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Power semiconductors are electronic components which are key enablers to tackling major challenges of decarbonization and digitization on the path to an energy-wise society.
This IEC White Paper establishes the critical role that power semiconductors play in various aspects of modern industry and in society – from renewable power generation and transmission, electromobility, automated factories, energy-efficient data centres to smart cities and smart homes. It covers the various expected trends, opportunities and challenges surrounding the power semiconductors industry. Significant challenges are mentioned such as the need for change in industry practices when transitioning from linear to circular economies, and shortage of skilled personnel required for power semiconductor development.
The white paper stresses the need for strategic actions at the policy-making level to address these concerns and calls for stronger government commitment, policies, and funding to advance power semiconductor technologies and integration. It demands recognition of the crucial role played by power semiconductors in global decarbonization efforts.
It further highlights the pivotal role of standards in removing significant technical risks, increasing product quality and enabling faster market acceptance. According to the authors, IEC can play a leading role in promoting collaboration among stakeholders, aligning methodologies, and ensuring that international and national standardization bodies work closely with industry. Additionally, the white paper delivers recommendations to IEC stakeholders for collaborative structures and accelerating the development and adoption of standards.
In a first for the IEC Market Strategy Board’s White Paper series, the authors aim to inspire the engagement of young professionals in the area.
This white paper has been prepared by a project team representing a variety of organizations, working under the IEC Market Strategy Board (MSB). The project team included representatives from semiconductor network businesses, academia, equipment vendors from around the world, and IEC Young Professionals. Dr Kazuhiko Tsutsumi, Mitsubishi Electric Corporation and MSB Chair, served as the project sponsor. Dr Munaf Rahimo and Dr Iulian Nistor of MTAL GmbH served as coordinating authors and project partner.
Original – IEC
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With support from the Innovation, Technology and Industry Bureau and the Office for Attracting Strategic Enterprises (OASES), the Hong Kong Science and Technology Parks Corporation (HKSTP) has signed a Memorandum of Understanding (MoU) with mainland China-based microelectronics enterprise J2 Semiconductor (Shanghai) Co. Ltd. (J2 Semiconductor), to set up a global research and development (R&D) Centre focusing on third-generation semiconductors at the Hong Kong Science Park, and to set up Hong Kong’s first Silicon Carbide (SiC) 8-inch advanced wafer fab.
This is a milestone moment in the government’s ambition to establish Hong Kong as a leading microelectronics hub in the region. This further promotes new industrialisation, a core for the Innovation, Technology and Industry Bureau which published its “Hong Kong Innovation and Technology Development Blueprint”, with a mission to develop strategically advanced manufacturing industries, such as microelectronics and semiconductors. As one of the world’s largest import and export markets for semiconductors, Hong Kong is at the heart of the Greater Bay Area which offers huge potential in becoming a key hub in the global semiconductor supply and value chain.
Professor Sun Dong, Secretary for Innovation, Technology and Industry, said “This collaboration between HKSTP and J2 Semiconductor to set up the Hong Kong’s first-ever large-scale semiconductor wafer fab, demonstrates the commitment of the HKSAR Government in taking the initiative to turn its ‘new industrialisation’ vision into action. J2 Semiconductor is proactively building up the capacity, quality and competitiveness of Hong Kong’s tech talent pool. The project will also drive the development of related industries, including semiconductor equipment manufacturers, material suppliers, testing service providers, to develop a complete ecosystem to reinforce Hong Kong’s position in the global semiconductor industry value chain.”
The collaboration between HKSTP and J2 Semiconductor is jointly supported by the Innovation, Technology and Industry Bureau and OASES with a view to sustain Hong Kong’s innovation and technology ecosystem and promote new industrialisation. The MoU was witnessed by Professor Sun Dong, Secretary of Innovation, Technology and Industry Bureau, Mr Philip Yung, Director-General of OASES, Ms Lillian Cheong, Under Secretary for Innovation, Technology and Industry, Dr Sunny Chai, Chairman of HKSTP and Dr Robert Tsu, Chairman of J2 Semiconductor. While Mr Albert Wong, CEO of HKSTP and Mr TY Chu, Co-CEO of J2 Semiconductor formally signed the MoU.
