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For next-generation power electronics, BASF has developed a polyphthalamide (PPA) that is especially suited for manufacturing housings of IGBT (insulated-gate bipolar transistor) semiconductors. Ultramid® Advanced N3U41 G6 addresses the growing demand for high-performance, reliable electronic components for e.g., electric vehicles, high-speed trains, smart manufacturing and the generation of renewable energy.
Semikron Danfoss, a global technology leader in power electronics, now uses the BASF PPA as housing in its Semitrans 10 IGBT which can be installed in inverters of photovoltaic and wind energy systems. Due to its outstanding chemical resistance and dimensional stability, the Ultramid® Advanced N grade enhances the robustness, long-term performance and reliability of these IGBTs, thus meeting growing needs for energy saving, higher power density and increased efficiency. IGBTs enable efficient switching and control of electrical circuits in power electronics.
“IGBTs are a key element of modern electronics, particularly in the renewable energy sector,” explains Jörn Grossmann from research and predevelopment at Semikron Danfoss. “IGBTs must operate at higher temperatures while maintaining long-term stability and performance. The Semitrans 10 has set a new benchmark for performance and efficiency benefiting from the unique properties of BASF’s PPA. We chose this material because of its extraordinary electrical isolation even in harsh environments and because of its excellent robustness against short-term temperature peaks in the assembly process.” The combination of high-performance material and smart design allows for faster switching speeds, lower conduction losses, and improved thermal management, thus addressing key needs in power electronics.
In today’s IGBTs, BASF’s proven Ultradur® (PBT: polybutylene terephthalate) is widely used. The new PPA is designed to meet the stringent requirements of next-generation IGBTs for rapidly evolving power electronics. They demand materials that can withstand higher temperatures, provide sustained electrical insulation, and maintain dimensional stability under challenging environmental conditions like humidity, dust and dirt.
The laser-sensitive Ultramid® Advanced N3U41G6 with non-halogenated flame retardant combines high thermal stability with low water uptake and excellent electrical properties. It is characterized by a high CTI (Comparative Tracking Index) of 600 (acc. to IEC 60112): This supports miniaturization of IGBTs by lower creepage and better insulation than materials so far used for power switches. The UL-certified grade shows an excellent electrical RTI (Relative Temperature Index) value of 150°C.
“BASF’s PPA compound is globally available and ready for sampling”, says Jochen Seubert, senior application expert for power electronics at BASF. “Backed by our customer-focused technical support in part development, we expect this innovative material to significantly contribute to the advancement of power electronics, supporting the global transition to renewable energies.” For manufacturing of IGBTs, the BASF PPA is compatible with potting materials used to assemble the semi-conductors with metal pins and clamps after injection molding.
BASF’s polyphthalamide portfolio is based on the six polymers Ultramid® Advanced N (PA9T), Ultramid® Advanced T1000 (PA6T/6I), Ultramid® Advanced T2000 (PA6T/66), Ultramid® T KR (PA6T/6), Ultramid® T6000 (PA66/6T) and Ultramid® T7000 (PA/PPA). They open the door to the next generation of lightweight, high-performance plastic components in many different sectors including the automotive industry, electronics and electric devices, mechanical engineering and consumer goods.
The PPA portfolio is available globally and complemented by BASF’s Ultrasim® simulation tool and extensive experience in application development. It includes more than 50 compounded grades for injection molding and extrusion, products with or without flame retardants. The compounds are available in different colors, from colorless to laser-markable black, with short-glass, long-glass or mineral fiber reinforcement, and with various heat stabilizers.
Original – BASF
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Navitas Semiconductor announced GaNSlim™, a new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance.
GaNSlim enables the simplest, fastest, and smallest system design by integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with an ultra-low startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup.
Integrated features such as loss-less current sensing eliminate external current sensing resistors and optimize system efficiency and reliability. Over-temperature protection ensures system robustness and auto sleep-mode increases light and no-load efficiency. Autonomous turn-on/off slew rate control maximizes efficiency and power density while reducing external component count, system cost and EMI.
GaNSlim features a patented, 4-pin, high-thermal-performance, low-profile, low-inductance, DPAK package. This package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc.
“Our GaN focus is on integrated devices that enable high-efficiency, high-performance power conversion with the simplest designs and the shortest possible time-to-market,” says Reyn Zhan, Sr. Manager of Technical Marketing. “Our new GaNSlim portfolio – built on integration, ease-of-use, and low-cost manufacturing methods, – continues to grow the customer pipeline with over 50 new projects already identified. GaNSlim increases our GaN addressable market by enabling lower system costs compared to silicon designs for many applications, targeting applications under 500 W across mobile, consumer and home appliance.”
Devices in the NV614x GaNSlim family are rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.
As with other Navitas GaN ICs, GaNSlim devices are supplied with an industry-leading twenty-year warranty, while demo boards for QR flyback, single-stage PFC, boost PFC plus QR flyback and TV power supply designs allow for rapid evaluation and selection of the optimum device for a given application.
Original – Navitas Semiconductor
