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Infineon Technologies AG introduced the 600 V CoolMOS™ S7TA Superjunction MOSFET for automotive power management applications. Designed to meet the specific requirements of automotive electronics, the S7TA features an integrated temperature sensor that significantly improves the accuracy of junction temperature sensing, building on the advances made by its counterpart for industrial applications (CoolMOS S7T). The resulting benefits include improved durability, safety, and efficiency, all of which are essential in the automotive domain.
Like its industrial counterpart, the automotive-graded CoolMOS S7TA is particularly well suited for solid-state relay (SSR) applications, demonstrating superior R DS(on) and sensing accuracy, which is crucial for various automotive electronic devices that rely on efficient power management solutions. The integration of a Superjunction MOSFET with an embedded temperature sensor in the same package enhances the performance of SSRs and ensures dependable operation even under the most severe overload conditions, which is an absolute necessity for automotive applications where reliability is non-negotiable.
The embedded sensor of the S7TA offers a 40 percent increase in accuracy and up to four times faster response time than standalone on-board sensors. Such advances in temperature monitoring are critical for automotive applications, enabling individual monitoring within multi-device systems, thereby improving reliability, and preventing thermal issues that can lead to system failures.
The optimized power transistor utilization of the CoolMOS S7TA promises not only superior performance, but also precise control of the output stage. This level of precision is key to reducing power consumption and energy costs, which is a pressing concern in automotive applications where efficiency translates directly into vehicle range and operational economy. Compared to traditional electromechanical relays, the CoolMOS S7TA offers a significant improvement in total power dissipation.
The CoolMOS S7TA further provides a high overcurrent threshold, which serves to increase the reliability of the SSR and reduce the likelihood of failures. The robust switching solution paves the way for safer operations within the vehicle, and the enhanced robustness of the MOSFETs leads to a longer automotive relay lifecycle, resulting in lower maintenance and replacement costs.
The 600 V CoolMOS S7TA provides an optimized solution for potential applications that are central to the safety and functionality of modern vehicles. These include critical components such as circuit breakers, encompassing high-voltage battery disconnect switches, low-frequency switches for both direct current (DC) and alternating current (AC), as well as high-voltage electronic fuses (HV eFuses).
Infineon also introduces the EVAL_eFuse_PoC_400V_S7, a proof-of-concept board that showcases the robustness and versatility of an automotive eFuse. The board demonstrates a reliable method for safeguarding automotive electrical systems, featuring an interchangeable power stage that adapts to various operating conditions with different voltage classes and cooling methods.
Both the 600 V CoolMOS S7T in automotive and industrial grades are already available and come in QDPAK TSC and BSC packages, offering a range of R DS(on) from 17 to 40 mΩ. The 10 mΩ variant will be added to the lineup in the second half of 2024. Further information is available at www.infineon.com/s7ta and www.infineon.com/s7t.
Original – Infineon Technologies
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Wolfspeed is expanding its portfolio of industry-leading SiC MOSFET & Schottky diode discrete products with the addition of the new Top Side Cooled (TSC) package: the U2. With options ranging from 650 V – 1200 V, Wolfspeed’s TSC products significantly increase system level power density and efficiency, while improving thermal management and board layout flexibility.
Applications:
- Electric Vehicle (EV) On-Board Chargers and Fast Charging Infrastructure
- EV & Industrial HVAC (Heating, Ventilation, and Air Conditioning) Motor Drives
- High Voltage DC/DC Converters
- Solar and Energy Storage
- Industrial Motor Drives
- Industrial Power Supplies
Features:
- Low profile, surface mount footprint
- Top side cooling with low Rth
- AEC-Q101 Automotive Qualified Options
- SiC MOSFETs Available from 750 V – 1200 V
- SiC Schottky Diodes Available from 650 V – 1200 V
Benefits:
- Highest Creepage Distance Available for SiC Top Side Cooled Packages
- Higher System Power Density with Optimized PCB Layouts
- High Volume Manufacturing Capability with Surface Mount Footprint
What’s New? Advantages of New Top Side Cooled Packages
Most standard surface mount discrete power semiconductors remove heat through the bottom of the device by making direct contact with the power circuit board (PCB), which utilizes a heat sink or cooling plate attached underneath. This method is common across many different power electronics applications, particularly when size and weight requirements do not limit PCB mounting and heat sinks.
Top side cooled (TSC) devices, on the other hand, dissipate heat through the top side of the package. Inside TSC packages, the die sits upside down in the upper portion of the package to allow heat to flow directly to the top surface. Generally, TSC devices are best suited for high-performance applications such as automotive and e-mobility systems where high-power densities, advanced thermal management solutions, and small footprints are essential. Within these applications, TSC devices help address cooling requirements by enabling maximum power dissipation and optimizing thermal performance.
