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Navitas Semiconductor marks 10 years of innovation and growth in a broad range of fast-growing markets from ultra-fast mobile charging to AI data centers, renewable energy and EVs.
The name ‘Navitas’ is from the Latin, meaning ‘energy’, ‘zeal’, or ‘get-up-and-go!’, and signifies the company’s passion and rate of innovation to replace legacy silicon power chips and accelerate the transition from fossil fuels to a carbon-neutral, renewable-energy world, enabling and exploiting a $1.3 trillion electrification opportunity.
Commenting on the ten-year milestone, CEO and co-founder Gene Sheridan stated: “From a trailer to a $1B+ IPO in record time and a worldwide presence with a 300-strong, highly-skilled team, we’ve so far delivered over 150 million devices and saved over 200,000 tons of CO2. Growth awards from Deloitte and Forbes highlight our revenue growth, and a long-term guidance to grow many times faster than the market.”
Dan Kinzer, co-founder and COO / CTO added: “From our founding in 2014 as a next-generation power semiconductor pioneer, Navitas has amassed over 250 patents across ‘wide band-gap’ technologies gallium nitride and silicon carbide, as well as patented, enabling high-speed controller and digital isolators. Leading-edge technology, key talent and a passion for innovation are critical factors in Navitas’ success to-date, and a strong foundation for further technology and continued market leadership.”
With each new generation of GaN IC in only 15-18 months, GaN technology milestones during Navitas’ first decade include the launch of the world’s first integrated GaNFast™ power IC; GaNSense™ – the world’s first integrated precision current-sensing GaN chip; GaNSafe™ – the world’s most protected GaN power device for high-reliability systems; and the unveiling of a revolutionary new bi-directional GaN power IC platform with up to 9x smaller chip size than legacy silicon MOSFETs or IGBTs.
For higher voltages and higher power applications, Navitas offers the industry’s broadest range (650-6,500V) of SiC bare die and packaged devices, with best-in-class efficiency, ruggedness and high-frequency operation, based on GeneSiC technology. This assures Navitas’ position as a leading supplier of both SiC and GaN power semiconductors to markets ranging from consumer electronics, AI data centers and electric vehicles to renewable energy and industrial automation.
In 2021 the company went public with a $1B+ IPO on the Nasdaq exchange, and 2023 marked the shipment of over one hundred million GaN shipments. In the same year the company was recognized by Forbes as one of America’s top 50 most successful small companies and was ranked 72nd in the Deloitte Technology Fast 500™ of fast-growing North American companies.
Along the way the business has also offered the industry’s first 20-year warranty for its technologies and become the world’s first semiconductor company to achieve CarbonNeutral®-company certification from the leading experts on carbon-neutrality and climate finance, Climate Impact Partners.
Last year Navitas officially opened its new headquarters in Torrance, Ca. Around 100 highly-skilled Navitas staff are employed in Torrance for all aspects of GaN and SiC design, applications, test, characterization and quality, alongside specialists in finance, marketing and HR.
Navitas will celebrate 10 years of innovation and growth in a series of events during 2024, beginning with the APEC 2024 conference and “GaNFast Blast!” celebration in Long Beach from February 26th.
Original – Navitas Semiconductor
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Infineon Technologies AG detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), 25–29 February. Infineon’s wide-bandgap solutions offer the highest efficiency and power density, providing a key element to addressing climate change and accelerating decarbonization efforts. The Infineon best-in-class portfolio includes power devices for leading applications on silicon, silicon carbide (SiC) and gallium nitride (GaN) materials.
Infineon’s exhibits will span two booths, #1013 and #1319 (Infineon + GaN Systems), and feature demonstrations of a broad range of applications. Booth #1013 will be organized in six application zones, including:
- USB-C/Charging. See Infineon’s latest AC/DC and DC/DC USB-C PD chargers, along with system power solutions for next-generation applications such as laptops and notebooks.
- Motor controls. The company’s latest BLDC motor drive solutions for tomorrow’s power tools and robotic applications will be on display. Rad hard reaction wheel motor drives for satellites and space applications will also be demonstrated.
