• Infineon to Build World’s Largest 200-millimeter SiC Power Fab in Malaysia

    Infineon to Build World’s Largest 200-millimeter SiC Power Fab in Malaysia

    4 Min Read

    The decarbonization trend will result in strong market growth for power semiconductors, in particular those based on wide bandgap materials. As a leader in Power Systems, Infineon Technologies AG is now taking a further, decisive step to shape this market: By significantly expanding its Kulim fab – over and above the original investment announced in February 2022 – Infineon will build the world’s largest 200-millimeter SiC (silicon carbide) Power Fab. The planned expansion is backed by customer commitments covering about five billion euros of new design-wins in automotive and industrial applications as well as about one billion euros in pre-payments.

    Over the next five years Infineon will additionally invest up to five billion euros in Kulim during a second construction phase for Module Three. The investment will lead to an annual SiC revenue potential of about seven billion euros by the end of the decade, together with the planned 200-millimeter SiC conversion of Villach and Kulim. This highly competitive manufacturing base will support Infineon’s SiC market share target of 30% towards the end of the decade. Infineon is confident that the company’s SiC revenue in the fiscal year 2025 will come in ahead of the target of one billion euros.

    “The market for silicon carbide shows accelerating growth, not only in automotive but also in a broad range of industrial applications such as solar, energy storage and high-power EV charging. With the Kulim expansion, we will secure our leadership position in this market,” said Jochen Hanebeck, CEO of Infineon. “With the industry’s leading scale and a unique cost position, we are leveraging our competitive position of best-in-class SiC trench technology, the broadest package portfolio and unrivaled application understanding. These factors are the areas of differentiation and success in the industry.”

    Infineon has been awarded new design wins of about five billion euros along with about one billion euros in prepayments from existing and new customers: In the automotive sector this includes six OEMs, three of them from China. Among the customers are Ford, SAIC and Chery. In the area of renewable energies customers include SolarEdge and three leading Chinese photovoltaic and energy storage systems companies.

    In addition, Infineon and Schneider Electric agreed on a capacity reservation including prepayments for power products based on silicon and silicon carbide. Infineon and the respective customers will provide more details in separate announcements in the near future. The prepayments will contribute positively to Infineon’s cash flow in the coming years and shall be fully repaid in connection with the agreed sales volumes by 2030 at the latest.

    The Right Honourable Dato’ Seri Anwar bin Ibrahim, Prime Minister of Malaysia, expressed his appreciation for Infineon’s commitment to creating a significant wide bandgap hub in the country. “Malaysia is putting in maximum efforts to meet its national target to decarbonize its economy and achieve net zero by 2050. Malaysia’s continued appeal as a preferred investment destination comes with a well-established landscape for developing innovative and sustainable technologies. In this vein, Infineon’s vision on green technology and sustainability puts it right at home in Malaysia.

    Infineon and other well-established German corporations’ continued faith in Malaysia is a vote of confidence in Malaysia’s new economic growth agenda premised on inclusivity and sustainability, enabled by strong policies on knowledge transfer, quality investments, business enablement and socio-economic well-being based on equitable sharing of the nation’s wealth.”

    The Minister of Investment, Trade and Industry (MITI), His Hon. Tengku Datuk Seri Utama Zafrul Aziz lauded Infineon’s expansion and said, “Infineon’s expansion of their world-class silicon carbide facility in Kulim marks a significant milestone in Malaysia’s pursuit of developing advanced manufacturing capabilities, creating high-skilled employment opportunities and positioning the country at the forefront of enabling green technologies, which are crucial to achieving our global sustainable development goals.

    The innovative power semiconductor technologies manufactured in the SiC Power Fab will also bolster Malaysia’s position as a key player in the world’s semiconductor ecosystem, with a growing role specifically in the sustainable technology supply chain. I am heartened by Infineon’s sharing of Malaysia’s commitment to address the impact of climate change and I look forward to our long-term partnership for the further development of Malaysia’s green technologies ecosystem.”

