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EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:
- The EPC9193 standard reference design uses a single FET for each switch position and can deliver up to 30 ARMS maximum output current.
- A high current configuration version of the reference design, the EPC9193HC, uses two paralleled FETs per switch position with the ability to deliver up to 60 Apk (42 ARMS) maximum output current.
Both versions of the EPC9193 contain all the necessary critical function circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions. The EPC9193 boards measure just 130 mm x 100 mm (including connector).
Major benefits of a GaN-based motor drive are exhibited with these reference design boards, including lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, and lower torque ripple for improved precision. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
EPC provides full demonstration kits, which include interface boards that connect the inverter board to the controller board development tool for fast prototyping that reduce design cycle times.
“GaN-based inverters enhance motor efficiency and lower costs, expensive silicon MOSFET inverters”, said Alex Lidow, CEO of EPC. “This results in smaller, lighter, quieter motors with increased torque, range, and precision.”
Original – Efficient Power Conversion
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Teledyne e2v HiRel announced the availability of radiation tolerant RF and Power products for the evolving New Space market. Qualified based on the EEE-INST-002 space grade standard, these plastic packaged products are qualified for the harsh environment of space with –55°C to +125°C temperature operating ratings, and are radiation tolerant for use in LEO, MEO, and GEO missions.
The RF products include several low noise amplifiers (LNA) and are ideal for demanding high-reliability space applications where low noise figure, minimal power consumption, and small footprint are critical to mission success. They are ideally suited for satellite communication systems that are increasing the power of radio signals so utilizing components with minimal noise and distortion help minimizing the degradation of digital signals.
These LNAs are developed in the radiation tolerant pHEMT technology semiconductor process technology. The monolithic microwave integrated circuit (MMIC) products are available in dual-flat no lead (DFN) plastic over molded SMT packages and are biased over single positive VDD supply voltages, eliminating the need for negative power rail voltages.
- The TDLNA002093SEP delivers a low noise figure of less than 0.37 dB, IDDQ from 30 mA to 100mA, and exceptional performance from 1 GHz (L-band) to 6 GHz (S-band) frequencies.
- The TDLNA0430SEP delivers an industry leading low noise figure of less than 0.35 dB, IDDQ of 60mA and exceptional performance from 0.3 GHz (UHF) to 3 GHz (S-band) frequencies.
- The TDLNA2050SEP delivers an industry leading low noise figure of less than 0.4 dB, IDDQ of 60mA and exceptional performance from 2.0 GHz (S-band) to 5 GHz (C-band) frequencies.
The Power products offerings include Gallium Nitride (GaN) technology High Electron Mobility Transistors up to 650V, currents up to 90 Amp, high switching frequencies, and low RDSON. These GaN solutions have easy gate-drive requirements and enable high power density designs with four times less space requirements than traditional MOSFETs. The TDG650E60xSP parts are available in extremely small non hermetic packages with either top-side and bottom-side thermal pads and are ideally suited for satellite power supply systems with space production screening.
“Today we’re announcing our New Space products offering of RF and Power products optimized for space applications,” said Mont Taylor, Vice President and Business Development Manager at Teledyne e2v HiRel. “These LNAs with their ultra low noise figures coupled with the high power density capabilities of GaN transistors, we believe these products will enable system designers with superior solutions for space based satellite communication applications.”Original – Teledyne e2v HiRel
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MCC Semi unveiled the latest innovation tailored specifically for the demanding automotive industry. Powered by 100V, MCU62N10YHE3 is the N-channel MOSFET that packs superior performance and handling into a small DPAK package.
Precision and efficiency come standard in this power MOSFET solution that features split-gate trench technology and RDS(on) of only 11mΩ. Made to withstand harsh automotive environments, this AEC-Q101 qualified component can handle 62A current capability and operating junction temps up to 175⁰C.
The ultra-compact package and ideal handling make this new MOSFET an effective solution for more than just the automotive sector. Engineers can rely on its powerful capabilities for consumer, industrial, and renewable energy applications.
