• Texas Instruments Announced New Environmental Sustainability Targets

    Texas Instruments Announced New Environmental Sustainability Targets

    2 Min Read

    Texas Instruments announced new environmental sustainability targets that expand the company’s use of renewable electricity over the next six years, with key milestones to reach 100% in its 300mm manufacturing operations by 2025, 100% in its U.S. operations by 2027, and 100% in its worldwide operations by 2030. 

    As the company expands its internal manufacturing capacity to support customer demand, these goals will ensure that TI’s industry-leading 300mm wafer fabs, as well as its newest assembly and test sites, will be entirely powered by renewable electricity. 

    “Our semiconductors play a critcal role in helping our customers developer smaller, more efficient and affordable technology that makes electrification, renewable energy and energy storage systems possible,” said Heidi Means, TI’s vice president of Worldwide Environmental, Safety and Health. “These short- and medium-term energy goals will continue TI’s positive trajectory to reduce our environmental impact while we continue to expand our manufacturing capacity to support our customers.”

    TI has steadily grown its use of renewable electricity from a combination of sources including onsite solar and power purchase agreements (PPAs). Since 2020, the company has:

    • Continued to increase its absolute use of renewable electricity annually.
    • Shifted its operations in the Philippines, which includes two assembly and test sites, to 100% renewable electricity.
    • Invested in the company’s first onsite, rooftop solar installation at its Bangalore, India, site.
    • Started receiving more than 65MW of renewable electricity from its long-term PPA investments in wind and solar energy projects in North Texas.

    Original – Texas Instruments

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  • Toshiba Started Mass Production of the Third Generation 1700 V SiC MOSFET Module

    Toshiba Started Mass Production of the Third Generation 1700 V SiC MOSFET Module

    2 Min Read

    Toshiba Electronic Devices & Storage Corporation has started mass production of a 3rd generation silicon carbide (SiC) 1700 V and drain current (DC) rating 250 A of SiC MOSFET module “MG250V2YMS3” for industrial equipment and has expanded its lineup.

    The new product MG250V2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.8 V (typ.). It also offers low switching loss with low turn-on switching loss of 18 mJ (typ.) and low turn-off switching loss of 11 mJ (typ.). This helps to reduce power loss of equipment and the size of cooling device.

    MG250V2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

    Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of four existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.

    Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

    Applications

    Industrial equipment

    • Inverters and converters for railway vehicles
    • Auxiliary power supply for railway vehicles
    • Renewable energy power generation systems
    • Motor control equipment for industrial equipment
    • High frequency DC-DC converters, etc.

    Features

    • Low drain-source on-voltage (sense):
      VDS(on)sense=0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C)
    • Low turn-on switching loss:
      Eon=18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
    • Low turn-off switching loss:
      Eoff=11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
    • Low stray inductance:
      LsPN=12 nH (typ.)

    Original – Toshiba

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  • Vishay Intertechnology and Nexperia Close Newport Wafer Fab Deal

    Vishay Intertechnology and Nexperia Close Newport Wafer Fab Deal

    1 Min Read

    Vishay Intertechnology, Inc. and Nexperia B.V. announced in November 2023 that they had entered into an agreement that Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K.

    At the time of that announcement, the closing of Newport wafer fab transaction was subject to UK government review, the purchase rights of a third party, and customary closing conditions. Nexperia is pleased to announce that all conditions to the sale have now been met and the sale of Newport wafer fab to Vishay is now finalised, today, 6th March, securing a future for its employees and for the site.

    Original – Nexperia

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  • Privacy Policy

    10 Min Read
    Interpretation

    The words of which the initial letter is capitalized have meanings defined under the following conditions. The following definitions shall have the same meaning regardless of whether they appear in singular or in plural.