    Sustainability is a key element in the planning, construction and operation of the fab. The building is designed in a way that allows Infineon to make responsible use of resources such as electricity and water.

    Original – Infineon Technologies

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  • Infineon Technologies Confirms Strong Performance

    Infineon Technologies Confirms Strong Performance

    2 Min Read

    Infineon Technologies AG reported the results for the third quarter of its 2023 fiscal year (period ended 30 June 2023).

    “The company has strongly performed in the past quarter, while Semiconductor market trends continue to present a mixed picture with both light and shade,” says Jochen Hanebeck, CEO of Infineon. “On the one hand, in electromobility, renewable energy and related application areas, demand has stayed high. On the other hand, demand for consumer applications, such as PCs and smartphones remains low. Infineon is performing well in this challenging market environment thanks to its persistent focus on structural growth drivers for the digital transformation and the transition to a green economy. This is why we take a forward-looking long-term approach and are investing in additional manufacturing capacity.”

    For the full version of financial data, please download the PDF version.

    • Q3 FY 2023: Revenue €4.089 billion, Segment Result €1.067 billion, Segment Result Margin 26.1 percent
    • Outlook for Q4 FY 2023: Based on an assumed exchange rate of US$1.10 to the euro, revenue of around €4 billion with a Segment Result Margin of around 25 percent expected
    • Outlook for FY 2023: Based on an assumed exchange rate of US$1.10 to the euro, Infineon continues to anticipate revenue to be at around €16.2 billion with an adjusted gross margin of about 47 percent and a Segment Result Margin of about 27 percent. Investments are expected to amount to approximately €3.0 billion. Taking the planned investments in frontend buildings into account, Free Cash Flow is now expected to be around €1.2 billion (previously €1.1 billion) and adjusted Free Cash Flow now around €1.7 billion (previously €1.8 billion)

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  • Leapers Semiconductor to Expand its SiC Power Modules Portfolio for ESS and Solar Markets

    Leapers Semiconductor to Expand its SiC Power Modules Portfolio for ESS and Solar Markets

    2 Min Read

    SiC power devices are changing and reshaping many industries today, providing numerous benefits over fundamental silicon-based semiconductors. One of the key advantages is a dramatically reduced power losses with increased efficiency achieved through silicon carbide exceptional material properties. SiC power semiconductors can operate at higher frequencies and temperatures delivering higher power densities and reduced cooling requirements. One of the industries benefiting much from the use of SiC power devices is the energy storage.

    Adopting silicon carbide technology, energy storage systems can deliver great energy saving and much better overall system performance.

    Reliability is one of the major requirements for any power electronics system, and ESS is no exception. That is why many ESS companies today choose SiC technology over Si. Silicon carbide power devices provide increased robustness and resistance when it comes to operating in extreme conditions. SiC temperature robustness allows to eliminate the risk of the system overheating – one of the major reasons for failure.

    Leading the development process of SiC power devices for a variety of emerging applications including vehicle electrification, photovoltaics, and, of course, battery energy storage systems, Leapers Semiconductor is expanding its portfolio of the hybrid modules with the 3-level power module to provide increased reliability for the ESS, solar, and the other 3-level applications.

    The all new DFH10AL12EZC1 power module integrates 1200V SiC MOSFET chips and 1200V IGBT chips in E2 package designed to correspond to high requirements set by the above-mentioned applications.

    Leapers Semiconductor DFH10AL12EZC1 hybrid power module features:

    • Blocking voltage:1200V
    • Rds(on): 9.5mΩ (VGS =15V)/8.3mΩ (VGS =18V)
    • Low Switching Losses
    • High current density
    • Press FIT Contact Technology
    • 175°C maximum junction temperature
    • Thermistor inside

    DFH10AL12EZC1 hybrid power modules guarantee the enhanced efficiency, improved power conversion, and increased overall reliability and durability with reduced system size.