Dr Sunny Chai, Chairman of HKSTP said, “The plan of establishing J2 Semiconductor’s R&D Centre in the Science Park will promote Hong Kong’s R&D and advanced manufacturing capabilities of third-generation semiconductor devices. J2 Semiconductor brings the core technology and expertise to Hong Kong in advanced chip design, fabrication process and semiconductor product development, which is an important milestone in the development of microelectronics industry in Hong Kong. As one of Hong Kong’s flagship innovation and technology platforms, we provide high-quality infrastructure and facilities as well as a vast network of partners, which will continue to promote Hong Kong’s microelectronics R&D capabilities and strengthen Hong Kong’s position as an international I&T hub.”
Dr Robert Tsu, Chairman of J2 Semiconductor said, “I am very grateful for the level of attention and support from both the Innovation, Technology and Industry Bureau and HKSTP to this project. The MoU signing officially launches our third-generation semiconductor ‘SiC 8-inch advanced wafer fab’ project. J2 Semiconductor will invest an estimated HK$6.9 billion into the project, with plans to start volume production in the next couple of years, and reach annual production capacity of 240,000 SiC wafers in 2028, generating an annual production value of more than HK$11 billion and creating more than 700 job positions in Hong Kong. The project will assist in the early completion of the localisation of the new energy vehicle supply chain and drive the long-term development and prosperity of the semiconductor industry in Hong Kong.”
As a semiconductor chip design enterprise, J2 Semiconductor is committed to meeting the strong demand for domestically produced automotive chips from the China automotive industry. It mainly provides high-performance silicon carbide (SiC) devices with a focus on automotive, power conversion and communications. J2 Semiconductor’s superior SiC technology can be applied to relevant applications such as electric vehicles, as well as the related infrastructure such as charging stations, smart grids and energy storage.
HKSTP is committed to promoting Hong Kong’s new industrialisation mission and building a world-leading microelectronics ecosystem. HKSTP has established an extensive network of microelectronics hardware infrastructure, including Sensor Packaging and Integration Laboratory (Sensor Lab), Heterogenous Integration Lab (HI Lab) and the Hardware Lab, which can support the end-to-end process of design, prototyping and pilot production of chip-related equipment and systems as well as products. The Microelectronics Centre in Yuen Long Innovation Park is set to begin operation in 2024, supporting HKSTP’s infrastructure to accelerate microelectronics R&D pilot production, creating opportunities for upstream and downstream enterprises in the industry chain.
The microelectronics ecosystem of HKSTP is flourishing, with more than 200 microelectronics related companies. The establishment of the J2 Semiconductor facilities in Hong Kong will create greater level of synergy and knowledge exchange. Currently, five universities in Hong Kong are ranked among the top 100 universities in the world, with more than 100 university researchers engaged in microelectronics research, and promote the R&D of third-generation semiconductors. In this year’s Budget Speech, the HKSAR Government announced its plan to establish a Microelectronics Research and Development Institute to strengthen collaboration with universities, R&D centres and companies in the industry, and further accelerate the “1 to N” translation of R&D outcomes and bolster industry development.
Original – HKSTP
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ROHM-Wako Electronics (Malaysia) Sdn. Bhd. (RWEM) in Malaysia held an opening ceremony for its newly building constructed to strengthen its analog IC production capacity and manufacturing subsidiary.
RWEM produces small-signal devices such as diodes and LEDs, and the new building will be used to produce isolated gate driver ICs, one of the focus products in analog ICs. Isolated gate driver ICs are ICs that optimally drive power semiconductors such as IGBTs and SiCs, and since they play an important role in energy saving and miniaturization of electric vehicles and industrial equipment, demand for these products is expected to grow.
