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SemiQ announced that it has expanded its portfolio of QSiC™ Silicon Carbide modules with the launch of a family of 1200V MOSFETs that pairs with or without 1200V SiC Schottky Diodes in a SOT-227 package.
Crafted from high-performance ceramics and rigorously engineered to function with unwavering reliability in challenging conditions, the newly introduced SemiQ SiC modules achieve remarkably high performance. This enhanced performance empowers higher power densities and more streamlined design configurations.
The QSiC™ modules feature high breakdown voltage (> 1400 V), high-temperature operation (Tj = 175 °C), and low Rds(On) shift over the full operating temperature range while providing industry-leading gate oxide stability and gate oxide lifetime, avalanche (UIS) ruggedness, and extended short-circuit withstand times.
Target markets for the new QSiC™ modules with our existing SOT-227 SiC SBD modules include EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, and other automotive and industrial power applications.
All of the new QSiC™ modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) to ensure requisite industrial grade quality levels.
Dr. Timothy Han, President at SemiQ, said, “We are delighted with the customer input and needs for our new family of QSiC™ high-power modules and thank our SemiQ team who have worked tirelessly to build and qualify our latest QSiC™ modules.”
SemiQ’s new 1200V SOT-227 modules are available in 20mΩ, 40mΩ, 80mΩ SiC MOSFET categories. A table with part numbers is shown below.
Part Numbers Circuit Configuration Ratings, Packages Rds(on), mΩ GCMX020B120S1-E1 Single MOSFET w/o SBD 1200V/113A, SOT-227 20 GCMS020B120S1-E1 Single MOSFET w SBD 1200V/113A, SOT-227 20 GCMX040B120S1-E1 Single MOSFET w/o SBD 1200V/57A, SOT-227 40 GCMS040B120S1-E1 Single MOSFET w SBD 1200V/57A, SOT-227 40 GCMX080B120S1-E1 Single MOSFET w/o SBD 1200V/30A, SOT-227 80 GCMS080B120S1-E1 Single MOSFET w SBD 1200V/30A, SOT-227 80 Original – SemiQ
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Soitec announced its revenue for the second quarter of fiscal year 2024 and its results for the first half of fiscal year 2024 (ended on September 30th, 2023). The financial statements were approved by the Board of Directors during its meeting today.
- Q2’24 revenue reached €245m, down 7% at constant exchange rates and perimeter compared to Q2’23
- H1’24 revenue at €401m, down 15% both at constant exchange rates and perimeter and on a reported basis compared with H1’23 – in line with guidance
- H1’24 EBITDA margin stood at the robust level of 33% of revenue while the Company maintained significant investment in R&D
- Anticipated return to a slight year-on-year organic growth in H2’24, leading to a moderate downward revision of FY24 outlook: mid-single digit decline in FY’24 revenue expected at constant exchange rate and EBITDA1 margin2 anticipated around 35%
Pierre Barnabé, Soitec’s CEO, commented: “With a sequential growth of over 50% compared to the first quarter, our second-quarter revenue rebounded significantly, as we had anticipated. This was particularly the case in Mobile Communications as the inventory correction across the smartphone value chain eased. We continue to leverage strong demand in Automotive to deploy our SmartSiC™roadmap and we continue to progress actively with several customers.
Overall, our first half revenue is in line with our expectations. We have maintained strong profitability and a solid financial position, while continuing to invest in R&D and industrial capacity, as well as building inventories to prepare for H2’24.
Looking ahead, we maintain our growth perspectives for the second part of the fiscal year. We note however that the absorption of RF-SOI inventories at our customers level will last longer than anticipated. At the same time, we continue to expect sustained demand in Automotive & Industrial as well as in Smart Devices. Consequently, we now anticipate a full-fiscal-year revenue decline of around mid-single digit percentage, and an EBITDA margin of around 35%. After this transition year, we will resume our growth trajectory” added Pierre Barnabé.
FY’24 outlook
Soitec confirms growth recovery in the second half of FY’24. Against the backdrop of a weaker-than-expected smartphone market, the extent of the inventory correction at our customers level is greater than anticipated. We confirm strong traction for our Automotive & Industrial and Smart Devices divisions. We now anticipate our FY’24 revenue to slightly decline, by around a mid-single digit percentage, compared to FY’23, at constant exchange rates and perimeter.
As a result, FY’24 EBITDA margin is now expected to be around 35% of revenue. The Group will continue to implement cost control measures, while further investing significantly in R&D.
