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GlobalWafers Co., Ltd. announced that GWC subsidiaries, GlobalWafers America (GWA) and MEMC LLC, have signed a non-binding preliminary memorandum of terms (PMT) with the U.S. Department of Commerce for up to $400 million in direct funding under the CHIPS and Science Act to support GWC’s construction of advanced silicon wafer manufacturing facilities in Sherman, Texas and St. Peters, Missouri.
When complete, the Sherman, Texas complex will be the first fully integrated advanced silicon wafer production line built in the United States in over 20 years. GWA President Mark England remarked, “With the support of the Biden Administration, we are honored to be bringing to American shores the world’s most cutting-edge 300mm semiconductor wafer technology, filling what the White House has called a “key vulnerability” within the U.S. semiconductor supply chain. GlobalWafers is fully committed to the U.S. market, and we are excited to be playing a defining role in the nation’s semiconductor rebirth.”
With this proposed investment, GWA will also become a key node in Texas’s rapidly developing Silicon Prairie ecosystem. England added, “The state of Texas and the North Texas Texoma region have welcomed GWA with open arms and investment incentives. We are proud to reciprocate their hospitality by bringing to Sherman 1200 construction jobs and 750 high paying manufacturing jobs ranging from production operators to technicians and engineers between now and 2026.” As the only confirmed advanced node wafer manufacturer now investing in the United States, GWA will reduce the United States’ complete dependence on overseas manufacturing facilities to provide wafers for advanced chips.
Already home to semiconductor pioneer Texas Instruments (TI), the GlobalWafers investment will help make North Texas the most unique semiconductor ecosystem in the country as headquarters to the nation’s leading analogue and embedded semiconductor company AND home to the country’s only 300-mm silicon wafer manufacturer for advanced chips. TI Vice President of Worldwide Procurement and Logistics Rob Simpson congratulated both GlobalWafers and the U.S. Department of Commerce on this announcement, noting: “TI welcomes the investment in GlobalWafers America in North Texas, as it will be a very meaningful addition to the growing semiconductor ecosystem here.”
“Texas continues to lead the country as the Best State for Business,” said Governor Greg Abbott. “Companies like GlobalWafers America – the only advanced node wafer manufacturer in the U.S. – are investing in Texas because of our world-class business climate, business-friendly regulations, and young, growing, and highly skilled workforce. GlobalWafers is a crucial partner in our efforts to remain the nation’s No. 1 state for semiconductor manufacturing, and I thank them for choosing North Texas for their new facility.”
In support of national economic and resilience objectives, GWC is committed to developing in the United States a broad range of next-generation wafer technology. This includes establishing a Research and Development Center of Excellence in Sherman as well as building the United States’ only 300-mm manufacturing facility for advanced Silicon-On-Insulator (SOI) wafers at GWC’s MEMC LLC subsidiary in St. Peters, Missouri where the project brings an additional 500 construction jobs and 130 high quality manufacturing jobs.
As the only U.S. source of 300-mm SOI wafers, the MEMC investment will add a new level of resilience to the U.S. supply chain. On this point, Ashlie Wallace, Senior Vice President of Global Supply Chain at GlobalFoundries observed, “GlobalFoundries applauds the proposed CHIPS direct funding to GlobalWafers, a longstanding strategic partner of ours which provides an important domestic supply of silicon wafers critical for the essential semiconductors we manufacture.” Wallace added, “Federal investments across the U.S. semiconductor ecosystem are strengthening our industry and the supply chains that are vital to our customers and the economy.”
Noting the significance of this proposed funding to U.S. supply chain resilience efforts, U.S. Secretary of Commerce Gina Raimondo said, “President Biden is restoring our leadership in the entire semiconductor supply chain – from materials to manufacturing, to R&D. With this proposed investment, GlobalWafers will play a crucial role in bolstering America’s semiconductor supply chain by providing a domestic source of silicon wafers that are the backbone of advanced chips. As a result of this proposed investment, the Biden-Harris Administration is helping to secure our supply chains, which will create over 2,000 jobs across Texas and Missouri and ultimately lower costs and improve economic and national security for Americans.”
