MCC Semi is expanding advanced silicon carbide portfolio with six new 650V SiC MOSFETs. Designed for demanding applications, these components boast high-voltage capability and an on-resistance range of 25 mΩ to 100 mΩ. They’re also equipped with avalanche ruggedness, low switching losses, and enable high-speed switching with a low gate charge.

Their efficiency-boosting design and TO247 package deliver superior thermal performance, while the 3-pin or 4-pin (Kelvin-source pin) options enhance their versatility. These new MOSFETs minimize losses without compromising power handling, making them an intelligent choice for various industrial and telecommunications systems.

Features & Benefits:

  • High switching speed with low gate charge
  • Low switching losses
  • Wide on-resistance selection ranging from 25 mΩ to 100 mΩ
  • Avalanche ruggedness for enhanced durability
  • TO247 3-pin and 4-pin package options
  • Kelvin-source connection for precision (4-pin only)

Original – Micro Commercial Components