    Definitions

    For the purposes of this Privacy Policy:

    • Account means a unique account created for You to access our Service or parts of our Service.
    • Company (referred to as either “the Company”, “We”, “Us” or “Our” in this Agreement) refers to Power Semiconductors Weekly platform.
    • Device means any device that can access the Service such as a computer, a smartphone or a digital tablet.
    • Personal Data is any information that relates to an identified or identifiable individual.
    • Service refers to the Website.
    • Service Provider means any natural or legal person who processes the data on behalf of the Company. It refers to third-party companies or individuals employed by the Company to facilitate the Service, to provide the Service on behalf of the Company, to perform services related to the Service or to assist the Company in analyzing how the Service is used.
    • Usage Data refers to data collected automatically, either generated by the use of the Service or from the Service infrastructure itself (for example, the duration of a page  visit).
    • Website refers to Power Semiconductors Weekly platform, accessible from https://www.powersemiconductorsweekly.com/
    • You means the individual accessing or using the Service, or the company, or other legal entity on behalf of which such individual is accessing or using the Service, as applicable.
    Collecting and Using Your Personal Data

    Types of Data Collected

    • Personal Data

    While using Our Service, We may ask You to provide Us with certain personally identifiable information that can be used to contact or identify You. Personally identifiable information may include, but is not limited to:

    • Email address
    • First name and last name
    • Company name
    • Job function
    • Use of Your Personal Data

    The Company may use Personal Data for the following purposes:

    • To provide and maintain our Service, including to monitor the usage of our Service.
    • To manage Your Account: to manage Your registration as a user of the Service. The Personal Data You provide can give You access to different functionalities of the         Service that are available to You as a registered user.
    • To contact You: To contact You by email, telephone calls, SMS, or other equivalent  forms of electronic communication, such as a mobile application’s push notifications regarding updates or informative communications related to the functionalities, products or contracted services, including the security updates, when necessary or reasonable for their implementation.
    • To provide You with news, special offers and general information about other goods, services and events which we offer that are similar to those that you havealready purchased or enquired about unless You have opted not to receive such information.
    • To manage Your requests: To attend and manage Your requests to Us.
    • For other purposes: We may use Your information for other purposes, such as data analysis, identifying usage trends, determining the effectiveness of our promotional campaigns and to evaluate and improve our Service, products, services, marketing and your experience.

    We may share Your personal information in the following situations:

    • With Service Providers: We may share Your personal information with Service Providers to monitor and analyze the use of our Service, to contact You.
    • With Affiliates: We may share Your information with Our affiliates, in which case we will require those affiliates to honor this Privacy Policy. Affiliates include Our parent company and any other subsidiaries, joint venture partners or other companies that We control or that are under common control with Us.
    Retention of Your Personal Data

    The Company will retain Your Personal Data only for as long as is necessary for the purposes set out in this Privacy Policy. We will retain and use Your Personal Data to the extent necessary to comply with our legal obligations (for example, if we are required to retain your data to comply with applicable laws), resolve disputes, and enforce our legal agreements and policies.

    The Company will also retain Usage Data for internal analysis purposes. Usage Data is generally retained for a shorter period of time, except when this data is used to strengthen the security or to improve the functionality of Our Service, or We are legally obligated to retain this data for longer time periods.

    Transfer of Your Personal Data

    Your information, including Personal Data, is processed at the Company’s operating offices and in any other places where the parties involved in the processing are located. It means that this information may be transferred to — and maintained on — computers located outside of Your state, province, country or other governmental jurisdiction where the data protection laws may differ than those from Your jurisdiction.

    Your consent to this Privacy Policy followed by Your submission of such information represents Your agreement to that transfer.

    The Company will take all steps reasonably necessary to ensure that Your data is treated securely and in accordance with this Privacy Policy and no transfer of Your Personal Data will take place to an organization or a country unless there are adequate controls in place including the security of Your data and other personal information.

    Delete Your Personal Data

    You have the right to delete or request that We assist in deleting the Personal Data that We have collected about You.

    Our Service may give You the ability to delete certain information about You from within the Service.

