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Affordability combined with high performance and efficiency is the key to making electric mobility accessible to a broader market. That’s why Infineon Technologies AG is introducing the HybridPACK™ Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector.
The HybridPACK Drive G2 Fusion is the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies. This cutting-edge solution provides an ideal balance between performance and cost efficiency, giving more choice in the optimization of inverters.
One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. For example, system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area.
“Our new HybridPACK Drive G2 Fusion module underlines Infineon’s innovation leadership in the automotive semiconductor industry,” said Negar Soufi-Amlashi, Senior Vice President & General Manager High Voltage at Infineon’s Automotive division. “Addressing the demand for greater e-mobility range, this technological breakthrough smartly combines silicon carbide and silicon. Integrated in a well-introduced module package footprint it offers compelling cost-performance ratio over pure silicon carbide modules without adding system complexity for automotive system suppliers and vehicle manufacturers.”
HybridPACK Drive G2 Fusion expands Infineon’s HybridPACK Drive power module portfolio and can be quickly and easily integrated in vehicle components or modules without requiring complex adjustments or configurations. The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class. It ensures high reliability over the entire temperature range from -40 °C to +175 °C and improved thermal conductivity.
The unique properties of Infineon’s CoolSiC™ technology and its silicon IGBT EDT3 technology with very fast turn-on enable the use of a single gate driver or dual gate drivers. This allows easy re-design from full silicon or full SiC based inverters to a fusion inverter. Generally, Infineon’s holistic expertise in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers as well as sensors enables premium products with cost savings at system level. One example is the integration of Swoboda or XENSIV™ Hall sensors in the HybridPACK Drive package for more precise and efficient motor control.
Infineon will showcase the new HybridPACK Drive G2 Fusion at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).
Original – Infineon Technologies
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The U.S. Department of Commerce and Wolfspeed announced they have signed a non-binding preliminary memorandum of terms (PMT) for up to $750 million in proposed direct funding under the CHIPS and Science Act. In addition, a consortium of investment funds led by Apollo, The Baupost Group, Fidelity Management & Research Company and Capital Group have agreed to provide Wolfspeed an additional $750 million of new financing.
Together these investments support Wolfspeed’s long-term growth plans and bolster domestic production of silicon carbide to power clean energy systems underpinning electric vehicles (EVs), artificial intelligence (AI) data centers, battery storage and more. In addition, Wolfspeed expects to receive $1 billion of cash tax refunds from the advanced manufacturing tax credit under the CHIPS and Science Act (section 48D), giving the company, in total, access to up to $2.5 billion of expected capital to support the expansion of silicon carbide manufacturing in the United States.
Wolfspeed is the world’s largest producer of silicon carbide technology, pioneering the technology more than 35 years ago on the campus of North Carolina State University. Since that time, Wolfspeed has become the global leader in silicon carbide technology, one of the fastest growing components of the broader semiconductor industry.
- Silicon carbide is a superior alternative to silicon for high power applications – such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI and cryptocurrency data centers – that unlocks improved performance and lower system costs.
- Notably, the importance of bolstering the domestic production of silicon carbide has been recognized across multiple federal agencies; the Department of Energy denoted it as one of 17 “critical materials” with a high risk of supply disruption that are integral to clean energy technologies, while the Department of Commerce recognizes silicon carbide semiconductors as important to national security.
- As the U.S. and the world pursue more efficient and environmentally friendly solutions to meet the world’s ever-increasing need for high-voltage energy products, it is crucial that the U.S. continue to make strategic investments to cement its technological leadership position, while continuing to spur American innovation in critical technologies.
Wolfspeed CEO, Gregg Lowe, said, “To reach this milestone under the U.S. CHIPS and Science Act is an incredible achievement in Wolfspeed’s long-term growth strategy, and we believe today’s announcement is a testament to the market-leading quality of Wolfspeed products and significance of Wolfspeed to broader U.S. economic and national security interests. This support galvanizes our ability to expand domestic manufacturing, accelerate innovation in next-generation semiconductor technology, and meet the increasing global demand for silicon carbide. As a key player in the semiconductor industry, this proposed investment will enable us to solidify our leadership position with a first-of-its-kind 200mm silicon carbide manufacturing footprint in upstate New York and central North Carolina, while contributing to the resilience and competitiveness of the U.S. supply chain. It’s not just about growth for Wolfspeed—it’s about driving technological advancement that powers the future.