    The other applications that will benefit from DFH10AL12EZC1 include:

    • Solar inverter Systems
    • Three-level Systems
    • Energy Storage Systems
    • High Frequency Switching Systems

    Original – Leapers Semiconductor

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  • WeEn Semiconductor's First Global Module Plant Commences Operations in Shanghai

    WeEn Semiconductor’s First Global Module Plant Commences Operations in Shanghai

    4 Min Read

    The opening ceremony of WeEnwin Jinshan Module Plant was held in the Shanghai Jinshan High-tech Industrial Development Zone. The ceremony marked the official commencement of WeEn’s world-first module plant, intended to produce various types of power module products utilized in consumer electronics, communications, new energy, and automotive applications. The products connect customers and the ecosystems, actively fostering the high-quality development of the industry.

    Markus Mosen, WeEn Semiconductors Co., Ltd. CEO; Chen Song, COO; Tang Ziming, CFO; Wu Rui, CHRO; Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd; Zhao Fei, deputy director of the Jinshan District Development and Reform Commission; Cao Qin, deputy director of the Jinshan District Investment Promotion Office; other relevant department heads of the New Jinshan Development Company; WeEn boards Zhang Xinyu, Chang Liang, and Zhu Fenglin; together with representatives from WeEn’s global partners, numerous customers, vendors, approximately 200 guests attended the event to personally witness this historic step in WeEn’s new journey.

    Located in the Shanghai Bay Area High-tech Industrial and Development Zone, WeEn Jinshan Module Plant covers an area of 11,000 square meters. The construction of the plant began in August 2022. Eight months later in April 2023, the building quality and fire inspection compliance tests were successfully completed.

    WeEn Semiconductors Co., Ltd. has invested approximately RMB 200 million in the wholly-owned new Jinshan Module Plant, which has introduced over a hundred of the industry’s most advanced power module production and testing equipment to meet the market’s mainstream demand for various types of module products.

    It is worth underscoring that the newly established WeEnwin Module Plant has simultaneously set up an advanced packaging R&D center to develop and mass produce cutting-edge packaging technologies while researching the applicability of new materials.

    To optimize efficiency and reliability, the fully automated module production line is equipped with top-notch processing capabilities, including lead-free chip bonding/silver sintering bonding, lead-free soldering/ultrasonic soldering of terminals, aluminum wire bonding, and copper tab connections. Currently, WeEnwin module plant. has obtained ISO9001 and IATF16949 certifications and undergone VDA6.3 process audits, evidence of the company’s robust system that guarantees top-quality products.

    Peng Xijun, general manager of Shanghai New Jinshan Industrial Investment & Development Co., Ltd, warmly congratulated WeEnwin for the opening, noting that the event was a testimony of the concerted efforts of all parties. He further stated that the collective endeavors have significant importance in elevating the power semiconductor industry’s development level and accelerating the concentration of the optoelectronic chip industry in the high-tech industrial and development zone.

    In addition, he expressed his wish for the high-tech zone, as it embarks on its new era journey, to continue harnessing resources and efforts and attracting policies aimed at strengthening the innovation chain, extending the industrial chain, and improving the ecosystem.

    Meanwhile, Markus Mosen, WeEn Semiconductors Co., Ltd. CEO stated, “Given the favorable winds, this is the perfect time to set sail.” WeEn’s investment in the world’s first module factory has successfully transitioned from planning to operation according to schedule. Therefore, we remain grateful for the strong support from the Jinshan District People’s Government, Shanghai Bay Area High-tech Industrial Development Zone, and FITA Tech.

    There is no doubt that without the collective efforts of our partners and team, this accomplishment would not have been possible. At WeEnwin, we will seize the opportunities of the era, leverage our product and technological strengths, and provide reliable and efficient power semiconductor devices to our customers and partners. As we inject new impetus into pragmatic cooperation, we remain confident in our ability to propel the ship of power device development toward a new journey.”

