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Cambridge GaN Devices (CGD) announced two new packages for the company’s ICeGaN™ family of GaN power ICs that offer enhanced thermal performance and simplify inspection. Variants of the well-proven DFN style, both packages are extremely rugged and reliable.
Developed for CGD, the DHDFN-9-1 (Dual Heat-spreader DFN) is a thin, dual-side cooled package with a small, 10×10 mm footprint and wettable flanks to simplify optical inspection. It offers low thermal resistance (Rth(JC), and can be operated with bottom-side, top-side and dual-side cooling, offering flexibility in design and out-performing the often-used TOLT package in top-side and, especially, dual-side cooled configurations.
The DHDFN-9-1 package has been designed with dual-gate pinout to facilitate optimal PCB layout and simple paralleling, enabling customers to address applications up to 6 kW with ease. The BHDFN-9-1 (Bottom Heat-spreader DFN) is a bottom-side cooled package, also with wettable flanks for easy inspection. Thermal resistance is 0.28 K/W, matching or exceeding other leading devices. Measuring 10×10 mm, the BHDFN is smaller than the commonly-used TOLL package yet shares a similar footprint, hence a common layout with TOLL-packaged GaN power ICs is possible for ease of use and evaluation.
Nare Gabrielyan | Product Marketing Manager, CGD
“These new packages are part of our strategy to enable customers to use our ICeGaN GaN power ICs at higher power levels. Servers, data centres, inverters/motor drives, micro-inverters and other industrial applications are all beginning to enjoy the power density and efficiency benefits that GaN brings, but they are also more demanding. Therefore, it is essential for such applications that devices are also rugged and reliable, and easy to design in. These attributes are inherent in ICeGaN, and are supported and extended by the new packages.”
Improving thermal resistance performance has several benefits. First, more power output is available at the same RDS(on) . Devices also run at cooler temperatures for the same power, so less heatsinking is required, resulting in reduced system costs. Lower operating temperatures also lead to higher reliability and longer lifetimes. Finally, if cost is the constraint for the application, designers can use a lower cost part with a higher RDS(on) and still achieve the required power output.
The new packages will be shown for the first time publicly at the upcoming PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Original – Cambridge GaN Devices
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NXP Semiconductors N.V. announced a collaboration with ZF Friedrichshafen AG, a global leader in e-mobility, on next-generation SiC-based traction inverter solutions for electric vehicles (EVs). By leveraging NXP’s advanced GD316x high-voltage (HV) isolated gate drivers, the solutions are designed to accelerate the adoption of 800-V and SiC power devices. Safe, efficient and higher performance traction inverters enabled by the GD316x product family can be designed to extend EV range and reduce the number of charging stops while lowering system level costs for OEMs.
The collaboration between ZF and NXP is a significant step towards accelerating the electrification of the automotive industry, and creating more safe, sustainable, and energy-efficient EVs for the future.
“We look forward to working with NXP to raise the bar for the capabilities and performance of our 800-V traction inverter solutions, which will help us achieve our goals of reducing emissions and promoting sustainability,” said Dr. Carsten Götte, SVP Electrified Powertrain Technology at ZF. “The combination of ZF’s expertise in motor control and power electronics with NXP’s GD316x gate driver family enables us to provide our latest SiC-based traction inverters with higher power and volume density, efficiency and differentiation, and provide our customers with significant safety, efficiency, range and performance improvements.”
Traction inverters are a critical component of an EV’s electric powertrain, converting DC voltage from the battery into a time-varying AC voltage, which drives the vehicle’s motor. As traction inverters now migrate to SiC-based designs, the SiC power devices need to be paired with HV isolated gate drivers to harness the advantages such as higher switching frequency, lower conduction losses, better thermal characteristics and higher robustness at high voltages, compared to previous generation silicon-based IGBT and MOSFET power switches.
The GD316x family of advanced, functionally safe, isolated, high voltage gate drivers incorporates a number of programmable control, diagnostic, monitoring, and protection features, enhanced to drive the latest SiC power modules for automotive traction inverter applications. Its high level of integration allows a smaller footprint and simplifies the system design.
The outstanding capabilities reduce Electromagnetic Compatibility (EMC) noise while also reducing switching energy losses for better efficiency. Fast short-circuit protection times (< 1 µsec) in combination with powerful and programmable gate drive schemes optimize the performance of the traction inverter’s SiC power modules.
“Together with ZF, we are developing next-generation power electronics for future EVs,” said Robert Li, Senior Vice President and General Manager, Electrification at NXP. “Our gate driver family implements a number of outstanding features to both protect and unleash the benefits of high-voltage SiC power switches, making them an ideal choice for ZF’s new SiC-based traction inverter solutions. This collaboration is a testament to our commitment to delivering state-of-the-art solutions that enable OEMs to achieve their EV performance and sustainability goals.”
ZF traction inverters, enabled by NXP’s GD316x product family, are already on the road.
