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STMicroelectronics will host its Industrial Summit 2023 at the Futian Shangri-La Hotel, in Shenzhen, China, on Sep 28.
In recognition of the extraordinary climate-related challenges, ST has long been guided by its unwavering commitment to sustainability. The Company is actively working to increase power efficiency with its cutting-edge solutions for diffused intelligence (Digitalization) and Energy and Power Conversion, forging a path towards reduced carbon emissions and a sustainable future.
The Industrial Summit is the industry’s premier technology showcase of ST’s Industrial products and solutions. The theme of this year’s event is “Powering Your Sustainable Innovation.” Visitors will hear about the Company’s focus on Smart Power and Smart Digitalization during insightful keynotes and about 30 technical sessions, while also having the chance to experience over 150 demos focused on 3 market segments: Automation, Power & Energy, and Motor Control. The Summit will also host a number of showstoppers developed in close collaboration with ST’s customers and partners.
Innovation highlights in the key focus areas
To provide ST’s Industrial customers in Asia with strong and efficient support for their development activities, ST operates three dedicated Industrial Competence Centers focused on Motor Control, Automation, and Power and Energy that are located close to customers. At Industrial Summit 2023, ST and its customers and partners will showcase multiple innovations listed below leveraging expertise and system-level solutions from these three industrial Competence Centers.
Microgrid: Microgrid is a distributed grid network that is connected to renewable sources and energy storage to minimize energy transmission loss and provide efficient energy utilization while maintaining the benefits of grid connection. ST joined forces with customers to showcase a Microgrid application with multiple energy generation and storage solutions including a photovoltaic (PV) optimizer, a string inverter, a micro-inverter, a hybrid inverter with energy storage, stand-alone energy storage, and an energy-usage example using EV charging stations.
A list of the advanced technologies ST used in this multiapplication demo includes a full range of industry-leading STM32 MCUs, breakthrough wide bandgap power technologies such as Silicon Carbide (SiC) and Gallium nitride (GaN), power metering products, and power-line communication (PLC) controllers. In particular, GaN power discretes and system-in-package devices like ST’s MasterGaN and Sti2GaN are expected to be the preferred technology for future residential PV+ energy storage system (ESS) applications that require high power density and energy efficiency.
KNX Energy Management System: KNX is a global standard with high compatibility and a huge supplier base, making it ideal for the efficient energy system in buildings. At the Industrial Summit, ST will showcase how a KNX Energy-Management System manages energy consumption and generation from various energy sources, such as Solar Inverters, Microgrid, and Battery Storage, for all aspects of applications in buildings, home appliances, and EV charging stations. The KNX Energy-Management System can play an important role in achieving carbon neutrality, enabling energy production and consumption tracking, as well as static and dynamic load management.
By adopting this system, users can proactively decide whether renewable energy should be consumed or stored, while the system provides an optimized energy solution based on user needs. STKNX is a highly competitive KNX transceiver used in a wide range of KNX products from many manufacturers. In addition, ST’s best-in-class MCU, SiC and GaN power technologies, and power conversion ICs are also utilized in this energy-management system.
Servo Drives Orchestra: According to the International Energy Agency (IEA), 53% of global electricity is consumed by motors, which makes motor-control efficiency among the most effective targets for sustainability benefits. On top of better energy performance of the motors themselves, great potential for improvement lies in how electric motors are integrated into industrial equipment and systems.
At the Summit, ST will showcase its most comprehensive motor-control demo – the Servo Drives Orchestra. This solution comprises 8 reference designs with loads ranging from 500W to 22kW. Each of the motors controls a rope that pulls a load and demonstrates high-precision position control, in harmonic movement coordinated simultaneously with the other motors. Each motor drive executes the commands sent by I/O link from the podium where an HMI (Human Machine Interface) controls the mode selection while each drive controller collects temperature and vibration data, executes condition-monitoring algorithms, and wirelessly sends data to the Baidu Cloud. The cloud then reports back system behavior and power savings, among other parameters.
ST is a leading technology provider for servo drives, power-device technologies, computational processing, isolation devices, industrial safety product, and for ecosystems, and for Industrial Automation, Predictive Maintenance, and Connectivity. The Servo Drives Orchestra demo uses an STM32 microcontroller, ST drivers, as well as SiC and GaN power solutions for overall efficiency improvement.