- Data centers. Infineon demonstrations will include a complete artificial intelligence (AI) server solution, a digital power hot-swap solution, and a liquid-cooled high-density power supply optimized for next-generation applications. Also see Infineon’s latest high-density dual-phase power modules that reduce the total cost of ownership in generative AI data centers.
- Electric vehicles (EVs). See Infineon’s latest 50 kW and 22 kW EV chargers, along with SiC- and GaN-based on-board charging solutions, and the company’s latest Hybrid PAK-based inverter for next-generation EVs.
- Renewables & energy storage. Highlighting critical energy applications, this demonstration area will feature the company’s latest solar DC/DC maximizers, along with DC-to-AC inverters, a bi-directional PFC/inverter, and DC-to-DC converters.
- Industrial control. The company’s growing portfolio of solid-state relays and circuit breakers used to replace electromechanical switches will be highlighted.
Infineon’s second booth (#1319) will showcase the company’s expanded portfolio of GaN solutions, such as class D audio amplifiers, data center power supplies, and consumer reference designs. In addition to exhibits in booths #1013 and #1319, Infineon will play a significant role as a contributor to the conference program, participating in more than 30 industry and technical sessions.
Original – Infineon Technologies
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Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, will be present at the upcoming APEC 2024, IEEE Applied Power Electronics Conference and Exposition. In addition to having its largest ever booth at the show, the company will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by datacentres as the use of Artificial Intelligence (AI) proliferates.
GIORGIA LONGOBARDI | CHIEF EXECUTIVE OFFICER, CGD:
“With datacentres now demanding 100kW per rack and predicting even more in the very near future, power system designers are looking to employ GaN devices in new architectures. At CGD we are addressing this challenge with new devices and reference designs which we will be discussing at APEC, along with many other applications where GaN can play a huge role in enabling sustainable electronics solutions that are more efficient, have high performance and are more compact.”
CGD will present three papers at APEC:
- Tuesday 27th February, 15.00-15.30 – ‘How ICeGaN™ technology can address the datacentre challenges that digitalisation brings’, with Andrea Bricconi, Chief Commercial Officer, CGD and Peter Di Maso, VP of Business Development (Americas) CGD.
- Wednesday 28th February, 09.10-09.30 – ‘Evaluation of GaN HEMT dv/dt Immunity and dv/dt induced false turn-on energy loss’, with Nirmana Perera, Application Engineer, CGD.
- Thursday 29th February, 09:45 – 10:10: ‘Monolithic integration addresses the design challenges of GaN Power devices’, with Di Chen, Director of Business Development & Technical Marketing, CGD.
On booth 1553, CGD will present a range of demos designed to showcase industry’s first easy-to-use and scalable 650 V GaN HEMT family. ICeGaN™ H2 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.
Addressing the increase in power required by server and industrial applications, CGD will show a 350 W PFC/LLC reference design using ICeGaN (650 V, 55 mΩ, H2 series). With a board power density of 23 W/in3, the bridgeless CrM Totem Pole PFC plus half-bridge LLC design has a peak efficiency of 95%, (93% average) and a no-load power consumption of 150 mW.
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD:
“GaN is now accepted as a reliable and proven technology that is able to deliver high efficiency and power density simultaneously. Datacentres, with their insatiable need for power, are an obvious application for GaN, but there are many other consumer, industrial and automotive applications where GaN can also demonstrate the ability to be a disruptive technology. CGD has delivered industry’s most easy-to-use GaN technology – ICeGaN – and we are keen to share our ideas with the audience at APEC.”
Original – Cambridge GaN Devices
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Micro Commercial Components unveiled 1700V SiC MOSFET – SICW400N170A-BP. Designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400mΩ and high blocking voltage capability. SICW400N170A-BP SiC MOSFET enables high-speed switching while ensuring minimal conduction losses — essential requirements for optimizing frequency-dependent systems.
A standard, yet durable TO-247AB package delivers effective operation at a gate-source voltage of 20V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component’s appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
Features & Benefits:
- High blocking voltage capability (1700V)
- Ultra-low on-resistance (400mΩ) enhances efficiency
- Low capacitance enables faster switching
- Excellent thermal stability
- High operating junction temperature (to +175°C)
- Standard TO-247AB package
Original – Micro Commercial Components
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Micro Commercial Components introduced its latest high-performance component — 1200V SiC N-channel MOSFET. With an impressively low on-resistance of just 28mΩ at a gate-source voltage of 18V, SICW028N120A4-BP is engineered to deliver in demanding high-power applications.