Original – NXP Semiconductors
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STMicroelectronics and Geely Auto Group have signed a long-term Silicon Carbide (SiC) supply agreement to accelerate their existing cooperation on SiC devices. Under the terms of this multi-year contract, ST will provide multiple Geely Auto brands with SiC power devices for mid-to-high-end battery electric vehicles (BEVs), boosting Geely Auto’s NEV transformation strategy with improved performance, faster charging speeds and extended driving range.
In addition, building on their longstanding cooperation across multiple automotive applications, Geely and ST have established a joint lab to exchange information and explore innovative solutions related to automotive Electronics/Electrical (E/E) architectures (i.e. in-vehicle infotainment, smart cockpit systems), advanced driver assistance (ADAS), and NEVs.
Geely Auto Group has adopted ST’s third generation SiC MOSFET devices in electric traction inverters. The traction inverter is the core of electric powertrains and SiC MOSFETs maximize their efficiency. The combination of advanced inverter design with high-efficiency power semiconductors, like SiC, is the key to superior electric vehicle performance.
“We are very pleased to establish a win-win cooperation with STMicroelectronics, to empower each other and fully utilize our respective advantages and resources.I believe that through the form of innovation joint lab, Geely and ST can deepen our cooperation, achieve mutual benefit, and accelerate the development and implementation of innovative technologies in Geely Auto,” said Li Chuanhai, President of Electronic and Electrical Center of Geely Automotive Central Research Institute.
“We are pleased to have a deep cooperation with global automotive semiconductor leader STMicroelectronics to establish an innovation joint lab. Both sides will deepen long-term cooperation in fields such as smart driving to jointly focus on customer needs, accelerate the implementation of new products and solutions, and shape an efficient cooperation mode. I believe that this cooperation will be beneficial for both parties to conduct more forward-looking technical research based on the development trends of smart, electrified, and connected cars. Geely is delighted to leverage STMicroelectronics’ leading automotive business solutions to be well positioned in product performance, system integration, and overall market competitiveness,” said Fu Zhaohui, Director of the Electronic and Electrical Center of Geely Automotive Central Research Institute.
“Geely Auto, is a shining example of automotive innovation in China, making rapid progress in car electrification and digitalization, while expanding its presence in the global market. This long-term SiC supply agreement and the joint lab establishment mark a significant step forward in our long-established cooperation,” said Henry Cao, Executive Vice President of Sales & Marketing, China Region, STMicroelectronics. “China is the biggest NEV market worldwide and a leading innovator. Our local competence centers and joint labs with our customers across the value chain of automotive allow ST to better support automotive innovation and transformation in China.”
As a leading global automobile manufacturer and China’s top automotive brand, Geely Auto sold a total of 1.68 million vehicles in 2023, with NEV sales reaching 480,000 units, accounting for 28% of the Company’s total sales for the year. This NEV sales volume represents a year-over-year increase of 48%, demonstrating Geely Auto’s successful transition towards NEV and its growing impact in the industry.
With a state-of-the-art SiC manufacturing process and a completely vertically integrated supply-chain, ST provides SiC devices for a wide range of EV applications including traction inverter, OBC (onboard charger), DC-DC converter, EV charging station and e-compressor application, significantly enhancing the performance, efficiency, and range of NEVs. In June 2023, ST and Sanan Optoelectronics, a market leader in compound semiconductors in China, announced the creation of a new 200mm SiC device manufacturing JV in Chongqing, China. This facility will better support the needs of Chinese customers as ST collaborates with more leading Chinese carmakers, industrial customers, and solution providers in SiC, to accelerate the pace of electrification in China.
Original – STMicroelectronics
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Qorvo® will showcase its latest power management innovations at the upcoming PCIM exhibition and conference from June 11-13 in Nuremberg, Germany. Attendees are invited to visit the Qorvo booth #7-406 to explore the latest advancements in SPICE simulation, silicon carbide (SiC) and motor control technologies.
Qorvo will feature the following at PCIM 2024:
QSPICE™ Simulation Software Showcase
PCIM attendees can experience the next level of simulation with Qorvo’s advanced QSPICE tool during small group Q&A with the tool’s creator, Mike Engelhardt.Training Session Schedule (visit Qorvo booth to confirm training session times)
• Tuesday, June 11, 1:30 p.m.: The QSPICE User Interface
• Wednesday, June 12, 1:30 p.m.: Importing 3rd Party Models
• Thursday, June 13, 10:30 a.m.: Anatomy of a Macro Model Done RightSiC Solutions
Qorvo’s unique cascode JFET configuration delivers industry-leading RDS(on) and best-in-class switching frequency in multi-kilowatt SiC applications across automotive, industrial, renewables and network infrastructure markets. Experts will be on hand to discuss the latest advancements with SiC JFETs, modules and FETs.
Motor Control Solutions
Qorvo’s booth will feature a variety of intelligent motor control solutions that span the input voltage spectrum, including:
• New family of 44V-72V motor controllers with integrated protection features for safety-critical applications like power tools and garden tools
• Robotics demo with partner Tinymvr featuring both Qorvo motor control and battery management solutions
• Wide bandgap showcase with both Qorvo SiC and partner Cambridge GaN Devices (CGD) products paired with high-voltage motor controllersOriginal – Qorvo