“Silicon carbide is already enabling superior energy efficiency across mission-critical industries of the future like electric vehicles, e-mobility, solar and wind energy, industrial power applications, and AI data centers. While EVs have been the driver of silicon carbide adoption thus far, we believe the use cases for our technology are expansive and will only continue to grow as more and more industries find themselves needing to solve for the same power loss, system size, and system cost challenges as automakers,” concluded Lowe.
“Artificial intelligence, electric vehicles, and clean energy are all technologies that will define the 21st century, and thanks to proposed investments in companies like Wolfspeed, the Biden-Harris Administration is taking a meaningful step towards reigniting U.S. manufacturing of the chips that underpin these important technologies,” said U.S. Secretary of Commerce Gina Raimondo. “Because of the Biden-Harris Administration’s CHIPS and Science Act, the United States is building and fortifying our semiconductor manufacturing capabilities to serve our economic and national security interests while creating jobs and economic opportunities for communities across the country.”
“Wolfspeed is leading the pack in bringing semiconductor manufacturing back to America. This major multibillion dollar investment powered by my CHIPS & Science Law will accelerate the ongoing expansion in the Mohawk Valley, helping speed up hiring of hundreds of new good-paying jobs that Wolfspeed is creating in the Mohawk Valley and providing long term work for the Marcy fab to succeed well into the future, further establishing Upstate NY as a global hub for chip manufacturing,” said Senator Chuck Schumer. “From electric vehicles to artificial intelligence, this critical technology relies on the silicon carbide chips that Wolfspeed will manufacture and perfect in the Mohawk Valley. Today’s massive investment will make America’s economy and our national security stronger as Wolfspeed helps us write the next chapter of America’s resurgence as the leader in the semiconductor industry, with the Mohawk Valley as the beating heart.”
“Wolfspeed is a homegrown semiconductor innovator and manufacturer creating great jobs in North Carolina, and it’s important they received this major grant under the CHIPS and Science Act,” said North Carolina Governor Roy Cooper. “Thanks to this landmark legislation from the Biden-Harris Administration and our great workforce, we will continue to see good paying jobs coming to North Carolina.”
“This $750 million federal investment is a testament to Wolfspeed’s unique leadership in silicon carbide semiconductor manufacturing, and I applaud Wolfspeed’s continued commitment to North Carolina,” said Senator Thom Tillis. “I was proud to vote for the CHIPS and Science Act to provide the funding for this investment in North Carolina and to support our economic and national security.”
“North Carolina continues to be a leader in cutting-edge manufacturing that is vital to our country’s national and economic security,” said Senator Ted Budd. “This new Wolfspeed site in Siler City will bring good-paying jobs to the area and is an important first step in making sure America has secure supply chains for critical semi-conductors.”
“We are pleased to expand our investment in Wolfspeed by providing additional capital in support of the company’s build out of its leading silicon carbide capabilities,” said Apollo Partner Joseph Jackson. “We believe Wolfspeed is at the forefront of a critical transformation in sustainable transportation and ensuring that the company has durable capital access to complete its expansion plans will help solidify its leadership in this space. Along with our lending consortium, which includes multiple funds that also own substantial equity stakes in the company, we believe this strategic investment will drive significant long-term value while advancing key tenets of the CHIPS and Science Act.”
These proposed funds, which are expected to be received upon milestone achievements in the coming years, would enable Wolfspeed to complete its multi-billion-dollar greenfield U.S. capacity expansion plan, which consists of the largest and most advanced 200mm silicon carbide footprint in the world. In addition to the proposed direct funding, Wolfspeed intends to benefit from the U.S. Treasury Department Investment Tax Credit of up to 25% of the qualified capital expenditures primarily related to its construction and installation of equipment at The John Palmour Manufacturing Center for Silicon Carbide in Siler City, NC and completion of the Mohawk Valley Fab M-Line West Expansion in Utica, NY.