RWEM will begin production of ICs for the first time in order to strengthen its production capacity and promote multi-location of analog IC production factories from the viewpoint of BCM (Business Continuity Management).
The new building will be equipped with a variety of energy-saving technologies to reduce environmental impact (expected to reduce CO2 emissions by about 15% compared to the current facilities). RWEM’s BCM system will be further strengthened by introducing various state-of-the-art disaster preventions. RWEM intends to bring in production machines and begin production in October, 2024. As a result, RWEM’s overall production capacity is expected to increase by approximately 1.5 times.
ROHM Group will continue to strengthen its production capacity in accordance with its Medium-Term Management Plan while keeping abreast of market conditions, and will also thoroughly enhance its BCM system to ensure a stable supply of products to customers.
Original – ROHM
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EPC Space announces the Grand Opening of their new facility in Andover, Massachusetts. Guests are invited to join the EPC Space team for a day of activities that will explore the possibilities that GaN presents to significantly outperform silicon-based devices and enable higher power densities, higher efficiencies, and more compact and lightweight circuitry for critical spaceborne missions.
Radiation hardened (rad hard) GaN improves the performance of power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, lidar for autonomous navigation and docking, and deep space probes.
Event Highlights
- Start the day with a warm welcome and enjoy a welcome reception. Guests will receive drink tickets for the upcoming Cocktail Reception and an automatic entry into an exciting raffle.
- Get a glimpse into EPC Space’s remarkable journey and accomplishments as CEO, Bel Lazar, officially opens the event.
- Witness the ceremonial opening of our new facility.
- Explore our facility with guided tours. Immerse yourself in a product showcase and demonstrations, featuring a dedicated Applications table hosted by EPC Space engineers. They will be available to answer questions and demonstrate real-world applications such as DC-DC, POL, and motor control.
- Book Signing by Dr. Alex Lidow (2:30 PM – 3:30 PM): Take this opportunity to meet with Dr. Alex Lidow, CEO of EPC, and author of “GaN Power Devices and Applications,” who will be available to sign copies.
- Connect with EPC Space experts for personalized discussions and insights into rad hard GaN technology.
- Enter for a chance to win exciting prizes during the raffle.
- Network with fellow attendees and the EPC Space team during the Cocktail Reception.
To attend send an RSVP by October 18, 2023 to info@epc.space
“EPC Space is proud to be at the forefront of providing radiation hardened GaN solutions for power conversion to the aerospace industry and beyond,” said Bel Lazar, CEO of EPC Space. “We are happy to invite our customers and partners to be a part of this event and see first-hand how our technology is shaping the future of high reliability applications”.
Original – EPC Space
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Queensland Semiconductor Technology (Quest) announced opening of its new sales, marketing, assembly and test facility in Coolum Beach. Based very close to the Sunshine Coast airport Quest is now able to ship its power semiconductors to the Australia domestic market. With the airport located within 5 minutes international shipping is swift.
Queensland Semiconductor Technology Pty Ltd stands as a beacon in the semiconductor industry, having established its foundation in Queensland. Quest offers high voltage switching SiC SBD technology that is paramount for transformative applications like electric vehicles, wind farms, and solar power generation. Additionally, product portfolio expands to SiC Mosfets, IGBTs, TCIGBTs & super junction Gan technology plus.
Original – Queensland Semiconductor Technology
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ECAD (Electronic Computer-Aided Design) model services play an indispensable role in modern engineering design. For engineers, this service provides a convenient tool that helps improve the design process and save valuable time. ECAD model services are widely used in various engineering fields, including electronics, telecommunications, healthcare, and automotive.
Engineers can use this service to design various types of electronic devices, from mobile phones to automotive control systems.
