-
June 12 marked a milestone in the history of Siltronic AG: after more than 500 construction days and roughly 23 million working hours, Siltronic inaugurated one of the world’s most advanced wafer fabs. The inauguration of the new production facility, which is one of the most modern and cost-efficient of its kind, took place in Singapore.
The highly automated fab at JTC’s Tampines Wafer Fab Park was officially opened in the presence of around 150 guests, including numerous high-ranking representatives of the Singaporean government, customers and suppliers. Singapore’s Deputy Prime Minister Heng Swee Keat was the Guest of Honour to grace the occasion. The fab was commissioned at the beginning of 2024 and will now be ramped to full capacity over several years.
“With our new fab, we will accompany the future growth of the wafer industry for many years to come and take Siltronic to a new level. What the entire team, including all business partners, has achieved is a masterpiece, and I would like to thank everyone for their outstanding contribution,” said Dr. Michael Heckmeier, CEO of Siltronic AG, in his speech.
Ms. Jacqueline Poh, Managing Director of Singapore Economic Board (EDB) said: “We are proud of our long-standing partnership with Siltronic. As one of top 5 global wafer suppliers, Siltronic’s new fab is a significant expansion that not only supplies to Singapore’s semiconductor industry but also strengthens the resilience of the global semiconductor supply chain. This investment will create good jobs and further grow the existing collaboration that Siltronic has with local suppliers in automation and precision components.”
The success story of Siltronic in Singapore began in 1997 with the founding of Siltronic Singapore Pte. Ltd. in JTC’s Tampines Wafer Fab Park. The first 200 mm wafers were produced as early as 1999. This was followed in 2006 by the establishment of a joint venture with Samsung and the start of construction of the first 300 mm fab, from which the first wafers were delivered to customers in 2008. The foundation stone for the second 300 mm fab was laid in 2021, and it was officially opened today. Singapore is Siltronic’s largest production site.
Today’s inauguration of the state-of-the-art wafer fab in Singapore is not only the largest investment in Siltronic’s history, but also a milestone of which Siltronic is extremely proud. With its high level of automation and impressive efficiency, the fab sets new standards in our industry and strengthens Siltronic’s position as one of the world’s leading wafer manufacturers.
Original – Siltronic
-
Cambridge GaN Devices has launched its lowest ever on-resistance (RDS(on)) parts which have been engineered with a new die and new packages to deliver the benefits of GaN to high-power applications such as data centres, inverters, motor drives and other industrial power supplies. New ICeGaN™ P2 series ICs feature RDS(on) levels down to 25 mΩ supporting multi kW power levels with the highest efficiency.
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“The explosive growth of AI is leading to a significant increase in energy consumption, prompting data centre systems designers to prioritise the use of GaN for high-power, efficient power solutions. This new family of Power GaN ICs is a stepping stone for CGD to support our customers and partners on achieving and exceeding 100 kW/rack power density in Data Centres, required by most recent TDP (Thermal Design Power) trends for High-density computing. On the other hand, developers of motor control inverters are looking to GaN to reduce heat for smaller, longer-lasting system power. These are just two examples of markets that CGD is now aggressively targeting with these new high-power ICeGaN ICs. Simplified gate driver design and reduced system costs, combined with advanced high-performance packaging, make P2 series ICs an excellent choice for these applications.”
Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimise reverse conduction losses, ICeGaN Series P2 ICs outperform discrete e-Mode GaN and other incumbent technologies.
The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, equivalent or better than anything else currently available on the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multi kW applications 6 with ease. The new packages have also been engineered to improve productivity, with wettable flanks to simplify optical inspection.
New P2 ICeGaN GaN power ICs are sampling now. The P2 series includes four devices with RDS(on) levels of 25 mΩ and 55 mΩ, rated at 27 A and 60 A, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.
Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies , and a 3 kW totem-pole power factor correction demo board.
The new P2 series ICeGaN GaN power ICs and demo boards were unveiled publicly at the PCIM exhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.
Original – Cambridge GaN Devices
-
WeEn Semiconductors unveiled new families of silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in TSPAK packaging at this year’s PCIM Europe exhibition and conference. The company has also used the event to showcase for the first time a comprehensive range of integrated SiC power modules in Nuremberg, from June 11-13, 2024.
WeEn Semiconductor’s new TSPAK MOSFET and SBD devices address the demand for high-performance, compact and reliable power management in applications ranging from automotive charging and on-board charger applications to photovoltaic (PV) inverters and high-power-density power supplies (PSUs).
Offering a variety of configuration options for maximum design flexibility, the company’s new SiC modules are ideal for applications such as EV charging, energy storage systems, PV inverters, motor drives, industrial PSUs and test instrumentation.