Efficient Transformation to Factory Automation: The use of IO-Link products in factory automation systems can simplify the installation, setup, maintenance, and repair processes, while also contributing to increased production efficiency, energy savings, and carbon neutrality. ST is committed to providing a complete solution for any IO-Link device applications, including a free IO-Link device mini stack, to help manufacturers optimize their operations and achieve greater sustainability.
ST will feature an Automated packing machine with automatic printing and labeling functions for smart factories that utilizes the Company’s IO-Link technology to manage digital input/output, sensors, and solenoid air valve drivers. The system is controlled by a PLC (Programmable Logic Controller), and the system status can be displayed and controlled on an HMI. By connecting the system to a LoRa node, the machine can be remotely monitored and controlled through the IoT Cloud via a LoRa Gateway. The machine uses Digital IO boards, sensor boards, and actuator boards developed by ST Automation Competence Center, demonstrating the comprehensive ST portfolio in action.
Original – STMicroelectronics
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At its annual Technology Summit in Europe beginning September 27th, GlobalFoundries (GF), is highlighting key advancements to its technology platforms and solutions that will enable better power efficiency, enhanced performance and security for applications across critical end markets including IoT, smart mobile and automotive. These milestones highlight GF’s semiconductor manufacturing leadership in product development, validation and market readiness for critical applications in IoT, 5G and 6G smartphones, and electric vehicles.
Building upon the GF Technology Summit in North America this past August, the sessions in Munich will focus on leading at the edge, manufacturing semiconductors in a digital, AI-driven, world through the evolving landscape of communications infrastructure and the electrification of vehicles.
GF’s President and CEO, Dr. Thomas Caulfield, will kick-off the event with a keynote address entitled “Essential chips fuel the era of AI,” which emphasizes the transformative potential of these technologies and their significance in the rapidly evolving semiconductor landscape. In addition, Peter Schiefer, Infineon Division President Automotive, Jean-Marc Chery, President and CEO of STMicroelectronics and Karsten Schnake, Board Member for Procurement at of ŠKODA AUTO & Head of Project COMPASS at Volkswagen AG will take the stage.
Dr. Thomas Caulfield, joined by leaders in the fabless semiconductor and end-markets industries, will also share GF’s corporate vision for manufacturing the essential chips we rely on to live, work, and connect. In addition, GF’s technology and product management leaders, accompanied by partners in the semiconductor design and manufacturing ecosystem, will outline the company’s technology and solutions roadmap.
Held at the Sofitel Munich Bayerpost, the two-day summit also introduces a new format. This year, representatives from GF’s Technology, Business, and Commercial teams are on hand to host small group meetings, facilitating deeper discussions and partnerships with GF customers.
Original – GlobalFoundries
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During the past decade combination “silicon carbide” or more often “SiC” has become very popular in the world of power electronics. Many companies have started to evaluate the possibility of using SiC instead of Si in their projects. As many say, silicon carbide is here to replace silicon, and they might be right considering that SiC MOSFETs used in power semiconductor devices bring numerous advantages compared with their silicon counterparts.
SiC has a higher critical breakdown field and thermal conductivity and, a wider bandgap, which leads to lower energy losses, a lower leakage current at higher temperatures. Besides, SiC can operate at much higher frequencies. On a system level, it means using less additional components, better thermal management, and an overall smaller footprint.
This is one of the reasons why today automotive Tier-1 and OEM companies prefer to use SiC for their new projects in vehicle electrification. With SiC they can get the same efficiency with several times smaller package. For the electric car size and weight of power electronics systems are critical.
Working in the power semiconductors industry for many years, with Si and SiC power devices in particular, I see that the number of companies and end applications adopting silicon carbide is growing fast. Even though SiC is quite a young technology, and the first commercial SiC power MOSFET dates back to 2011, nowadays, we already have over ten SiC power device vendors who deliver high-quality products used in electric vehicles, solar inverters, public transportation, welding equipment, marine, medical and aerospace.
With the number of new SiC fabs and production expansions announced during the past three years it is clear that silicon carbide technology is here to stay, and here to grow further. Many analytical agencies predict that the total SiC market will reach 10 billion USD by 2030 or even earlier. And despite the fact that in volume SiC power semiconductors market still lags behind silicon. It grows faster, quite faster than expected several years ago.
