chip industry in the high-tech industrial and development zone.
In addition, he expressed his wish for the high-tech zone, as it embarks on its new era journey, to continue harnessing resources and efforts and attracting policies aimed at strengthening the innovation chain, extending the industrial chain, and improving the ecosystem.
Meanwhile, Markus Mosen, WeEn Semiconductors Co., Ltd. CEO stated, “Given the favorable winds, this is the perfect time to set sail.” WeEn’s investment in the world’s first module factory has successfully transitioned from planning to operation according to schedule. Therefore, we remain grateful for the strong support from the Jinshan District People’s Government, Shanghai Bay Area High-tech Industrial Development Zone, and FITA Tech.
There is no doubt that without the collective efforts of our partners and team, this accomplishment would not have been possible. At WeEnwin, we will seize the opportunities of the era, leverage our product and technological strengths, and provide reliable and efficient power semiconductor devices to our customers and partners. As we inject new impetus into pragmatic cooperation, we remain confident in our ability to propel the ship of power device development toward a new journey.”
The operation of the WeEnwin Jinshan Module plant will enhance the efficiency of WeEn Semiconductors Co., Ltd.’s entire industry chain layout and services. In addition to producing the most advanced SCR / FRD / IGBT / SIC modules, the factory will significantly improve the experience of customers and partners by offering innovative modules and packaging services for the automotive and renewable energy markets. It is projected that the first batch of products from the new Jinshan Module Factory for Chinese and overseas customers will be shipped in the fourth quarter of 2023.
Original – WeEn Semiconductors
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GaN Systems has partnered with ACEpower to expedite the widespread adoption of GaN technology in electric vehicles. By harnessing GaN Systems’ cutting-edge power semiconductors, extensive expertise in EV power electronics, and ACEpower’s exceptional track record in high-power system design and high-volume manufacturing capabilities, this partnership will accelerate the GaN-based electric vehicle power market in China.
GaN power semiconductors play a pivotal role in realizing the compact size, lightweight, and high efficiency demanded by the next generation of high-performance electric vehicles. By harnessing GaN Systems’ automotive-grade, high-performance GaN power transistors alongside ACEpower’s deep expertise in the power electronics industry, the companies are combining their distinctive capabilities to unlock the full potential of GaN performance advantages.
In addition to other areas, the partnership will focus on topology optimization and advanced integrated power modules, and high-frequency magnetics design to enhance crucial electric vehicle efficiency and power density significantly.
“We are delighted to announce our partnership with GaN Systems to accelerate GaN adoption in electric vehicles,” said Albert Wang, CEO of ACEpower. “Our longstanding relationship with GaN Systems, coupled with their unrivaled expertise in high reliability, automotive-qualified GaN semiconductors—a vital component for electric vehicles—brings great business opportunities in the fast growth Chinese EV market. Together, we are committed to driving innovation that will revolutionize electric vehicles, particularly in efficiency and power density, delivering substantial benefits to the industry.”
This combination tackles fundamental challenges related to traditionally larger, heavier, inefficient, and costlier power systems based on legacy silicon power transistors. GaN power transistors enable higher efficiency and power density at a faster switching speed for onboard chargers, DC/DC converters, and traction inverters. These advancements translate into faster charging, extended driving range, and reduced overall system costs.
“Today’s announcement marks a significant leap in our cooperative efforts with ACEpower to drive GaN adoption in the Chinese electric vehicle market,” said Jim Witham, CEO of GaN Systems. “This collaboration paves the way for disruptive and game-changing advancements in next-generation electric vehicles. Building upon our strong industry relationships with key players such as BMW, Toyota, and Vitesco, GaN Systems and ACEpower are poised to make a substantial impact in accelerating GaN adoption across the electric vehicle platform.”
GaN Systems and ACEpower’s shared vision extends to capturing substantial market value in emerging sectors such as data centers and electric vehicles. Future initiatives encompass the joint development of high-power density GaN-powered OBCs rated at 6.6kW and 11kW for electric vehicles, solidifying their commitment to driving innovation and advancing the power industry.
Original – GaN Systems
