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Nexperia announced that it has entered into a strategic partnership with KOSTAL, a leading automotive supplier, which will enable it to produce wide bandgap (WBG) devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled (TSC) QDPAK packaging for onboard chargers (OBC) in electric vehicles (EV).
KOSTAL Automobil Elektrik, with over a century of experience, is a key player in the global automotive industry. Nearly one in every two cars worldwide is equipped with KOSTAL’s products, including more than 4.5 million onboard chargers, contributing to advancements in electromobility. Ranked among the top 100 automotive suppliers globally, KOSTAL is recognized for its innovative, reliable, and cost-optimized solutions. Its long-standing partnerships with customers and employees reflect the company’s commitment to quality and collaboration.
“Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices”, according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. “KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable ‘real-world’ data that will allow us to further enhance their performance”.
“KOSTAL is extending its’ strategic SiC supply portfolio to support our growth path towards 2030 with a special dedication on E-Mobility applications for onroad and offroad applications” states Dr. Georg Mohr, Executive VP Purchasing & Supply Chain of the KOSTAL Group. “Under this strategic partnership, which reinforces our long- standing customer-supplier relationship, KOSTAL will leverage Nexperia’s expertise in wide bandgap technology, particularly their SiC MOSFETs, which we believe are among the best in the market. By sharing our insights from real-world EV charging applications, we aim to contribute to the development of even more optimized and tailored SiC devices that meet the specific demands of our next-generation solutions.”
Nexperia is among the few companies that is offering a comprehensive range of WBG semiconductor technologies, including SiC diodes and MOSFETs, as well as GaN e-mode and d-mode devices, alongside its established silicon portfolio. With a strong commitment to expanding its commercial WBG offerings, Nexperia is focused on delivering the most suitable products to meet the needs of an increasing range of applications. The company’s focus is to support the responsible use of electrical energy through innovative solutions. Nexperia continues to develop technologies that address the growing demand for efficiency and sustainability in power management.
Original – Nexperia
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Infineon Technologies AG announced the launch of a new family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5, further strengthening its Gallium Nitride (GaN) portfolio. Target applications for this new product family range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances.
The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, enabling rapid redesign of existing platforms. The new devices provide improved figures of merit to ensure competitive switching performance in focus applications.
Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in excellent efficiencies in both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case.
These benefits allow the devices to operate at high frequencies with minimal power loss, resulting in superior power density. The CoolGaN Transitors 650 V G5 enable SMPS applications to be smaller and lighter or to increase the output power range in a given form factor.
The new high-voltage transistor product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8 , TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). In the future, CoolGaN will transition to 12-inch production. This will enable Infineon to further expand its CoolGaN capacity and ensure a robust supply chain in the GaN power market, which is expected to reach $2 billion by 2029, according to Yole Group.
A demo featuring the CoolGaN Transistors 650 V G5 will be showcased at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).
Original – Infineon Technologies
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Power Integrations introduced a new member of its InnoMux™-2 family of single-stage, independently regulated multi-output offline power supply ICs. The new device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary PowiGaN™ technology.
The 1700 V rating further advances the state-of-the-art for GaN power devices, previously set by Power Integrations’ own 900 V and 1250 V devices, both launched in 2023. The 1700 V InnoMux-2 IC easily supports 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 percent efficiency in applications requiring one, two or three supply voltages.
Each output is regulated within one percent accuracy, eliminating post regulators and further improving system efficiency by approximately ten percent. The new device replaces expensive silicon carbide (SiC) transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems.
Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V and now 1700 V. Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses.”
Original – Power Integrations
