Toshiba Introduced Industry’s First 2200V Dual Silicon Carbide MOSFET Module

Toshiba Electronic Devices & Storage Corporation developed “MG250YD2YMS3,” the industry’s first 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment. The new module has a drain current (DC) rating of 250A and uses the company’s third generation SiC MOSFET chips. It is suitable for applications that use DC1500V, such as photovoltaic power systems and energy storage systems. Volume shipments start today.

Industrial applications like those mentioned above generally use DC1000V or lower power, and their power devices are mostly 1200V or 1700V products. However, anticipating widespread use of DC1500V in coming years, Toshiba has released the industry’s first 2200V product.

MG250YD2YMS3 offers low conduction loss with a low drain-source on-voltage (sense) of 0.7V (typ.). It also offers lower turn-on and turn-off switching loss of 14mJ (typ.) and 11mJ (typ.) respectively, an approximately 90% reduction against a typical silicon (Si) IGBT. These characteristics contribute to higher equipment efficiency. Realizing low switching loss also allows the conventional three-level circuit to be replaced with a two-level circuit with a lower module count, contributing to equipment miniaturization.

Toshiba will continue to meet the market needs for high efficiency and the downsizing of industrial equipment.

Applications

Industrial Equipment

• Renewable energy power generation systems (photovoltaic power systems, etc.)
• Energy storage systems
• Motor control equipment for industrial equipment
• High frequency DC-DC converter, etc.

Features

• Low drain-source on-voltage (sense):
  V_DS(on)sense=0.7V (typ.) (I_D=250A, V_GS=+20V, T_ch=25°C)
• Low turn-on switching loss:
  E_on=14mJ (typ.) (V_DD=1100V, I_D=250A, T_ch=150°C)
• Low turn-off switching loss:
  E_off=11mJ (typ.) (V_DD=1100V, I_D=250A, T_ch=150°C)
• Low stray inductance:
  L_sPN=12nH (typ.)

Original – Toshiba