In addition to the direct grant funding announced today, GWC plans to apply for the U.S. Treasury Department’s Advanced Manufacturing Investment Credit (AMIC) of up to 25% of qualified expenditures at the GWA and MEMC LLC facilities.
From Hsinchu, Taiwan, GlobalWafers Chairwoman and CEO Doris Hsu expressed her personal thanks to the U.S. Congress, the Department of Commerce, and the Department of Treasury for CHIPS Act support: “Thanks to U.S. Government support, GlobalWafers is pleased to be a key node in the U.S. semiconductor supply chain. I’d like to particularly thank Secretary Raimondo for her partnership and vision throughout this journey. From day one, her encouragement gave me confidence that U.S. Government support for our investment would be significant and strategic to U.S. objectives.”
As a key ESG imperative, GlobalWafers companies across the globe practice green manufacturing and constantly seek to improve energy efficiency, water conservation, waste management and air pollution control. When at full ramp, GWC’s new and expansion facilities in Sherman and St. Peters will recycle up to half of the water used in production and have forward plans to utilize 100% renewable energy to manufacture the world’s most advanced silicon wafers. The GlobalWafers family of companies is committed to reducing our environmental footprint to the fullest extent possible.
GlobalWafers Co., Ltd., the world’s third largest supplier of semiconductor wafers, maintains 18 manufacturing and operational sites spanning three continents and nine countries. The company is a global leader in semiconductor technology, providing innovative and advanced technology solutions to leading chip manufacturers to transform lives around the world.
Original – GlobalWafers
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Toshiba Electronic Devices & Storage Corporation launched 650V N-channel power MOSFETs “TK068N65Z5, TK095E65Z5, TK095A65Z5, TK095V65Z5, TK115E65Z5, TK115A65Z5, TK115V65Z5 and TK115N65Z5” and added them to the lineup of Toshiba’s latest-generation DTMOSVI series with high-speed diodes (DTMOSVI (HSD)) that uses super junction structure and is suitable for high-efficiency switching power supplies for data centers and power conditioners for photovoltaic generators. Packages of the new products are TO-247, TO-220SIS, TO-220 and DFN8×8.
The new products with the DTMOSVI (HSD) process use high-speed diodes to improve the reverse recovery characteristics important for bridge circuit and inverter circuit applications. Against Toshiba’s existing product TK090A65Z of the standard type DTMOSVI, the new product TK095A65Z5 achieves an approximately 65% reduction in reverse recovery time (trr), and an approximately 88% reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt=100A/μs).
In addition, the DTMOSVI (HSD) process improves on the reverse recovery characteristics of Toshiba’s existing products DTMOSIV series with high-speed diodes (DTMOSIV (HSD)), and has a lower drain cut-off current at high temperatures. Furthermore, the figure of merit “drain-source On-resistance × gate-drain charge” is also lower.
The high temperature drain cut-off current of the new product TK095A65Z5 is approximately 91% lower, and the drain-source On-resistance × gate-drain charge approximately 70% lower, than in Toshiba’s existing product TK35A65W5. This advance will cut equipment power loss and help to improve efficiency.
A reference design, “1.6kW Server Power Supply (Upgraded)“, that uses the same series product TK095N65Z5 is available on Toshiba’s website.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba also will continue to expand its lineup of the DTMOSVI series. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Applications
Industrial equipment
- Switching power supplies (data center servers, communications equipment, etc.)
- EV charging stations
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- MOSFETs with high-speed diodes in the latest-generation DTMOSVI series
- Reverse recovery time due to high-speed diodes:
TK068N65Z5 trr=135ns (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 trr=115ns (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 trr=110ns (typ.) - High-speed switching time due to low gate-drain charge:
TK068N65Z5 Qgd=22nC (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 Qgd=17nC (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 Qgd=14nC (typ.)
Original – Toshiba
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AIXTRON SE supports Nexperia B.V. in the ramp-up of its 200mm volume production for silicon carbide (SiC) and gallium nitride (GaN) power devices. With the new G10-SiC for the 200mm SiC volume ramp, Nexperia is placing a repeat order for AIXTRON SiC tools. This is complemented by an order for AIXTRON G10-GaN tools.
