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Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award for Technology and Innovation, for its development of a new type of energy-saving chip based on the innovative semiconductor material silicon carbide (SiC). The Jury of Deutscher Zukunftspreis has announced the three nominated teams in Munich.
A team of developers from Infineon, together with Chemnitz University of Technology, has succeeded in developing the world’s first silicon carbide MOSFET with a vertical channel (trench MOSFET) and innovative copper contacting in the 3300V voltage class. The new SiC modules and the power converters equipped with the modules represent a revolutionary innovation leap in semiconductor technology from conventional silicon to more energy-efficient silicon carbide, which reduces switching losses in high-current applications by 90%.
MOSFETs are electrical switches for a wide range of applications. Trench MOSFETs differ from so-called planar MOSFETs in their cell structure and performance. While the current flow in planar MOSFETs is initially horizontal, trench MOSFETs offer purely vertical channels. This results in a higher cell density per surface area, which in turn significantly reduces the losses in the chip during energy conversion and therefore increases efficiency.
“The transition towards green energy and many other pressing challenges of our time can only be solved with technological progress,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “It is therefore important to promote and reward innovation and make it visible in society. The ‘Deutscher Zukunftspreis’ is the most important national award that is presented with this aim in mind. The nomination is a great honor for us and proof of the successful research and development work at Infineon. Congratulations to all colleagues involved!”
The CoolSiC™ XHP™2 module family enables significant energy savings, for example in industrial power generation in solar parks or wind turbines, in power transmission and, above all, in end consumption, where high energies in the megawatt range are required. A single train with a silicon carbide drive system can save around 300 MWh per year compared to the previous silicon-based solution. This is roughly equivalent to the annual consumption of 100 single-family homes. Together with drive technology manufacturers and rail operators, Infineon is making an important contribution to decarbonization. At the same time, local residents also benefit from the lower noise level of trains with SiC modules when they pass through residential areas.
Through numerous innovative developments in chip processing and design as well as contacting and module technology, the team led by Dr. Konrad Schraml, Dr. Caspar Leendertz (both Infineon) and Prof. Dr. Thomas Basler (Chemnitz University of Technology) has brought the 3300V CoolSiC XHP2 high-performance module to production readiness. With ten times greater reliability against thermomechanical stress and a significantly higher power density compared to silicon modules, the new silicon carbide module can also be used to electrify large drives in diesel locomotives, agricultural and construction machinery, aircraft and ships, which were previously reserved for fossil fuels. The significantly higher switching frequencies permitted by the new module are helpful, as they enable a significant reduction in weight and volume of the power converters in the application.
“This nomination shows that climate change and sustainable resource consumption have become central aspects of our society,” said Dr. Peter Wawer, Division President Green Industrial Power (GIP) at Infineon. “Innovative energy solutions and power semiconductors are a core component in decarbonization and fighting climate change, as the expert jury of Deutscher Zukunftspreis has recognized. I am proud that we at Infineon can make a significant contribution to a green future with pioneering technology.”
Project manager Dr. Konrad Schraml: “For us as a development team, it is a matter close to our hearts to develop innovative chips that contribute to efficient energy consumption and thus also to green mobility on our planet. This nomination is a great recognition for my team, whose tireless efforts, expertise and passion for sustainability have made the technology breakthrough in silicon carbide possible.”
On November 27, Federal President Frank-Walter Steinmeier presents the Deutscher Zukunftspreis to the winning team in Berlin.
Original – Infineon Technologies
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JEDEC Solid State Technology Association announced the publication of JEP200: Test Methods for Switching Energy Loss Associated with Output Capacitance Hysteresis in Semiconductor Power Devices. Developed jointly by JEDEC’s JC-70.1 Gallium Nitride and JC-70.2 Silicon Carbide Subcommittees, JEP200 is available for free download from the JEDEC website.