This multi-billion-dollar investment will bolster Wolfspeed’s balance sheet and will help to fuel significant growth through cash generation and accelerate its long-term profitability goals.
Summary of the PMT
The PMT outlines key terms for a CHIPS incentive award, including the proposed amount and form of the award, and provides that the disbursement of funds will be conditioned upon the achievement of certain operational and construction milestones and other requirements.
The PMT includes an obligation for Wolfspeed to raise an aggregate of $750 million in debt financing over three tranches through the issuance of senior notes under an amended and restated indenture. Wolfspeed and its lenders, led by Apollo funds, have reached an agreement for this additional financing, including $250 million to be available within 10 business days, and have agreed to certain intercreditor terms with the CHIPS Program Office as described in the PMT.
Together, the PMT and the agreement with lenders also requires:
- Wolfspeed to undertake further actions with respect to its capital structure, including (a) restructuring or refinancing its outstanding 2026, 2028 and 2029 convertible notes at specified intervals prior to their respective maturity dates, (b) deferring a total of $120 million in cash interest payments due prior to June 30, 2025 under an unsecured customer refundable deposit agreement, and (c) raising up to $300 million of additional capital from non-debt sources over the next 12 months.
- In addition, Wolfspeed has agreed with its lenders to certain revisions in the terms of the senior notes, including revisions to the interest rate applicable to the senior notes, as described in the Form 8-K filed today with Securities and Exchange Commission (SEC).
The PMT provides that the award is subject to due diligence and the negotiation and signing of a definitive direct funding agreement with the Department of Commerce and the negotiation and signing of an intercreditor agreement between the Department of Commerce and the Company’s lenders, which may contain different or additional conditions not contained in the PMT. Additional terms of the PMT were not disclosed.
Original – Wolfspeed
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Cambridge GaN Devices (CGD) is exhibiting at the prestigious IEEE Energy Conversion Congress and Expo on Booth 319. Now in its 16th year, ECCE 2024 is sponsored by both the IEEE Industrial Application Society (IAS) and IEEE Power Electronics Society (PELS). The event continues to grow, both in attendance and content.
ECCE 2024 will feature two-page Late Break Research Briefs, Post-Journal paper presentations, and the standard technical papers. It will also offer special sessions on emerging technologies and industry-oriented topics, and of course, tutorials, which have become a staple element of the ECCE technical program.
Andrea Bricconi | Chief Marketing Officer, CGD
“It is important for CGD that we spread our message that GaN is the future of power electronics, in terms of energy efficiency, power density and smallest carbon footprint, and that our ICeGaN® GaN power ICs are the most rugged and easiest-to-use devices available. Therefore we are delighted to exhibit for the first time at ECCE.”
At the event, CGD will show a number of demos that employ ICeGaN, including:
- 3 kW PFC reference design
- QORVO motor drive evaluation kit developed in partnership with CGD and utilising ICeGaN
- Slim 100W adaptor
- Half-bridge, full-bridge as well as ICeGaN in parallel evaluation boards
- 300W PFC+LLC
- Single leg of a 3-phase automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN)
- ICeGaN vs discrete GaN circuits comparison in half bridge (daughter cards) demo board
Original – Cambridge GaN Devices
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NOVOSENSE Microelectronics, a semiconductor company specializing in high-performance analog and mixed-signal chips, is set to present its latest innovations in automotive and industrial control technologies at electronica 2024, Munich.
Attendees to the show are invited to visit booth #450 in Hall B5 to explore NOVOSENSE’s state-of-the-art advancements in intelligent vehicles, electrification, industrial control, renewable energy, and power supply solutions.
NOVOSENSE’s CTO, Yun SHENG, stated,”As intelligent vehicles become increasingly prevalent in the automotive industry, there is a growing demand for innovative solutions that improve safety, efficiency, and the overall driving experience. In response to this dynamic market, NOVOSENSE is proud to present our latest advancements, including multi-channel half-bridge drivers, programmable stepper motor drivers, and compact temperature and humidity sensors specifically designed for the next generation of automotive applications.”
These products include:
- The 40V multi-channel half-bridge driver NSD830x supports multiple load types and has been engineered for HVAC and climate control.
