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LATEST NEWS2 Min Read
Axcelis Technologies, Inc. will be a top-level Platinum Sponsor at the International Conference on Ion Implantation Technology 2024 (IIT 2024) taking place September 23-26 at the Toyama International Conference Center in Japan.
IIT 2024 is the 24th Conference in the biennial series focused on the major challenges in current and emerging technologies related to implant/doping and annealing processes, device applications, equipment, metrology and modeling.
At the event, Axcelis will host a company exhibit and the company’s technologists and collaborators will present on nine topics:
- Performance of an Aluminum Sputtering Source for High Current Doping in Power Devices
- Energetic and Surface Metals Characterization of Purion XEmax With and Without Boost™ Technology Using Vapor Phase Decomposition-Inductively Coupled Plasma Mass Spectrometry
- Radiation Characterization and Mitigation of High Energy H+ Beams
- Wear-Resistant Surface Coatings for Long Electrostatic Chuck Life and Stable Performance
- Self-contained Predictive System Diagnostic Sensors
- Comparison of Arsenic and Antimony Dopant Distribution Profiles of Very High Energy Implantations
- New Challenges and Opportunities in Wide Bandgap Materials with Ion Implantation and Annealing Co-Optimization
- Dual Cathode Ion Source for Axcelis’ High Energy Implanters
- Low Metals Ion Source
President and CEO of Axcelis Technologies Russell Low said, “We’re excited to be a Platinum Sponsor of IIT 2024, one of the most important technology forums in the ion implantation industry. We’re especially pleased to be participating at the event in Japan this year, which is a very important market for Axcelis. Axcelis recently opened several new Service Centers in Japan to support our expanding customer base. We remain focused on growing our global market share by providing customers the most innovative, enabling implant technology and support solutions to ensure their success.”
For more information on the event, or to register, visit the conference website at https://smartconf.jp/content/iit2024.
Original – Axcelis Technologies
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MCC Semi rolled out three new 600V MOSFETs that go beyond high performance. Designed with an integrated fast recovery diode, these advanced components help solve the challenges engineers face when trying to maximize efficiency while minimizing power losses and heat generation.
Ideal for high-voltage applications, MSJWFR60N60, MCTK075N60FH, and MCTK105N60FH feature on-resistance in the sub-100mΩ range — with options as low as 30mΩ — to significantly reduce conduction losses and ensure efficient power delivery.
A low gate charge only adds to their excellence, especially in high-frequency applications where response times are critical. Available in a through-hole TO-247 package and space-saving SMD TOLL-8L options with a Kelvin source connection, these MOSFETs offer a versatile solution for enhancing overall system performance.
Improve reliability for various applications, such as power supplies, AC-DC converters, motor drives, and renewable energy systems, with these low RDS(on) semiconductors from MCC.
Features & Benefits:
- Superjunction MOSFET technology: Enhances efficiency and reduces power losses
- Low on-resistance: Minimizes conduction losses for improved performance
- Low conduction losses: Ensures greater efficiency in power applications
- Low gate charge: Facilitates faster switching and reduced energy consumption
- Integrated fast recovery diode: Provides rapid recovery for better switching performance
- High-speed switching: Supports high-frequency operations, perfect for modern applications
- Versatile packages: Enables design flexibility with through-hole (TO-247) and SMD with Kelvin Source (TOLL-8L-KS) options
Original – Micro Commercial Components
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / WBG2 Min Read
Power Master Semiconductor has released a new package portfolio, TO leadless (TOLL) package for 650V eSiC MOSFET series to meet the increasing demands for high power density and efficiency with superior switching performance in various applications such as AI data center servers, telecom infrastructure, flat panel display power, ESS, and battery formations.
Recently, the rapid growth of artificial intelligence (AI) is expected to drive continued strong data center demand. AI datacenters rely on GPUs that consume 10 to 15 times more power than traditional CPUs. SiC MOSFETs in TOLL package are an optimal solution for the rapidly expanding AI applications today.
The TOLL package has a footprint of 9.9mm x 11.7mm, reducing the PCB area by 30% compared to the D2PAK 7-lead package. Moreover, with a thickness of 2.3mm, it has 60% less height than the D2PAK 7-lead package.
The TOLL offers superior thermal performance and low package inductance (2nH) compared to D2PAK 7-lead package. Kelvin source configuration lowers gate noise and reduces turn-on loss by 60% compared to same device without Kelvin source configuration, enabling higher frequency operation and improved power density. The new PCT65N27M1 has a VDSS rating of 650 V with a typical RDS(ON) of 27mΩ and a maximum drain current (ID) of 84 A.
Power Master Semiconductor’s products in TOLL package has special grooves in the gate and source pins to enhance the performance of the solder joint and offers Moisture Sensitivity Level 1 (MSL 1).
Original – Power Master Semiconductor