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Nexperia announced that it has entered into a strategic partnership with KOSTAL, a leading automotive supplier, which will enable it to produce wide bandgap (WBG) devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled (TSC) QDPAK packaging for onboard chargers (OBC) in electric vehicles (EV).
KOSTAL Automobil Elektrik, with over a century of experience, is a key player in the global automotive industry. Nearly one in every two cars worldwide is equipped with KOSTAL’s products, including more than 4.5 million onboard chargers, contributing to advancements in electromobility. Ranked among the top 100 automotive suppliers globally, KOSTAL is recognized for its innovative, reliable, and cost-optimized solutions. Its long-standing partnerships with customers and employees reflect the company’s commitment to quality and collaboration.
“Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices”, according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. “KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable ‘real-world’ data that will allow us to further enhance their performance”.
“KOSTAL is extending its’ strategic SiC supply portfolio to support our growth path towards 2030 with a special dedication on E-Mobility applications for onroad and offroad applications” states Dr. Georg Mohr, Executive VP Purchasing & Supply Chain of the KOSTAL Group. “Under this strategic partnership, which reinforces our long- standing customer-supplier relationship, KOSTAL will leverage Nexperia’s expertise in wide bandgap technology, particularly their SiC MOSFETs, which we believe are among the best in the market. By sharing our insights from real-world EV charging applications, we aim to contribute to the development of even more optimized and tailored SiC devices that meet the specific demands of our next-generation solutions.”
Nexperia is among the few companies that is offering a comprehensive range of WBG semiconductor technologies, including SiC diodes and MOSFETs, as well as GaN e-mode and d-mode devices, alongside its established silicon portfolio. With a strong commitment to expanding its commercial WBG offerings, Nexperia is focused on delivering the most suitable products to meet the needs of an increasing range of applications. The company’s focus is to support the responsible use of electrical energy through innovative solutions. Nexperia continues to develop technologies that address the growing demand for efficiency and sustainability in power management.
Original – Nexperia
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Navitas Semiconductor announced unaudited financial results for the third quarter ended September 30, 2024.
“I’m pleased to announce record sales in the mobile fast-charger market plus a completely new GaN platform for 48V AI data centers, EV and AI robotics applications in conjunction with a new, strategic, dual-sourcing partnership with Infineon,” said Gene Sheridan, CEO and co-founder.
`“Despite macro-economic challenges, we continue to grow faster than the market, and the new, low-voltage GaN platform not only opens up new strategic markets, but also brings customers dual-sourcing options from Navitas and Infineon for added confidence to accelerate adoption of GaN into new mainstream, high-volume applications.”
The company also announced a cost-reduction plan that is expected to save $2 million per quarter and streamline the organization with increased focus on AI data center, EV and mobile applications, accelerating the company’s path to profitability. The plan includes a 14% reduction in headcount (approximately 45 employees).
3Q24 Financial Highlights
- Revenue: Total revenue was $21.7 million in the third quarter of 2024, compared to $22.0 million in the third quarter of 2023, and $20.5 million in the second quarter of 2024.
- Loss from Operations: GAAP loss from operations for the quarter was $29.0 million, compared to a loss of $28.6 million for the third quarter of 2023 and a loss of $31.1 million for the second quarter of 2024. On a non-GAAP basis, loss from operations for the quarter was $12.7 million compared to a loss of $8.7 million for the third quarter of 2023, and a loss of $13.3 million in the second quarter of 2024.
- Cash: Cash and cash equivalents were $98.6 million as of September 30, 2024.
Market, Customer and Technology Highlights
- New, Low-voltage (LV) GaN Platform (80-200V): Optimized for 48V systems in AI data center, EV, and motor drive, sampling in Q4 2024, with strategic dual-sourcing partnership with Infineon Technologies. Common specifications (packaging, pin-out, footprint and IP) to accelerate customer adoption of GaN into high-volume, mainstream applications.
