Infineon Technologies AG introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, Infineon extends its portfolio of power devices to provide designers with a solution for isolated gate driver supply.
By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications.
The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support a wide input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults.
The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements.
The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.
Original – Infineon Technologies
