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GlobalFoundries Inc. (GF) announced preliminary financial results for the first quarter ended March 31, 2024.
Key First Quarter Financial Highlights
- Revenue of $1.549 billion
- Gross margin of 25.4% and Non-IFRS gross margin of 26.1%
- Operating margin of 9.5% and Non-IFRS operating margin of 12.1%
- Net income of $134 million and Non-IFRS net income of $174 million
- Non-IFRS EBITDA of $577 million
- Cash, cash equivalents and marketable securities of $4.2 billion
“In the first quarter, GF’s dedicated teams across the world delivered financial results that exceeded the high end of the guidance ranges we provided in our February earnings release,” said Dr. Thomas Caulfield, president and CEO of GF. “As pockets of the semiconductor industry begin to emerge from the inventory correction, our teams are driving foundry innovation and differentiation for our customers across their essential end-markets. We are delighted with the awards from both the U.S. Department of Commerce and New York State to expand our manufacturing capability in the United States, which will complement our unique global capacity offering.”
Recent Business Highlights
- As part of the U.S. CHIPS and Science Act, the U.S. Department of Commerce announced $1.5 billion in planned direct funding for GF’s New York and Vermont facilities. The proposed funding will support expansion and technology diversification, enabling secure capacity for automotive, aerospace and defense and other key markets.
- In addition, New York State announced over $600 million in planned funding under the New York State Green CHIPS and other state benefits for GF’s two Malta, New York projects.
- GF is furthering its commitment to sustainable operations and fighting climate change with the announcement of two new long-term goals to achieve net-zero greenhouse gas emissions and 100% carbon neutral power by 2050. The new 2050 goals are aligned with Paris Agreement goals and build upon GF’s Journey to Zero Carbon pledge in 2021.
Original – GlobalFoundries
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Littelfuse, Inc. announced the launch of the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This innovative driver is specifically designed to drive Silicon Carbide (SiC) MOSFETs and high-power Insulated Gate Bipolar Transistors (IGBTs) in industrial applications.
The key differentiator of the IX4352NE lies in its separate 9 A source and sink outputs, which enable tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator also provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. With an operating voltage range (VDD – VSS) of up to 35 V, this driver offers exceptional flexibility and performance.
One of the standout features of the IX4352NE is its internal negative charge pump regulator, which eliminates the need for an external auxiliary power supply or DC/DC converter. This feature is particularly valuable for turning off SiC MOSFETs, saving valuable space typically required for external logic level translator circuitry. The logic input’s compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities.
The IX4352NE is ideally suited for driving SiC MOSFETs in various industrial applications such as:
- on-board and off-board chargers,
- Power Factor Correction (PFC),
- DC/DC converters,
- motor controllers, and
- industrial power inverters.
It’s superior performance makes it ideal for demanding power electronics applications in the electric vehicle, industrial, alternate energy, smart home, and building automation markets.
With its comprehensive features, the IX4352NE simplifies circuit design and offers a higher level of integration. Built-in protection features such as desaturation detection (DESAT) with soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD) ensure the protection of the power device and the gate driver. The integrated open-drain FAULT output signals a fault condition to the microcontroller, enhancing safety and reliability. Furthermore, the IX4352NE saves valuable PCB space and increases circuit density, contributing to overall system efficiency.
Notable improvements over the existing IX4351NE include:
- A safe DESAT-initiated soft turn-off.
- A thermal shutdown with high threshold accuracy.
- The charge pump’s ability to operate during thermal shutdown.
The new IX4352NE is pin-compatible, allowing for a seamless drop-in replacement in designs that specify the existing Littelfuse IX4351NE, which was released in 2020.
“The IX4352NE extends our broad range of low-side gate drivers with a new 9 A sink/source driver, simplifying the gate drive circuitry needed for SiC MOSFETs,” commented June Zhang, Product Manager, Integrated Circuits Division (SBU) at Littelfuse. “Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage for improved dV/dt immunity and faster turn-off. As a result, it can be used to drive any SiC MOSFET or power IGBT, whether it is a Littelfuse device or any other similar component available on the market.”
Original – Littelfuse
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DACO Semiconductor has developed new platforms of Power MOSFET products called Standard HV Power MOSFETs and High Performance HV Power MOSFETs that cover 900V and 1200V range. Those HV MOSFETs are designed with a proprietary chip design and undergo process improvements that dramatically enhance the power handling capability and system efficiency.
High Performance HV Power MOSFETs product family integrates a faster body diode which reverse recovery time (trr) is reduced to suite phase-shift bridge motor control and uninterruptible power supply applications (UPS).
Both standard HV Power MOSFETs and High Performance HV Power MOSFETs include a wide product line and bring the benefits of enhanced performance and cost-effectiveness to key market applications in the mid-voltage range.
Example applications are offline switch-mode power supplies of all sizes, UPS and telecommunication applications. DACO Semiconductor offers a superior market standard SOT-227 and HB-9434 (34mm) packages. Others packages like discrete TO-247 and 62mm modules are under development.
Features:
- International Standard Packages
- Dynamic dv/dt Rating
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low reverse recovery time trr
Applications:
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Battery Chargers
- UPS
- AC Motor Drives
- High Speed Power Switching Applications
Original – DACO Semiconductor
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Infineon Technologies AG reported the results for the second quarter of the 2024 fiscal year (period ended 31 March 2024).