    The operation of the WeEnwin Jinshan Module plant will enhance the efficiency of WeEn Semiconductors Co., Ltd.’s entire industry chain layout and services. In addition to producing the most advanced SCR / FRD / IGBT / SIC modules, the factory will significantly improve the experience of customers and partners by offering innovative modules and packaging services for the automotive and renewable energy markets. It is projected that the first batch of products from the new Jinshan Module Factory for Chinese and overseas customers will be shipped in the fourth quarter of 2023.

    Original – WeEn Semiconductors

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  • GaN Systems and ACEpower Partner to Propel GaN Adoption in Chinese EV Market

    GaN Systems and ACEpower Partner to Propel GaN Adoption in Chinese EV Market

    3 Min Read

    GaN Systems has partnered with ACEpower to expedite the widespread adoption of GaN technology in electric vehicles. By harnessing GaN Systems’ cutting-edge power semiconductors, extensive expertise in EV power electronics, and ACEpower’s exceptional track record in high-power system design and high-volume manufacturing capabilities, this partnership will accelerate the GaN-based electric vehicle power market in China.

    GaN power semiconductors play a pivotal role in realizing the compact size, lightweight, and high efficiency demanded by the next generation of high-performance electric vehicles. By harnessing GaN Systems’ automotive-grade, high-performance GaN power transistors alongside ACEpower’s deep expertise in the power electronics industry, the companies are combining their distinctive capabilities to unlock the full potential of GaN performance advantages.

    In addition to other areas, the partnership will focus on topology optimization and advanced integrated power modules, and high-frequency magnetics design to enhance crucial electric vehicle efficiency and power density significantly.

    “We are delighted to announce our partnership with GaN Systems to accelerate GaN adoption in electric vehicles,” said Albert Wang, CEO of ACEpower. “Our longstanding relationship with GaN Systems, coupled with their unrivaled expertise in high reliability, automotive-qualified GaN semiconductors—a vital component for electric vehicles—brings great business opportunities in the fast growth Chinese EV market. Together, we are committed to driving innovation that will revolutionize electric vehicles, particularly in efficiency and power density, delivering substantial benefits to the industry.”

    This combination tackles fundamental challenges related to traditionally larger, heavier, inefficient, and costlier power systems based on legacy silicon power transistors. GaN power transistors enable higher efficiency and power density at a faster switching speed for onboard chargers, DC/DC converters, and traction inverters. These advancements translate into faster charging, extended driving range, and reduced overall system costs.

    “Today’s announcement marks a significant leap in our cooperative efforts with ACEpower to drive GaN adoption in the Chinese electric vehicle market,” said Jim Witham, CEO of GaN Systems. “This collaboration paves the way for disruptive and game-changing advancements in next-generation electric vehicles. Building upon our strong industry relationships with key players such as BMW, Toyota, and Vitesco, GaN Systems and ACEpower are poised to make a substantial impact in accelerating GaN adoption across the electric vehicle platform.”

    GaN Systems and ACEpower’s shared vision extends to capturing substantial market value in emerging sectors such as data centers and electric vehicles. Future initiatives encompass the joint development of high-power density GaN-powered OBCs rated at 6.6kW and 11kW for electric vehicles, solidifying their commitment to driving innovation and advancing the power industry.

    Original – GaN Systems

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  • Bernd Hops is Leaving Infineon

    Bernd Hops is Leaving Infineon

    2 Min Read

    Bernd Hops, Chief Communications Officer and Head of Communications & Public Policy at Infineon Technologies AG, will leave the company at the end of September at his own request and by best mutual agreement. The succession process has been initiated.

    “Bernd Hops has played a key role in shaping Infineon’s communications and political work over the past more than ten years. We accept his decision with great regret,” said Jochen Hanebeck, CEO of Infineon.

    “Thanks also to Bernd Hops’ intensive work, awareness among our key stakeholders and the general public of the important contribution Infineon is making to the decarbonization and digitalization of our world has grown significantly in recent years. Under his leadership, the Communications and Public Policy team has also been significantly expanded. On a personal note, I would like to express my sincere thanks to Bernd Hops for his outstanding support, especially during the transition period last year when I took over the role as CEO of Infineon.”

