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Transphorm, Inc. and the global leader in adapter USB Power Delivery (PD) Controller Integrated Circuits (IC) Weltrend Semiconductor Inc. announced availability of two new GaN System-in-Packages (SiPs). When combined with Weltrend’s flagship GaN SiP announced last year, the new devices establish the first SiP product family based on Transphorm’s SuperGaN® platform.
The new SiPs—WT7162RHUG24B and WT7162RHUG24C—integrate Weltrend’s high frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm’s 150 mΩ and 480 mΩ SuperGaN FETs respectively. Like their 240 mΩ predecessor (WT7162RHUG24A), the devices pair with USB PD or programmable power adapter controllers to provide a total adapter solution.
Notably, they also offer several innovative features including the UHV valley tracking charge mode, adaptive OCP compensation, and adaptive green mode control among others that allow customers to design high quality power supplies faster and with fewer components using the simplest design approach.
“When we launched our first GaN SiP last year, it was an important milestone in our company’s evolution. It demonstrated a new GTM strategy for the AC-to-DC power market,” said Wayne Lo, Vice President of Marketing, Weltrend. “Today’s news confirms we’re continuing to serve that space with a wider selection of devices designed to support a wider assortment of product power levels. A total packaged solution with Transphorm’s SuperGaN platform delivers design simplicity with unparalleled performance for devices now ranging from low 30-watt USB-C PD power adapters through to nearly 200-watt chargers, a unique Transphorm GaN capability.”
End product manufacturers seek ways to develop new adapters with a reduced bill-of-materials (BOM) that offer versatility, fast charging, and higher power outputs. Additionally, in many cases they seek to deliver “one-size-fits-all” chargers with multiple ports and/or multiple types of connections. All of this in smaller, lighter weight form factor.
Some key advantages of Transphorm’s normally-off d-mode SuperGaN platform include best-in-class robustness (+/- 20 V gate margin with a 4 V noise immunity) and reliability (< 0.05 FIT) with the ability to increase power density by 50% over silicon. Weltrend’s elegant SiP designs harness those advantages along with its own innovative technologies to create a near plug-and-play solution that speeds design while reducing form factor size.
“SiPs are an important device option when considering the needs of adapter and charger manufacturers,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm. “These systems require effective power conversion that, while simple to use with integrated functionality, also minimize learning curves to ensure quick design in. The first device released validated the performance and versatility of a SuperGaN SiP. The new devices announced today validate both our companies’ deepening commitment to arming customers with choice.”
Key Specifications WT7162RHUG24A WT7162RHUG24B (new) WT7162RHUG24C (new) Rds(on) 240 mΩ 150 mΩ 480 mΩ Vds min 650 V Power Efficiency > 93% Power Density 26 w/in3 Max Frequency 180 kHz Wide Output
Voltage OperationUSB-C PD 3.0
PPS 3.3V~21VPackage 24-pin 8×8 QFN Key Features Feature Advantage Adjustable GaN FET gate slew rate control Balances out efficiency and EMI compliance External VDD linear regulator circuit not required
(700 V ultra HV start-up current pulled directly from AC Line voltage)Reduces component count Reduced package inductance Maximizes chip performance Fits in a standard 8×8 QFN FF Allows for low profile/small system footprint Original – Transphorm
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Toshiba Electronic Devices & Storage Corporation has launched a newly developed press pack IEGT “ST1000GXH35” with ratings of 4500 V/1000 A for use in high-voltage converters such as DC power transmission systems and industrial motor controllers.
The new product ST1000GXH35 employs trench-type IEGT chips and high-speed diode chips. The IEGT chips reduce collector-emitter saturation-voltage and improve shutdown tolerance, short-circuit tolerance, and high-temperature tolerance. Therefore, collector-emitter saturation-voltage (VCE(sat) ) has been reduced by approximately 28 % from 3.00 V to 2.15 V (typical) compared with the existing product ST750GXH24.
The high-speed diode chips suppress voltage oscillation during reverse recovery and improve reverse recovery tolerance and high-temperature tolerance. The new product can be used at a higher turn-on speed than the existing product, therefore the turn-on switching loss (Eon) has been reduced by approximately 34 % from 4.15 J to 2.75 J (typical).
Furthermore, the test voltage for shutdown tests and short-circuit tests has been enhanced to 3400 V in response to applications requiring high voltage. In addition, the junction temperature rating has been increased from 125 °C to 150 °C (maximum) by improving the high-temperature tolerance of the diode.
ST1000GXH35 contributes to size reduction and high output for high-voltage converters such as DC power transmissions, static VAR compensators, and industrial motor controllers.
Applications
- DC power transmissions
- Static VAR compensators
- Industrial motor controllers
Features
- Low collector-emitter saturation voltage and low turn-on switching loss
- Enhanced to test-voltage 3400 V for shutdown and short-circuit tests
- Maximum junction temperature rating: Tj(max)=150 °C
Original – Toshiba
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Texas Instruments Incorporated reported first quarter revenue of $3.66 billion, net income of $1.11 billion and earnings per share of $1.20. Earnings per share included a 10-cent benefit for items that were not in the company’s original guidance.
Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:
- “Revenue decreased 16% from the same quarter a year ago and 10% sequentially, as revenue declined across all end markets.
- “Our cash flow from operations of $6.3 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $940 million.
- “Over the past 12 months we invested $3.7 billion in R&D and SG&A, invested $5.3 billion in capital expenditures and returned $4.8 billion to owners.
- “TI’s second quarter outlook is for revenue in the range of $3.65 billion to $3.95 billion and earnings per share between $1.05 and $1.25. We continue to expect our effective tax rate to be about 13%.”
Free cash flow, a non-GAAP financial measure, is cash flow from operations less capital expenditures.
Earnings summary
(In millions, except per-share amounts) Q1 2024 Q1 2023 Change Revenue $ 3,661 $ 4,379 (16) % Operating profit $ 1,286 $ 1,934 (34) % Net income $ 1,105 $ 1,708 (35) % Earnings per share $ 1.20 $ 1.85 (35) % Cash generation
Trailing 12 Months (In millions) Q1 2024 Q1 2024 Q1 2023 Change Cash flow from operations $ 1,017 $ 6,277 $ 7,736 (19) % Capital expenditures $ 1,248 $ 5,337 $ 3,336 60 % Free cash flow $ (231) $ 940 $ 4,400 (79) % Free cash flow % of revenue 5.6 % 22.6 % Cash return
Trailing 12 Months (In millions) Q1 2024 Q1 2024 Q1 2023 Change Dividends paid $ 1,183 $ 4,615 $ 4,359 6 % Stock repurchases $ 3 $ 193 $ 3,129 (94) % Total cash returned $ 1,186 $ 4,808 $ 7,488 (36) % Original – Texas Instruments