FY’24 Capital expenditure is expected to be around 290 million Euros in order to support growth beyond FY’24. Soitec’s growth outlook remain very strong: while the SOI content within end devices continues to increase, the ongoing penetration of the Group’s products across its three end markets and the successful deployment of its expansion into Compound Semiconductors with POI and SmartSiC™ becoming new significant growth drivers in the future.
Original – Soitec
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Transphorm, Inc. and Allegro MicroSystems, Inc. announced a collaboration including Transphorm’s SuperGaN® FETs and Allegro’s AHV85110 Isolated Gate Driver to enable the expansion of GaN power system design for high power applications.
Transphorm’s SuperGaN FETs are designed to work in various topologies and are available in several different packages to support a wide power range while also satisfying diverse end application requirements. SuperGaN FETs are used in multiple commercial products, including higher power systems where they are proven to notably increase reliability, power density, and efficiency.
Allegro’s self-powered, single-channel isolated gate driver IC is optimized for driving GaN FETs in multiple applications and circuits. The AHV85110 is proven to enhance driver efficiency by as much as 50% compared to competitive gate drivers. This unique solution greatly simplifies the system design, reduces noise by 10x and common mode capacitance by 15 times compared to other solutions in the market.
“Allegro’s AHV85110 High Voltage Gate Driver provides a highly compact and efficient power stage implementation that helps to achieve an approximate 30 percent footprint reduction with the least number of external components and bias supply requirements around Transphorm’s power devices,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm.
“Combined with SuperGaN’s highest reliability and superior dynamic switching performance over competing technologies, the end result is a more efficient, more robust solution with increased power density in critical applications such as server, data centers, renewables and electric vehicles.”
“We are excited about working with Transphorm on a collaboration that further supports Allegro’s focus towards helping customers optimize GaN-based system development and design,” said Vijay Mangtani, Vice President and General Manager of High Voltage Power, Allegro MicroSystems. “We are looking forward to the opportunity to combine our high voltage isolated gate driver AHV85110 with Transphorm’s SuperGaN FET to enable higher power density, higher efficiency, and higher power output in smaller form factors and provide value to both our and Transphorm’s customers.”
Those interested in testing the collaborative solution can do so via Allegro’s APEK85110KNH-06-T evaluation board. The board incorporates both the AHV85110 designed to work in various applications along with Transphorm’s recently announced TOLL packageavailable in three devices with on-resistances of 35, 50, and 72 milliohms.
Original – Transphorm
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Today, Infineon Technologies AG is reporting results for the fourth quarter and the full fiscal year, both of which ended on 30 September 2023.
“In the 2023 fiscal year, Infineon has set new records for revenue and profitability. The results are an initial confirmation of our more ambitious course we embarked on as a company a year ago,” says Jochen Hanebeck, CEO of Infineon.
“Nevertheless, we find ourselves in an environment that continues to present challenges. We are seeing different trends in our target markets. Structural semiconductor growth in the areas of renewable energy, electromobility – especially in China – and microcontrollers for the automotive industry remains unabated. In contrast, consumer, communication, computing and IoT applications are experiencing a temporary period of low demand. Overall, we are expecting revenue growth to continue in the 2024 fiscal year but at a slower rate. We are reacting decisively to the market situation. At the same time, we are continuing to implement our strategy consistently with regard to structural growth opportunities and we are reinforcing our leading position in power systems and IoT with long-term investments.”
- Q4 FY 2023: Revenue €4.149 billion, Segment Result €1.044 billion, Segment Result Margin 25.2 percent, Free Cash Flow €614 million
- FY 2023: Revenue €16.309 billion, up 15 percent on the prior year; Segment Result €4.399 billion, up 30 percent year on year; Segment Result Margin 27.0 percent; adjusted earnings per share €2.65, up 35 percent on the prior year; Free Cash Flow €1.158 billion, adjusted Free Cash Flow €1.638 billion
- Outlook for FY 2024: Based on an assumed exchange rate of US$1.05 to the euro, revenue of around €17 billion (plus or minus €500 million) expected, with a Segment Result Margin of around 24 percent at the mid-point of the guided revenue range. Adjusted gross margin should be around 45 percent. Investments of approximately €3.3 billion planned. Free Cash Flow adjusted for investment in frontend buildings and the acquisition of GaN Systems should be around €2.2 billion and reported Free Cash Flow around €400 million
- Outlook for Q1 FY 2024: Based on an assumed exchange rate of US$1.05 to the euro, revenue of around €3.8 billion expected. On this basis, Segment Result Margin forecast to be around 22 percent
- Dividend proposal for FY 2023: Increase from €0.32 to €0.35 per share
Original – Infineon Technologies