- Q2 FY 2024: Revenue €3.632 billion, Segment Result €707 million, Segment Result Margin 19.5 percent
- Outlook for FY 2024: Based on an assumed exchange rate of US$1.10 to the euro, Infineon now expects to generate revenue of around €15.1 billion plus or minus €400 million (previously €16 billion plus or minus €500 million), with a Segment Result Margin of around 20 percent (previously in the low to mid-twenties percentage range) at the mid-point of the guided revenue range. Adjusted gross margin will be in the low-forties percentage range (previously in the low to mid-forties percentage range). Investments are planned at around €2.8 (previously around 2.9 billion). Adjusted Free Cash Flow of about €1.6 billion (previously €1.8 billion) and reported Free Cash Flow of about €0 million (previously about €200 million) are now expected
- Outlook for Q3 FY 2024: Based on an assumed exchange rate of US$1.10 to the euro, revenue of around €3.8 billion expected. On this basis, the Segment Result Margin is forecast to be in the high-teens percentage range
„In the prevailing difficult market environment, Infineon delivered a solid second quarter”, says Jochen Hanebeck, CEO of Infineon. “Many end markets have remained weak due to economic conditions, while customers and distributors have continued to reduce semiconductor inventory levels. Weak demand for consumer applications persists. There has also been a noticeable deceleration in growth in the automotive sector. We are therefore taking a cautious approach to the outlook for the rest of the fiscal year and are lowering our forecast. In the medium to long term, decarbonization and digitalization will continue to be strong structural drivers of our profitable growth. In order to realize the full potential of our Company, we will further strengthen our competitiveness. To this end, we are launching the company-wide “Step Up” program. We are aiming to achieve structural improvements in our Segment Result in the high triple-digit million euro range per year.”
For the full version of this news release (incl. financial data), please download the PDF version.
Original – Infineon Technologies
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Ideal Power Inc. announced a global leader in circuit protection, industrial fuses and power conversion electronics with over a billion in annual sales entered into an agreement with Ideal Power to test and evaluate B-TRAN™ power semiconductors for circuit protection in industrial markets including industrial fuses, renewable energy and energy storage power conversion, rail/transportation, and electric vehicle (“EV”) power management.
“We are excited to collaborate with a global leader in circuit protection, industrial fuses and power conversion technology interested in B-TRAN™ as an enabling technology,” said Dan Brdar, President and Chief Executive Officer of Ideal Power. “This global supplier presents multiple opportunities for us as they address several of our target markets. We look forward to gathering their feedback on their application-specific requirements to drive our product roadmap and to potentially secure design wins and/or a customer development agreement with them.”
Circuit protection is required for renewable energy grid interfaces and EV power connections. B-TRAN™ technology has clear advantages in applications including EV power transfer, DC microgrids, energy storage systems and railway substations. These applications require fast-acting circuit protection to minimize electrical faults. In addition, B-TRAN™-based circuit protection also provides dramatically lower conduction losses and bidirectional capability thereby enabling greater efficiency while simultaneously lowering component count and system costs.
Ideal Power’s patented semiconductor power switch, B-TRAN™, can reduce power losses by 50% or more over conventional power switches, depending on the application. B-TRAN™’s higher efficiency results in less heat being generated and therefore significantly lower thermal management requirements, requiring significantly smaller surface area to dissipate heat and giving rise to potentially smaller original equipment manufacturer products. B-TRAN™ offers the industry’s only symmetric bidirectional operation, reducing the number of components required for an application by 75% compared to a conventional bidirectional switch utilizing IGBTs and diodes.
This highly efficient and unique symmetric operation provides a strong competitive advantage in bidirectional applications, which are growing rapidly as transportation electrifies and power generation shifts to renewable energy coupled with energy storage. For more information on B-TRAN™, visit here.
Ideal Power plans to continue adding potential customers to the test and evaluation program. The program is expected to remain an embedded process in the Company’s sales and marketing effort and a source of input for its next generation of products. The Company’s outreach continues to generate significant new interest resulting in inquiries from potential customers about B-TRAN™, the SymCool™ power module, the SymCool™ IQ intelligent power module and participation in the test and evaluation program.
Original – Ideal Power
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Power Integrations announced an agreement to acquire the assets of Odyssey Semiconductor Technologies, a developer of vertical gallium-nitride (GaN) transistor technology. The transaction is expected to close in July 2024, after which all key Odyssey employees are expected to join Power Integrations’ technology organization.
The acquisition supports the company’s ongoing development roadmap for its proprietary PowiGaN™ technology, which is featured in many of the company’s product families including InnoSwitch™ ICs, HiperPFS™-5 power-factor-correction ICs and the recently launched InnoMux™-2 family of single-stage, multiple-output ICs. The company introduced 900- and 1250-volt versions of PowiGaN technology and products in 2023.
Commented Dr. Radu Barsan, Power Integrations’ vice president of technology: “Power Integrations has been at the forefront of GaN development and commercialization since we began shipping products with PowiGaN technology in 2018. We are executing on an ambitious roadmap that includes driving toward cost parity with silicon MOSFETs and expanding the voltage and power capabilities of PowiGaN.
Our goal is to commercialize a cost-effective high-current and high-voltage GaN technology to support higher-power applications currently served by silicon carbide (SiC), at a much lower cost and higher performance enabled by the fundamental material advantages of GaN over SiC. The experience of the Odyssey team in high-current vertical GaN will augment and accelerate these efforts, and we are delighted to add them to our team.”
Added Dr. Richard Brown, Odyssey co-founder and CEO: “The Odyssey team and I are excited to join Power Integrations in accelerating their GaN technology roadmap. As the first company to commercialize high-voltage GaN, Power Integrations continues to lead the industry in driving the technology forward in terms of cost, voltage and current, as well as the design of system-level products that take full advantage of the capabilities of GaN.”
Original – Power Integrations