Features & Benefits:
- AEC-Q101 qualification drives confidence
- Split-gate trench (SGT) technology enhances performance
- RDS(on) of only 11mΩ boosts efficiency
- 62A current capability ensures performance
- Compact DPAK package saves space and money
- Junction temperature up to 175℃ for reliability in harsh conditions
Original – Micro Commercial Components
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Ideal Power Inc. announced an agreement with Richardson Electronics, Ltd. (RELL) for the global distribution of Ideal Power’s products including the discrete B-TRAN™ device and SymCool™ power module.
“We are excited to announce Richardson Electronics as the first distributor for our products. They have strong technical sales capability, expertise in demand creation and securing sales for new technologies, robust customer support, and global reach. Our products are a perfect fit for Richardson Electronics’ existing customer base needing medium and high voltage power semiconductors,” said Dan Brdar, President and Chief Executive Officer of Ideal Power.
“We are very excited to work with Ideal Power to bring their products to market worldwide. For years, Richardson has developed an excellent portfolio of Technology Partners for power management components and engineered solutions,” said Greg Peloquin, Executive Vice President and General Manager of Power & Microwave Technologies and Green Energy Solutions groups.
“Ideal Power’s products are an innovative and complementary addition to this portfolio, providing low loss and inherently bidirectional power semiconductors to customers globally for use in a wide variety of industrial applications.”
Ideal Power recently commenced shipment of its SymCool™ power modules to fulfill customer orders. The SymCool™ power module delivers clear advantages for several applications, including solid-state switchgear and circuit protection, renewable energy inverters for solar and wind, industrial inverters, hybrid and electric vehicles (“EVs”), and EV charging.
Ideal Power looks forward to industrial markets, particularly the solid-state circuit breaker market served by our SymCool™ power module, to be the earliest source of our sales ramp beginning in the second half of 2024, as expected.
Ideal Power utilizes an asset-light business model leveraging the large investment already made in the silicon processing, distribution, demand creation and support infrastructure. This business model allows the Company to focus on the further development of its disruptive B-TRAN™ technology while minimizing capital requirements.
Original – Ideal Power
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Infineon Technologies AG filed a lawsuit, through its subsidiary Infineon Technologies Austria AG, against Innoscience (Zhuhai) Technology Company, Ltd., and Innoscience America, Inc. and affiliates. Infineon is seeking permanent injunction for infringement of a United States patent relating to gallium nitride (GaN) technology owned by Infineon.
The patent claims cover core aspects of GaN power semiconductors encompassing innovations that enable the reliability and performance of Infineon’s proprietary GaN devices. The lawsuit was filed in the district court of the Northern District of California.
Infineon alleges that Innoscience infringes the Infineon patent mentioned above by making, using, selling, offering to sell and/or importing into the United States various products, including GaN transistors for numerous applications, within automotive, data centers, solar, motor drives, consumer electronics, and related products used in automotive, industrial, and commercial applications.
“The production of gallium nitride power transistors requires completely new semiconductor designs and processes”, said Adam White, President of Infineon’s Power & Sensor Systems Division. “With nearly two decades of GaN experience, Infineon can guarantee the outstanding quality required for the highest performance in the respective end products. We vigorously protect our intellectual property and thus act in the interest of all customers and end users.”
Infineon has been investing in R&D, product development and the manufacturing expertise related to GaN technology for decades. Infineon continues to defend its intellectual property and protect its investments.
On 24 October 2023, Infineon announced the closing of the acquisition of GaN Systems Inc., becoming a leading GaN power house and further expanding its leading position in power semiconductors.
Infineon leads the industry with its GaN patent portfolio, comprising around 350 patent families. Market analysts expect the GaN revenue for power applications to grow by 49% CAGR to approx. US$2 billion by 2028 (source: Yole, Power SiC and GaN Compound Semiconductor Market Monitor Q4 2023). Gallium nitride is a wide bandgap semiconductor with superior switching performance that allows smaller size, higher efficiency and lower-cost power systems.