Housed in a TO-247-4 package, this MOSFET works well with the popular D2PAK 4-pin footprint and includes a Kelvin source pin for significant reduction in switching losses and a boost in energy efficiency.
A high operating junction temperature of up to +175°C and excellent thermal stability ensure this new SiC MOSFET will revolutionize power management in a diverse range of industrial and commercial devices that must perform in harsh conditions.
Features & Benefits:
- 1200V blocking voltage capability
- 28mΩ low on-resistance
- Kelvin source pin for enhanced switching
- Avalanche ruggedness for durability
- Excellent thermal stability
- High operating junction temperature range (+175°C)
- D2PAK-compatible 4-pin TO-247-4 package
Original – Micro Commercial Components
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Siltronic AG has published its forecast for the financial year 2024 in an ad-hoc announcement. Due to the weakness in demand, as a result of elevated customer inventories and the associated further postponement of delivery volumes, the Executive Board expects sales for the current financial year to be in the region of the previous year.
The first six months of the financial year 2024 are likely to be affected most by the postponement of delivery volumes, meaning that sales for this reporting period are expected to be at the level of H2 2023. The forecast is based on a Euro/US Dollar exchange rate of 1.10. On a positive note, average selling prices are expected to remain stable.
The EBITDA margin, before ramp costs, will also be in the region of the previous year. Due to the commissioning of our new state-of-the-art 300 mm fab in Singapore, the margin will be reduced by up to three percentage points compared to the previous year. Ramp costs primarily comprise energy, material and labor costs.
“Our strategic growth targets until 2028 remain unchanged. In the short-term, however, the continuing weakness in demand will weigh on the development in the financial year 2024. In addition, the expected ramp costs for our new 300 mm fab in Singapore will become noticeable. With the increase in production volume over the next few years, the fab will contribute significantly to the profitable growth of Siltronic. Therefore, we stick to our medium-term ambition and expect sales to grow to more than EUR 2.2 billion and an EBITDA margin in the high 30’s until 2028,” commented Dr. Michael Heckmeier, CEO of Siltronic AG.
The Executive Board expects a noticeable reduction in energy and material costs (before ramp costs) in 2024 compared to the previous year. However, the positive effect will roughly be compensated by rising labor tariffs and the lower currency hedging result compared to the previous year. The high level of capital expenditure in recent years will almost double depreciation and amortization compared to the previous year. As a result, the EBIT will be significantly lower than in the previous year.
As already announced, capital expenditure will be more than halved compared to the previous year’s record level of EUR 1,316 million. Therefore, the company expects a significant improvement in net cash flow, although it will still remain significantly negative.
Growth targets until 2028 remain unchanged
As communicated in November 2023, significant sales growth to more than EUR 2.2 billion and an improvement of the EBITDA margin to the high 30’s are expected until 2028. This confidence is driven by the increasing relevance of global megatrends such as artificial intelligence, digitalization and electromobility and will lead to a sharp rise in demand for semiconductors and therefore also for wafers. The increase in Group profitability will be primarily driven by expected volume growth and higher cost efficiency, which will be significantly above the expected inflation-related cost increases.
Future use of funds with focus on growth, innovation and debt reduction –
Dividend proposal of EUR 1.20 for 2023 due to persistent weakness in demandSiltronic will use the cash flows generated as a result of the above mentioned targets primarily for further organic growth, strengthening its innovative power and reducing debt. The latter had increased noticeably due to the high level of capital expenditure in the recent past. Nevertheless, Siltronic shareholders will continue to participate in the company’s success through a dividend. In view of the current difficult market situation, the Executive Board will propose to the Annual General Meeting on May 13, 2024 the payment of a dividend of EUR 1.20 per share for the financial year 2023 and thus a payout ratio of around 20 percent of the Group profit attributable to Siltronic shareholders.
“As a company in a capital-intensive and cyclical industry, we know how important a solid balance sheet policy and a forward-looking liquidity management are. That is why we will put an even stronger focus on our costs and capex this year. In view of the upcoming refinancing needs, we are convinced that our dividend proposal of EUR 1.20 represents an appropriate balance between capital discipline on the one hand and dividend continuity for our shareholders on the other,” explains Claudia Schmitt, CFO of Siltronic AG.