Downloading ECAD models from PANJIT‘s website is a straightforward process that enables engineers to access detailed product model images for our electronic components. In this tutorial, we will guide you through the step-by-step process to download ECAD models for the product you require.
Step 1: Go on to PANJIT’s website
Begin by accessing PANJIT’s official website at www.panjit.com
Step 2: Navigate to the Product Section and locate your desired product
Once you’re on PANJIT’s website, navigate to the product section. Browse or use the search feature to locate the specific product you are seeking.
Step 3: Access ECAD Model Files
On the product page, you’ll find the ECAD icons next to the product. Click on this icon to access the ECAD download section.
Step 3-1: Select Format and Specific Files
In the E-CAD download section, you will be able to select the format and specific files required for the product. Choose the format that is compatible with your CAD software, and select the specific files related to the product’s configuration or variants of interest. After making your selections, click on the “Download CAD Models” button. If the files you are seeking are not currently available, simply submit a request, and the files will be made available soon.
Step 3-2: Log In to Your Free Account
If you already have an account, log in using your credentials. If you do not have an account yet, you will need to create a free account to proceed. Look for the “Create a Free Account” option, and follow the registration process.
Now you can apply the ECAD models to your simulations!Original – PANJIT International
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Magnachip Semiconductor Corporation announced the launch of two new 150V MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8th-generation trench MOSFET technology.
Energy efficiency is crucial in high-power devices for reducing power consumption and ensuring stability. These newly released 8th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging Magnachip’s cutting-edge trench MOSFET technology. In particular, the RDS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.
By improving the core cell and termination design, the Figure of Merit (FOM: RDS(on) x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D2PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.
“Following the introduction of five 8th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”
Original – Magnachip Semiconductor
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With decades of expertise in power device packaging and testing, JCET Group offers a comprehensive power product portfolio encompassing IGBT, SiC, GaN, and more. In the field of high-density power solutions for automotive applications, JCET’s unique power module technology positions us at the forefront of power main drive solutions.
JCET’s innovative packaging technology for high power density Silicon Carbide (SiC) power modules minimizes parasitic effects and thermal resistance, while our groundbreaking interconnect technology ensures high reliability. Reduced power loss and improved performance, making JCET the preferred choice for high-reliability SiC device packaging for the automotive industry.
The rapid growth of the power semiconductor market in automotive applications is being driven by the acceleration of vehicle electrification. In this evolving landscape, a multitude of power devices find applications in crucial automotive systems such as motor control, DC-DC conversion, air conditioning drives, on-board chargers (OBC), and battery management for electrical vehicles.
According to research by Strategy Analytics, the value of power devices in battery electric vehicles (BEVs) is nearly five times that in traditional fuel vehicles. This is where SiC devices come into play, offering several advantages. SiC devices feature smaller conductor resistors per unit area, higher voltage capabilities, faster switching speeds, and the ability to operate at high temperatures. These characteristics are instrumental in enhancing the power density of the inverter, ultimately leading to improved operational efficiency and extended mileage for electric vehicles under real-world conditions.
JCET combines low stray inductance package technology, advanced interconnect packaging technology, and cutting-edge thermal management solutions, tailoring our packaging processes to meet individual customer requirements. Within this package, a suite of integrated solutions, including the whole-silver sintering process, copper wire bonding, and single-side direct water cooling, is employed.
Furthermore, SiC devices, with their smaller footprint, increased power density, and higher breakdown voltage compared to conventional silicon-based power devices, are at the core of our packaging. When integrated into an 800V platform, SiC devices deliver substantial system advantages, enabling rapid charging and extended mileage. JCET’s unwavering commitment to optimizing packaging technology is evident in our High-Performance Device (HPD) package, which is continuously fine-tuned to excel in SiC high-frequency switching applications.