Both GaN and SiC epitaxial films are essential for the design of next-generation energy-efficient Field-Effect (FET) or Metal-Oxide-Field Effect (MOSFET) transistors to be used in various power conversion applications ranging from data centers and solar inverters in electric vehicles (EV) or trains.
Nexperia has decades of experience in the development of power devices, achieving more than 2.1 billion USD in revenue in 2023. After releasing its first GaN FET device in 2019 and its first SiC MOSFET in 2023, Nexperia continues to expand its portfolio with new high-reliability and power-efficient devices.
Nexperia, headquartered in Nijmegen (Netherlands), operates front-end factories in Hamburg (Germany) and Greater Manchester (England). The AIXTRON epitaxy systems will be installed at Nexperia’s wafer fab in Hamburg (Germany), further strengthening the semiconductor production capabilities in the region. Nexperia’s Hamburg site produces approximately 100 billion discrete semiconductors annually, accounting for about a quarter of the global production of this type of products.
“We are honored to strengthen our alliance with Nexperia, a pivotal player in the semiconductor landscape. Our G10 epitaxy solutions are at the heart of this collaboration, bolstering Nexperia’s growth strategies and enabling the high-volume production of wide bandgap semiconductors for commercial applications. Together, we are setting the pace for the industry’s transition to more energy-efficient SiC and GaN solutions”, said Dr. Felix Grawert, CEO and President of AIXTRON SE.
“As we advance our technological capabilities and market presence in high-power semiconductor production, our strategic partnership with AIXTRON is transformative. Integrating the G10 systems will significantly enhance our wide bandgap technology development and production capabilities. We build on AIXTRON’s proven uniformity and leverage the additional productivity gains of AIXTRON’s G10 tools to scale up our production efficiently and cost-effectively. With the new G10 tools in our Hamburg facility, we are poised for further advancements in our production capabilities,” said Achim Kempe, COO at Nexperia B.V.
Original – AIXTRON
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Aehr Test Systems announced financial results for its fiscal 2024 fourth quarter and full year ended May 31, 2024.
Fiscal Fourth Quarter Financial Results:
- Net revenue was $16.6 million, compared to $22.3 million in the fourth quarter of fiscal 2023
- GAAP net income was $23.9 million, or $0.81 per diluted share, which includes the impact of a tax benefit resulting from the release of the Company’s full income tax valuation allowance of approximately $20.8 million, compared to GAAP net income of $6.1 million, or $0.21 per diluted share, in the fourth quarter of fiscal 2023.
- Non-GAAP net income was $24.7 million, or $0.84 per diluted share, which includes the tax benefit and excludes acquisition related costs and the impact of stock-based compensation, compared to non-GAAP net income of $6.8 million, or $0.23 per diluted share, in the fourth quarter of fiscal 2023.
- Bookings were $4.0 million for the quarter
- Backlog as of May 31, 2024, was $7.3 million. Effective backlog, which includes all orders received since the end of the fourth quarter, is $20.8 million.
- Total cash and cash equivalents as of May 31, 2024 were $49.2 million, up from $47.6 million at February 29, 2024
Fiscal Year Financial Results:
- Net revenue was a record $66.2 million, compared to $65.0 million in fiscal 2023
- GAAP net income was $33.2 million, or $1.12 per diluted share, which includes the impact of a tax benefit resulting from the release of the Company’s full income tax valuation allowance of approximately $20.8 million recognized in the fourth quarter, compared to GAAP net income of $14.6 million, or $0.50 per diluted share, in fiscal 2023.
- Non-GAAP net income, which includes the tax benefit and excludes acquisition related costs and the impact of stock-based compensation, was $35.8 million, or $1.21 per diluted share, compared to non-GAAP net income of $17.3 million, or $0.59 per diluted share, in fiscal 2023.