Proliferation of soft switching power conversion topologies brought about the need to accurately quantify the energy stored in a power device’s output capacitance because the energy impacts efficiency of power converters. JEP200, developed in collaboration with academia, addresses the critical power supply industry need to properly test and measure the switching energy loss due to the output capacitance hysteresis in semiconductor power devices and details tests circuits, measurement methods, and data extraction algorithms. The document applies not only to wide bandgap power semiconductors such as GaN and SiC, but also silicon power transistors and diodes.
“Professionals in high-frequency power conversion systems have long sought a standardized approach to testing new switching energy losses,” said Dr. Jaume Roig, Member of Technical Staff, onsemi and Vice Chair of the JC-70 Committee. “This document now provides helpful guidance on testing energy losses related to output capacitance hysteresis caused by displacement currents. With this clarity, system optimization can proceed more accurately.”
“JEDEC’s JC-70 committee has the expertise necessary to meet the demands of the entire power semiconductor industry, and the development of JEP200 demonstrates how the JEDEC process enabled the committee to swiftly respond to an industry need,” said John Kelly, JEDEC President. “JEP200 encompasses GaN, SiC, and Si power devices, helping the industry navigate design challenges caused by the growing number of new power conversion topologies.”
Original – JEDEC
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Infineon Technologies AG introduced its new StrongIRFET™ 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment. Optimized for high robustness and ease-of-use, the new power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications, enabling high design flexibility.
Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS).
The StrongIRFET 2 30 V technology offers up to a 40 percent R DS(on) improvement and up to a 60 percent reduction in Q G compared to the previous generation of StrongIRFET devices. This translates into higher power efficiency for improved overall system performance while providing an excellent robustness.
The new power MOSFETs also ensure an easy design-in and provide simplified product services. The product family’s excellent price/performance ratio makes it an ideal choice for designers looking for convenient selection and purchasing.
The StrongIRFET 2 power MOSFETs in 30 V are available now in a TO-220 package. By the end of 2024, the portfolio will be available in a wider range of industry-standard packages and pin-out options, including to DPAK, D²PAK, PQFN and SuperSO8.
Original – Infineon Technologies
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Wolfspeed, Inc. unveiled a silicon carbide module designed to transform the renewable energy, energy storage, and high-capacity fast-charging sectors through improved efficiency, durability, reliability, and scalability. The 2300V baseplate-less silicon carbide power modules for 1500V DC Bus applications were developed and launched utilizing Wolfspeed’s state-of-the-art 200mm silicon carbide wafers.
Wolfspeed also announced that it is partnering with EPC Power, a premier North American utility-scale inverter manufacturer. EPC Power will be employing the Wolfspeed® modules in utility-grade solar and energy storage systems, which offer a scalable high-power conversion system and high-performance controls and system redundancy.
“The solar and energy storage market remains among the fastest-growing segments of the renewable energy industry. As the pioneers of silicon carbide, we are driven to create solutions that will open the door to a new era of modern energy,” said Jay Cameron, Wolfspeed Senior Vice President and General Manager, Power. “Energy efficiency, reliability, and scalability are top of mind for our customers, such as EPC Power, who recognize the substantial advantages Wolfspeed’s silicon carbide brings to the table.”
“Silicon carbide devices open the door to a step-change in inverter performance and reliability. With our commitment to extreme reliability, performance, and security in our new ‘M’ inverter while also forging a deep commercial relationship with key suppliers, Wolfspeed was the obvious choice,” said Devin Dilley, President and Chief Product Officer, EPC Power.
With mounting global investment in renewable energy, the solar energy market is estimated to reach a $300 billion market capitalization by 2032. According to the International Energy Agency (IEA), 2024-25 will see the highest energy demand growth rate since 2007, reinforcing the need for efficient and reliable clean power. Wolfspeed’s silicon carbide solution helps bridge this crucial gap, supporting the next era of modern energy technologies while reinforcing U.S. clean energy manufacturing leadership.
Cameron continued, “This platform further validates our investments in 200mm wafer technology and production as the potential of silicon carbide continues to be recognized by industry leaders across all mission-critical applications.”
Original – Wolfspeed
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Maspower Semiconductor introduced the MSG120T65HQC1, a cutting-edge Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency and high-power applications. With its exceptional performance characteristics and robust design, the MSG120T65HQC1 sets a new benchmark in the power electronics industry.
