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SemiQ Inc has expanded its QSiC™ power modules portfolio with the introduction of a new series of 1200V silicon-carbide (SiC) power MOSFETs in half-bridge packages.
Engineered and tested to operate reliably in demanding environments, these new compact, high-performance modules enable high-power-density implementations while minimizing dynamic and static losses.
Featuring high breakdown voltage (>1400V), the new QSiC™ modules support high-temperature operation (Tj = 175°C) with low Rds(On) shift over the full temperature range. In addition, the modules exhibit industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time.
With a solid foundation of high-performance ceramics, the new SiC modules are suitable for EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, Vienna rectifiers, and other automotive and industrial applications.
To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ’s modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow achieving the required automotive and industrial grade quality levels. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V.
Dr. Timothy Han, President at SemiQ, said, “SemiQ’s commitment to reliability and testing sets us apart in the semiconductor industry. Our high-performance QSiC™ 1200V MOSFET modules are proven to withstand challenging conditions, enabling engineers to develop reliable systems for the renewable, automotive, medical, and industrial sectors.”
SemiQ’s new 1200V 5mΩ, 10mΩ, and 20mΩ SiC MOSFET are available in industry standard half-bridge packages.
Part Number Circuit Configuration Ratings Typ. RdsOn [mΩ] GCMX010A120B2B1P Half-bridge 1200V/214A, B2 9 GCMX020A120B2B1P Half-bridge 1200V/102A, B2 19 GCMX005A120B3B1P Half-bridge 1200V/383A, B3 4.4 GCMX010A120B3B1P Half-bridge 1200V/173A, B3 9 Original – SemiQ
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Power Integrations announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.
SCALE™-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The new drivers also include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.
Thorsten Schmidt, product marketing manager at Power Integrations, commented: “The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules. This reduces both system design and sourcing challenges, and the plug-and-play approach speeds development.”
Ideal for applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid, 2SP0230T2x0 gate drivers are based on Power Integrations’ proven SCALE-2 technology, resulting in higher levels of integration, smaller size, more functionality and enhanced system reliability.
Power Integrations’ compact 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation; this is 500 V higher than conventional drivers, which are typically limited to 1200 V.
Original – Power Integrations
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Alpha and Omega Semiconductor Limited (AOS) announced the release of its state-of-the-art automotive TO-Leadless (TOLL) package for the company’s automotive grade 80V and 100V MOSFETs. AOS’s TOLL package is developed to optimize the company’s power semiconductors as essential components in the evolution of e-mobility such as 2- and 3-wheel and other light vehicles. This new package helps designers meet the ongoing trend to electrify vehicles with the latest battery technology to meet clean energy zero-emission goals.
These capabilities make AOS 80V and 100V MOSFETs ideally suited for automotive BLDC motor and battery management applications for e-mobility. The AOS automotive TOLL package is designed to achieve the highest current capability using AOS’s innovative approach which utilizes advanced clip technology to achieve a high in-rush current rating.
In addition, AOS TOLL packaging with clip technology offers a very low package resistance and inductance, enabling improved EMI performance compared to other TOLL packages utilizing standard wire-bonding technology. With the combination of low ohmic and high current capability, utilizing AOS TOLL packaging also allows designers to reduce the number of parallel MOSFETs in high current applications. This, in turn, helps to enable higher power density requirements without compromising reliability in applications where robustness and reliability are key design objectives.
Providing a more compact solution for space-constrained designs, the AOTL66810Q (80V) and AOTL66912Q (100V) have a 30 percent smaller footprint compared to a TO-263 (D2PAK) package. These new devices in TOLL packaging are qualified to AEC-Q101, PPAP capable, and are manufactured in IATF 16949 certified facilities making them ideally suited for demanding application requirements in e-mobility. AOS TOLL devices are also compatible with automated optical inspection (AOI) manufacturing requirements.
“Using the AOS Automotive TOLL package with clip technology offers significant performance improvements in a robust package. The advanced technologies in our AOTL66810Q and AOTL66912Q MOSFETs will help simplify new designs allowing them to reduce the number of devices in parallel while providing the necessary higher current capability to enable overall system cost savings,” said Peter H. Wilson, Marketing Sr. Director of MOSFET product line at AOS.
Part Number VDS (V) VGS (±V) Continuous Drain Current (A) Pulsed Drain Current (A) RDS(ON) Max (mOhms) @10V @25°C @100°C @25°C AOTL66810Q 80 20 445 247 1780 1.25 AOTL66912Q 100 20 370 269 1480 1.7 Original – Alpha and Omega Semiconductor