    You may update, amend, or delete Your information at any time by signing in to Your Account, if you have one, and visiting the account settings section that allows you to manage Your personal information. You may also contact Us to request access to, correct, or delete any personal information that You have provided to Us.

    Please note, however, that We may need to retain certain information when we have a legal obligation or lawful basis to do so.

    Disclosure of Your Personal Data

    • Business Transactions

    If the Company is involved in a merger, acquisition or asset sale, Your Personal Data may be transferred. We will provide notice before Your Personal Data is transferred and becomes subject to a different Privacy Policy.

    • Law enforcement

    Under certain circumstances, the Company may be required to disclose Your Personal Data if required to do so by law or in response to valid requests by public authorities (e.g. a court or a government agency).

    • Other legal requirements

    The Company may disclose Your Personal Data in the good faith belief that such action is necessary to:

    • Comply with a legal obligation
    • Protect and defend the rights or property of the Company
    • Prevent or investigate possible wrongdoing in connection with the Service
    • Protect the personal safety of Users of the Service or the public
    • Protect against legal liability
    Security of Your Personal Data

    The security of Your Personal Data is important to Us, but remember that no method of transmission over the Internet, or method of electronic storage is 100% secure. However, we use commercially acceptable means to protect Your Personal Data

    • Links to Other Websites

    Our Service may contain links to other websites that are not operated by Us. If You click on a third party link, You will be directed to that third party’s site. We strongly advise You to review the Privacy Policy of every site You visit.

    We have no control over and assume no responsibility for the content, privacy policies or practices of any third party sites or services.

    • Changes to this Privacy Policy

    We may update Our Privacy Policy from time to time. We will notify You of any changes by posting the new Privacy Policy on this page.

    We will let You know via email and/or a prominent notice on Our Service, prior to the  change becoming effective and update the “Last updated” date at the top of this Privacy Policy.

    You are advised to review this Privacy Policy periodically for any changes. Changes to this Privacy Policy are effective when they are posted on this page.

    Contact Us

    If you have any questions about this Privacy Policy, You can contact us by sending an email to news@powersemiconductorsweekly.com

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  • Infineon Technologies Introduced the Second Generation of SiC MOSFET Trench Technology

    Infineon Technologies Introduced the Second Generation of SiC MOSFET Trench Technology

    3 Min Read

    Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.

    CoolSiC MOSFET Generation 2 (G2) technology continues to leverage performance capabilities of silicon carbide by enabling lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits to customers for various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies.

    A DC fast charging station for electric vehicles which is equipped with CoolSiC G2 allows for up to 10 percent less power loss compared to previous generations, while enabling higher charging capacity without compromising form factors. Traction inverters based on CoolSiC G2 devices can further increase electric vehicle ranges. In the area of renewable energies, solar inverters designed with CoolSiC G2 make smaller sizes possible while maintaining a high power output, resulting in a lower cost per watt.

    “Megatrends call for new and efficient ways to generate, transmit and consume energy. With the CoolSiC MOSFET G2, Infineon brings silicon carbide performance to a new level,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon.

    “This new generation of SiC technology enables the accelerated design of more cost-optimized, compact, reliable, and highly efficient systems harvesting energy-savings and reducing CO 2 for every watt installed in the field. It’s a great example of Infineon’s relentless spirit, constantly pushing for innovation to drive decarbonization and digitalization in the industrial, consumer and automotive sectors.”

    Contributing to high-performance CoolSiC G2 solutions, Infineon’s pioneer CoolSiC MOSFET trench technology provides an optimized design trade-off, allowing higher efficiency and reliability compared to SiC MOSFET technology available so far. Combined with the award-winning .XT packaging technology, Infineon is further increasing the potential of designs based on CoolSiC G2 with higher thermal conductivity, better assembly control and improved performance.

    Mastering all relevant power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers design flexibility and leading-edge application know-how that meet the expectations and demands of modern designers. Innovative semiconductors based on wide-bandgap (WBG) materials like SiC and GaN are the key to conscious and efficient use of energy in fostering decarbonization.

