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Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.
CoolSiC MOSFET Generation 2 (G2) technology continues to leverage performance capabilities of silicon carbide by enabling lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits to customers for various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies.
A DC fast charging station for electric vehicles which is equipped with CoolSiC G2 allows for up to 10 percent less power loss compared to previous generations, while enabling higher charging capacity without compromising form factors. Traction inverters based on CoolSiC G2 devices can further increase electric vehicle ranges. In the area of renewable energies, solar inverters designed with CoolSiC G2 make smaller sizes possible while maintaining a high power output, resulting in a lower cost per watt.
“Megatrends call for new and efficient ways to generate, transmit and consume energy. With the CoolSiC MOSFET G2, Infineon brings silicon carbide performance to a new level,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon.
“This new generation of SiC technology enables the accelerated design of more cost-optimized, compact, reliable, and highly efficient systems harvesting energy-savings and reducing CO 2 for every watt installed in the field. It’s a great example of Infineon’s relentless spirit, constantly pushing for innovation to drive decarbonization and digitalization in the industrial, consumer and automotive sectors.”
Contributing to high-performance CoolSiC G2 solutions, Infineon’s pioneer CoolSiC MOSFET trench technology provides an optimized design trade-off, allowing higher efficiency and reliability compared to SiC MOSFET technology available so far. Combined with the award-winning .XT packaging technology, Infineon is further increasing the potential of designs based on CoolSiC G2 with higher thermal conductivity, better assembly control and improved performance.
Mastering all relevant power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers design flexibility and leading-edge application know-how that meet the expectations and demands of modern designers. Innovative semiconductors based on wide-bandgap (WBG) materials like SiC and GaN are the key to conscious and efficient use of energy in fostering decarbonization.
Original – Infineon Technologies
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CG Power and Industrial Solutions Limited, a part of Tube Investments of India Limited and the Murugappa Group, Renesas Electronics Corporation and Stars Microelectronics (Thailand) Public Co. Ltd., a Thailand-based Outsourced Semiconductor Assembly and Test (OSAT) provider; had recently signed a Joint Venture Agreement (JVA) to establish a Joint Venture (JV) to build and operate an OSAT facility in India.
The Union Cabinet, chaired by Prime Minister Shri Narendra Modi, approved the project of the JV under India’s Semiconductor scheme on February 29, 2024.
The JV brings together unique capabilities of the partners with a vision to “Make in India for the World.” CG, with around 86 years of manufacturing expertise, is keen to build semiconductor capabilities and ecosystem in India. Renesas, a leading semiconductor company headquartered in Japan, will provide advanced semiconductor technology and expertise. Stars Microelectronics, a Thai based OSAT, will provide both technology for legacy packages and training and enablement.
The JV will be 92.3% owned by CG, with Renesas and Stars Microelectronics each holding equity capital of approximately 6.8% and 0.9%, respectively. The JV plans to invest INR 7,600 crores over a five-year period, which will be financed through a mix of subsidies, equity, and potential bank borrowings as required.
The JV will set up a state-of-the-art manufacturing facility in Sanand, Gujarat, with a capacity that will ramp up to 15 million units per day. The JV will manufacture a wide range of products – ranging from legacy packages such as QFN and QFP to advanced packages such as FC BGA, and FC CSP. The JV will cater to industries such as automotive, consumer, industrial, 5G, to name a few.
Commenting on this new venture, Mr. S. Vellayan, Chairman, CG Power and Industrial Solutions Limited, said, “CG’s entry into the semiconductor manufacturing marks a strategic diversification for us. Our partners, Renesas and Stars Microelectronics, will make our learning curves steeper and help us focus on innovation and excellence.
This is a very exciting phase for the entire nation, and we are very keen to build out India’s semiconductor capability and ecosystem.”
Mr. Natarajan Srinivasan, Managing Director, CG Power and Industrial Solutions Limited, added, “It is a matter of great pride for CG to implement this project of National importance.”
Commenting on the partnership, Mr. Hidetoshi Shibata, CEO of Renesas said, “India is a critical part of Renesas’ business. We value its innovative landscape and robust potential growth and are committed to accelerating our investment in India. By partnering with the Murugappa Group and Stars Microelectronics, we will bolster India’s semiconductor ecosystem and address the growing semiconductor demand for the customers worldwide.”
Mr. Prompong Chaikul, Chairman of Executive Committee of Stars Microelectronics (Thailand) Public Co., Ltd added, “We are deeply honored to join forces in this thrilling venture. Leveraging our expertise and experience in OSAT, we are committed to providing robust support to ensure the success of this project in India.”
Original – Renesas Electronics
