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Efficient Power Conversion Corp (“EPC”) announced that the China National Intellectual Property Administration (“CNIPA”) has validated the claims of EPC patent titled “Compensated gate MISFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.
The decision on April 30, 2024 follows an April 2, 2024 announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).
Compared with traditional silicon-based power devices, GaN technology represents a transformational leap with higher efficiency, faster switching speeds and smaller size. GaN devices are used in artificial intelligence servers, self-driving vehicles, next-generation rapid chargers, drones, e-bikes, and humanoid robots, among other applications. Chinese Patent No. ZL201080015425.X covers the fundamental design and configuration of EPC’s proprietary enhancement mode GaN field effect transistors (FETs) with reduced gate leakage. Most industry participants employ the GaN gate technology covered by this patent.
“These are two of the foundational patents supporting our broad portfolio of innovations, and we are pleased that the CNIPA has again confirmed the validity of our valuable intellectual property,” said Alex Lidow, CEO and Co-founder of EPC. “Quick, fair and efficient decisions such as these reinforce the confidence in legal systems that companies need to operate globally.”
In May 2023, EPC filed complaints in the U.S. federal court in Los Angeles and in the U.S. International Trade Commission, asserting that Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates infringe patents of its foundational patent portfolio, which include the U.S. counterparts of EPC’s Chinese Patent Nos. ZL201080015425.X and ZL201080015388.2. In response, Innoscience had petitioned the CNIPA to invalidate the two Chinese patents.
Original – Efficient Power Conversion
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Infineon Technologies AG will provide silicon carbide (SiC) power modules HybridPACK™ Drive G2 CoolSiC™ and bare die products to Xiaomi EV for its recently announced SU7 until 2027. Infineon’s CoolSiC-based power modules allow for higher operating temperatures, resulting in best-in-class performance, driving dynamics and lifetime.
Traction inverters based on the technology can, for example, further increase electric vehicle range. The HybridPACK Drive is Infineon’s market-leading power module family for electric vehicles, with almost 8.5 million units sold since 2017.
Infineon provides two HybridPACK Drive G2 CoolSiC 1200 V modules for the Xiaomi SU7 Max. In addition, Infineon supplies Xiaomi EV with a broad range of products per car, including, for example, EiceDRIVER TM gate drivers and more than ten microcontrollers in various applications. The two companies also agreed to further cooperate on SiC automotive applications to fully utilize the benefits of Infineon’s SiC portfolio.
Zhenyu Huang, Vice President of Xiaomi EV and General Manager of the Supply Chain Department, said: “Infineon is an important partner with leading technologies and resilient manufacturing capabilities in power semiconductors as well as a highly scalable microcontroller product portfolio. The cooperation between the two companies will not only help stabilize the supply of silicon carbide for Xiaomi EV, but also help us build a high-performance, safe and reliable luxury car with leading-edge features for our customers.”
Peter Schiefer, President of Infineon’s Automotive division, said: “We are very pleased to work with dynamic players such as Xiaomi EV and provide them with silicon carbide products designed to enhance the performance of electric cars even further. As the leading partner to the automotive industry, we are well positioned with our broad product portfolio, system understanding and multi-site manufacturing base to shape the mobility of the future.”
This collaboration contributes to Infineon’s position as the number one partner of the global automotive industry. According to the latest data from TechInsights, Infineon is the largest semiconductor supplier to the automotive industry. In addition to its number one position in automotive power semiconductors, Infineon also took the lead in the field of automotive microcontrollers last year.
Original – Infineon Technologies
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Nexperia announced its financial results for 2023, including strong growth in its key market segment automotive as well as increased R&D investments. With a total revenue of US$2.15bn, (US$2.36bn in 2022) Nexperia’s financial performance also reflects a challenging year for the semiconductor industry. Despite the slight decline in revenue and weak market demand, the product revenue in the traditionally strong automotive segment grew significantly.
In 2023, Nexperia had, in many ways, a strong focus on the green energy transition. For one, the company solidified its dedication to environmental, social, and governance (ESG) principles with the release of its inaugural ESG report. Another milestone was that Nexperia secured its first $800 million Senior Sustainability-Linked Loan (SLL), directly supporting its aim of achieving carbon neutrality by 2035 for scope 1 and 2 emissions. Additionally, in April 2024, Nexperia was awarded a Gold Medal by EcoVadis, placing it in the top 5% of assessed companies within its industry, reaffirming its commitment to driving positive industry change.
Moreover, the introduction of industry-leading wide-bandgap semiconductors, energy harvesting devices, and the continuous investments in its power semiconductors, ensure improved efficiency of technologies that shape a greener future. The longer-term outlook remains strongly positive given the essential role of semiconductors in the global megatrends of electrification, digitalization, automation, and green energy transition. Despite facing cyclical effects, Nexperia remains steadfast in its commitment to innovation, leveraging its 70-year semiconductor heritage.
“2023 marked a significant investment year for Nexperia, towards upgrading and expanding our product portfolio in Power Discretes, Modules, Analog & Power ICs. This investment represents 13% of our revenue, aligning us with industry standards and emphasizes our commitment to long term growth. Looking ahead to 2024, while uncertainties persist in Europe and North America, we are encouraged by increasing demand levels in Asia. Despite market fluctuations, we remain dedicated to delivering value to our stakeholders.” – Stefan Tilger, CFO, Nexperia
“TeamNexperia has shown remarkable resilience in navigating the challenges of the past year, reaffirming the underlying strength and progress of our company. Despite the challenges, we remain committed to investment and innovation, laying the groundwork for a promising future. Together, we are poised to seize the vast opportunities ahead” – Wing Zhang, CEO, Nexperia.
Original – Nexperia