Despite this noticeable reduction compared to the previous year, Siltronic confirms its dividend policy for the future, according to which around 40 percent of the Group profit determined in accordance with IFRS principles, attributable to the shareholders of Siltronic AG, will be distributed. The upper limit remains unchanged at EUR 3.00 per dividend-bearing share.
Original – Siltronic
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Innoscience Technology has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus etc.
The new 100V VGaN (INV100FQ030A) can be employed to achieve high efficiency in 48V or 60V battery management systems (BMS), as well as for high-side load switch applications in bidirectional converters, switching circuits in power systems, and other fields. Such device it is ideal in application such as home batteries, portable charging station, e-scooters, e-bikes etc.
One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to achieve bidirectional switching of battery charging and discharging, further reducing on-resistance and loss significantly with respect to traditional Silicon solution. BOM count, PCB space and costs are also reduced accordingly.
The INV100FQ030A 100V VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices feature an extremely low gate charge of just 90nC, ultra-low dynamic on-resistance of 3.2mΩ and small, 4x6mm package size.
Dr. Denis Marcon, General Manager, Innoscience Europe comments: “Innoscience’s continuous innovation and development of our core technology plus our 8-inch wafer GaN IDM model will accelerate the miniaturization of systems, making them more efficient and energy-saving.”
Innoscience ‘s 100V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.
Original – Innoscience Technology
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Power Integrations announced financial results for the quarter and year ended December 31, 2023. Net revenues for the fourth quarter were $89.5 million, down 29 percent compared to the prior quarter and down 28 percent from the fourth quarter of 2022. GAAP net income for the fourth quarter was $14.3 million or $0.25 per diluted share compared to $0.34 per diluted share in the prior quarter and $0.40 per diluted share in the fourth quarter of 2022.
For the full year, net revenues were $444.5 million, compared to $651.1 million in the prior year. Full-year GAAP net income was $55.7 million or $0.97 per diluted share compared to $2.93 per diluted share in the prior year. Full-year cash flow from operations was $65.8 million.
In addition to its GAAP results, the company provided non-GAAP measures that for the fourth quarter of 2023 exclude stock-based compensation, amortization of acquisition-related intangible assets and the related tax effects. Non-GAAP net income for the fourth quarter of 2023 was $12.7 million or $0.22 per diluted share compared to $0.46 per diluted share in the prior quarter and $0.48 per diluted share in the fourth quarter of 2022. For the full year, non-GAAP net income was $74.5 million or $1.29 per diluted share compared to $3.29 per diluted share in the prior year. A reconciliation of GAAP to non-GAAP financial results is included with the tables accompanying this press release.
Commented Balu Balakrishnan, chairman and CEO of Power Integrations: “Fourth-quarter revenues declined as expected, and we project first-quarter sales to be about flat sequentially due to continued soft demand and elevated supply-chain inventories. However, channel inventory fell significantly in the fourth quarter, and we expect a further reduction in the first quarter. Based on lower inventories and seasonal patterns we expect sequential revenue growth beginning in the June quarter. We also expect gross margin to rise in the June quarter driven by the dollar/yen exchange rate, higher manufacturing utilization and end-market mix.”
During the fourth quarter Power Integrations repurchased 680 thousand shares of its common stock for $47.4 million. The company had $26.0 million remaining on its repurchase authorization as of December 31, 2023. Power Integrations paid a dividend of $0.20 per share on December 29, 2023, and will pay a dividend of $0.20 per share on March 29, 2024, to stockholders of record as of February 29, 2024.
Financial Outlook
The company issued the following forecast for the first quarter of 2024:
- Revenues are expected to be $90 million plus or minus $5 million.
- GAAP gross margin is expected to be approximately 51.5 percent; non-GAAP gross margin is expected to be approximately 52.5 percent. The difference between GAAP and non-GAAP gross margins is equally attributable to stock-based compensation and amortization of acquisition-related intangible assets.
