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DISCO Corporation has made a decision to build a new building at the Haneda R&D Center (Higashi Kojiya, Ota-ku). Construction will begin in April 2025 and is scheduled for completion at the end of March 2027. With the construction of the new building, DISCO aims to further enhance its R&D functions, enabling it to respond to the future needs of the semiconductor and electronic component markets.
The existing buildings, which were acquired in March 2022, were originally designed and built by a previous owner for training flight crews and as a data center. As these buildings have a relatively large amount of floor space with high load-bearing capacity, they were put into use as a development site upon the fitting of utilities such as water supply, drainage, and compressed air.
However, with the recent increase in development, DISCO has decided to construct a new building with an increased amount of floor space suitable for development. This new building will be constructed such that it can be expanded if more floor space for development becomes necessary.
Two of the seven existing buildings will be demolished to make room for the new building. The five remaining buildings will continue to be used with the purpose of R&D, as well as enhancing DISCO’s production system during periods of high demand.
Original – DISCO
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LATEST NEWS2 Min Read
The Infineon Technologies AG Supervisory Board has appointed Elke Reichart to the Management Board effective November 1, 2023. As Chief Digital Transformation Officer (CDTO), she succeeds Constanze Hufenbecher, who has decided not to renew her expiring contract. As CDTO, Elke Reichart will among other things be responsible for group-wide digitalization projects, IT infrastructure and Infineon’s sustainability strategy.
“Fully leveraging the opportunities of the digital transformation is a key leadership task. I am therefore delighted to have Elke Reichart, an internationally experienced and high-profile technology manager, join the Infineon Management Board. She has proven in her career that she can further develop international organizations and successfully implement digitization projects,” said Herbert Diess, Chairman of Infineon’s Supervisory Board. “On behalf of the entire Supervisory Board, I would like to express my sincere thanks to Constanze Hufenbecher for her outstanding work. She has successfully built up the CDTO department and together we decided that November 1 was a suitable time to hand over the baton.”
“Green and digital transformation go hand in hand – and Infineon is driving both. In this context, digitalization is also a crucial lever for our own company. I am very much looking forward to working with Elke Reichart. She will bring new perspectives and impetus to the Management Board and use her extensive experience to help lead Infineon into an even more successful future,” said Jochen Hanebeck, CEO of Infineon.
“I would like to sincerely thank Constanze Hufenbecher for the good collaboration. With the Digital Agenda and the Sustainability Strategy, she has laid important foundations and shaped a culture of cross-departmental collaboration.”
“Digitalization is an integral part of Infineon’s strategy. A differentiating service and product portfolio, better interaction with customers, faster and more efficient processes: digital solutions support Infineon’s strategy in many ways. I look forward to soon being part of this great company and I thank the Supervisory Board for their trust,” says Elke Reichart.
Elke Reichart was Chief Digital Officer of TUI Group from 2018 to 2021, where she was responsible for the Group’s digitalization strategy, among other things. Prior to that, she held various management positions at Hewlett Packard over a period of 25 years, including Vice President Strategy & Planning at HP’s headquarters in Palo Alto (California). During her time at HP, Elke Reichart was responsible for various transformation programs, each with a volume of several billion US dollars.
Original – Infineon Technologies
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The automotive industry is evolving at a rapid pace, with E-Mobility and Advanced Driver Assistance Systems (ADAS) driving the market’s need for innovative solutions. Microchip Technology announced the expansion of its Detroit Automotive Technology Center in Novi, Michigan. The 24,000-square-foot facility is the destination for automotive clients to explore new technologies and to meet with technical experts to get support for their end applications and designs.
Microchip has been part of the Detroit community since 1999, when it first opened its doors as an application and sales office. With the recent completion of phase three of its expansion project, Microchip has more than doubled its lab space, including the addition of new labs that focus on high-voltage and E-Mobility applications. This larger facility will also bring more technology-related jobs to the region.
“Microchip’s automotive business is a cornerstone of our company’s legacy. We remain focused on developing total system solutions, and this expansion provides our customers with immediate access to state-of-the-art resources,” said Rich Simoncic, executive vice president of Microchip. “In addition to the Detroit location, we have Automotive Technology Centers in Munich, Shanghai, Tokyo and Austin, Texas, to support our global customer base.”
