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Navitas Semiconductor announced that the company’s revenue growth has been acknowledged for the third consecutive year, by Deloitte’s Technology Fast 500™. Navitas growth was driven by strong demand for its advanced, high-efficiency, wide-bandgap gallium nitride (GaN) and silicon carbide (SiC) power components, across a growing number of global markets and customers.
Now in its 30th year, the Deloitte Technology Fast 500 provides a ranking of the fastest-growing technology, media, telecommunications, life sciences, fintech, and energy tech companies — both public and private — in North America. Based on percentage fiscal year revenue growth from 2020 to 2023, Navitas achieved 571% growth as GaN and SiC technology enabled efficient, sustainable applications and displaced legacy silicon chips.
“As a ‘pure-play’, next-gen, semiconductor company, Navitas continues to outperform the overall power semiconductor market, with record sales into mobile fast chargers, now ramping AI data center revenues and a strong customer pipeline for EV opportunities,” said Gene Sheridan, CEO and co-founder. “Recent introductions like GaNSafe™, Gen-3 ‘Fast’ SiC, and a newly-announced, 48V-focused range in partnership with Infineon, have built a strong foundation for further revenue growth in applications from 20W to 20MW, and with a market opportunity of over $22B per year.”
Original – Navitas Semiconductor
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Infineon Technologies AG introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, Infineon extends its portfolio of power devices to provide designers with a solution for isolated gate driver supply.
By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications.
The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support a wide input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults.
The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements.
The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.
Original – Infineon Technologies
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To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6×5) package.
Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — by 15.4% while providing 62.5% lower RthJC and 179 % higher continuous drain current.
With the industry’s lowest on-resistance of 5.6 mΩ at 10 V and on-resistance times gate charge FOM of 336 mΩ*nC, the device released today minimizes power losses from conduction. This allows designers to boost efficiency to meet next-generation power supply requirements, such as 6 kW AI server power systems. In addition, the extremely low 0.45 °C/W RthJC of the PowerPAK SO-8S package enables continuous drain current up to 144 A to increase power density while providing robust SOA capability.
The SiRS5700DP is ideal for synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. Typical applications will include servers, edge computing, super computers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device’s standard 6 mm by 5 mm footprint is fully compatible with the PowerPAK SO-8 package.
Original – Vishay Intertechnology