- GAAP operating expenses are expected to be approximately $49 million; non-GAAP operating expenses are expected to be approximately $42.5 million. Non-GAAP operating expenses are expected to exclude about $6.5 million of stock-based compensation.
Original – Power Integrations
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JCET Group announced that the company’s holding company, JCET Automotive Electronics (Shanghai) Co., Ltd., has successfully secured a RMB 4.4 billion capital increase. The agreement was ratified by the Fourth Meeting of the Eighth Board of Directors and the First Extraordinary General Meeting of Shareholders in 2024, being signed and taking effect on February 5, 2024.
The capital aims to support the construction of JCET’s first intelligent automotive-grade chip advanced packaging flagship factory.
Located in Shanghai’s cutting-edge Lingang industrial hub in eastern China, the JCET Automotive Chip Back-end Manufacturing Base spans over 130,000 square meters, with a dedicated factory area of approximately 200,000 square meters. Construction has accelerated since its commencement in August 2023. Equipment entry is anticipated in the first half of 2025.
Leveraging JCET’s industry-leading technology and resources, the project also includes a pilot line dedicated to manufacturing automotive chip products in China. It focuses on packaging automotive computing chips, power modules and more, optimizing packaging processes and materials while fully implementing automation solutions.
The completed facility will serve customers worldwide and has already garnered significant attention from major car manufacturers and chip suppliers. It caters to a broad spectrum of automotive applications, including ADAS sensors, high-performance computing, interconnectivity, and power modules – driving advancements in performance, reliability, and automation across the entire industry chain.
JCET has experienced rapid expansion within the automotive electronics sector in recent years. The company’s automotive electronics revenue achieved a CAGR exceeding 50% from 2019 to 2022. This momentum continued in the first three quarters of 2023, with revenue in this segment increasing by 88% year-on-year. JCET’s downstream applications not only cover power management, but also include areas such as autonomous driving, infotainment systems, various sensors, and vehicle networking involved in automotive intelligence.
Furthermore, JCET’s close collaboration with customers through the pilot line allows them to secure production capacity in the Lingang facility in advance. Doing so significantly streamlines the verification and introduction processes for future customer products. This fosters a seamless transition from early development to mass production, enabling both parties to capitalize on the vast upcoming opportunities in the automotive semiconductor market.
Original – JCET
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Renesas Electronics Corporation announced consolidated financial results in accordance with IFRS for the year ended December 31, 2023.
Summary of Consolidated Financial Results (Note 1, 4)
Year ended December 31, 2023 Billion Yen % of Revenue Revenue 1,469.4 100.0 Operating profit 390.8 26.6 Profit attributable to owners of parent 337.1 22.9 Capital expenditures (Note 2) 75.5 Depreciation and amortization 186.0 R&D expenses (Note 3) 233.5 Yen Exchange rate (USD) 140 Exchange rate (EUR) 151 As of December 31, 2023 Billion Yen Total assets 3,167.0 Total equity 2,005.6 Equity attributable to owners of parent 2,001.6 Equity ratio attributable to owners of parent (%) 63.2 Interest-bearing liabilities 667.7 - Note 1: All figures are rounded to the nearest 100 million yen.
- Note 2: Capital expenditures refer to the amount of capital for property, plant and equipment (manufacturing equipment) and intangible assets based on the amount of investment decisions made during the year ended December 31, 2023. However, the investments from Dialog Semiconductor Limited (hereinafter “Dialog”) and Celeno Communications Inc. (hereinafter “Celeno”) are listed as an input basis. It should be noted that as of September 29, 2023, Celeno changed its company name from Celeno Communications Inc. to Renesas Semiconductor Design US Inc.
- Note 3: R&D expenses include capitalized R&D expenses recorded as intangible assets.
- Note 4: The allocation of the acquisition costs for the business combination with Steradian Semiconductors Private Limited (hereinafter “Steradian”) and Panthronics AG (hereinafter “Panthronics”) has been revised at the end of three months ended March 31, 2023, and at the end of the three months ended December 31, 2023, respectively. These revisions have been reflected in the consolidated financial results for the year ended December 31, 2022 as well as the consolidated financial results for the three months ended June 30 and September 30, 2023. As of October 12, 2023, Panthronics changed its corporate name to Renesas Design Austria GmbH.
Original – Renesas Electronics