TSC designs also allow for dual-side usage of the PCB since the bottom board surface is no longer needed for the heatsink interface. Removing the heatsink from the thermal path not only creates an improved overall system thermal impedance; it also allows for automated assembly, which can increase manufacturing throughput for a more efficient and cost-effective solution.
Evaluating U2 TSC Devices Made Easy with SpeedVal™ Kit
Wolfspeed’s SpeedVal Kit Modular Evaluation Platform allows engineers to reduce the transition from silicon to silicon carbide (SiC) with a flexible set of building blocks for in-circuit evaluation of system performance at real operating points. The recently released 3-phase motherboard enables high-power testing with static loads as well as a foundation for advanced motor control firmware development.
Evaluation boards for a variety of Rdson ratings for Wolfspeed’s TSC MOSFET devices are coming soon.
SpeedVal™ Kit Modular Evaluation Platform Three-Phase Motherboard Putting U2 TSC Devices to Work: 13 kW Automotive HVAC Motor Drive Reference Design
Wolfspeed’s upcoming 13 kW motor drive reference design, featuring the TSC U2 package, demonstrates the benefits of U2 devices for 10 kW+ EV HVAC systems, which support thermal management of the cabin, battery, and electronics. Optimizing the efficiency and operating temperature range of the HVAC system with the implementation of SiC enables systems designers to bring fast charging to the driver in under 15 minutes, while also extending the driving range per charge for the lifetime of the car. Utilizing Wolfspeed’s new CRD-13DA12N-U2 13 kW HVAC reference design, SiC enables:
Reference Design Specifications:
- Input Voltage: 550 – 850 V
- Max Output Current: 25 A
- Max Output Power: 13 kW
- Switching Frequency: 10 – 32 kHz
- Peak Efficiency: > 98%
Original – Wolfspeed
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Vincotech is returning to PCIM, the world’s leading power electronics expo and conference to showcase its latest technologies and innovations, including GaN and many more products for Motion Control, Renewable and Power Supply use cases. In keeping with this year’s expo slogan “Empowering your ideas,” the company’s application-specific capabilities will be on prominent display.
Highly anticipated, PCIM Europe event is sure to draw thousands of visitors, and Vincotech is thrilled to be back. “Our fair booth will feature all kinds of new tech, and we can’t wait to show customers and prospects how our solutions benefit their business. Hot topics, innovations, donations – expect all that and more”, says Edoardo Guiotto, VP Sales and Marketing.
This year’s big talking point is the company’s commitment to application-specific solutions enabled by a wide range of industrystandard and proprietary housings, multi-source chipsets, expedited time-to-market, and early sample availability. Highlights include a solution for SEW-EURODRIVE, showcased with a station displayed at the booth.
- One spotlight will be on GaN, a cutting-edge technology that has the industry abuzz. Vincotech, which is driving advances on this front, is going to demonstrate the potential, benefits, and applications of GaN in power modules.
- Innovations in motor control applications will also figure prominently. Reliability and performance packed into a small footprint – that’s what sophisticated motor control use cases need. Highly integrated and engineered to support complex electrical and thermal designs, Vincotech’s embedded drive solutions meet these demands. For Industrial drives the tandem diode solutions are available for SixPack, Twin SixPack and PIM topologies including custom and industry standard power module housings.
- Renewables are on the rise. Built on decades of experience in solar, Vincotech’s extensive portfolio of PV & ESS solutions is second to none. Residential, industrial, commercial – every use case and power range is well-covered.
- Leading the way in power supply, Vincotech offers outstanding power module solutions. Highlights in DC fast charging include a built-to-boost 3-phase resonant converter, the fastPACK 1 GaN 2-in-1 featuring advanced Wide Bandgap (WBG) tech, and many ultra-compact, integrated solutions and low inductive modules. Enhancing the performance of Uninterruptible Power Supplies (UPS), Vincotech has a wide range of solutions from 20 kW – 250 kW power.
Like in previous years, Vincotech teams up with Plan International Germany, bringing an exciting VR experience to the event. Visitors can challenge themselves by flying over the mountains in virtual reality, while knowing their participation supports a greater good. Vincotech will match all flights with a donation, targeting a Plan International project for teenagers in Ecuador.
Vincotech’s PCIM presentations at a glance:
Tuesday, June 11
11:15 Exhibitor forum
David Chilachava: NEW fastPACK 1 GaN – The Best Utilization of GaN Technology Benefits in an Industrial Power Module PackageWednesday, June 12
11:20 Bodo’s panel discussion on “SiC Wide Bandgap Design, the Future of Power”)
Evangelos Theodossiu: SiC power module design: Why does it matter?