The MSG120T65HQC1 boasts a low collector-emitter saturation voltage (VCE(sat)) of 1.8V at 120A, ensuring high-speed switching and superior system efficiency. Its tight parameter distribution ensures consistent performance across different operating conditions, making it ideal for demanding applications.
With a continuous collector current rating of 180A at 25°C and 120A at 100°C, the MSG120T65HQC1 is well-suited for high-current applications. Its pulsed collector current capability of up to 360A and diode maximum forward current of 480A further enhance its versatility and reliability.
The device features soft current turn-off waveforms, reducing electromagnetic interference (EMI) and improving overall system performance. This makes it an excellent choice for noise-sensitive applications.
Operating and storage temperatures ranging from -55°C to +175°C ensure reliable performance in extreme environments. The maximum lead temperature for soldering purposes is 300°C, facilitating easy and safe installation.
The MSG120T65HQC1 exhibits low switching losses, with turn-on loss (Eon) of up to 1.2mJ and turn-off loss (Eoff) of up to 2mJ. This translates into improved system efficiency and reduced heat generation.
The MSG120T65HQC1 is available in the TO-247Plus package, which offers excellent thermal performance and mechanical stability. Its low thermal resistance values ensure efficient heat dissipation, maintaining the device’s temperature within safe operating limits.
Applications:
The MSG120T65HQC1 is ideal for a wide range of applications, including but not limited to:
- Traction Inverters for HEV/EVs: Its high-current handling capability and low VCE(sat) make it an excellent choice for electric and hybrid electric vehicle (HEV/EV) traction inverters.
- Auxiliary DC/AC Converters and UPS Systems: The device’s high-efficiency and reliable switching characteristics make it perfect for auxiliary converters and uninterruptible power supplies (UPS).
- Motor Drivers: Its robust design and superior performance parameters make the MSG120T65HQC1 an ideal solution for motor drives, enhancing efficiency and reducing operating costs.
- Other Soft-Switching Applications: The device’s soft-switching capabilities make it suitable for a variety of noise-sensitive and high-performance applications.
With its superior performance, high efficiency, and robust design, the MSG120T65HQC1 from Maspower Semiconductor is a game-changer in the power electronics industry. Ideal for a wide range of high-power and demanding applications, this IGBT solution is poised to revolutionize the way we think about power conversion.
Original – Maspower Semiconductor
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Shin-Etsu Chemical Co., Ltd. has created a 300-mm (12-inch) QSTTM substrate, which is a substrate dedicated to GaN epitaxial growth, and recently started supplying samples.
Shin-Etsu Chemical has sold 150-mm (6-inch) and 200-mm (8-inch) QSTTM substrates and GaN on QSTTM epitaxial substrates of each diameter. Meanwhile, the company worked on further increasing the diameter in response to strong customer demand and successfully developed a 300-mm (12-inch) QSTTM substrate. GaN device manufacturers cannot benefit from increasing the diameter of materials because of the lack in large-diameter substrate suitable for GaN growth, despite the fact that they can use the existing Si production line for GaN.
This 300-mm QSTTM substrate enables GaN epitaxial growth without warping or cracks, which was unattainable on Si substrates, thus significantly reducing device costs. In addition to the enhancement of facilities for 150-mm and 200-mm QSTTM substrates already in progress, Shin-Etsu Chemical will work on mass-producing 300-mm QSTTM substrates.
Since QSTTM substrates have the same coefficient of thermal expansion as that of GaN, it is possible to constrain warping and cracks of GaN epitaxial layer on QSTTM substrate of the SEMI standard thickness. This substrate material allows for high-quality and thick GaN epitaxial growth with a large diameter. Leveraging this feature, many customers are evaluating QSTTM substrates and GaN on QSTTM epitaxial substrates for power devices, high-frequency devices, and LEDs. Despite the challenging business environment, customers have entered the development phase toward practical to address the recently increasing interest in power devices, including power supplies for data centers.
