Solitron Devices announced the introduction of the SD11487, the industry’s first hermetically sealed Silicon Carbide (SiC) Power Module for high reliability applications.
With a unique hermetic packaging format, the 51mm x 30mm x 8mm outline is the smallest hermetically sealed high reliability, high voltage, half-bridge on the market. The integrated format maximizes power density while minimizing loop inductance. 60 mil pins for the power output stage are isolated on one side of the package to allow simple power bussing while 30 mil pins are on the opposite side for control signals.
The SD11487 is a half bridge configuration with two 1200V 12mΩ SiC MOSFETs. Also included in the module are two freewheeling 1200V SiC Schottky diodes in parallel with the MOSFETs and an integrated NTC temperature sensor. Continuous drain current is specified at 95A.
With operating temperatures of -55°C to 175°C, the SD11487 is designed for the most demanding applications such as down hole exploration; space; and avionics. The hermetically sealed copper package combined with the Alumina Nitride direct bond copper substrate provide excellent thermal conductivity as well as case isolation. The integrated temperature sensing enables high level temperature protection.
Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. Higher efficiency levels than silicon due to significantly lower energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics significantly reducing system weight and size.
Original – Solitron Devices