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Toshiba Electronic Devices & Storage Corporation has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are “XPHR9904PS, XPH2R404PS and XPH3R304PS.”
The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083, and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085.
The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available.
The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.
Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.
Applications
- Automotive equipment: motor drives, switching power supplies, load switches, etc.
Features
- Low On-resistance
XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V) - AEC-Q101 qualified
- PPAP of IATF16949 available
Original – Toshiba
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Power semiconductors based on silicon carbide (SiC) offer several advantages, like high efficiency, power density, voltage resistance, and reliability. This creates opportunities for new applications and improved charging station technology innovations. Infineon Technologies announced a collaboration with Infypower, a Chinese market leader in new energy vehicle charging. Infineon will provide INFY with the industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.
“The collaboration between Infineon and Infypower in the field of charging solutions for electric vehicles (EV) provides an excellent system-level technology solution for the local EV charging station industry,” said Dr. Peter Wawer, Division President of Infineon’s Green Industrial Power Division. “It will significantly improve charging efficiency, accelerate charging speed, and create a better user experience for owners of electric cars.”
“With Infineon’s more than 20 years of continuous advancement in SiC product offering and the strength of integrated technology, Infypower can consolidate and maintain its technological outstanding position in the industry by adopting state-of-the-art product processes and design solutions“, said Qiu Tianquan, President of Infypower China. “We can also set a new standard for charging efficiency of DC chargers for new energy vehicles. As a result, customers can enjoy more convenience and unique value, promoting the healthy development of the EV charging industry.”
SiC’s high power density enables the development of high-performance, lightweight, and compact chargers, especially for supercharging stations and ultra-compact wall-mounted DC charging stations. Compared to traditional silicon-based solutions, SiC technology in EV charging stations can increase efficiency by 1 percent, reducing energy losses and operating costs. In a 100 kW charging station, this translates to 1 kWh of electricity savings, saving 270 Euros annually and reducing carbon emissions by 3.5 tons. This drives the increasing adoption of SiC power devices in EV charging modules.
As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced an advanced design that provides high reliability for chargers. The devices offer a high threshold voltage and simplified gate driving . The CoolSiC MOSFET technology has been subjected to marathon stress tests and gate voltage jump stress tests before commercial release and regularly afterwards in form of monitoring to ensure highest gate reliability.
By integrating Infineon’s 1200 V CoolSiC MOSFETs, Infypower’s 30 kW DC charging module offers a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. In this way, it is well suited for the fast charging demand of most EVs while possessing a higher efficiency of 1 percent compared with other solutions on the market. Consequently, significant energy savings and carbon dioxide emission reduction are achieved, which are leading at a global level.
Original – Infineon Technologies