Despite the fast growth and penetration into the power electronics market, many companies still feel uncomfortable when they hear about silicon carbide and the benefits it has. During numerous negotiations and talks with the companies using power semiconductor devices, I shortlisted the most common barriers preventing them from switching from silicon to silicon carbide, or from increasing the number of SiC-based projects they already have.
To further scale this data, recently I had a poll on LinkedIn within the power electronics community. A similar poll I ran during the latest EPE’23 ECCE Europe Conference, which was held in Aalborg, Denmark. Both polls’ participants come from power semiconductors companies or from companies using power semiconductors.
Combined poll results look like this:
- Price – 60%
- Availability – 20%
- Unclear benefits over Si – 7%
- Not enough market feedback – 13%
It is clear that price is still the major concern and barrier. Even though the price has tremendously decreased during the past ten years, it remains one of the key factors why many companies prefer to use Si-based semiconductors.
The availability of SiC wafers or SiC-based devices accounts for another 20% of doubts coming from the end users. The lead time of SiC has been discussed many times, and the situation for many stays unclear. And it is the same for the remaining 20% of poll results coming from unclear benefits of SiC and lack of market feedback. Silicon power devices have been in use for decades, while SiC is just at the beginning of its road. That is why many engineers prefer to work with the technology they know, the technology they have been very familiar with since their school.
From the first look the answers and results of the poll seem to be right and they correspond to the current market situation. However, working with Si and SiC, I know that each and every one of the answers listed are just the barriers and not the final verdict.
Semiconductor companies should pay more attention to those 20% of the answers referring to lack of market data. With the right approach SiC will bring the power semiconductors industry to a new level.
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Navitas Semiconductor announced the 2023 Investor Day, to be held at the company’s new headquarters, on Tuesday 12th December, 2023.
Meeting highlights include:
- Four major new GaN/SiC technology platforms and five focus markets, including new GaNSafe technology, positioned to revolutionize AI-based data centers, EV, and renewable applications.
- Invited customer presentations, with leading-edge applications enabled by Navitas.
- $1B+ customer pipeline & what this means to Navitas growth trajectory, with a preview of 2024 forecast and long-term targets.
- Navitas’ unique, detailed view on the past, present and future of power electronics as we look to “Electrify Our World” (guided tour, and management small-group meetings).
For in-person attendance or participation virtually via live-stream, please contact ir@navitassemi.com
Original – Navitas Semiconductor
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Infineon Technologies AG has taken over as head and coordinator of the broad-scope European research project EECONE (European ECOsystem for greeN Electronics), intended to make electronics in Europe more sustainable. The objective is to investigate the corresponding technologies along the entire value chain, from design, manufacture and use all the way to recycling. EECONE is one of the Key Digital Technologies research projects supported by the European Union as a Joint Undertaking. 49 partners are participating in the project, which has a volume of approximately 35 million euros total costs. The project is being funded by the European Union and the national governments of the participating companies with around 20 million euros.
“Electronics are fundamental to improving the sustainability of many applications. But this is not sufficient, electronics themselves have to become greener,” says Constanze Hufenbecher, Infineon Management Board member and Chief Digital Transformation Officer. “Infineon is pleased to take on the lead role in the research project EECONE in order to advance the circular economy together with our partners along the value chain. The only way to achieve sustainability from design and use and all the way to recycling is by working together.”
EECONE is aligned with the 6R concept (Reduce, Reliability, Repair, Reuse, Refurbish, Recycle); the amount of materials required by electronics is to be reduced, electronics are to be made more reliable, easier to fix and use again, and easier to recondition and to recycle. The project will investigate a total of ten application examples from the widest possible variety of fields in terms of developing green electronics. The applications are from the areas Automotive, Consumer Electronics, Health, Information and Communication Technologies, Aviation and Agriculture.
Focus points are for example reducing the amount of material used by making circuit boards thinner or smaller, or improving sustainability by introducing materials which are easier to separate during recycling. Facilitating the replacement of not only circuit boards but also of semiconductors is to make it easier to repair devices. The technologies involved could also make it possible to reuse and recycle electronic components. The project will in addition develop technologies which for example generate and store their own power in IoT devices.
New, ecologically friendly materials are to make it easier to recycle lithium-ion batteries. Artificial Intelligence will be used to prolong the service lives of electronic equipment, while tools for more sustainable electronic design, including comprehensive impact assessments for the use of electronics, are to be developed as well. EECONE also covers the use, dissemination and standardization of electronics and will train specialists in handling electronic refuse.