With the growing adoption of SiC devices across diverse sectors like automotive controllers, charging stations, and photovoltaic energy storage, JCET has pioneered innovative designs encompassing packaging materials, internal connections, and packaging structures. JCET has introduced a range of packaging solutions tailored to meet various user requirements, including:
- 400V platform, A0/A00 vehicles within 70KW: Si Hybrid Package1 solution;
- 400V platform, Class A vehicles between 100-200KW: Si/SiC Hybrid Package Driver solution;
- 800V platform, Class B and luxury cars with 200KW and above: SiC single/double sided heat dissipation solution.
Automotive power devices, including SiC, hold vast market potential and exhibit a high level of technical innovation certainty. This presents a compelling opportunity for device designers and manufacturers. Looking ahead, JCET remains committed to its core mission of advancing power device packaging solutions, We are dedicated to expanding our technology offerings, ensuring our customers have a diverse array of options, helping them integrate more efficient and reliable technologies into the new energy vehicle systems.
Original – JCET
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Axcelis Technologies, Inc. announced a shipment of the Purion Dragon™ high current implanter to a world-leading research and innovation center in nanoelectronics and digital technologies located in Europe. The system will be used in technology development for advanced logic devices. The system shipped in the third quarter of 2023.
Executive Vice President, Marketing and Applications, Greg Redinbo, commented, “We’re pleased to support growth in the advanced logic market with a new customer focused on R&D for sub 3 nanometer logic device development. This is the second Purion Dragon placed in an advanced logic R&D environment.
We designed the Purion Dragon specifically to address chipmakers’ most challenging ion implantation applications by delivering the highest levels of process control with significant productivity gains for high current applications. The Purion Dragon features a unique high current implanter architecture, featuring innovative orthogonal beam optics, and is designed to address critical implant steps for advanced memory and logic applications.”
Original – Axcelis Technologies
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Littelfuse, Inc. announced the release of IXTY2P50PA, the first automotive-grade PolarP™ P-Channel Power MOSFET. This innovative product design meets the demanding requirements of automotive applications, providing exceptional performance and reliability.
The key differentiator of the –500 V, –2 A IXTY2P50PA is its AEC-Q101 qualification, making it ideal for automotive applications. This qualification ensures that the MOSFET meets the automotive industry’s stringent quality and reliability standards. With this qualification, automotive manufacturers can trust that the IXTY2P50PA will deliver exceptional application performance and reliability.
One of the standout features is its low conduction loss. With a maximum on-state resistance of 4.2 Ω, this P-Channel Power MOSFET offers reduced power dissipation, decreasing heat generation and improving efficiency in the end applications. Additionally, the MOSFET provides excellent switching performance, with a low gate charge of 11.9 nC, allowing for fast and efficient operation.
Another key advantage is its ruggedness in demanding operating environments and applications. With its dynamic dv/dt and avalanche rating, this MOSFET can withstand harsh conditions and deliver reliable performance. This combination makes it an excellent choice for automotive applications that require durability and reliability.
Furthermore, the IXTY2P50PA high-voltage automotive P-channel MOSFET enables a power-dense PCB design, thanks to its miniature TO-252 (DPAK) footprint in surface mount form factor. This compact footprint results in significant space savings on the PCB, allowing for more efficient and compact designs. Automotive manufacturers can benefit from this space-saving design, enabling them to optimize their applications and achieve greater functionality in limited space.
The PolarP Series is ideally suited for a range of automotive electronics and industrial applications, including:
- Automotive ECUs
- Automotive sensor circuits
- High-side switches
- Push-pull amplifiers
- Automatic test equipment
- Current regulators
Commenting on the launch of IXTY2P50PA, Raymon Zhou, Product Marketing Manager at Littelfuse, said, “We are thrilled to introduce the first automotive-grade PolarP P-Channel Power MOSFET to the market. The IXTY2P50PA offers exceptional performance and reliability, making it ideal for demanding automotive applications. With its AEC-Q101 qualification and competitive specifications, we believe this MOSFET will greatly benefit automotive manufacturers.”
Original – Littelfuse