“Microchip’s Automotive Technology Center demonstrates our commitment to the automotive industry by providing a destination for them to develop, test and refine applications in the design phase,” said Matthias Kaestner, corporate vice president of Microchip’s automotive business. “Our vision for the center is to provide our automotive customers with the confidence to choose the right solutions for their designs by helping them to cut design effort and time to market by providing world class technical support locally.”
Located in the heart of the automotive industry, and with top tier OEMs, suppliers and startups operating in the region, Novi is a key location for Microchip’s Detroit Automotive Technology Center and easily accessible to help OEMs with their design challenges.
The key capabilities of the Detroit Automotive Technology Center include:
- Dedicated high-voltage lab for demonstrations of reference designs featuring Microchip’s silicon carbide mSiC™ solutions, dsPIC® Digital Signal Controllers (DSCs) and our wide breadth of analog and mixed-signal solutions
- Support for central compute and zonal networks in ADAS platforms using Microchip’s PCIe® Gen 4 and Gen 5 switching hardware, single-pair Ethernet devices and development tools
- Human Machine Interface (HMI) lab to support the development of full-width cockpit displays; touchscreens; Knob-on-Display™ (KoD™) solutions; and buttons, sliders, and wheels with EMC testing
- USB and networking development resources for pre-certification of multimedia infotainment systems and media hubs for advanced USB Type-C® 3.2 protocol applications
- Die- and product-level characterization of automotive MEMS resonators and oscillators, including vacuum and wafer-scale probe and test, long-term aging, frequency stability, phase noise and jitter test capability
- Development of automotive security solutions using Microchip’s CryptoAutomotive™ TrustAnchor ICs, and onsite security training to learn how to implement secure elements in applications such as secure boot, message and hardware authentication and more
“The new high-voltage lab will help our automotive customers develop systems using our reference design platforms and analog, digital control and power solutions,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “As more OEMs transition to our E-Mobility offerings, we are ready to support them from the design phase to implementation.”
As a leading supplier of embedded solutions to global automotive OEMs, Microchip offers many automotive products that are qualified in accordance with AEC-Q100 requirements. Its automotive-qualified product portfolio includes microcontrollers, DSCs, USB and networking solutions, analog and interface products, SiC MOSFETs, serial EEPROMs and more.
Microchip also offers a broad portfolio of ISO 26262 functional safety ready and functional safety compliant devices that offer the latest hardware safety features and are supported by a comprehensive safety ecosystem to simplify the design and certification of safety-critical automotive applications.
Original – Microchip Technology
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Power Integrations™ is providing advanced PowiGaN™ gallium-nitride (GaN) technology, expert design support, and financial sponsorship for Team aCentauri in the 3,000 km Bridgestone World Solar Challenge later this month. Power Integrations’ Mr. Green will follow Team aCentauri and the 37 other entrants across the Australian Outback as they push the boundaries of innovation in efficiency, aerodynamics, speed and range for solar-powered cars.
“After studying Power Integrations’ extensive list of reference designs, Team aCentauri asked us to help them design a power converter based on the 750-volt, InnoSwitch™3-EP with PowiGaN technology,” said Trevor Hiatt, director of marketing at Power Integrations. “With our IC and expert design support, the team not only boosted energy efficiency to 95.7 percent while the system operates at maximum power, but also improved efficiency by more than 50 percent while the system drives light loads – which is most of the time.”
The Bridgestone World Solar Challenge begins in Darwin on October 22 and is expected to conclude in Adelaide on October 29.
Original – Power Integrations
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GaN / LATEST NEWS / PROJECTS / WBG3 Min Read
GlobalFoundries has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures.
These chips are positioned to enable game-changing performance and efficiency in 5G and 6G cellular communications for infrastructure and handsets, automotive and industrial Internet of things (IoT), as well as power grids and other critical infrastructure.
With the new $35 million in funding, awarded by the Department of Defense’s Trusted Access Program Office (TAPO), GF plans to purchase additional tools to expand development and prototyping capabilities, moving closer to at-scale 200mm GaN-on-silicon semiconductor manufacturing.
As part of the investment, GF plans to implement new capabilities for reducing the exposure of GF and its customers to supply chain constraints of gallium, while improving the speed of development, assurance of supply and competitiveness of U.S-made GaN chips.