An explanation of the use of non-GAAP financial measures and a reconciliation of Aehr’s non-GAAP financial measures to the most directly comparable GAAP financial measures can be found in the accompanying tables.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“Our full-year revenue and net income results exceeded our previously provided guidance and surpassed analyst consensus. Although we saw customer pushouts of silicon carbide devices due to slower electric vehicle (EV) demand in the second half of our fiscal year, we achieved another record year for annual revenue for Aehr.
“Wafer level test and burn-in of silicon carbide power semiconductors used in EVs was a key driver of our business in the last year, and we anticipate silicon carbide will continue to be a key contributor to revenue in the current fiscal year and beyond. To that point, we announced today that we received $12.7 million in orders from one of our silicon carbide test and burn-in customers for FOX WaferPak™ full wafer Contactors to support production of silicon carbide power devices for electric vehicles to be delivered over the next three months.
“The silicon carbide market continues to be an enormous opportunity for Aehr as we see more auto suppliers committed to silicon carbide in their EVs, as well as roadmaps that are based on modules for their electric motor power inverters. By 2030, battery EVs are forecasted to more than triple last year’s sales to 30 million or 30% of total vehicles manufactured worldwide.
“We remain actively engaged with a significant number of new silicon carbide device and module suppliers and seek to meet their anticipated capacity coming online beginning in 2025. We are also seeing growing demand for silicon carbide devices beyond the EV market, such as solar, data center, and other industrial applications for power conversion. We believe we are well positioned to continue to grow our business in silicon carbide, and we expect to receive first orders from a significant number of additional silicon carbide customers by the end of this fiscal year.
“We are also seeing traction with several emerging opportunities for our test and burn-in solutions in new target markets and expect bookings and revenue across a much broader range of customers and markets this fiscal year.
“One of the key new market opportunities we are focusing on is the growing demand for Artificial Intelligence (AI) processor test and burn-in at both the wafer level and the packaged part level.
“We are currently working with an AI accelerator company and have secured a commitment from them to evaluate our FOX solution for use in production wafer level burn-in of their high-power processors. Upon successful demonstration of wafer level test results and throughput, we expect they will utilize our new high-power FOX-XP systems for production of their next generation AI processors, starting this fiscal year.
“We also announced today in a separate press release our acquisition of Incal Technology, a manufacturer of highly acclaimed reliability test and burn-in solutions of a wide range of semiconductor devices and markets, with a new product family of ultra-high-power test solutions for AI accelerators, graphics & network processors, and high-performance computing processors. We believe that between wafer level and package part, the reliability test and production burn-in market for AI processors exceeds $100 million annually, and with this combined product portfolio we believe we have the opportunity to capture a meaningful share of the market this fiscal year.
“This past year we announced our first order for a FOX wafer level test and burn-in system for gallium nitride (GaN) devices. While silicon carbide will be the semiconductor material of choice for EV traction inverters, GaN is expected to gain significant penetration in the on-board charging market as well as other automotive, solar, and data center power conversion applications. We are working with several of the GaN market leaders, and received a significant number of WaferPak orders throughout the year for gallium nitride reliability test and qualification. We have now received our first forecasts for wafer level production burn-in systems to be delivered during this fiscal year. We continue to be encouraged by this market and believe it will be significant in market size for semiconductors and has the potential to be a solid market opportunity for Aehr’s solutions.
“Within the silicon photonics market, we shipped the first order from a major silicon photonics customer for the new high-power configuration of our FOX-XP system this last fiscal year. This new configuration expands our market opportunity by enabling cost-effective volume production test of wafers of next-generation photonic ICs that are targeted for use in the new optical I/O or co-packaged optics market. Nvidia, AMD, and Intel have all discussed the potential for adding optical chip-to-chip communication for performance improvement and power savings for AI processors and High-Performance Computing chips.
“Looking ahead, we believe Aehr has significant opportunities for growth in fiscal 2025 and beyond with our industry-leading product portfolio, and we look forward to updating you on our progress throughout the year as we seek to capitalize on these exciting new opportunities.”
Fiscal 2025 Financial Guidance:
For the fiscal year ending May 30, 2025, Aehr expects total revenue of at least $70 million and net profit before taxes of at least 10% of revenue.
