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onsemi released the newest generation silicon and silicon carbide hybrid Power Integrated Modules (PIMs) in an F5BP package, ideally suited to boost the power output of utility-scale solar string inverters or energy storage system (ESS) applications. Compared to previous generations, the modules offer increased power density and higher efficiencies within the same footprint to increase the total system power of a solar inverter from 300kW up to 350kW.
This means a one-gigawatt (GW) capacity utility-scale solar farm using the latest generation modules can achieve an energy savings of nearly two megawatts (MW) per hour or the equivalent of powering more than 700 homes per year. Additionally, fewer modules are required to achieve the same power threshold as the previous generation, which can reduce power device component costs by more than 25%.
With solar power having achieved the lowest levelized cost of energy (LCOE), it is increasingly becoming the go-to source for renewable power generation around the world. To compensate for solar power’s variability, utility operators are also adding large-scale battery energy storage systems (BESS) to ensure a stable energy flow to the grid. To support this combination of systems, manufacturers and utilities require solutions that offer maximum efficiency and reliable power conversion. Every 0.1% of efficiency improvement can equate to a quarter of a million dollars in annual operational savings for every one gigawatt of installed capacity.
“As a variable energy source dependent on sunlight, continual advances in increasing system efficiencies, reliability and advanced storage solutions are needed to be able to maintain the stability and reliability of global grids during peak and off-peak power demand,” said Sravan Vanaparthy, vice president, Industrial Power Division, Power Solutions Group, onsemi. “A more efficient infrastructure increases adoption and assures us that, as more solar power generation is built out, less energy is wasted and pushes us forward on a path away from fossil fuels.”
The F5BP-PIMs are integrated with 1050V FS7 IGBT and the 1200V D3 EliteSiC diode to form a foundation that facilitates high voltage and high current power conversion while reducing power dissipation and increasing reliability. The FS7 IGBTs offer low turn-off losses and reduce switching losses by up to 8%, while the EliteSiC diodes provide superior switching performance and lower voltage flicker by 15% compared to previous generations.
These PIMs employ an innovative I-type Neutral Point Clamp (INPC) for the inverter module and a flying capacitor topology for the boost module. The modules also use an optimized electrical layout and advanced Direct Bonded Copper (DBC) substrates to reduce stray inductance and thermal resistance. In addition, a copper baseplate further decreases thermal resistance to the heat sink by 9.3%, ensuring the module remains cool under high operational loads. This thermal management is crucial in maintaining the efficiency and longevity of the modules, making them highly effective for demanding applications that require reliable and sustained power delivery.
Original – onsemi
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PANJIT announced a strategic partnership with National Kaohsiung University of Science and Technology (NKUST). This collaboration bridges the gap between academia and industry, marking a significant step in semiconductor talent development.
Through this partnership, PANJIT and NKUST will establish a comprehensive platform that connects the educational and industrial spheres. PANJIT will offer NKUST students extensive industry insights and internship opportunities, allowing them to apply their theoretical knowledge in real-world settings.
Champion Microelectronic Corp., a member of the PANJIT Group, will collaborate with Professors Jenn-Yu Lin and Cheng-Liang Huang of NKUST’s Department of Microelectronics Engineering and their students on a high-end IC product development project targeting the automotive, industrial control, and automated factory sectors. This initiative aims to meet the growing demand for high-end semiconductors in the global green energy market.
Jason Fang, President of PANJIT Group, stated, “PANJIT is dedicated to building a tier 1 international corporation that our employees are proud of while fostering social engagement. Cultivating talent is a key part of this vision and essential for sustainable industrial development. We believe that a close partnership with academia can drive innovation and accelerate industry progress. In terms of our ESG development strategy, we strive to balance environmental protection, social responsibility, and corporate governance. We are actively engaged in green initiatives, including renewable energy projects, afforestation, forest ecosystem conservation, connecting with local culture and nurturing talent, creating a pleasant work environment for employees, and upholding core values of integrity. More importantly, we aim to pass on PANJIT’s values and technologies to future generations, working together toward a more sustainable future.”
President Ching-Yu Yang of National Kaohsiung University of Science and Technology (NKUST) pointed out that “the establishment of world-class companies in Kaohsiung and the active moves by top universities in the north to enter Kaohsiung are positive signals for the development prospects of the Southern Semiconductor S Corridor. NKUST has long been deeply rooted in southern Taiwan, establishing close cooperative relationships with various industries.
In the trend of rapid industrial transformation towards intelligence and automation, the direction of technological application and talent cultivation must closely align with industrial development trends to strengthen long-term industrial competitiveness. The two key factors in strengthening Taiwan’s industrial competitiveness are technology and talent. Recently, NKUST received a grant of more than NT$100 million from the Ministry of Education to build a “Semiconductor Process Equipment Technology Talent Training Base” in the Department of Microelectronics Engineering of College of Electrical Engineering and Computer Science to strengthen the cultivation of semiconductor technology talents.
Now, the cooperation between NKUST and the PANJIT Group can create mutual benefits in the two critical areas of research/development applications and talent cultivation. ”President Ching-Yu Yang is very much looking forward to deepening the cooperation between the two parties in the future. He stated, “Playing the role of a strong supporter in national industrial research & development and talent cultivation is an unshakable mission for NKUST.”
This collaboration extends beyond talent development to include technology exchange, setting a precedent for future industry-academia partnerships and encouraging more enterprises and institutions to contribute to nurturing the next generation of talent.
Original – PANJIT International
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MCC Semi unveiled a new 950V MOSFET – MCU1K4N95SH. While traditional MOSFETs often include energy losses and slower switching, this new superjunction (SJ) MOSFET features a low gate-to-drain charge, significantly reducing conduction losses and amplifying overall efficiency.
Its superjunction MOSFET technology and on-resistance of only 1.49Ω empower engineers to design for higher voltage ratings without compromising performance. A DPAK (TO-252) package only adds to this MOSFET’s versatility, making it ideal for AC-DC power supplies, LED lighting, charging adapters, solar and energy devices, and other high-voltage applications across multiple industries.
Features & Benefits:
- Superjunction (SJ) MOSFET technology enhances efficiency
- High-voltage rating of 950V is well-suited for demanding applications
- Low gate charge enables faster switching speeds
- High-speed switching capabilities improve overall performance
Original – Micro Commercial Components