Originally developed for automotive applications, TSPAK devices combine innovative top-side cooling capability with low thermal impedance to deliver enhanced thermal performance. By removing the PCB thermal resistance from the thermal dissipating path, the Junction-Ambient thermal resistance improves by 16-19%.
This supports high reliability by enabling a greater number of power cycles than conventional packaging as well as providing the increased power densities demanded by compact system designs. Low circuit inductance and low EMC noise help to improve performance and reduce filtering requirements. The WeEn Semiconductors family of TSPAK MOSFETs features 650V, 750V, and 1200V options with resistances ranging from 12mΩ to 150mΩ. TSPAK SBDs are available with current ratings of 10 to 40A in 650V, 750V, and 1200V variants.
Visitors to WeEn’s stand in Hall 9, booth 538, will have the first opportunity to explore the company’s extensive range of SiC power modules. With a wide range of topology options, including half-bridge, four-pack, six-pack, and MPPT booster configurations, the power modules support voltages ranging from 650V to 1200V. Depending on the option chosen and special designs, modules incorporate a variety of advanced features including synchronized chip current sharing, integrated temperature sensors, topside cooling structures and the latest clip-bond technologies.
Original – WeEn Semiconductors
-
SemiQ Inc announced the addition of 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC™ product line. The new devices meet the size and power demands of a wide range of demanding applications including switched-mode power supplies, uninterruptible power supplies (UPS), induction heaters, welding equipment, DC/DC converters, solar inverters and electric vehicle (EV) charging stations.
Featuring zero reverse recovery current and near-zero switching loss, SemiQ’s 1700V SiC Schottky diode technologies offer enhanced thermal management that reduces the need for cooling. As a result, engineers can implement highly efficient, high-performance designs that minimize system heat dissipation, allow the use of smaller heatsinks and lead to cost and space savings. All of the new products support fast switching across operating junction temperatures (Tj) of -55 °C to 175 °C.
The GP3D050B170X (bare die) and GP3D050B170B (TO-247-2L package) discrete diode is rated for respective maximum forward currents of 110A and 151A. Device design supports easy parallel configurations, enhancing flexibility and scalability for various power applications.
The GHXS050B170S-D3 and GHXS100B170S-D3 dual diode packs are rugged modules supplied in a SOT-227 package. Maximum respective forward currents are 110A and 214A and each combine outstanding performance at high-frequencies with low loss and low EMI operation. ensure energy efficiency and reliability by minimizing interference.
Key features include low stray inductance, high junction temperature operation, rugged and easy mounting, and an internally isolated package (AIN), which provides optimal insulation and thermal conductivity. Low junction-to-case thermal resistance enables efficient heat dissipation, ensuring stability under high-power conditions. The modules can be easily connected in parallel due to the positive temperature coefficient (Tc) of the forward voltage (Vf).
“Our new 1700V SiC diodes represent a leap forward in power efficiency and reliability,” said Dr. Timothy Han, President at SemiQ. “With their compact and flexible design, low-loss operation, and superior thermal management, our QSiC™ diodes will enable our customers to create innovative, high-performance solutions while reducing costs and improving overall system efficiency.”
All parts have been tested at voltages exceeding 1870V and have undergone avalanche testing up to 1250mJ. Visitors to SemiQ’s stand at Alfatec’s booth (Hall 7, 418) at PCIM Europe will have the first opportunity to explore the new 1700V SiC diodes.
Original – SemiQ
-
Power Integrations enhanced its hardware-software bundle for brushless DC motors (BLDC) with BridgeSwitch™-2, a new high-voltage integrated half-bridge (IHB) motor-driver IC family targeting applications up to 1 HP (746 W). The new ICs, which feature high- and low-side drivers and advanced FREDFETs with integrated lossless current sensing, deliver inverter efficiency of up to 99 percent.
The IHB architecture eliminates hot spots, which increases design flexibility and reliability, slashes component count and saves PCB area. BridgeSwitch-2 is supported by Power Integrations’ MotorXpert™ software suite which includes single-phase trapezoidal control and three-phase sensor-less Field Oriented Control (FOC) modules, speeding inverter development.
BridgeSwitch-2 ICs handle operational exceptions in hardware, which permits the use of IEC 60730 Class A safety software, reducing certification time by months. Quiescent BLDC inverters can be ordered into sleep-mode, reducing driver power consumption to less than 10 mW; this leaves more power available under regulated standby power limits to be allocated for loads such as network access and monitoring.
Cristian Ionescu-Catrina, product marketing manager at Power Integrations, said: “The low standby consumption of BridgeSwitch-2-based motor drives enables designers to meet new and emerging EU ERP regulations. BridgeSwitch-2 ICs are also far more efficient than IGBT based IPMs across the entire load range.”