Original – Aehr Test Systems
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Mouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation products, announced a global distribution agreement with Sanan Semiconductor, a leading manufacturer of silicon carbide (SiC) power products, including industrial and automotive SiC Schottky barrier diodes (SBDs) and SiC MOSFETs. Sanan Semiconductor offers flexible solutions for high-power and high-reliability applications, such as server power supplies, photovoltaic inverters, electric vehicles, and home appliances.
Sanan Semiconductor’s industrial SiC Schottky barrier diodes offer higher efficiency, greater heat dissipation capability, and lower losses than traditional silicon-based solutions. These features enable higher power density and longer-term reliability in system designs.
These devices show no recovery at turn-off and allow a low leakage current with a reverse voltage of up to 1200V. Utilizing an innovative merged PiN Schottky (MPS) structure and substrate thinning technology, these SiC SBDs offer compelling price performance while meeting the industry’s most stringent reliability requirements. Sanan Semiconductor’s SiC SBDs also maintain consistent performance over a broad temperature range, simplifying system design.
Sanan Semiconductor’s automotive SiC Schottky barrier diodes are RoHS-compliant and AEC-Q101 qualified, making them ideal for use in automotive applications. These automotive SiC components offer superior power handling due to their high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness. These devices offer a greatly reduced capacitive charge (Qc), which minimizes reverse recovery loss and aids in fast switching.
Both grades of SiC SBDs are offered in a diverse range of packaging options to suit every need. From standard Transistor Outline (TO) packages to Surface Mount Device (SMD) solutions and bare die, Sanan Semiconductor’s packaging options are engineered for versatility and performance.
As a global authorised distributor, Mouser offers the world’s widest selection of the newest semiconductors and electronic components — in stock and ready to ship. Mouser’s customers can expect 100% certified, genuine products that are fully traceable from each of its manufacturer partners.
To help speed up the design process for customers, Mouser’s website hosts an extensive library of technical resources, including a Technical Resource Centre, along with product data sheets, supplier-specific reference designs, application notes, technical design information, engineering tools and other helpful information.
Original – Mouser Electronics
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As part of a so-called Joint Lab at Fraunhofer IISB, AIXTRON SE operates equipment, works on process development for SiC epitaxy and runs a demo center for its customers. Joint Labs like this are a great opportunity for companies to collaborate with Fraunhofer IISB in an industry-compatible laboratory environment.
For the epitaxy Joint Lab, the awarded IISB team ensures the continuous fault-free operation of already 5 state-of-the-art G10 SiC reactors, and enables the installation of new systems with minimal downtime. By setting up automated metrology and by optimizing wafer logistics, workflows and data management, the team has also established a modern wafer characterization facility at the IISB with a fast feedback loop for AIXTRON.
Fraunhofer IISB is thrilled for its colleagues Rainer Apelt, Nino Fröbisch and Katharina Roßhirt-Lilla from the SiC Epitaxy Group of the Materials Department together with Christian Heilmann, Rainer Schönweiß and Christopher Torscher from the Infrastructure Group within the Central Services Department. Such outstanding results are the base for the success of the Joint Labs model at Fraunhofer IISB.
Original – Fraunhofer IISB
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Nexperia released 650V ultra- and hyperfast recovery rectifiers in D2PAK Real-2-Pin (R2P) packaging for use in various automotive, industrial and consumer applications including charging adapters, photovoltaic (PV), inverters, servers and switched mode power supplies (SMPS).
Combining planar die technology with a state-of-the-art junction termination (JTE) design, these rectifiers offer high power density, fast switching times with soft recovery and excellent reliability. They are encapsulated in a D2PAK Real-2-Pin Package (SOT8018), which offers the same package outline as the standard D2PAK package but has only two pins instead of three (the middle cathode pin has been removed). This increases the pin-to-pin distance from 1.25mm to over 4mm, which allows to meet the creepage and clearance requirements stated in the IEC 60664 standard.
“These recovery rectifiers further demonstrate Nexperia’s expertise in the field of semiconductor device packaging” according to Frank Matschullat, Head of Product Group Power Bipolar Discretes at Nexperia. “By taking the innovative step of removing the cathode pin from a standard D2PAK package, Nexperia has created a Real-2-Pin package that can meet the creepage and clearance requirements, in particular for high voltage automotive applications.”
