-
VisIC Technologies announced a new partnership aimed at advancing high-efficiency GaN inverter technology for the EV market. This collaboration will provide automotive OEMs with power semiconductors that exceed silicon carbide (SiC) performance, while offering lower costs at device and system level.
In a recent test conducted at AVL’s state-of-the-art facilities in Germany, an inverter based on VisIC’s GaN-on-Silicon D³GaN components proved an outstanding performance. Mounted on AVL’s e-motor test bench and controlled by AVLs SOP eDrive controls algorithm, the system achieved a benchmark efficiency level of 99.67% at 10kHz, stunningly climbing to over 99.8% efficiency at 5kHz — which outperforms comparable SiC inverters by up to 0.5% and is cutting energy losses by more than 60%.
This breakthrough positions the AVL and VisIC partnership as a compelling option for automakers striving to balance high efficiency with affordability in EV design. It is worth noting that VisIC’s GaN-on-Silicon power devices require significantly less energy and therefore CO2 during the chip production process compared to SiC. They can be produced in widespread 200mm and 300mm silicon foundries, which makes scaling production a straightforward process.
“With AVL, we’re making cutting-edge GaN inverter technology accessible for even more electric vehicles, establishing a new benchmark for efficiency and cost-effectiveness in the industry,” said Gregory Bunin, CTO of VisIC Technologies. “Our partnership reflects a shared commitment to driving EV innovation that’s both impactful and accessible, bringing GaN’s unparalleled performance to a broader market.”
“Working with VisICs new GaN power module for high-power systems enables us to offer our customers cutting-edge solutions that are optimally aligned with the requirements of next-generation drive systems. These include, among other things, high power density combined with reduced overall system costs,” added Dr. Thomas Frey, Head of Segment E-Mobility & E-Drive System at AVL Software and Functions GmbH. “Together, we can significantly advance e-mobility and help reduce the carbon footprint.”
Looking ahead, AVL and VisIC plan to expand their GaN-on-Si platform to include 800V GaN power modules, ensuring that their technology remains scalable and adaptable to the needs of the growing BEV market. This collaboration places AVL and VisIC Technologies at the forefront of GaN inverter technology, establishing new standards for energy efficiency and performance across the EV industry.
Original – VisIC Technologies
-
DISCO Corporation has announced a comprehensive series of initiatives aimed at advancing both its environmental goals and technological innovations. As a leader in precision cutting and grinding technologies, the company continues to shape the future of semiconductor manufacturing with a dual focus on sustainability and cutting-edge product development.
The company has intensified its focus on environmental, social, and governance (ESG) strategies, introducing initiatives designed to enhance operational sustainability. By optimizing energy usage and reducing emissions, DISCO aims to minimize its environmental footprint while supporting global efforts toward decarbonization. These measures also include resource-efficient manufacturing processes that align with DISCO’s long-term vision for sustainable growth.
As part of its product lineup expansion, DISCO introduced the ZHSC25 and Z25 dicing blades. Specifically engineered for advanced applications, these tools represent significant advancements in semiconductor processing. The ZHSC25 blade is tailored for high-performance dicing of SiC wafers, a critical material in power electronics due to its superior heat resistance and efficiency. Meanwhile, the Z25 blade is optimized for a broad range of electronic components, offering manufacturers unprecedented processing speed and accuracy. These innovations demonstrate DISCO’s dedication to addressing evolving industry demands.
DISCO’s recent initiatives reflect a holistic approach to industry leadership, combining a commitment to ESG principles with groundbreaking innovation. By aligning technological advancements with sustainability objectives, the company aims to contribute to both the semiconductor industry’s growth and global sustainability efforts.
With these strategic updates, DISCO Corporation continues to exemplify its vision of harmonizing technology and sustainability to address the challenges and opportunities of a rapidly evolving global market.
The company plans to present its new offerings at SEMICON Japan 2024, one of the largest events in the semiconductor industry. This platform will enable DISCO to highlight the impact of its latest technologies and sustainability measures, reinforcing its role as an industry pioneer. Visitors to the exhibit will gain insights into how these developments are poised to enhance efficiency and quality in semiconductor manufacturing.
Original – DISCO
-
Navitas Semiconductor will showcase several breakthroughs for AI data centers, EVs, and mobile technology at CES 2025 (Tech West, Venetian suite 29-335, January 7th – 10th).
The “Planet Navitas” suite will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors. These technologies are designed for high growth markets that demand the highest efficiency and power density, such as AI data centers, electric vehicles (EVs), and mobile. Additionally, Navitas will demonstrate how GaN and SiC technologies contribute to reducing carbon-footprint, with the potential to save over 6,000 megatons of CO2 per year by 2050.
Major technology and system breakthroughs include:
- World’s only 650V bi-directional GaNFast™ power ICs: Game-changing, disruptive GaN technology for next-generation solutions that require the highest efficiency and power density, with the lowest complexity, and significant component reduction.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly-integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
- GeneSiC MOSFET die specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- Sustainable Solutions: Discover Navitas’ vision to reduce up to 6 Gtons/year of CO₂ by 2050 with technologies that offer higher efficiency, density, and grid independence.
CES 2025 takes place in Las Vegas, NV from January 7th – 10th. The “Planet Navitas” suite is located in Tech West at the Venetian, suite 29-335.
Original – Navitas Semiconductor