- AI Data Center: New 98%-efficient, 8.5 kW AI power supply reference design with high-voltage (HV) GaN+SiC architecture launched as well as proprietary IntelliWeave™ PFC control technique to deliver extreme power density demanded by NVIDIA’s Hopper-Blackwell-Rubin AI GPU roadmap. High-voltage GaNSafe power ICs and Gen-3 ‘Fast’ SiC devices are featured in over 60 active customer projects with direct customers such as Delta, GreatWall, Compuware and LiteON, supplying end-users like AWS, Azure and Google. Our data center production revenues started in Q3 as expected and will continue ramping throughout 2025.
- EV: Leading-edge, trench-assisted, planar-gate Gen-3 ‘Fast’ SiC devices now fully AEC Q101 (automotive) qualified and pushing beyond. Six new on-board and road-side charger design wins in Q3, expected to ramp in 2025 and 2026. Largest pipeline segment, with 200+ projects. New, LV GaN platform optimized for 48V battery EV applications.
- Mobile & Consumer: GaNSlim ICs achieved another 26 design wins in Q3. Three new tier-1 OEM wins expected to deliver revenue ramping Q2’25, adding to the Samsung wins announced in August.
- Appliance & Industrial: Thirty new design wins in Q3, ranging from vacuum cleaners and LED lighting, to solid-state, grid-connected circuit-breakers, multi-kW power supplies and heat pumps. New, LV GaN platform addresses 48V industrial motor drives including AI robotics.
- Solar & Energy Storage: Ten design wins, including at Generac, expected to ramp mid-2025. Next-gen GaN ICs – including Navitas-proprietary, industry-leading bi-directional GaN ICs – continue on track for significant mid-2025 ramp in solar micro-inverters. New, LV GaN doubles TAM in inverters, as complement to HV GaN and SiC.
Fourth quarter 2024 net revenues are expected to be between $18.0 and $20.0 million. Non-GAAP gross margin for the fourth quarter is expected to be 40% plus or minus 50 basis points and non-GAAP operating expenses are expected to be approximately $20.5 million in the fourth quarter of 2024.
Original – Navitas Semiconductor
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NXP Semiconductors N.V. reported financial results for the third quarter, which ended September 29, 2024.
“NXP delivered quarterly revenue of $3.25 billion, in-line with our overall guidance. While we experienced some strength against our expectations in the Communication Infrastructure, Mobile and Automotive end markets, we were confronted with increasing macro related weakness in the Industrial & IoT market. Our guidance for the fourth quarter reflects broader macro weakness especially in Europe and the Americas. We focus on managing what is in our control enabling NXP to drive resilient profitability and earnings in an uncertain demand environment,” said Kurt Sievers, NXP President and Chief Executive Officer.
Key Highlights for the Third Quarter 2024:
- Revenue was $3.25 billion, down 5 percent year-on-year;
- GAAP gross margin was 57.4 percent, GAAP operating margin was 30.5 percent and GAAP diluted Net Income per Share was $2.79;
- Non-GAAP gross margin was 58.2 percent, non-GAAP operating margin was 35.5 percent, and non-GAAP diluted Net Income per Share was $3.45;
- Cash flow from operations was $779 million, with net capex investments of $186 million, resulting in non-GAAP free cash flow of $593 million;
- During the third quarter of 2024, NXP continued to execute its capital return policy with the payment of $259 million in cash dividends, and the repurchase of $305 million of its common shares. The total capital return of $564 million in the quarter represented 95 percent of third quarter non-GAAP free cash flow. On a trailing twelve month basis, capital return to shareholders represented $2.4 billion or 87 percent of non-GAAP free cash flow. The interim dividend for the third quarter 2024 was paid in cash on October 9, 2024 to shareholders of record as of September 12, 2024. On August 29th, the NXP board of directors authorized an additional $2.0 billion for share repurchases, resulting in a $2.64 billion share repurchase balance at the end of the third quarter. Subsequent to the end of the third quarter, between September 30, 2024 and November 1, 2024, NXP executed via a 10b5-1 program additional share repurchases totaling $117 million;
- On August 20, 2024, ESMC, the previously announced manufacturing joint venture between TSMC, Robert Bosch GmbH, Infineon Technologies AG and NXP Semiconductors N.V. held a groundbreaking ceremony to mark the initial phase of construction of its first semiconductor fab in Dresden, Germany;
