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MCC Semi is unleashing the ultimate component for high-power switching — 100V N-Channel MOSFET, MCP2D6N10Y. Leveraging advanced split-gate-trench (SGT) technology and low on-resistance of 2.6mΩ, this MOSFET is made to slash conduction losses while enhancing thermal efficiency.
Demanding power electronics get an extra boost of efficiency from its ultra-low junction-to-case thermal resistance of 0.6K/W. The TO-220 package only enhances its performance thanks to its high surge capability.
An ideal combination of robust current handling, superior heat dissipation, and optimal efficiency ensures this N-channel MOSFET delivers unwavering operation in high-power applications ranging from battery management systems and motor drives to DC-DC converters.
Features & Benefits:
- High-performance 100V N-channel MOSFET
- Utilizes SGT technology
- Low on-resistance of 2.6mΩ
- Impressive junction-to-case thermal resistance of 0.6K/W
- Maximizes thermal efficiency and minimizes power losses
- Excellent thermal capabilities
- Robust current handling capacity
- Designed for TO-220 package with high surge capability
Original – Micro Commercial Components
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Maspower Semiconductor announced the launch of its latest IGBT (Insulated Gate Bipolar Transistor) module, the MSG140T120HLF4. This advanced device is designed to meet the rigorous demands of high-power applications, including electric vehicle (EV) charging, string converters, industrial uninterruptible power supplies (UPS), and other power-train systems requiring high-efficiency power switching.
Features and Specifications
The MSG140T120HLF4 boasts a remarkable set of features that make it an ideal choice for high-voltage and high-current applications.
- High Voltage and Current Capability: With a collector-emitter voltage (VCE) of up to 1200V and a continuous collector current (IC) of 140A at 100°C, this IGBT module can handle demanding power loads with ease.
- Very Low Saturation Voltage: The device offers an ultra-low saturation voltage (VCE(sat)) of just 1.94V at 100A, ensuring high efficiency in power conversion.
- High Thermal Tolerance: The maximum junction temperature (TJ) is rated at 175°C, allowing for operation in harsh environments without compromising performance.
- Positive Temperature Coefficient: The device exhibits a positive temperature coefficient, improving thermal stability and reducing the risk of thermal runaway.
- Fast Switching Speeds: With rapid turn-on and turn-off delays, rise times, and fall times, the IGBT module ensures high-speed switching for efficient power conversion.
- High Power Handling: With a maximum collector current of 280A at 25°C and 140A at 100°C, this IGBT module can effortlessly handle high-current demands.
- Tight Parameter Distribution: Ensures consistent performance across multiple units, simplifying design and manufacturing processes.
- High Input Impedance: Minimizes gate drive requirements, reducing system complexity and cost.
Versatile Applications
With its exceptional electrical and thermal performance, the MSG140T120HLF4 is well-suited for a wide range of applications that require high-power switching capabilities.
- Electric Vehicle (EV) Charging: Its high power handling capability and fast switching speeds make it ideal for EV charging stations.
- String Converters: Suitable for solar and other renewable energy systems requiring efficient power conversion and efficient energy management.
- Industrial UPS Systems: Ensures uninterrupted power supply to critical industrial equipment, minimizing downtime and maintaining operational continuity.
- Other High-Power Train Applications: Suitable for a variety of high-power switching applications, including motor drives, inverters, and power conversion systems.
Original – Maspower Semiconductor
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onsemi announced results for the second quarter of 2024 with the following highlights:
- Revenue of $1,735.2 million
- GAAP gross margin and non-GAAP gross margin of 45.2% and 45.3%, respectively
- GAAP operating margin and non-GAAP operating margin of 22.4% and 27.5%, respectively
- GAAP diluted earnings per share and non-GAAP diluted earnings per share of $0.78 and $0.96, respectively
- Returned ~$650 million of free cash flow over last twelve months to shareholders through stock repurchases
“We remain dedicated to driving growth through market share gains, doubling down on investments in strategic markets, and expanding the breadth of our portfolio of industry-leading products with analog and mixed-signal solutions,” said Hassane El-Khoury, president and CEO, onsemi. “As reflected by our recent supply agreement with Volkswagen Group, we also continue to strengthen our silicon carbide leadership position in automotive as we ramp production with leading global OEMs in Europe, North America and China.”
Original – onsemi
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VisIC Technologies Ltd. has partnered with Heraeus Electronics and PINK to develop an advanced power module utilizing D3GaN technology. This groundbreaking power module is based on a silicon nitride (Si₃N₄) ceramic substrate, an innovative silver (Ag) sintering process and advanced top side interconnect, promising unprecedented reliability and performance for battery electric vehicles (BEVs).
The collaboration brings together VisIC’s expertise in GaN-based devices, Heraeus Electronics’ cutting-edge packaging materials know-how, and PINK’s state-of-the-art sintering technology. The synergy of these industry leaders has culminated in the development of a power module that is setting new standards for GaN based power modules to revolutionize the EV industry.
VisIC’s D3GaN technology is at the heart of this power module, offering significant improvements in efficiency, thermal management, and power density. This technology leverages the superior electrical properties of gallium nitride to deliver faster switching speeds and higher power handling capabilities compared to traditional silicon-based devices.
The use of a Si₃N₄ metal ceramic substrate is a key innovation in this power module. Si₃N₄ is known for its excellent thermal conductivity, mechanical strength, and reliability under high-temperature conditions. These properties are crucial for the demanding environment of electric vehicle applications, ensuring the power module can withstand the rigors of everyday use while maintaining optimal performance.
The adoption of the silver sintering process by PINK enhances the thermal and electrical conductivity of the module. Silver sintering is a low-temperature bonding process that creates robust and reliable connections between components, improving the module’s overall durability and efficiency. This process is critical for the high reliability required in EV powertrains, where consistent performance is non-negotiable.
The resulting power module is designed to meet the stringent reliability and performance standards of the electric vehicle industry. Its advanced materials and innovative construction techniques ensure it can deliver the high-power density of over 500Arms/650V and efficiency needed for modern BEVs, while also offering long-term reliability and durability at a cost point near silicon devices.
This collaboration marks a significant milestone in the advancement of power electronics for electric vehicles. The integration of VisIC’s D3GaN technology with Heraeus Electronics’ sintering paste and PINK’s Ag and Cu sintering process and flexible sintering equipment sets a new benchmark for power module performance in the EV market. This innovation is expected to drive the adoption of GaN technology in EV applications, paving the way for more efficient, reliable, and sustainable electric transportation solutions.
Tamara Baksht, CEO of VisIC, state: “We are thrilled to work with the leading manufacturer of sintering processes of Heraeus Electronics and PINK and adapt their experience into GaN based power modules to develop the next generation of power module for high volume automotive inverter applications.”
PINK, Andrea Pink, CEO of PINK statement: “We are excited to work with such a future driven company as VisIC together with our long-term partner Heraeus Electronics, supporting the newest product innovation for GaN applications.”
Heraeus Electronics Dr. Michael Jörger, EVP Head of Business Line Power Electronic Materials added: “With our materials, application know-how and engineering services we are glad to work with our partners on speeding up the innovative approach of highly efficient GaN modules for automotive applications.”
Original – VisIC Technologies