He continued: “From startup to performance optimization, the GUI-based tool, terminal emulator and MISRA C-compliant code library of MotorXpert greatly simplifies the design process, allowing the motor architecture to be optimized in real-time without repeated firmware updates. BridgeSwitch-2 is microprocessor agnostic, easing its adoption into existing systems – this is important as engineers update designs to meet more stringent standby regulations.”
BridgeSwitch-2 ICs address a power range of 30 to 746 W (1 HP), encompassing a broad range of applications including heat exchanger fans, refrigerator compressors, fluid and circulation pumps, gas boiler combustion fans, washing machine drums and kitchen blenders and mixers.
The IHB architecture reduces component count by 50 percent and PCB space by 30 percent over discrete designs by eliminating shunt resistors and associated signal conditioning circuits. Shunt losses are also eliminated, improving efficiency. Precise motor control is achieved with the built-in real-time reporting of phase current (IPH) information.
Accurate turn-on/off gate drive and a soft-body diode result in a typical EMI profile 10 dB lower than existing drivers, so a smaller EMI filter can be selected. BridgeSwitch-2 ICs feature built-in DC overvoltage protection and current limits that protect the inverter and the system without relying on system software.
The choice of error-flag or comprehensive fault bus reporting supports a range of system requirements. Emerging use-cases like failure prediction are now possible with the high accuracy of the built-in IPH information and comprehensive reporting via the fault bus. BridgeSwitch-2 motor drives use built-in, hardware-based low- and high-side over-current protection to meet IEC 60335-1 Class A requirements. BridgeSwitch-2 also works without an auxiliary power supply, further reducing PCB area and component count.
Original – Power Integrations
-
Applied EV, a leader in vehicle control system technologies for Software Defined Machines™, announced they have selected CISSOID’s new CXT-ICM3SA series of Silicon Carbide Inverter Control Modules (ICMs) to drive their latest generation of autonomous vehicle E-motors.
Dedicated to the E-mobility market, CISSOID’s software-powered SiC ICMs are augmented with onboard programmable hardware, accelerating the response time to critical events, off-loading the processor cores and enhancing functional safety.
The ICM is integrated into Applied EV’s Digital Backbone™, a centralised control system combining state-of-the-art software and hardware, setting a new benchmark for safety rated vehicles.
Applied EV’s CEO, Julian Broadbent, said “Both Applied EV and CISSOID recognise functional safety is critical in the development and deployment of autonomous vehicles. The partnership integrates CISSOID’s ICMs into our Digital Backbone, allowing for a faster development cycle, giving our customer the safest vehicle in the shortest time possible.”
CISSOID’s CEO, Dave Hutton, said: “We are excited to embark on this collaborative journey with Applied EV to drive innovation in e-mobility. By combining our expertise in electric motor design with Applied EV’s proficiency in software and vehicle integration, the aim is to deliver a game-changing electric motor drive platform for the future of mobility together.”
The collaboration underscores the shared commitment to driving positive change in the automotive industry and contributing to a more sustainable future for transportation globally.
Original – CISSOID
-
Infineon Technologies AG introduced Power System Reliability Modeling, an innovative solution addressing the increasing challenges faced by data centers and telecom infrastructures due to power supply failures in the system.
With 39 percent of downtimes attributed to power outages and an average cost of $687,700 per downtime, the need for seamless operations and mitigation of financial impact is urgent. By integrating Infineon’s power monitoring solution, organizations can enhance operational resilience, reduce their carbon-footprint and achieve substantial cost savings.
The offering consists of an algorithm running on a digital power controller, thus integrating software and hardware. This is in line with Infineon’s strategic approach to provide customers with comprehensive system solutions that include both semiconductor devices and matching software tools. Target applications of the solution include DCDC converters, ACDC rectifiers and IBC modules utilized in data centers, AI servers, GPUs, and telecom networks.
Power System Reliability Modeling acts as a bridge between component and system reliability. It enables real-time power supply health monitoring of the system and lifetime estimation based on dynamic system operating parameters, a power supply system model, and a reliability prediction procedure in digital power controllers by Infineon.
This solution ensures improved device utilization and data-driven maintenance recommendations, translating into enhanced profitability and reduced Total Cost of Ownership (TCO). Customers benefit from real-time system diagnostics for their power supply as well as powerful system reliability-based decisions and quality assurance. The solution is easy to use and integrate into existing designs.
“The Power System Reliability Modeling represents a pivotal step for Infineon and its customers towards reliable and stable power supply in data centers,” said Adam White, Division President Power & Sensor Systems at Infineon. “Following our Product to System approach, the solution focuses on delivering hardware integrated with advanced software capabilities. This approach not only expands product capabilities and scope, but also empowers our customers to create more value and scale their operations faster.”