- The programmable stepper motor driver NSD8381 features sophisticated capabilities for adaptive headlights and central thermal management systems, ensuring exceptional performance and reliability.
- The compact high-precision temperature and humidity sensor NSHT30 integrates a capacitive RH sensor, CMOS temperature sensor, and signal processor, supporting intelligent in-vehicle systems.
- The NSOPA9xxx series includes high-voltage operational amplifiers suitable for automotive and industrial applications, including OBC/DC-DC converters and traction inverters.
NOVOSENSE will also highlight a comprehensive selection of sensors and drivers designed for next-generation vehicles and industrial systems, emphasizing high-performance and compact designs.
- The NSI22C1x series of isolated comparators enhance the reliability of industrial motor drives by supporting overvoltage, overtemperature, and overcurrent protection.
- The NSIP605x series of transformer drivers provides cost-effective adaptability while ensuring superior EMI and ESD performance for streamlined system design.
- The NSI7258 solid state relays featuring a 1700 V withstand voltage, support high-voltage measurement and insulation monitoring across industrial and automotive applications.
- Compliant with AEC-Q1000 reliability requirements, the NSM2311 delivers a fully integrated high-isolation current sensing solution with low primary impedance and high continuous current capacity.
- Designed for high reliability in switching power supplies, the NSI6801 outperforms traditional optocoupler gate drivers, making it an ideal choice for photovoltaic inverters and motor drive systems.
Electronica will be held at the Messe München in Munich, Germany, from November 12-15, 2024. NOVOSENSE is in Hall B5, booth 450.
Original – NOVOSENSE Microelectronics
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Navitas Semiconductor announced GaNSlim™, a new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance.
GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with an ultra-low startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup.
Integrated features such as loss-less current sensing eliminate external current sensing resistors and optimize system efficiency and reliability. Over-temperature protection ensures system robustness and auto sleep-mode increases light and no-load efficiency. Autonomous turn-on/off slew rate control maximizes efficiency and power density while reducing external component count, system cost and EMI.
GaNSlim features a patented, 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc.
“Our GaN focus is on integrated devices that enable high-efficiency, high-performance power conversion with the simplest designs and the shortest possible time-to-market,” says Reyn Zhan, Sr. Manager of Technical Marketing. “Our new GaNSlim portfolio – built on integration, ease-of-use, and low-cost manufacturing methods, – continues to grow the customer pipeline with over 50 new projects already identified. GaNSlim increases our GaN addressable market by enabling lower system costs compared to silicon designs for many applications, targeting applications under 500 W across mobile, consumer and home appliance.”
Devices in the NV614x GaNSlim family are rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.
As with other Navitas GaN ICs, GaNSlim devices are supplied with an industry-leading twenty-year warranty, while demo boards for QR flyback, single-stage PFC, boost PFC plus QR flyback and TV power supply designs allow for rapid evaluation and selection of the optimum device for a given application.
Original – Navitas Semiconductor
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Infineon Technologies AG is intensifying its collaboration with suppliers to further reduce CO 2 emissions along the whole supply chain. Infineon hosted its first ever Supplier Sustainability Summit to further stimulate collaboration and incentivize and support suppliers to accelerate their decarbonization journeys. The virtual event brought together about 100 top semiconductor industry suppliers.
“In order to meet our ambitious targets, we need you, our suppliers,” said Elke Reichart, Member of the Board and Chief Digital and Sustainability Officer at Infineon, during her welcome message. “Infineon’s scope 3 emissions make up the lion’s share of our footprint, especially the materials we source from our suppliers. Therefore, we very much look forward to joining forces with you. Together, we can stimulate and implement decarbonization strategies even better.”
Collaboration with suppliers is a fundamental part of Infineon’s overall sustainability strategy. The company has already made significant progress on its way to reaching climate neutrality by 2030; since 2019 Infineon has halved its CO 2 emissions (scope 1 and 2) while doubling revenue at the same time. In December 2023, Infineon added a commitment to setting a science-based target that includes the supply chain (scope 3). The procurement team is actively working with over 100 suppliers, engaging them to define their own science-based targets and implement appropriate reduction measures.