    Original – Infineon Technologies

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  • CG Power and Industrial Solutions, Renesas Electronics and Stars Microelectronics to Establish a Joint OSAT Venture in India

    CG Power and Industrial Solutions, Renesas Electronics and Stars Microelectronics to Establish a Joint OSAT Venture in India

    3 Min Read

    CG Power and Industrial Solutions Limited, a part of Tube Investments of India Limited and the Murugappa Group, Renesas Electronics Corporation and Stars Microelectronics (Thailand) Public Co. Ltd., a Thailand-based Outsourced Semiconductor Assembly and Test (OSAT) provider; had recently signed a Joint Venture Agreement (JVA) to establish a Joint Venture (JV) to build and operate an OSAT facility in India.

    The Union Cabinet, chaired by Prime Minister Shri Narendra Modi, approved the project of the JV under India’s Semiconductor scheme on February 29, 2024.

    The JV brings together unique capabilities of the partners with a vision to “Make in India for the World.” CG, with around 86 years of manufacturing expertise, is keen to build semiconductor capabilities and ecosystem in India. Renesas, a leading semiconductor company headquartered in Japan, will provide advanced semiconductor technology and expertise. Stars Microelectronics, a Thai based OSAT, will provide both technology for legacy packages and training and enablement.

    The JV will be 92.3% owned by CG, with Renesas and Stars Microelectronics each holding equity capital of approximately 6.8% and 0.9%, respectively. The JV plans to invest INR 7,600 crores over a five-year period, which will be financed through a mix of subsidies, equity, and potential bank borrowings as required.

    The JV will set up a state-of-the-art manufacturing facility in Sanand, Gujarat, with a capacity that will ramp up to 15 million units per day. The JV will manufacture a wide range of products – ranging from legacy packages such as QFN and QFP to advanced packages such as FC BGA, and FC CSP. The JV will cater to industries such as automotive, consumer, industrial, 5G, to name a few.

    Commenting on this new venture, Mr. S. Vellayan, Chairman, CG Power and Industrial Solutions Limited, said, “CG’s entry into the semiconductor manufacturing marks a strategic diversification for us. Our partners, Renesas and Stars Microelectronics, will make our learning curves steeper and help us focus on innovation and excellence. 

    This is a very exciting phase for the entire nation, and we are very keen to build out India’s semiconductor capability and ecosystem.”

    Mr. Natarajan Srinivasan, Managing Director, CG Power and Industrial Solutions Limited, added, “It is a matter of great pride for CG to implement this project of National importance.”

    Commenting on the partnership, Mr. Hidetoshi Shibata, CEO of Renesas said, “India is a critical part of Renesas’ business. We value its innovative landscape and robust potential growth and are committed to accelerating our investment in India. By partnering with the Murugappa Group and Stars Microelectronics, we will bolster India’s semiconductor ecosystem and address the growing semiconductor demand for the customers worldwide.”

    Mr. Prompong Chaikul, Chairman of Executive Committee of Stars Microelectronics (Thailand) Public Co., Ltd added, “We are deeply honored to join forces in this thrilling venture. Leveraging our expertise and experience in OSAT, we are committed to providing robust support to ensure the success of this project in India.”

    Original – Renesas Electronics

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  • Magnachip Semiconductor Announced 2023 Financial Results

    Magnachip Semiconductor Announced 2023 Financial Results

    2 Min Read

    Magnachip Semiconductor Corporation announced financial results for the fourth quarter and full-year 2023.

    YJ Kim, Magnachip’s Chief Executive Officer commented, “As we reflect on the past year and look ahead, we’re shaping our future with the transformation of our business. First, we have shifted our Display business to be laser-focused on the burgeoning OLED market in China and our efforts there are already showing promising results. We now have two design-wins and a dedicated team on the ground to help build on this momentum. Additionally, we are working to optimize our Gumi Fab to transition from lower-margin Transitional Foundry Services to higher-margin Power products. Finally, we’ve restructured our company to streamline operations, enhance shareholder value and increase transparency for our investors with the completion of our legal separation of historical Display and Power businesses into MSS and PAS.”