Further information about the solution is available at www.infineon.com/reliabilitymodeling.
Original – Infineon Technologies
-
Nexperia announced that its class-leading 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in electric vehicles and other automobiles.
Additionally, in a further extension to its portfolio of SiC diodes, Nexperia is now also offering industrial-grade devices with current ratings of 6 A, 16 A, and 20 A in TO-220-2, TO-247-2, and D2PAK-2 packaging to facilitate greater design flexibility. These diodes address the challenges of demanding high voltage and high current applications including switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, motor drives, uninterruptible power supplies as well as photovoltaic inverters for sustainable energy production.
The merged PiN Schottky (MPS) structure of these devices provides additional advantages over similar competing SiC diodes, including outstanding robustness against surge currents. This eliminates the need for additional protection circuitry, thereby significantly reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications. Nexperia’s consistent quality across various semiconductor technologies provides designers with confidence in the reliability of these diodes.
In addition, Nexperia’s ‘thin SiC’ technology delivers a thinner substrate (one-third of its original thickness) which dramatically reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.
“We’ve seen an excellent market response to the initial release of our SiC diodes. They have proven themselves in design-ins with one notable example in power supplies for industrial applications, where customers have achieved especially good results. The superior reverse recovery of these diodes translates to high efficiency in real-world use”, says Katrin Feurle, Senior Director and Head of Product Group SiC Diodes & FETs at Nexperia. “We are particularly excited that this is our first automotive-qualified product, and it is already recognized by major automotive players for its performance and reliability.”
Original – Nexperia
-
Qorvo® announced the industry’s first 4 milliohm silicon carbide (SiC) junction field effect transistor (JFET) in a TOLL package. It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, superior thermal performance, small size and reliability are paramount.
With RDS(on) of just 4 milliohm, the UJ4N075004L8S offers the industry’s lowest on-resistance among the 650V to 750V class of power devices in standard discrete packages. This low RDS(on) drives significant reductions in heat generation and, when coupled with a compact TOLL package, enables a solution size that is 40% smaller than competing devices in TO-263 packages.
This small solution size supports the space-limited dimensions of today’s electromechanical circuit breakers and operates without the need for elaborate cooling systems, accelerating the transition from electromechanical circuit breakers to semiconductor-based solid-state circuit breakers (SSCBs).
“With the introduction of the UJ4N075004L8S, Qorvo continues to lead the way in SiC power innovation, catalyzing the emergence of applications such as circuit protection with ultra-low RDS(on) FET offerings in very small footprints,” said Ramanan Natarajan, director of product line marketing for Qorvo’s SiC Power Products business. “The SSCB market is growing rapidly, and Qorvo’s newest product marks a significant milestone in the evolution of the technology.”
Qorvo’s JFETs are highly robust devices well suited to meet the challenges of circuit protection, providing the ability to turn off at very high inrush currents during circuit faults. Qorvo’s newest JFET can also withstand high instantaneous junction temperatures without experiencing degradation or parametric drift. The normally-on nature of the JFET lends itself to seamless integration into systems where the switch is in the on-state by default and in turn-off state under fault conditions.
The UJ4N075004L8S is now available for sampling and will enter full production in Q4 2024, accompanied by additional JFET options, including 750V with 5 milliohm and 1200V with 8 milliohm ratings, all in TO-247 packaging. For more details about this transformative power technology and detailed product specifications, please visit UJ4N075004L8S.
Original – Qorvo
-
Semikron Danfoss and SMA announced that the Sunny Boy Smart Energy incorporates the SEMITOP E power modules based on silicon carbide. The SEMITOP E features a low-inductance design with superior thermal performance, all in an industry standard housing. The SEMITOP E product offers a variety of circuit topologies based on the latest 650V-1200V silicon carbide technology from multiple sources.
“We strongly believe that the SEMITOP E is the power semiconductor package of choice for applying silicon carbide in advanced solar inverters,” says Roberto Agostini, Product Manager Semikron Danfoss.
“The SEMITOP E has been essential in increasing throughput and efficiency in our assembly,” says SMA Product Manager Petra Nawratil. “The press-fit design and simple mounting approach enabled a higher automation level in the assembly line for the Sunny Boy Smart Energy and following products.”
Residential solar inverters are tasked with generating solar power with the highest efficiency, enabled through silicon carbide technology.
The Sunny Boy Smart Energy is part of the new SMA Home Storage Solution, which enables fast and effective solar generation and storage. It is scalable to meet changing needs and adaptable to additional use cases such as an EV charger, a heat pump, dynamic tariffs, or peak load shaving. The modular SMA Home Storage battery can be expanded anytime to store more solar power.
Original – Semikron Danfoss
