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The electrification of the transportation system is advancing continuously. In addition to passenger cars, 2- and 3-wheelers as well as light vehicles are increasingly being electrified. Therefore, the automotive market for Electronic Control Units (ECUs) powered by 24 V-72 V is expected to keep growing in the coming years.
To address this development, Infineon Technologies AG is complementing its OptiMOS™ 5 portfolio of automotive MOSFETs in the 60 V and 120 V range with new products in the high power packages TOLL, TOLG and TOLT. They are offering a compact form factor with very good thermal performance combined with excellent switching behavior.
The six new products offer a narrowed gate threshold voltage (V GS(th)) enabling designs with parallel MOSFETs for increased output power capability. The IAUTN06S5N008, IAUTN06S5N008G and IAUTN06S5N008T are 60 V MOSFETs, and the IAUTN12S5N017, IAUTN12S5N018G and IAUTN12S5N018T are 120 V MOSFETs.
The on resistance (R DS(on)) ranges from 1.7 mΩ to 1.8 mΩ for the 120 V MOSFETs and is 0.8 mΩ for the 60 V MOSFETs. This makes the 60V MOSFETs perfectly suited for high power 24 V supplied CAV applications or for HV-LV DCDC converters in xEVs. The 120 V MOSFETs are used in 48 V – 72 V supplied traction inverters for 2- or 3-wheelers and light electric vehicles.
Original – Infineon Technologies
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Toshiba Electronic Devices & Storage Corporation has developed 2200 V silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) for photovoltaic (PV) inverters. A two-level inverter with the new devices realized higher frequency operation and lower power loss than a conventional three-level silicon (Si) insulated gate bipolar transistor (IGBT) inverter. The new MOSFETs also contribute to simplification of inverter systems and reductions in their size and weight.
Three-level inverters enjoy the advantage of low switching losses because the voltage applied to switching devices in the inverters during off-state is half the line voltage. Against this, two-level inverters have fewer switching modules than three-level inverters, realizing a simpler, smaller, and lighter system. However, they require semiconductors with higher breakdown voltage, as the applied voltage is equal to the line voltage. Also, demand for semiconductors with both low loss and high breakdown voltage is growing as 1500 V DC line voltage systems are introduced in photovoltaic and other renewable energy markets.
Toshiba Electronic Devices & Storage Corporation has developed 2200 V Schottky barrier diode (SBD)-embedded SiC MOSFETs for two-level inverters in 1500 V DC voltage systems. The impurity concentration and thickness of the drift layer has been optimized to maintain the same relationship between the on-resistance and the breakdown voltage as our existing products, and also to achieve high resistance to cosmic rays, a requirement for PV systems. It has also been confirmed that embedding SBDs clamped parasitic PN junctions between the p-base regions and the n-drift layer secure high reliability in reverse conduction.
Switching energy loss for the developed all-SiC module is far lower than for the Si module (Si IGBTs + Si fast recovery diodes) with the same 2000 V rated voltage class. Estimates of inverter power dissipation found that the developed SiC module achieves higher frequency operation twice that of a conventional Si IGBT, as well as a 37% lower loss for the two-level SiC inverter against the three-level Si inverter. The higher frequency operation enables downsizing and weight reduction of other system components, such as heat sinks and filters.
Original – Toshiba
