MCC Semi is unleashing the ultimate component for high-power switching — 100V N-Channel MOSFET, MCP2D6N10Y. Leveraging advanced split-gate-trench (SGT) technology and low on-resistance of 2.6mΩ, this MOSFET is made to slash conduction losses while enhancing thermal efficiency.

Demanding power electronics get an extra boost of efficiency from its ultra-low junction-to-case thermal resistance of 0.6K/W. The TO-220 package only enhances its performance thanks to its high surge capability.

An ideal combination of robust current handling, superior heat dissipation, and optimal efficiency ensures this N-channel MOSFET delivers unwavering operation in high-power applications ranging from battery management systems and motor drives to DC-DC converters.

Features & Benefits:

  • High-performance 100V N-channel MOSFET
  • Utilizes SGT technology
  • Low on-resistance of 2.6mΩ
  • Impressive junction-to-case thermal resistance of 0.6K/W
  • Maximizes thermal efficiency and minimizes power losses
  • Excellent thermal capabilities
  • Robust current handling capacity
  • Designed for TO-220 package with high surge capability

Original – Micro Commercial Components