The Supplier Sustainability Summit was an excellent opportunity for Infineon to share learnings from its own climate strategy and journey and to facilitate exchange of best practices among suppliers. For instance, experts from the Infineon electricity procurement team gave insights from their hands-on experience in achieving 100 percent renewable electricity by 2025; whereas two suppliers shared their expertise in effectively setting science-based targets. The topic was deepened in a panel discussion with Infineon leaders and an expert from the CDP (formerly the Carbon Disclosure Project) that offered further practical advice to attendees.
Infineon’s Green Award recognizes and honors suppliers who demonstrated outstanding environmental commitment and advancements throughout the past year. The “Best Performance Award” went to Applied Materials Inc. for its ambitious climate strategy, including a 1.5°C science-based target and the company’s innovative “Xchange” program. As part of the program Infineon is directly collaborating with Applied Materials to increase resource efficiency and reduce emissions. The program enables take-back and refurbishment of spare parts for complex semiconductor equipment, thereby building on the circular economy to create environmental and business benefits for both parties.
The “Best Improvement Award” winner is Sumco Corporation, that has made remarkable progress in environmental sustainability throughout the past year. The Japan-based company is the first silicon wafer supplier to make a public commitment to setting a science-based target. Following discussions at the top leadership level, Sumco acted at an impressive speed, accelerating existing carbon reduction targets and expanding renewable electricity sourcing.
In the category of companies with less than one billion euros revenue, the “Best Improvement Award” went to iwis SE & Co. KG. The Munich-based, family-owned company serves as a great example to many with its ambitious “Zero Carbon 2040 program” and science-based target commitment. Infineon recognizes the proactive approach towards improving the environmental impact of operations and supply chain and the integration of climate targets in the environmental management system at the sites.
“We would like to applaud the winners of our Green Awards: Applied Materials, Sumco and iwis for stepping up and taking responsibility for environmental sustainability and performance,” said Angelique van der Burg, Chief Procurement Officer at Infineon and host of the day. “We believe that this performance will motivate our whole supplier base to raise the bar higher and follow their example. Now let’s make the best practice a standard practice.”
Original – Infineon Technologies
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MCC Semi unveiled the latest selection of 5000W TVS diodes designed to provide superior protection against transient voltage spikes. Whether caused by lightning or other electrical disturbances, voltage surges can add up to costly damage and system failures without proper safeguards in place. That’s where our 5000W TVS solutions come in.
With a broad range of voltages — from 11V to 400V — and a compact yet powerful SMC package, these transient voltage suppressors (TVS) optimize space on the board without sacrificing performance.
Leveraging glass-passivated junction technology, these TVS diodes ensure the highest durability and reliability in demanding environments at operating junction temperatures of up to 175°C. They also boast IEC 61000-4-2 ESD ratings of 30kV for air and contact discharge for enhanced protection during electrostatic discharge events.
Rapid response times with capacitance typically less than 3,000 pF and impressive clamping capabilities assure sensitive electronic components are adequately protected, and a leakage current less than 2µA above 11V reduces power losses.
Available in unidirectional and bidirectional configurations, MCC’s 5000W TVS diodes meet diverse application needs while reducing maintenance costs and boosting overall reliability.
Features & Benefits:
- IEC 61000-4-2 ESD Protection: 30kV (Air) and 30kV (Contact) for solid electrostatic discharge protection.
- Maximum Operating Junction Temperature: Rated up to 175°C for reliable operation in high-temperature environments.
- Ultra-Fast Response Time: Capacitance typically less than 3000 pF from 0V to breakdown voltage minimum, ensuring immediate protection.
- Low Leakage Current: Typical ID less than 2µA from 11V to minimize power loss.
Original – Micro Commercial Components
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In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. To achieve this functionality, it is common to use high-side disconnect switches (e.g. MOSFETs) to prevent a load short circuit from affecting the battery.
Infineon Technologies AG introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault.
The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.
The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a V DS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.
Infineon will be showcasing a demo featuring the 1EDL8011 at its global technology forum OktoberTech™ 2024 in Silicon Valley on 17 October. The 1EDL8011 is available now. Further information can be found at www.infineon.com/1edl8011.