Original – Nexperia
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Efficient Power Conversion (EPC) announced that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months. The next-generation wide bandgap semiconductors developed by EPC are essential to artificial intelligence (AI), satellites, fast chargers, lidar, humanoid robots and many other transformational technologies.
The U.S. International Trade Commission (ITC) found two of EPC’s key patents valid and one, the Company’s foundational patent, infringed by Innoscience (Zhuhai) Technology Co., Ltd. and its affiliate, Innoscience America, Inc. The ITC’s recommendation comes on the heels of two recent decisions from the China National Intellectual Property Administration (CNIPA), which similarly validated EPC’s counterpart patents in China. The ITC initial determination is a significant milestone in solidifying EPC’s leadership in wide bandgap semiconductors and could lead to a ban later this year on importation of Innoscience’s infringing products into the United States.
“The ITC’s finding that Innoscience uses our patented technology without authorization puts EPC in an enviable position, as U.S. and Chinese regulatory bodies have upheld the validity of our patents,” said Alex Lidow, CEO and Co-Founder of EPC.
“The Commission’s recommendations validate nearly two decades of hard work, resources and R&D that went into developing EPC’s uniquely valuable intellectual property portfolio,” Dr. Lidow added.
Over the last 15 years, EPC has capitalized on its first-mover advantage to develop a broad portfolio of over 200 GaN-related patents and over 150 products, which include its rapidly growing family of integrated circuits, automotive qualified and radiation hardened devices.
Compared with traditional silicon-based power devices, GaN represents a significant leap, with higher efficiency, faster switching speeds, smaller size and lower cost. GaN power devices are integral to self-driving vehicles, medical and communications devices, next-generation rapid chargers, drones, satellites, data centers, e-bikes, solar power systems and humanoid robots, among many other applications. Most notably, EPC’s cutting-edge semiconductors are central to powering the AI revolution by significantly freeing up space for extra computing power while simultaneously reducing energy consumption.
The ITC’s preliminary ruling found both U.S. patents that EPC asserted against Innoscience valid. It also found “infringement [by Innoscience] of U.S. Patent No. 8,350,294,” EPC’s foundational patent used broadly across multiple industries. The second EPC patent, U.S. Patent No. 8,404,508, was found valid, but not infringed by Innoscience. The Commission’s final determination is expected to be issued on November 5, 2024.
Original – Efficient Power Conversion
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The third edition of the second-level master’s program in “Power Electronics Devices and Technologies” organized by the Department of Electrical, Electronic and Information Engineering (DIEEI) of the University of Catania together with STMicroelectronics has been announced.
The goal of the master’s program is to train specialists in technologies based on Wide Band-Gap semiconductors, the new frontier of power electronics that ensures more efficient performance in line with the sustainable development goals defined by Agenda 2030. These technologies are for use in production processes in industries such as automotive, renewable energy, and electrical energy conversion and storage.
“There is a strong market demand for highly specialized professionals trained in the field of power electronics, to meet the needs identified by macro-trends in terms of energy efficiency and the electrification of mobility in the frame of sustainable development,”said Professor Mario Cacciato, coordinator of the master’s program.
“This second-level master’s program offers to master’s graduates in different STEM disciplines opportunities to complete the training and focus it on topics of great interest for research and industry. In addition, the master’s program constitutes a synergistic model for the professional development of young talent from academia together with the industrial world, as effectively demonstrated by the first two editions of the master’s program.”
“STMicroelectronics’ site in Catania is a center of excellence in the European arena for power electronics technologies, thanks in part to the strategic investment in the vertically integrated production of Silicon Carbide devices,” said Gianfranco Di Marco, Power Transistor Sub-Group, Chief of staff and Technical Communication Manager at STMicroelectronics.
“Training specialized profiles and skills in the field of power electronics with multidisciplinary knowledge is essential for fostering technological innovation. This third edition follows the success of the previous ones with theoretical lectures held at University of Catania and internships at ST’s Catania site allowing students to experience working with a leader in power semiconductors. This will forge a close connection between the world of education and the world of work, an essential prerequisite for the sustainable development of the area, and the creation of new career opportunities for students.”