    “The decision to leave Infineon after more than ten years was not an easy one for me. I am grateful for having been able to help appropriately position this great company with its dedicated people. Now I would like to pursue a new challenge. I would like to thank Jochen Hanebeck and his predecessor Reinhard Ploss very much for the great trust they have placed in me, which is a prerequisite for good corporate communication. I would also like to thank my team and the many other colleagues who accompanied me at Infineon and strongly supported me.”

    Bernd Hops joined Infineon in 2013 as Head of CEO Communications and subsequently took on various additional leadership roles in Communications & Public Policy. In January 2020, he assumed global responsibility for the department. Previously, Bernd Hops worked as a business editor and reporter at “Der Tagesspiegel” and “Financial Times Deutschland” and as a communications manager at the management consultancy Roland Berger and the utilities company Verbundnetz Gas.

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  • Bosch Opens Semiconductor Test Center in Malaysia

    Bosch Opens Semiconductor Test Center in Malaysia

    3 Min Read

    Global demand for chips for the automotive and consumer goods industries remains high. That is why Bosch is continuing to expand its semiconductor business. The company has now opened a new test center for chips and sensors in Penang, Malaysia, at a cost of some 65 million euros; it plans to invest a further 285 million euros at the site by the middle of the next decade.

    “With our new semiconductor test center in Penang, we are creating additional capacity within our worldwide manufacturing network to meet the continued high demand for chips and sensors,” said Dr. Stefan Hartung, chairman of the Bosch board of management. “Semiconductors are a decisive success factor for all Bosch business areas, and the expansion of this business is strategically very important.”

    In total, Bosch has some 100,000 square meters of land available on Penang’s mainland strip. The new test center currently covers more than 18,000 square meters and includes clean rooms, office space, and laboratories for quality assurance and manufacturing. By the middle of the next decade, up to 400 associates will be working there. With the new factory and a total of 4,200 associates, Penang is now Bosch’s biggest location in Southeast Asia.

    Semiconductor manufacturing can basically be divided into two sections: frontend manufacturing and backend manufacturing. For the latter, Malaysia is an important hub in the global semiconductor supply chain. The country is estimated to cover around 13 percent of global backend manufacturing. According to official figures, in recent years the state of Penang has generated more than 5 percent of worldwide semiconductor revenue.

    “The new test center in Penang brings our manufacturing network closer to the companies that serve the further value chain of semiconductor manufacturing as well as to customers in this important Asian market. That shortens delivery times and routes, and it improves our competitiveness,” says Dr. Markus Heyn, member of the Bosch board of management and chairman of the Mobility business sector.

    The frontend is where the actual circuits are attached and patterned on the wafers; at Bosch, for example, this work is currently performed in the clean rooms of the wafer fabs in Reutlingen and Dresden. The backend is where the individual chips are then separated from the wafers, assembled, and tested. Bosch currently carries out most of the final testing of its semiconductors in Reutlingen, Germany; Suzhou, China; and Hatvan, Hungary.

    Those locations will now be joined by the new test center in Penang, Malaysia. The fully connected plant is one of the most advanced semiconductor test centers in Southeast Asia. Here, Bosch will immediately begin testing semiconductors that the company manufactures at its frontend in Dresden, among other locations. “Our new test center in Penang completes our internal process chain, especially for semiconductors from Dresden,” Heyn says.

    Bosch is pursuing a global growth strategy with its semiconductor business. Over the next three years, the company plans to invest some three billion euros in Dresden and Reutlingen, both as part of its own investment plan and under the auspices of the European IPCEI ME/CT (“Important Project of Common European Interest on Microelectronics and Communication Technologies”) funding program.

    Following its expected acquisition of part of the business of TSI Semiconductors, based in Roseville, California, which is expected before the end of the year, Bosch plans to invest roughly an additional 1.4 billion euros in retooling the fab to support the latest manufacturing processes for silicon carbide semiconductors.

    Original – Bosch

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