The funding builds on years of collaboration with the U.S. government – including $40 million in support from 2020-2022 – that leverages the talent of GF’s Vermont team and their 200mm semiconductor manufacturing experience, and applies it to GaN-on-silicon manufacturing. 200mm is state-of-the-art for GaN chip technology.
“Vermont is a leader in semiconductor innovation. This federal funding is welcome news, and will solidify our state’s position as a leader at the forefront of manufacturing next-generation chips,” said Senator Peter Welch. “It’s critical we support investment in this industry here in Vermont and in the U.S. – both for our local economic growth and for our national security. I look forward to continuing to fight for our domestic semiconductor and chip manufacturers in the Senate.”
“This strategic investment continues to strengthen our domestic ecosystem of critical dual-use commercial technologies, ensuring they’re readily available and secure for DoD utilization. In concert with key partners, we’re proactively shaping the future of our defense systems,” said The Honorable Christopher J. Lowman, Assistant Secretary of Defense for Sustainment.
“GaN on silicon is an ideal technology for high performance radio frequency, high voltage power switching and control applications for emerging markets, and it’s important for 6G wireless communications, industrial IoT, and electric vehicles,” said Dr. Thomas Caulfield, president and CEO of GF.
“GF has a longstanding partnership with the U.S. government, and this funding is critical to move GaN on silicon chips closer to volume production. These chips will enable our customers to realize bold new designs that push the envelope of energy efficiency and performance of critical technologies we rely on every day.”
GF’s facility in Essex Junction, Vermont, near Burlington, was among the first major semiconductor manufacturing sites in the United States. Today around 1,800 GF employees work at the site. Built on GF’s differentiated technologies, these GF-made chips are used in smartphones, automobiles, and communications infrastructure applications around the world.
The facility is a DMEA accredited Trusted Foundry and manufactures secure chips in partnership with the U.S. Department of Defense, for use in some of the nation’s most sensitive aerospace and defense systems.
Original – GlobalFoundries
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LATEST NEWS / SiC / WBG1 Min Read
Axcelis Technologies, Inc. announced the shipment of the Company’s Purion EXE SiC Power Series™ 200mm high energy implanter to a leading SiC power device chipmaker located in Japan. The system will be used in high volume production of SiC power devices for use in automotive applications.
Executive Vice President of Marketing and Applications, Greg Redinbo, commented, “The power device market is one of the fastest growing segments in IC manufacturing, due in part to the robust growth in the electric vehicles market. The power device market is at a critical inflection point as chipmakers transition from 150mm to 200mm SiC wafers.
The Purion Power Series family is uniquely suited to excel at these applications due to its innovative platform that offers the flexibility to handle multiple wafer sizes, various substrate types and operate at various implant temperatures. We look forward to continuing to expand the Purion platform footprint in Japan and supporting our customers’ goals to increase their manufacturing capacity.”
Original – Axcelis Technologies
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LATEST NEWS / PRODUCT & TECHNOLOGY / Si1 Min Read
Micro Commercial Components introduced the latest auto-grade MOSFET in the TOLL package for today’s demanding e-mobility applications. AEC-Q101 qualified and ready to empower auto designs, MCC’s100V MCTL300N10YHE3 MOSFET delivers exceptional performance and unmatched reliability for a range of systems, including battery management systems, motor drives, and interior or exterior LED lighting.
Designed with split-gate trench (SGT) technology, this component features low on-resistance and high current density to maximize efficiency while handling power loads. It’s also a great replacement for traditional MOSFETs due to its enhanced performance. The innovative TOLL-8 package provides design flexibility due to its compact footprint and optimal heat dissipation to ensure safe operation in high-temperature environments.
Fully RoHS compliant, MCTL300N10YHE3 is the ideal solution for automotive applications.
Features & Benefits:
- Exceptional performance and reliability
- AEC-Q101 qualified
- SGT technology for improved performance
- Low on-resistance for enhanced efficiency
- High current density capabilities
- Low-profile TOLL package saves design space
- Excellent heat dissipation for reliable operation in high temperatures
- Halogen-free and lead-free finish for environmental friendliness and compliance with RoHS regulations
Original – Micro Commercial Components