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Power Integrations announced the launch of the SCALE-iFlex™ XLT family of dual-channel plug-and-play gate drivers for operation of single LV100 (Mitsubishi), XHP™ 2 (Infineon), HPnC (Fuji Electric) and equivalent semiconductor modules up to 2300 V blocking voltage for wind, energy storage and solar renewable energy installations.
This single-board driver enables active thermal management of inverter modules for improved system utilization and reduces the bill-of-material count for increased reliability.
Thorsten Schmidt, product marketing manager at Power Integrations commented: “It’s a real challenge to build a single-board gate driver for these ‘new dual’ style IGBT modules. Our compact new SCALE-iFlex XLT gate drivers fit inside the outline of the module, allowing the drivers to be mounted on the module, which gives converter system designers a high degree of mechanical design freedom.”
SCALE-iFlex XLT dual-channel gate drivers feature Negative Temperature Coefficient (NTC) data reporting – an isolated temperature measurement of the power module – which allows accurate thermal management of converter systems. This enables system designers to optimize thermal design and obtain a 25 to 30 percent converter power increase from the same hardware.
The isolated NTC readout also reduces hardware complexity, eliminating multiple cables, connectors and additional isolation barrier crossing circuits. The new gate drivers employ Power Integrations’ SCALE-2 chip set which minimizes component count, enhancing reliability. The gate driver board also protects the power switches in the event of a short-circuit.
Original – Power Integrations
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GlobalFoundries announced a partnership with Micron Technology, Inc. and the U.S. National Science Foundation (NSF) to invest in workforce development at Minority Serving Institutions (MSI) to help meet the growing workforce needs of the U.S. semiconductor ecosystem.
In partnership with Micron and the NSF, the investment will support semiconductor workforce development at Historically Black College and Universities, Hispanic Serving Institutions, Asian American Native American Pacific Islander-Serving Institutions and Tribal Colleges and Universities throughout the U.S. These investments aim to diversify the semiconductor workforce and build robust talent pathways through education and career reentry initiatives.
The companies’ and NSF ’s support of U.S. MSIs is directly aligned with the workforce development objectives of the federal CHIPS and Science Act as well as New York State’s Green Chips legislation, to ensure a robust pipeline of U.S. semiconductor talent.
“As an industry, we must work together to collectively address the great need for a robust, diverse pipeline of talented individuals who will be the semiconductor innovators and leaders of tomorrow,” said Pradheepa Raman, chief people officer of GF. “Strong public-private partnerships, like our collaboration with Micron and NSF to support Minority Serving Institutions, are critical to continue the work of inspiring and developing the skilled workforce our industry needs to grow.”
“Partnering with leaders in industry, government and education to meet the needs of a growing semiconductor workforce in the U.S. is an essential part of nurturing the talent necessary to fill key openings in the semiconductor industry,” said Erwin Gianchandani, NSF assistant director for Technology, Innovation and Partnerships. “We look forward to collaborating with our partners to increase access to equitable education, address student programming and teacher and faculty professional development and strengthen infrastructure through future funding opportunities.”
“Micron’s investments in U.S. expansion are about much more than building fabs. We’re investing in people and in partnerships to expose learners from every background to opportunities they may not otherwise have without support,” said April Arnzen, executive vice president and chief people officer at Micron and president of the Micron Foundation. “We’re honored to see initiatives like Micron’s MSI Semiconductor Network, which are at the forefront of our industry’s efforts to prepare the semiconductor workforce and research ecosystem to meet growing demand for talent, recognized by government leaders in the U.S. and globally.”
“Micron’s and GlobalFoundries’ historic investments are transformative for Upstate New York and the nation, and today’s announcement will put in place another critical workforce development initiative to deliver the workers needed to fill the tens of thousands of new jobs that will be created. This initiative will especially focus on connecting underserved and historically marginalized New Yorkers and others around the country to new job opportunities in the semiconductor industry, including to build chips in Upstate NY,” said Senate Majority Leader Chuck Schumer.
“In recent weeks, my CHIPS & Science Law delivered a whopping $6.1 billion for Micron to build their mega-fab project and another $1.5 billion for GlobalFoundries’ expansion. Now, Micron and GlobalFoundries are working to develop a workforce pipeline to train and attract the next generation of talent, putting students from our top-notch educational institutions into jobs in the semiconductor industry. I am glad this initiative is supported by National Science Foundation funds from my CHIPS & Science Law, which serves as the fuel for major investments like Micron’s and GlobalFoundries’ to bring chip manufacturing back to America and helping our future scientists and engineers reach new heights with good-paying jobs right at their doorstep.”