The second-level master’s program offers theoretical and practical training, divided into 7 teaching modules in English. Lectures will be taught by university professors and appropriate specialists from within STMicroelectronics, who will also act as mentors during their internship in the company’s departments and research laboratories. Some lectures, moreover, will be held at ST’s Catania site. Finally, students will participate in seminars held by experts from several major world’s corporations in the industry.
The training course is open to those with a master’s degree obtained in the last five years in:
- Electronic engineering (LM/29);
- Electrical engineering (LM/28);
- Computer and information engineering (LM/32);
- Mechanical engineering (LM/33);
- Chemical engineering (LM22);
- Automation engineering (LM25);
- Telecommunications engineering (LM/27);
- Physics (LM17);
- Materials science and engineering (LM/53);
- Chemical sciences (LM/54);
Proficiency in English is required.
A maximum of 30 participants will be admitted to this master’s degree program. The top 10 in the eligible list will be awarded a scholarship. Those ranking from 11th to 20th will receive a contribution to the tuition fee. Applications must be submitted by September 30, 2024. More information is available here.
The Scientific Committee members are the University of Catania faculty members Mario Cacciato (coordinator), Giuseppe Compagnini, Guglielmo Guido Condorelli, Salvatore Mirabella, Salvatore Pennisi and Antonio Terrasi; and Giuseppe Arena, Michele Calabretta, Gianfranco Di Marco, Vincenzo Randazzo, Mario Saggio, Rosario Scollo, Filippo Scrimizzi and Gabriele Bellocchi of STMicroelectronics.
Original – STMicroelectronics
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LATEST NEWS / PROJECTS / SiC / TOP STORIES / WBGSiCrystal’s SiC Wafers Production Capacity to Triple by 2027 with a New Production Site in Nuremberg
July 4, 2024
2 Min ReadIn an important step towards strengthening the semiconductor industry and promoting sustainable technologies, SiCrystal GmbH will create new, additional production space in the north-east of Nuremberg, directly opposite the existing site. The new building will offer an additional 6,000 square meters of production space and will be equipped with state-of-the-art technology to further optimize the production of silicon carbide wafers.
The close proximity to the existing plant will ensure close integration of the production processes. SiCrystal’s total production capacity, including the existing building, will be approximately three times higher in 2027 than in 2024.
“The new space will significantly increase the production capacity for SiC substrates and we are proud that we were able to welcome Mayor König to the ground-breaking ceremony,” says Dr. Robert Eckstein, CEO of SiCrystal. This underlines the importance of this project for the city and the region.
“This groundbreaking ceremony marks an important milestone for SiCrystal and underlines our commitment to the metropolitan region. In this way, we can continue to supply innovative products of the highest quality for our customers in the future and make a positive contribution to global sustainability. “, said Dr. Erwin Schmitt, COO of SiCrystal. “With the additional production capacities, we will strengthen our market position and make an important contribution to technological development in the semiconductor industry.”
Nuremberg’s Mayor Marcus König congratulates on this event: “SiCrystal is one of the world’s leading manufacturers of silicon carbide semiconductor substrates – among other things, these products are needed for the energy transition. I am delighted that SiCrystal is committing itself to Nuremberg as a location with this massive investment and is thus not only retaining jobs but also creating new ones. Nuremberg is an attractive location.”
The construction work is scheduled to be completed by the beginning of 2026. And will create new jobs in the region. The new building is being realized in cooperation with the general contractor Systeambau from Hilpoltstein.
SiC wafers from SiCrystal, a subsidiary of the Japanese ROHM Group, are of crucial importance for the production of high-performance semiconductor components. By using SiC, we can achieve higher efficiency, lower energy consumption and improved performance in various applications such as electric vehicles, solar energy, and industrial equipment.
SiCrystal is proud to be a fast-growing employer in the metropolitan region and aims to increase employment by more than 100 by the end of the 2027/28 financial year.
Original – SiCrystal