Original – Infineon Technologies
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centrotherm international AG published preliminary, unaudited figures for the 2023 financial year in an ad hoc announcement. Accordingly, the Management Board anticipates total operating performance of around EUR 195 million with consolidated revenue of over EUR 150 million, and consequently lower total operating performance than forecast (forecast: EUR 220 million to EUR 260 million).
In contrast, EBITDA is expected to reach the forecast of a positive EBITDA in the low double-digit million range at EUR 19 million. At around EUR 270 million, the Group’s incoming orders will also be within the forecast range of EUR 250 million to EUR 350 million. The order backlog as at December 31, 2023 is expected to total around EUR 540 million.
Based on these positive preliminary business figures for 2023, the Executive Board believes that its strategy has been confirmed overall and has therefore decided today to examine strategic financing options. These options are aimed at further strengthening the company’s financial power in order to accelerate its continued growth and further strengthen its market position.
To this end, investments, particularly in research & development, the expansion of the product portfolio and in the global service network and customer service, are to be significantly increased. The possible financing options to be examined by the Management Board include, in particular, taking on a new strategic investor, carrying out capital increases, raising debt capital and issuing hybrid financial instruments such as convertible bonds or bonds with warrants.
Jan von Schuckmann, CEO of centrotherm international AG: “We are convinced that the potential expansion of our financial leeway can provide a strong new impetus for centrotherm’s future development, and that we can raise our innovative strength and market position to a new level. The timing for this is ideal to set the strategic course for an even stronger centrotherm at an early stage. This is particularly important for the sustainable success of our company and its employees in light of the anticipated global market growth and competitive environment.”
In recent years, centrotherm has successfully established itself as a technology provider and supplier of production solutions to leading manufacturers in both the semiconductor and photovoltaic industries. The product portfolio was significantly expanded as part of the sustainable diversification strategy. As a consequence, centrotherm is now the market leader with its product portfolio for high-temperature processes for silicon carbide wafers.
Its customer base includes leading global manufacturers in the semiconductor industry. The high demand for sensors and microelectronic components that are used in renewable energies, e-mobility and artificial intelligence applications are key drivers of the positive business trend. centrotherm aims to consistently continue its growth, and to exploit the diverse opportunities arising from its core expertise in thermal production solutions to the best possible extent.
Original – centrotherm international
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Micro Commercial Components introduced the latest auto-grade N-channel power MOSFETs with up to 2.5mΩ on-resistance: MCACL220N06YHE3, MCACL2D5N06YL, MCACL280N04YHE3, and MCACL330N04YHE3.
Optimized for high current output, these powerful components boast RDS(on) as low as 0.8mΩ in a sleek, engineer-friendly DFN5060 package. You can enhance power management and ramp up efficiency with minimal losses and the confidence that come along with AEC-Q101 qualification and the MCC name.
With high power density, MCC’s new 40V and 60V MOSFETs are designed to handle harsh conditions and operating junction temps up to 175℃ with ease, making them ideal for diverse automotive and industrial applications — from battery management systems and electric power steering to lighting controls, water pumps, and solar power systems.
Features & Benefits:
- AEC-Q101 qualified for reliability
- Advanced split-gate trench (SGT) technology
- Excellent thermal performance & efficiency
- Low RDS(on) minimizes power losses
- High power density packagey
- High junction temperature up to 175℃
- Compact DFN5060 package saves space and material costs
Original – Micro Commercial Components
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Motor drive applications are taking a leap forward with the launch of the Infineon Technologies AG OptiMOS™ 6 200 V MOSFET product family. The new portfolio is designed to deliver optimal performance in applications such as e-scooters, micro-EVs, and E-forklifts.
The improved conduction losses and switching behavior for these new MOSFETs reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom, energy storage systems (ESS), audio, solar and others.