Original – Infineon Technologies
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Aehr Test Systems announced financial results for its first quarter of fiscal 2025 ended August 30, 2024.
Fiscal First Quarter Financial Results:
- Net revenue was $13.1 million, compared to $20.6 million in the first quarter of fiscal 2024.
- GAAP net income was $0.7 million, or $0.02 per diluted share, compared to GAAP net income of $4.7 million, or $0.16 per diluted share, in the first quarter of fiscal 2024.
- Non-GAAP net income, which excludes the impact of stock-based compensation, acquisition-related costs, and amortization of intangible assets, was $2.2 million, or $0.07 per diluted share, compared to non-GAAP net income of $5.2 million, or $0.18 per diluted share, in the first quarter of fiscal 2024.
- Bookings were $16.8 million for the quarter.
- Backlog as of August 30, 2024 was $16.6 million.
- Total cash, cash equivalents and restricted cash as of August 30, 2024 were $40.8 million, compared to $49.3 million at May 31, 2024, reflecting $10.6 million in net cash paid during the quarter for the acquisition of Incal Technology, Inc.
Gayn Erickson, President and CEO of Aehr Test Systems, commented:
“We finished the first quarter with revenue and non-GAAP net income ahead of consensus estimates and are off to a good start to our fiscal year. Silicon carbide wafer level burn-in test systems and full wafer contactors are poised to be key contributors to revenue again this year. We are also forecasting material bookings and revenue contributions from several other markets this fiscal year, as we are successfully executing on our strategy to expand our test and burn-in products into other large and fast-growing markets such as artificial intelligence processors, gallium nitride power semiconductors, hard disk drive components and flash memory devices.
“We have been seeing a stabilization and increasingly positive discussions within the silicon carbide power semiconductor market over the past quarter. Electric vehicle (EV) suppliers are clearly moving towards silicon carbide in integrated modules, combining silicon carbide MOSFETs into single packages to meet the industry’s power, efficiency, and cost-effectiveness demands. Due to the need for extensive test and burn-in of these devices to ensure reliability for mission-critical applications like EVs, the benefits of conducting this screening at the wafer level before integrating them into modules, which may sometimes contain 32 or more other devices, are becoming clear. The process improves yields and reduces costs, driving demand for wafer level burn-in, an area where Aehr Test stands as the low-cost leader and proven solution for this critical testing. We are highly optimistic about our silicon carbide business and expect it to gain momentum over the next few quarters. Our silicon carbide customers are forecasting capacity expansion needs in calendar 2025, with several anticipating purchases of one or two systems in early 2025, followed by production volumes in the second half of the year, and ramping further into 2026.
“Meanwhile, we continue to see strong demand for our FOX WaferPakTM full wafer Contactors for silicon carbide, driven by a record number of new device designs started this past quarter. These designs are expected to lead to additional WaferPak purchases for engineering qualification as well to volume production orders as they advance to production. We had another solid quarter for WaferPak sales, generating over $12 million in revenue from WaferPaks in the first quarter.
“We are also making steady progress on our previously announced benchmarks and engagements with new silicon carbide device and module suppliers. We are confident that we will add several new silicon carbide customers this year, establishing our solution as their tool of record for volume production. Additionally, silicon carbide is gaining traction in applications beyond electric vehicles, such as solar, industrial, and data centers, which will expand our addressable markets.
“We are now in negotiations with our first gallium nitride (GaN) semiconductor customer for volume production wafer level test and burn-in of their devices. This past year, this customer purchased a significant number of WaferPaks to successfully qualify a wide range of GaN device types aimed at multiple markets, including consumer, industrial, and automotive. In addition, we have had increased discussions and engagements with multiple potential new GaN suppliers. We believe GaN is a significant up and coming technology for power semiconductors. With a forecasted CAGR of more than 40% to over $2 billion in GaN devices sold annually by 2029, it has the potential to be a significant market opportunity for Aehr’s wafer level solutions.