The EECONE research project has a planned duration of three years. It will establish decisive foundations for the sustainable development, manufacturing and use of electronics in Europe. The on-site inaugural event of the project will be held in Toulouse on 20 and 21 September 2023.
The 49 EECONE Research Project Partners
- 4Mod Technology (FR)
- Acorde Technologies Sag (ES)
- Agencia Estatal Consejo superior de Investigaciones cientificas (ES)
- Aniah SAS (FR)
- Arcelik A.S. (TR)
- Atea Sverige AG (SE)
- AT&S – Austria Technologie & Systemtechnik (AT)
- Centre national de la Recherche scientifique (FR)
- Charokopeio Panepstimio (EL)
- Commissariat a l’Energie atomique et aux Energies alternatives (FR)
- Dassault Systemes (FR)
- Design and Reuse (FR)
- EcoDC AG (SE)
- Fraunhofer Gesellschaft zur Forderung der angewandten Forschung e.V. (DE)
- Get electronique (FR)
- Infineon Technologies AG (DE)
- Institut mikroelektronickych Aplikaci SRO (CZ)
- Institut polytechnique de Grenoble (FR)
- Interactive fully electrical Vehicles SRL (IT)
- Interuniversitair Microelectronica Centrum (BE)
- Leonardo – Societa per Azioni (IT)
- Luna Geber Engineering SRL (IT)
- Melsen Tech A/S (DK)
- Nerosubianco SRL (IT)
- Orbotech Ltd. (IL)
- Ozyegin Universitesi (TR)
- Premo, S.L. (ES)
- Research Institutes of Sweden AB (SE)
- Robert Bosch GmbH (DE)
- Siec Badawcza Lukasiewecz – Instytut Mikroelektronik i Fotoniki (PL)
- Silicon Austria Labs GmbH (AT)
- Smartsol SIA (LV)
- Soitec SA (FR)
- STMicroelectronics SAS (FR)
- Synano BV (NL)
- Technicka Univerzita v Liberci (CZ)
- Technische Hochschule Deggendorf (DE)
- Tecnologias Servicios telematicos y Sistemas SA (ES)
- Teknologisk Institut (DK)
- Tetradis (FR)
- Thales dis France SAS (FR)
- Università degli Studi di Perugia (IT)
- Université catholique de Louvain (BE)
- Université Grenoble Alpes (FR)
- Ustav teorie informace a Automatzizace AV CR VVI (CZ)
- Vitesco Technologies France (FR)
- Weeecycling (FR)
Associated Partners
- Centre Suisse d’Electronique et de Microtechnique SA – Recherche et Developpement (CH)
- Swiss Vault Systems GmbH (CH)
Original – Infineon Technologies
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The U.S. Department of Defense (DoD) has awarded GlobalFoundries (GF) a new 10-year contract for a supply of securely manufactured, U.S.-made semiconductors for use across a wide range of critical aerospace and defense applications.
With an initial award of $17.3 million this month and an overall 10-year spending ceiling of $3.1 billion, the new contract provides the DoD and its contractors with access to GF’s semiconductor technologies manufactured at its U.S. facilities. These GF facilities are DoD-accredited to the highest security level, Trusted Supplier Category 1A, which implements proven stringent security measures to protect sensitive information and manufacture chips with the highest levels of integrity to ensure they are uncompromised.
In addition to secure chip manufacturing for DoD systems used on land, air, sea, and in space, the new contract provides the DoD and its contractors with access to GF’s robust design ecosystem, IP libraries, early-access to new technologies in development, quick and efficient prototyping, and full-scale volume manufacturing. The contract was awarded through the DoD’s Defense Microelectronics Activity (DMEA) Trusted Access Program Office (TAPO).
“GF is proud to begin this new chapter of our decades-long partnership with the U.S government, and to continue serving as the leading supplier of securely manufactured essential chips for the U.S. aerospace and defense industry,” said Mike Cadigan, chief corporate and government affairs officer at GF. “This partnership provides DoD programs with ‘front-door access’ to advanced technologies in a way that is scalable and highly efficient. For this work, GF is accredited to provide the right level of security required for each program, from GF’s industry leading GF Shield protections, to strictly export controlled handling (e.g. ITAR), to the highest level of accredited microelectronics manufacturing security on the planet, Trusted Category 1A.”