Additionally, the combination of a wide safe operating area (SOA) and industry-leading R DS(on) results in a perfect fit for static switching applications such as battery management systems. With the introduction of the new OptiMOS 6 200 V product family, Infineon sets a new industry benchmark with increased power density, efficiency, and system reliability for its customers’ benefit.
The OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3.
Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
Original – Infineon Technologies
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Navitas Semiconductor announced its participation in the forthcoming 2024 Asia Charging Expo (ACE) in Shenzhen, China, from March 20th to 22nd, 2024. Visitors will explore the latest advances in GaN and SiC toward a fully-electrified “Planet Navitas” and the transition from fossil fuels.
Navitas will introduce the latest GaNFast™ and GeneSiC™ products to the audience in China for the first time, including: GaNSense™ half-bridge power ICs with application-specific features and higher power ratings, Gen-3 Fast SiC power FETs for high-power and higher-speed performance, and the world’s most protected GaN power devices – GaNSafe™.
Teaming up with UGREEN, Navitas will showcase a variety of UGREEN fast chargers featuring GaNFast power ICs, including the adorable and popular 30W and 65W Nexode Robot chargers, 100W Nexode Magsafe Charger Stand, and high-power 300W Nexode 5-port Desktop Charging Station. Many more GaNFast™ chargers will be displayed for visitors to experience the lightning speed of GaNFast charging.
Ye Hu, Navitas’ Technical Marketing Manager, will deliver a keynote presentation titled “A New Chapter in GaN: Navitas’ Integrated Drive and Loss-less Current Sensing GaNSense™ Half-bridge Solution” as part of the exposition’s World GaN Conference on March 22nd.
ACE 2024 will be held at Hall 6, Futian Convention and Exhibition Center, Shenzhen, China from March 20th to 22nd. Visitors to “Planet Navitas” (booth B57-B60) will meet experienced Navitas engineers to explore the power of next-gen power semiconductors for leading-edge applications. Navitas sales and distribution partners will also provide on-site support.
“The Asia Charging Expo is a critical event in the power electronics industry – gathering key experts from mobile, EV and industrial companies – and we are delighted to be part of it again to present our latest GaN and SiC technology,” said Charles Zha, VP and GM of Navitas China. “Our latest, advanced GaNFast and GeneSiC technologies bring revolutionary fast-charging capabilities to industry-leading Chinese customers.”
Original – Navitas Semiconductor
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Infineon Technologies AG introduced the new CoolSiC™ MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions.
The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the current. It is the first discrete silicon carbide device with a breakdown voltage of 2000 V on the market and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and clearance distance of 5.4 mm. With low switching losses, the devices are ideal for solar (e.g. string inverters) as well as energy storage systems and electric vehicle charging applications.
The CoolSiC MOSFET 2000 V product family is ideally suited for high DC link systems with up to 1500 V DC. Compared to 1700 V SiC MOSFETs, the devices also provide a sufficiently high overvoltage margin for 1500 V DC systems. The CoolSiC MOSFETs deliver a benchmark gate threshold voltage of 4.5 V and are equipped with a robust body diode for hard commutation. Due to the .XT connection technology, the components offer first-class thermal performance. They are also highly resistant to humidity.
In addition to the CoolSiC MOSFETs 2000 V, Infineon will soon be launching the matching CoolSiC diodes: The first launch will be the 2000 V diode portfolio in the TO-247PLUS 4-pin package in the third quarter of 2024, followed by the 2000 V CoolSiC diode portfolio in the TO-247-2 package in the final quarter of 2024. These diodes are particularly suitable for solar applications. A matching gate driver portfolio is also available.
The CoolSiC MOSFET 2000 V product family is available now. In addition, Infineon also offers a suitable evaluation board: the EVAL-COOLSIC-2KVHCC. Developers can use the board as a precise universal test platform to evaluate all CoolSiC MOSFETs and diodes 2000 V and the EiceDRIVER™ Compact Single Channel Isolated Gate Driver 1ED31xx product family through double pulse or continuous PWM operation.
Original – Infineon Technologies