“We are excited about the opportunities to grow efforts with GlobalFoundries that have led to increased summer internships and experiences at GF’s Malta, NY, facility for students at multiple CUNY schools including LaGuardia, Queensborough and City Tech,” said Tavis Ezell, director of business development for The City University of New York’s (CUNY) Advanced Science Research Center (ASRC). “With our industry partners, we are identifying the necessary skills needed to support jobs across the vast semiconductor ecosystem and bolster current curricula across a wide range of CUNY degrees, connecting interested students to training opportunities, whether their first internship experience is at the ASRC, or at an industry partner such as GlobalFoundries.”
GF’s support of MSIs is the company’s latest effort to build a critical talent pipeline for a current and future workforce. In November 2023, the company announced a new student loan repayment program to help U.S.-based employees and eligible new recruits pay up to $28,500 in student loan debt, tax-free, to help ease the financial burden of higher education and training. GF also offers tuition reimbursement for employees pursuing undergraduate and graduate degrees, fully paid parental leave, employee fitness stipend to promote good health and childcare subsidy towards dependent care. GF’s first-of-its-kind apprenticeship program provides opportunities for individuals with no prior experience or training in the semiconductor industry, offering full-time paid positions and cost-free college courses to high school graduates.
GF has established strategic partnerships nationwide with top universities and strong regional engagements with community colleges in New York and Vermont as well as access to worldwide talent through its global footprint to help build a diverse workforce and semiconductor talent pipeline. To help inspire younger children, GF has a robust STEM outreach program to engage with regional middle schools and high schools, including Early College High School and Career and Technical Education programs, to bring industry awareness and hands-on experiences to students.
Original – GlobalFoundries
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Navitas Semiconductor invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11th-13th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW.
Aligned with Navitas’ mission to “Electrify Our World™”, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for fully-electrified EV transportation, AI data centers, industrial compressors, drives, and robotics plus renewable energy sourcing and storage.
Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO2 by 2050.
“PCIM is a key event in the power-electronics calendar,” says Alessandro Squeri, Navitas’ senior director for European sales. “Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerate customer time-to-market with sustainable performance advantages. ‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6B identified customer pipeline as part of a vast $22B/year market opportunity.”
Major technology updates and releases include GaNSafe™ – the world’s most-protected, most reliable, and highest-performance GaN power, Gen-4 GaNSense™ Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs – for game-changing motor drive and energy-storage applications.
In addition to the exhibition, PCIM 2024 includes peer-review technical presentations, including:
11th June, 13:00 – 14:30, Hall 10.1
- “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
- A low-cost 300 W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270 cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC-DC stage, and a synchronous rectification output stage. The design includes GaN Power ICs and off-the-shelf controllers running at 300 kHz. This new design has resulted in a cased power density of 1.1 W/cc.
12th June, 15:30 – 17:00, Foyer
- Evaluation of SiC Devices for Over 500 kHz Application Based on Buck Circuit – Minli Jia, Sr. Staff Applications Engineer, Navitas Semiconductor
- This paper selects three 1200 V SiC devices of similar specifications and different manufacturers for analysis and experimental research and designs a Buck converter with an output power of 3.6 kW and a switching frequency of 600 kHz. The efficiency and heat of three SiC types were tested under the same working conditions, and the results showed that the SiC with fast turn-off characteristics and low thermal resistance was more suitable for high-frequency converter applications.
Original – Navitas Semiconductor
- “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”– Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
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Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSFETs in 3 and 4-pin TO-247 packaging and is the latest offering in a series which will see its SiC MOSFET portfolio swiftly expand to include devices with RDSon values of 17, 30, 40, 60 and 80 mΩ in flexible package options.
With the release of the NSF0xx120D7A0, Nexperia is addressing the growing market demand for high performance SiC switches in SMD packages like D2PAK-7, which is becoming increasingly popular in various industrial applications including electric vehicle (EV) charging (charge pile, offboard charging), uninterruptible power supplies (UPS) and inverters for solar and energy storage systems (ESS).
It is also further testimony to Nexperia’s successful strategic partnership with Mitsubishi Electric Corporation (MELCO), which has seen the two companies join forces to push the energy efficiency and electrical performance of SiC wide bandgap semiconductors to the next level, while additionally future-proofing production capacity for this technology in response to ever growing market demand.
RDSon is a critical performance parameter for SiC MOSFETs because it impacts conduction power losses. However, many manufacturers concentrate on the nominal value, neglecting the fact that it can increase by more than 100% as device operating temperatures rise, resulting in considerable conduction losses.
Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and leveraged the features of its innovative process technology to ensure that its new SiC MOSFETs offer industry-leading temperature stability, with the nominal value of RDSon increasing by only 38% over an operating temperature range from 25 °C to 175 °C.
Tightest threshold voltage, VGS(th) specification, allows these discrete MOSFETs to offer balanced current-carrying performance when connected in parallel. Furthermore, low body diode forward voltage (VSD) is a parameter which increases device robustness and efficiency, while also relaxing the dead-time requirement during freewheeling operation.
Original – Nexperia