“Last quarter, we announced that an Artificial Intelligence (AI) accelerator company committed to evaluating our FOXTM solution for wafer level burn-in of their high-power processors. This evaluation is underway at our Fremont facility, where multiple wafers are being tested using our proprietary WaferPaks and new high-power FOX-XP and NP systems, which provide up to 3500 watts of power delivery and thermal control per wafer. We are delivering over 2000 amperes of current to a single 300 mm wafer, allowing us to burn-in numerous processors with our proprietary test modes. The evaluation is progressing very well, and once we demonstrate successful wafer level test results and throughput, we anticipate they will adopt our high-power FOX-XP systems for production of their next-generation AI processors, beginning this fiscal year.
“During the quarter we announced and completed our acquisition of Incal Technology, Inc. We are excited to bring the combined strengths of both companies to market as we begin engaging with Incal’s customers, including many AI industry leaders. Customer feedback to this acquisition has been overwhelmingly positive, with several meetings held over the past few weeks where some customers indicated increased forecasts for engineering qualification as well as for volume production.
“Last month, we were pleased to announce the first volume production orders for Incal’s new Sonoma ultra-high-power semiconductor packaged part test and burn-in solution designed for AI accelerators, graphics processors, network processors, and high-performance computing processors. These orders were placed by a large-scale data center hyperscaler that provides computing power and storage capacity to millions of users worldwide. The integration with Incal is progressing well. We have already shipped several systems since the acquisition, and we plan to consolidate personnel and manufacturing into Aehr’s Fremont facility by the end of the fiscal year.
“Last quarter, we announced a key customer in the hard disk drive space that is now forecasting a production ramp-up starting this fiscal year for a new high-volume data storage device application. This customer is finalizing their capacity requirements, and we expect this ramp-up to drive orders for multiple FOX-CP production systems and WaferPak Contactors, with shipments likely occurring in the second half of this fiscal year. We see the data storage market, along with various devices supporting the global 5G expansion, as new growth opportunities for our systems, as these markets require devices with exceptionally high levels of quality and long-term reliability.
“With all of these customer engagements, market opportunities, and the products to address them, we are very optimistic about the year ahead, and we are reaffirming our financial guidance for revenue growth and profitability for the year.”
For the fiscal year ending May 30, 2025, Aehr is reiterating its previously provided guidance for total revenue of at least $70 million and net profit before taxes of at least 10% of revenue.
Original – Aehr Test Systems
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Infineon Technologies AG announced a partnership with Canada-based AWL-Electricity Inc., a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN™ GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries.
The partnership combines Infineon’s cutting-edge gallium nitride (GaN) technology with AWL-E’s innovative MHz resonant capacitive coupling power transfer system, achieving industry-benchmark wireless power efficiencies. Infineon’s GaN transistor technology offers highest efficiency and highest power density while operating at highest switching frequencies.
This enables AWL-E to increase its system lifetime, reduces downtime and operating costs, and improves ease-of-use for consumers. In the automotive sector, the technology enables a new level of interior experiences and seat dynamics. In industrial systems, it provides near-unconstrained levels of design freedom, such as for automated guided vehicles or robotic applications. Additionally, the technology allows for a fully sealed system design, eliminating the need for charging ports which contributes to reducing global consumption of batteries.
“With our partner approach we prove once more the ability to unlocking the full system-level benefits of Infineon’s CoolGaN technology, enabling compactness and efficiency,” said Falk Herm, Global Partnership & Ecosystem Management at Infineon’s Power & Sensor Systems (PSS) Division at Infineon. “The combination of AWL-E and Infineon’s complementary capabilities demonstrates how the features of GaN, namely operating at MHz frequencies, change the paradigm of what can be done with power transistors, driving greener and better performing products.”
“Infineon uniquely brings you into their family with a recognition that a strong ecosystem ultimately solves today’s power needs,” said Francis Beauchamp-Verdon, Co-founder, VP and Business Development Director at AWL-E. “Infineon’s GaN transistors, eval boards, and partner opportunities have boosted acceptance of our GaN-based MHz power coupling systems.”
Infineon is a leader in the power semiconductor market and currently the only manufacturer mastering all power technologies while offering the broadest product and technology portfolio of silicon (such as SJ MOSFETs, IGBTs), silicon carbide (such as Schottky diodes and MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare die, discretes, and modules.
Original – Infineon Technologies