The addition of the 300-mm QSTTM substrate to the lineup of the 150-mm and 200-mm can significantly accelerate the spread of GaN devices. Shin-Etsu Chemical is committed to contribute to the realization of a sustainable society where energy can be used efficiently through the social implementation of GaN devices.
Original – Shin-Etsu Chemical
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ROHM and United Automotive Electronic Systems Co., Ltd., (UAES), a leading Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices.
Since 2015, ROHM and UAES have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. This partnership deepened in 2020 with the establishment of the joint SiC technology laboratory at the UAES headquarters in Shanghai, China. And in 2021 ROHM’s advanced SiC power devices and peripheral components were highly evaluated by UAES, resulting in ROHM being selected as a preferred supplier.
The close long-standing technical partnership has led to the production and adoption of numerous automotive products equipped with ROHM SiCs, such as onboard chargers and inverters for electric vehicles. SiC power devices play a crucial role in enhancing the efficiency and performance of a variety of systems, contributing to extending the cruising range and reducing battery size.
This long-term supply agreement ensures UAES sufficient access to SiC power devices to meet the growing demand for SiC-based inverter modules, which have been supplied to customers since November 2023. Going forward, both companies will deepen their collaboration, contributing to technological innovation in the automotive sector by accelerating the development of cutting-edge SiC power solutions for EVs.
- Guo Xiaolu, Deputy General Manager, United Automotive Electronic Systems Co., Ltd.
‘The growing popularity of electric vehicles in the Chinese market has made the adoption and integration of power semiconductors like SiC increasingly important. ROHM, a world-renowned semiconductor manufacturer, is a pioneer and market leader in SiC power devices. Since 2015 we have been actively engaged in technical exchanges and highly value ROHM’s proposed solutions encompassing devices and peripheral components. Choosing ROHM as our long-term supplier of SiC chips guarantees a stable supply for future mass production. We appreciate ROHM’s past efforts and look forward to building a long-term collaborative relationship, with this agreement serving as a new starting point.’
- Tsuguki Noma, Corporate Officer and Director of the Power Device Business Unit, ROHM
‘We are very pleased to have signed a long-term supply agreement with UAES, a valued partner with whom we have built a strong cooperative relationship over the years. As a leading Tier 1 manufacturer in China, UAES is at the forefront of advanced application development. To meet the need for SiC power devices that improve efficiency in the rapidly expanding electric vehicle market, ROHM has established a leading development and manufacturing system within the SiC industry. We believe that by working together, both companies can provide cutting-edge, high performance, high quality automotive applications. Moving forward, we will continue to drive technological innovation in electric vehicles together with UAES by offering power solutions centered on SiC.’
History of Technical Collaboration Between ROHM and UAES
- 2015 Initiated technical exchange
- 2020 Established a joint SiC technology laboratory
- 2020 Began mass production of automotive products equipped with ROHM SiC power devices
- 2021 ROHM recognized as a preferred supplier for SiC power solutions
- 2024 ROHM and UAES sign a long-term supply agreement for SiC power devices
Original – ROHM
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Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. announced that they have obtained all necessary approvals from relevant authorities and injected capital to officially establish the VisionPower Semiconductor Manufacturing Company Pte Ltd (VSMC) joint venture. The company will now proceed with the planned construction of VSMC’s first 300mm wafer manufacturing facility.
VIS and NXP announced on June 5 this year plans to establish the VSMC joint venture in Singapore to build a 300mm wafer fab with a total investment of approximately $7.8 billion.
“We express our gratitude to the governments and regulatory authorities of Taiwan, Singapore, and other countries for their strong support, which enabled us to obtain the necessary approvals and proceed with this significant investment as scheduled. VSMC’s first 300mm fab is a concrete manifestation of VIS’ commitment to meeting customer demands, expanding our manufacturing capacity, and diversifying our global manufacturing bases.”VIS Chairman Leuh Fang
“We thank all the relevant government agencies for moving with speed to support the VSMC joint venture project. The VSMC fab perfectly aligns with our hybrid manufacturing strategy and helps ensure we have a manufacturing base which delivers competitive cost, supply control and geographic resilience to support our long-term growth objectives.”NXP President and CEO Kurt Sievers
VSMC will begin construction on its initial phase of the wafer fab in the second half of this year, with initial production slated to begin in 2027. Upon the successful ramp of the initial phase, a second phase will be considered and developed pending commitments by VIS and NXP.