This new contract is the third sequential 10-year contract of its kind between the DoD and the Trusted Foundry business team at GF and is the latest milestone in the longstanding partnership between the department and the company.
Original – GlobalFoundries
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NXP Semiconductors N.V. has been honored by three automotive partners. The company has collected supplier awards from DENSO and Hyundai Motor Group for its outstanding efforts in helping to ensure supply capacity, continuity and excellent customer service, as well as an innovation award from BMW Group for its digital car key solution.
“Successfully navigating the auto industry’s complex supply chain landscape to deliver true innovation our customers need can only be achieved through close collaboration with semiconductor manufacturers, Tier 1s and OEMs. We are extremely proud to be honored by BMW Group for our innovative UWB based digital car key solution, and by both DENSO and Hyundai Motor Group for NXP’s steadfast commitment to meeting our customer’s needs. Our teams work tirelessly to develop breakthrough technologies and foster collaborative customer relationships that enable NXP to deliver strategic long-term forecasts and expand capacity where needed, despite challenging conditions.”
Ron Martino, Executive Vice President, Global Sales at NXP
DENSO’s Business Partner of the Year Awards are given to companies that demonstrate a shared commitment to outstanding performance, exceptional quality, sustainability, diversity and inclusion, and advancing mobility. DENSO’s Gold Award for Special Achievements recognizes NXP’s outstanding efforts to ensure business continuity despite difficult supply conditions while maintaining strong customer service levels.
“This past year has been defined by an urgent need to adapt and evolve for emerging mobility trends, from electrification to connectivity and much more. All of our partners, but especially award recipients, have been crucial in helping us navigate such changes and deliver for our customers – quickly, sustainably and with enhanced value.”
Mike Winkler, vice president of the North America Purchasing Group at DENSO
In April, NXP received the prestigious 2022 Global Supplier of the Year award from Hyundai Motor Group, making NXP one of the first semiconductor vendors to receive such recognition. The award highlights the significance of the strong collaboration between semiconductor suppliers and auto OEMs from a supply and supply assurance viewpoint. It also recognizes NXP’s outstanding local team support and engagement in Korea.
In collaboration with Continental Automotive GmbH Regensburg, NXP was also awarded the BMW Group Supplier Innovation Award for the company’s innovative digital car key solution that leverages Ultra-Wideband technology. The digital key enables drivers to unlock their cars securely with their smartphones without needing a physical car key.
Original – NXP Semiconductors
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CDIL Semiconductors (Continental Device India Pvt. Ltd.), India’s first semiconductor chips and components manufacturer, will be adding new semiconductor packaging lines via the Government of India and MeitY’s SPECS scheme. With the new lines, CDIL aims to increase its annual capacity by 100 million units. The company initiated the first phase of this production with a surface mount packaging line of 50 million devices that will be inaugurated on September 28th, 2023 by Shri Rajeev Chandrasekhar Ji, Hon’ble Union Minister of State for Electronics and Information Technology & Skill Development and Entrepreneurship.
With 59 years of legacy, CDIL today is a semiconductor and electronics service provider to a worldwide customer base across Consumer, Industrial, Defence, Aerospace and Automotive. The company has many industry leaders as long term customers spread throughout the world including USA, UK, Germany, China, Hong Kong, Japan, South Korea, South Africa, and Egypt.
Commenting on the expansion of the product lines, Prithvideep Singh, General Manager, CDIL Semiconductors said, “In line with our steadfast commitment to innovation and market diversification, CDIL Semiconductors has strategically positioned itself to meet the burgeoning demands of the industry especially the power electronics, automotive, and defence sectors, both within India and on a global scale. As we reflect upon this progress, we recognize that this is only the beginning. The groundwork has been established and will stand as a pivotal cornerstone for the company’s future endeavours.”
CDIL has established an advanced high reliability (HiRel) and testing laboratory located at Mohali in addition to its NABL Accredited facility in Delhi. The HiRel laboratory is a crucial part of qualifying CDIL’s devices for stringent sectors like Automotive, Defence, and Aerospace.