    YJ continued, “Looking ahead, for full year 2024, we currently expect double-digit revenue growth in both the newly organized MSS and PAS businesses. We currently expect total consolidated company revenue for full year 2024 to remain relatively flat to slightly up due to the phase-out of Transitional Foundry Services. We also anticipate PAS gross margin to be challenged during the transition period while we convert the Transitional Foundry Services capacity to Power capacity, but we are committed to navigating this period with a clear focus on long-term value creation for shareholders.”

    Financial Highlights

    • Q4 revenue of $50.8 million was near the low-end of our guidance range.
    • Q4 gross profit margin was 22.7%, near the low-end of our guidance range.
    • Ended Q4 with no debt and cash of $158.1 million.
    • Repurchased approximately $8.2 million of stock during the quarter.
    • Full-year revenue of $230.1 million decreased 31.9% YoY.
    • Full-year gross profit margin was 22.4%, down 760 bps YoY.

    Operational Highlights

    • Secured 1st design-win and began initial shipment in Q4 for first generation OLED DDIC for after-service market.
    • Secured 2nd design-win following quarter close with leading Chinese smartphone OEM for spring launch.
    • Entered into strategic commercial partnership with Chinese watch solution provider to collaborate on OLED smartwatch display market.
    • Display and Power business separation and entity restructuring completed effective with the start of 2024; New businesses MSS (Mixed-Signal Solutions) and PAS (Power-Analog Solutions)

    Original – Magnachip Semiconductor

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  • Navitas Semiconductor Publishes Annual Financial Results

    Navitas Semiconductor Publishes Annual Financial Results

    4 Min Read

    Navitas Semiconductor Corporation announced unaudited financial results for the fourth quarter and full year ended December 31, 2023.

    “I am pleased to announce a record fourth quarter that caps off a year of more than doubling revenue for Navitas as we demonstrated strength across multiple markets,” said Gene Sheridan, CEO and co-founder. “While we are not immune to first half 2024 market headwinds, we see revenue growth accelerating in the second half based on our strong customer pipeline including major new wins in AI data centers, home appliances, solar inverters and a major satellite internet roll-out – all of which positions Navitas for strong growth in 2024 and beyond.”

    4Q23 Financial Highlights

    • Revenue: Total revenue grew to $26.1 million in the fourth quarter of 2023, a 111% increase from $12.3 million in the fourth quarter of 2022 and a 19% increase from $22.0 million in the third quarter of 2023.
    • Gross Margin: GAAP gross margin for the fourth quarter of 2023 was 42.2%, compared to 40.6% in the fourth quarter of 2022 and 32.3% for the third quarter of 2023. Non-GAAP gross margin for the fourth quarter of 2023 was 42.2% compared to 40.6% for the fourth quarter of 2022 and 42.1% for the third quarter of 2023.
    • Loss from Operations: GAAP loss from operations for the quarter was $26.8 million, compared to a loss of $31.2 million for the fourth quarter of 2022 and a loss of $28.6 million for the third quarter of 2023. On a non-GAAP basis, loss from operations for the quarter was $9.7 million compared to a loss of $12.4 million for the fourth quarter of 2022 and a loss of $8.7 million for the third quarter of 2023.
    • Cash: Cash and cash equivalents were $152.8 million as of December 31, 2023.

    FY 2023 Financial Highlights

    • Revenue: Total revenue grew to $79.5 million in 2023, a 109% increase from $37.9 million in 2022.
    • Gross Margin: GAAP gross margin for 2023 was 39.1%, compared to 31.5% in 2022. Non-GAAP gross margin for 2023 was 41.8% compared to 40.8% for 2022.
    • Loss from Operations: GAAP loss from operations for the year was $118.1 million, compared to a loss of $123.6 million for 2022. On a non-GAAP basis, loss from operations for the year was $40.3 million compared to a loss of $41.2 million for 2022.