The 300mm fab will support 130nm to 40nm mixed-signal, power management and analog products, targeting the automotive, industrial, consumer and mobile end markets. The related technology license and technology transfer will be from TSMC, and a Technology License Agreement with TSMC has been signed.
With an expected output of 55,000 300mm wafers per month in 2029, the joint venture will create approximately 1,500 jobs while contributing to the development of the upstream and downstream supply chains, contributing to Singapore and the global semiconductor ecosystem.
Original – NXP Semiconductors
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Littelfuse, Inc. announced the launch of the IX4341 and IX4342 dual 5 ampere low-side MOSFET gate drivers. These gate drivers are specifically designed for driving MOSFETs and complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input versions, providing customers with a comprehensive range of options.
The IX4341 and IX4342 drivers’ short propagation delay times of 16 nanoseconds and brief rise and fall times of 7 nanoseconds make them ideal for high-frequency applications. Additionally, for higher current requirements, electronics designers can parallel the two channels of the IX4340 and IX4341 devices to form a single 10 A driver, providing flexibility and scalability.
A notable feature of the IX434x drivers is their compatibility with TTL and CMOS logic inputs, enabling direct interfacing with most controllers. Furthermore, each output has an independent ENABLE function and under-voltage lockout circuitry (UVLO) to ensure reliable and safe operation. In case of eventual insufficient supply voltage, the gate driver output is asserted low, turning the external power device off.
The IX4341 and IX4342 dual 5 A low-side gate drivers find applications in various markets, including:
- general industrial and electrical equipment,
- appliances,
- building solutions,
- data centers,
- energy storage, and
- renewable energy.
These low-side MOSFET gate drivers are ideally suited for numerous industrial applications such as:
- switch-mode power supplies,
- DC-DC converters,
- motor controllers, and
- power converters.
The IX434x devices are available in standard 8-pin SOIC, thermally enhanced 8-pin SOIC, and 3×3 mm² MSOP packages, offering customers a range of options to suit their specific needs.
“This new series of dual five-ampere low-side gate drivers simplify circuit design with its high level of integration and compatibility with various logic input versions,” said June Zhang, Product Manager, Integrated Circuits Division, Semiconductor Business Unit, at Littelfuse. “With these drivers, customers can expect enhanced performance and protection for their power devices.”
The IX434x dual 5 A low-side gate drivers find applications in various industries, including general industrial and electrical equipment, appliances, building solutions, data centers, energy storage, and renewable energy.
They serve as a direct drop-in alternative to similar available drivers, providing customers with industry-standard options to meet their supply demands.
Original – Littelfuse
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Navitas Semiconductor announced the release of a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.
Navitas’ proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature and delivers high-speed, cool-running operation for electric vehicle (EV) charging, traction, and DC-DC conversion. With case temperatures up to 25°C lower than conventional devices, Gen-3 Fast SiC offers an operating life up to 3x longer than alternative SiC products, for high-stress EV environments.
Gen-3 Fast MOSFETs are optimized for the fastest switching speed, highest efficiency, and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas’ dedicated EV Design Center has demonstrated leading edge OBC system solutions up to 22 kW with 3.5 kW/liter power density, and over 95.5% efficiency.
400 V-rated EV battery architectures are served by the new 650 V Gen-3 Fast MOSFETs featuring RDS(ON) ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems.
Both 650 and 1,200 V ranges are AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This enables very high-power density solutions, while minimal package inductance of only 2 nH ensures excellent fast-switching performance and lowest dynamic package losses.
The automotive-qualified 650 V and 1200 V G3F SiC MOSFET family in D2PAK-7L and TOLL surface mount packages are released and available immediately for purchase.
Original – Navitas Semiconductor