- On September 4, 2024, Vanguard International Semiconductor Corporation and NXP Semiconductors N.V. announced the receipt of all necessary governmental approvals from relevant authorities and injected capital to officially establish the previously announced VisionPower Semiconductor Manufacturing Company Pte Ltd (VSMC) manufacturing joint venture. The company will now proceed with the planned construction of VSMC’s first 300mm wafer manufacturing facility;
- On September 10, 2024, NXP announced the Trimension® SR250, the industry’s first single-chip, UWB solution to enable Industrial and IoT applications that integrates on-chip processing capabilities with both short-range UWB-based radar and secure ranging;
- On September 17, 2024, NXP announced the MC33777, the world’s first electric vehicle battery junction box IC that consolidates essential BMS functions into a single device; and
- On September 24, 2024, NXP announced the new i.MX RT700 crossover MCU family, designed to power smart AI-enabled edge devices, such as wearables, consumer medical devices, smart home devices and HMI platforms.
Original – NXP Semiconductors
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Cambridge GaN Devices (CGD) will exhibit at Electronica which runs from November 12-15, 2024 at the Messe München, Munich, Germany. This will be the second time that the company has exhibited at the world’s leading trade fair and conference for electronics, marking the company’s position as a leader in delivering gallium-nitride power ICs which are easy to use and very reliable.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“Since our first appearance at Electronica, CGD has made remarkable steps. We have introduced our P2 series ICeGaN® ICs that feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency. We have announced a deal with TSMC, the leading IC fabrication house in the world which ensures quality and supply of our innovative power devices. Also, studies by leading academic research establishment, Virginia Tech University, have demonstrated that our ICeGaN GaN technology is more reliable and robust than other GaN platforms. GaN is now available for use at higher power levels, and at Electronica we are expecting to meet with designers who are eager to take advantage of the efficiency and power density benefits that GaN can bring to their latest designs.”During the show, CGD will make two presentations:
- November 12, 13:20 – 14:10, Booth A5.351: SiC & GaN Technologies – Exploring Advancements, Addressing Challenges CGD’s CTO and co-founder, Professor Florin Udrea will join a panel of GaN experts for a Panel Discussion moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News.
- November 12, 16:10-16:35, Power Electronics Forum: ICeGaN as a smart high voltage platform for high power industrial and automotive applications presented by Professor Florin Udrea.
The power devices field has undergone significant change due to the emergence of Wide Band Gap semiconductors, particularly Gallium Nitride (GaN) and Silicon Carbide (SiC). Traditionally, GaN has been used for lower power consumer applications (e.g., power supplies), while SiC dominated the medium to high power markets, such as industrial (e.g., motor drives) and automotive applications (e.g., traction inverters).
SiC’s superior scaling of on-state resistance at high voltages gives it an edge above 1.2 kV, but GaN is now competing with SiC at 650V for all power levels. ICeGaN®, featuring sensing and protection functions, surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC’s 1.2 kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10-500 kW) applications.
At Electronica, CGD will show a number of demos that employ ICeGaN, including:
- 3 kW totem-pole PFC evaluation board;
- High and low power QORVO motor drive evaluation kits developed in collaboration with CGD and utilising ICeGaN
- Half-bridge and full-bridge evaluation boards, plus an ICeGaN in parallel evaluation board;
- Single leg of a 3-phase 800 V automotive inverter demo board, developed in partnership with French public R&I institute, IFP Energies nouvelles (IFPEN);
- ICeGaN vs discrete GaN circuits comparison in half bridge (daughter cards) demo board.
- High-density USB-PD adaptor developed with Industrial Technology Research Institute (ITRI) of Taiwan
Original – Cambridge GaN Devices