    Market, Customer and Technology Highlights:

    • Electric Vehicle: Introduction of new GaNSafe technology plus new Gen-3 Fast silicon carbide is fueling demand for EV on-board and roadside chargers. SiC-based on-board chargers are in or moving to production this year with customers including top EV brands such as Zeekr, Volvo and Smart. Announced joint design center with Shinry – one of the top EV on-board charger suppliers for Hyundai, BYD, Honda, Geely and others.
    • Solar/Energy Storage: Displacement of silicon with GaNSafe and Gen 3 Fast SiC technologies continued with significant developments in 3 of the top 5 US solar OEMs, and the majority of the world’s top 10 solar manufacturers. SiC is shipping into this market today and GaN adoption is expected to ramp in late 2024.
    • Home Appliance / Industrial: Major new tier 1 home appliance win will drive additional revenues in late ‘24 – Navitas now engaged with 7 of the world’s top 10 home appliance OEMs. Customer designs are in process at 2 of the top 3 global leaders in industrial pumps and a top 3 global leader in heat pumps.
    • Datacenter: New GaNSafe and Gen 3 Fast SiC and Navitas’ dedicated design center is now achieving an unprecedented 4.5 kW, more than double the power density of legacy silicon solutions, to deliver accelerating power demands of AI data centers. Over 20 customer designs are expected to ramp production in 2024.
    • Mobile: Navitas now powers 5 newly released OPPO models and 8 newly released Xiaomi models with chargers ranging from 67 W to 120 W. Additional Samsung models now include powering the new Galaxy S24.
    • Other New Markets: GaN ICs have been designed into the ground-based terminal for a major internet satellite implementation to ramp in 2H24.

    Business Outlook

    First quarter 2024 net revenues are expected to be $23 million plus or minus $500 thousand. Gross margin for the first quarter is expected to be 41% plus or minus 50 basis points and operating expenses, excluding stock-based compensation and amortization of intangible assets, are expected to be approximately $21.5 million in the first quarter of 2024. Weighted-average basic share count is expected to be approximately 180 million shares for the first quarter of 2024.

    Original – Navitas Semiconductor

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  • JCET on Course to Build the Automotive Chip Advanced Packaging Flagship Factory

    JCET on Course to Build the Automotive Chip Advanced Packaging Flagship Factory

    3 Min Read

    JCET Group has recently confirmed that, following the approval of the capital increase for its subsidiary, JCET Automotive Electronics (Shanghai) Co., Ltd., the first round of RMB 1.551 billion was received on February 22nd. This supports the construction of JCET’s first intelligent and lean lighthouse factory for automotive chip advanced packaging.

    The automotive industry demands increasingly sophisticated chip solutions. Dedicated production lines and zero-defect standards are quickly becoming essential prerequisites for achieving industry excellence. In response to evolving market dynamics and customer expectations, JCET is orchestrating unified planning and operations within its automotive electronics business, delivering comprehensive solutions across various applications in the sector.

    To better cater to the needs of its global clientele, the JCET Automotive Chip Back-end Manufacturing Base was initiated in August 2023 in Lingang, Shanghai. Momentum has accelerated since then, and the infrastructure is now poised for comprehensive construction. Equipment entry is expected in the first half of 2025.

    Leveraging JCET’s rich R&D capabilities and resources, the project also includes a pilot line dedicated to automotive chip manufacturing in China. It focuses on fully automated assembly and packaging solutions for processor chips used in future automotive core components, along with complete packaging solutions for power modules of new energy vehicle core components. Through innovative solutions, the pilot line lays a solid foundation for the project to become a flagship factory.

    Simultaneously, JCET is meeting diverse customer demands by developing highly cost-competitive, environmentally friendly, and premium metal frames that comply with the stringent regulations for high-quality vehicles. The company has also implemented a fully traceable solution spanning the entire product process. The aforementioned pilot line has already obtained multiple national patents. In 2024, it is slated to complete the implementation and verification of existing innovations, continue collaboration with industry chain partners, and explore new materials and process solutions.