Being the 1st Indian semiconductor company to obtain the IS/ISO 9002 and IATF 16949 quality system certifications, CDIL was the first to introduce India to silicon semiconductor technology in 1964. Currently, it produces a comprehensive range of discrete semiconductor devices including Transistors, Diodes, Rectifiers, Schottky Diodes, Thyristors, Voltage Regulators, Transient Voltage Suppressors and MOSFETS, with specialities in power Semiconductors, and high-reliability components.
Original – CDIL Semiconductors
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Toshiba Electronic Devices & Storage Corporation has started mass production of three 40 V N-channel MOSFETs using SOP Advance(WF) package for automotive and has expanded its lineup. The three models are “XPHR9904PS, XPH2R404PS and XPH3R304PS.”
The new products reduce drain-source On-resistance with the U-MOSIX process as with Toshiba’s precedence release products XPHR7904PS and XPH1R104PS. The drain-source On-resistance of XPH2R404PS is 2.4 mΩ (max), which is approximately 27 % lower than that of Toshiba’s existing product TPCA8083, and XPH3R304PS is 3.3 mΩ (max), which is approximately 42 % lower than that of Toshiba’s existing product TPCA8085.
The drain-source On-resistance of XPHR9904PS is 0.99 mΩ (max). Reducing drain-source On-resistance of these products contributes to low power consumption of automotive equipment. In addition, they are qualified with the automotive reliability standard AEC-Q101. The PPAP of IATF16949 is also available.
The package is a surface mount type SOP Advance(WF) that uses a wettable flank terminal structure, which facilitates automated visual inspection of the board mounting state.
Toshiba’s automotive MOSFETs support a variety of automotive applications and meet a wide range of customer needs.
Applications
- Automotive equipment: motor drives, switching power supplies, load switches, etc.
Features
- Low On-resistance
XPHR9904PS: RDS(ON)=0.99 mΩ (max) (VGS=10 V)
XPH2R404PS: RDS(ON)=2.4 mΩ (max) (VGS=10 V)
XPH3R304PS: RDS(ON)=3.3 mΩ (max) (VGS=10 V) - AEC-Q101 qualified
- PPAP of IATF16949 available
Original – Toshiba
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Power semiconductors based on silicon carbide (SiC) offer several advantages, like high efficiency, power density, voltage resistance, and reliability. This creates opportunities for new applications and improved charging station technology innovations. Infineon Technologies announced a collaboration with Infypower, a Chinese market leader in new energy vehicle charging. Infineon will provide INFY with the industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.
“The collaboration between Infineon and Infypower in the field of charging solutions for electric vehicles (EV) provides an excellent system-level technology solution for the local EV charging station industry,” said Dr. Peter Wawer, Division President of Infineon’s Green Industrial Power Division. “It will significantly improve charging efficiency, accelerate charging speed, and create a better user experience for owners of electric cars.”
“With Infineon’s more than 20 years of continuous advancement in SiC product offering and the strength of integrated technology, Infypower can consolidate and maintain its technological outstanding position in the industry by adopting state-of-the-art product processes and design solutions“, said Qiu Tianquan, President of Infypower China. “We can also set a new standard for charging efficiency of DC chargers for new energy vehicles. As a result, customers can enjoy more convenience and unique value, promoting the healthy development of the EV charging industry.”
SiC’s high power density enables the development of high-performance, lightweight, and compact chargers, especially for supercharging stations and ultra-compact wall-mounted DC charging stations. Compared to traditional silicon-based solutions, SiC technology in EV charging stations can increase efficiency by 1 percent, reducing energy losses and operating costs. In a 100 kW charging station, this translates to 1 kWh of electricity savings, saving 270 Euros annually and reducing carbon emissions by 3.5 tons. This drives the increasing adoption of SiC power devices in EV charging modules.
As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced an advanced design that provides high reliability for chargers. The devices offer a high threshold voltage and simplified gate driving . The CoolSiC MOSFET technology has been subjected to marathon stress tests and gate voltage jump stress tests before commercial release and regularly afterwards in form of monitoring to ensure highest gate reliability.
By integrating Infineon’s 1200 V CoolSiC MOSFETs, Infypower’s 30 kW DC charging module offers a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. In this way, it is well suited for the fast charging demand of most EVs while possessing a higher efficiency of 1 percent compared with other solutions on the market. Consequently, significant energy savings and carbon dioxide emission reduction are achieved, which are leading at a global level.
Original – Infineon Technologies