    The JCET Automotive Chip Back-end Manufacturing Base will serve major domestic and international customers. The project is garnering significant interest from key players, including OEMs, Tier 1 suppliers and IC suppliers. Strategic cooperation agreements have already been secured with several prominent partners.

    JCET’s close collaboration with customers through the pilot line allows them to secure production capacity in the Lingang facility in advance. Doing so significantly streamlines the verification and introduction processes for future customer products, enabling a seamless transition from early development to mass production. This strategic move helps customers capture critical market share in the rapidly growing automotive semiconductor market.

    Original – JCET

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  • Wise-integration Raises €15 million in Series B Funding Round

    Wise-integration Raises €15 million in Series B Funding Round

    3 Min Read

    Wise-integration, a French pioneer in digital control of gallium nitride (GaN) and GaN ICs for power supplies, announced financing of €15 million. The Series B round wasled by imec.xpand, with participation from Supernova Invest, BNP Paribas Developpement, Région Sud Investissement (RSI), Creazur, CASRA Capital and Angels for Greentech.

    The round will fuel mass production and commercial deployment of the company’s flagship products, WiseGan® and WiseWare®, its disruptive digital-control technology, and its support for clients globally as they adopt these solutions. It included the five investors from the previous funding and three new investors.

    CEO Thierry Bouchet said, “The €15 million of new funding will accelerate the company’sinternational expansion, ongoing R&D programs and the introduction of new products and solutions. “This funding will enable Wise-integration to accelerate our commercial development and product development and the launch of a new generation of high-performance GaN technology, which is designed to seamlessly integrate with digital controls and boost the efficiency and performance of power systems across various sectors,” Bouchet continued. “A third roadmap focus will be to broaden our WiseWare® product development, targeting high-value markets, such as industrial, telecom and automotive sectors.”

    Since its launch in 2020, the fabless company has established itself as an award-winning innovator in the power electronics industry, building a portfolio of more than 10 patent families. WiseGan® encompasses GaN power integrated circuits designed to maximize the benefits of GaN technology, including higher power density, efficiency and reduced heat generation. WiseWare® is a 32-bit, MCUbased, AC-DC digital controller optimized for GaN-based power supply architectures, offering simplified system design, a lower bill of materials and improved power density and efficiency.

    The company’s target markets include consumer electronics, from laptops to e-bikes, scooters and motorcycles, to industrial applications like robotics, as well as data centers and electric vehicles. All its solutions address the increasing demands for miniaturization, electrification and efficient power management.

    Wise-integration has established a first-class semiconductor GaN supply chain to support its mass production and commercialization strategy, while ensuring the most competitive costs in the market.

    “Wise-integration’s GaN technology can play a significant role in the global shift to electrification by enhancing the efficiency and performance of power systems across various sectors,” said Cyril Vančura, imec.xpand partner. “In the four years since its founding, this start-up has demonstrated the vision, drive, execution and technological knowhow to deliver game-changing power-electronics solutions, and we look forward to witnessing the next phase of its growth journey.”

    “With this new funding, Supernova Invest reaffirms its support for Wise-integration, a CEA-Leti spinoff that we have trusted since its creation,” said Damien Bretegnier, investment director, Supernova Invest. “We strongly believe in the huge potential of its WiseWare® digital control technology and associated WiseGan® components, anticipating a profound revolution in the power conversion market that propels GaN technology to replace legacy solutions even more rapidly.”

    “Wise-integration is one of the finest up and-coming companies in the hardware sector, a key sector in our beautiful region,” said Pierre Joubert, general director of RSI. “A high-potential company with a top management team, it fits in perfectly with the investment thesis of our Transition fund and its 100 percent Paris Agreement strategy. It has all the assets to become one of the strong links in the regional economic development strategy.”

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