14:30 Conference, Room: München 2
A joint presentation with Siemens: Optimizing a Power Module for Electrical and Thermal Performance and Symmetry Using EDA ToolsThursday June 13
11:15 Conference poster sessions
Tiago Jappe: Power Module Solutions with Improved Reliability for Elevator Drive Applications
14:35 Exhibitor forum
Matthias Tauer: flow E3 Full SiC Power Module with Direct Pressed Substrate for Superior Thermal Performance and ReliabilityOriginal – Vincotech
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Infineon Technologies AG introduced the 600 V CoolMOS™ 8 high voltage superjunction (SJ) MOSFET product family. The devices combine the best features of the 600 V CoolMOS 7 MOSFET series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families. The new superjunction MOSFETs enable cost-effective Si-based solutions that enhance Infineon’s wide-bandgap offering. They are equipped with an integrated fast body diode, making them suitable for a wide range of applications such as server and industrial switched-mode power supply units (SMPS), EV chargers, and micro-solar.
The components come in SMD QDPAK, TOLL and ThinTOLL 8 x 8 packages, which simplifies designs and reduces assembly costs. At 10 V, the 600 V CoolMOS 8 SJ MOSFETs offer 18 percent lower gate charge (Q g) than the CFD7 and 33 percent lower than the P7. At 400 V, the product family offers a 50 percent lower output capacitance C OSS than the CFD7 and the P7.
In addition, the turn-off losses (E oss) have been reduced by 12 percent compared to the CFD7 and the P7 and the reverse recovery charge (Q rr) is 3 percent lower compared to the CFD7. Furthermore, the devices offer the lowest reverse recovery time (t rr) on the market and the thermal performance has been improved by 14 to 42 percent compared to the previous generation.
With these features, the devices offer high efficiency and reliability in soft-switching topologies such as LLC and ZVS phase-shift full-bridge. They also provide excellent performance levels in PFC, TTF and other hard-switching topologies. Due to their optimized R DS(on), the devices offer higher power density, allowing products in a Si-based super junction (SJ) technology to be reduced to a single-digit value of 7 mΩ.
Infineon will showcase the 600 V CoolMOS 8 SJ MOSFETs at the Infineon booth (Hall 7 / Booth 470) at PCIM 2024 in Nuremberg. Samples of the 600 V CoolMOS 8 SJ MOSFETs are now available. More information is at www.infineon.com/coolmos8.
Original – Infineon Technologies
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Navitas Semiconductor announced their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.
The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.
The G3F GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology. and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower RDS(ON) under real-life operation at high temperatures compared to competition.
Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.
Navitas’ latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe™ Power ICs in the LLC stage, a power density of 138 W/inch3 and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.
For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.
“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”
Original – Navitas Semiconductor
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Cambridge GaN Devices is partnering with Qorvo® to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications. CGD aims to speed the use of GaN power ICs in BLDC and PMSM applications, resulting in higher power, highly efficient, compact and reliable systems. Qorvo is building an EVK for its PAC5556A motor/control IC that is powered by CGD’s ICeGaN™ (IC-enhanced GaN) technology.
GIORGIA LONGOBARDI | CEO, CGD
“Because ICeGaN – unlike other GaN implementations from other companies – integrates the interface circuitry but not the controller together with the GaN HEMT, it is simple to combine with highly integrated motor controller and drive ICs such as Qorvo’s PAC5556A 600 V High Performance BLDC / PMSM Motor Controller and Driver. We are delighted to partner with Qorvo to enable motor controller and driver applications to enjoy the benefits of GaN power.”JEFF STRANG | GENERAL MANAGER, POWER MANAGEMENT BUSINESS UNIT, QORVO
“Wide bandgap semiconductors such as GaN and SiC are being actively considered in various motor control applications for the power density and efficiency benefits they bring. CGD’s ICeGaN technology offers ease of use and reliability, two crucial factors for motor control and drive designers. We are excited to see the reaction of design engineers when they experience the power of GaN combined with our highly integrated PAC5556A 600V BLDC motor control solution.”GaN brings a variety of benefits, primarily lower losses, which results in higher efficiency, leading to increased power availability and less heat. This reduces the need for complex, bulky, and costly thermal management solutions, resulting in smaller, more powerful systems that have a longer life. GaN also delivers higher torque at low speeds and, therefore, more accurate control. Also, GaN allows high-speed switching, which can reduce audible noise, which is especially valued for domestic items such as ceiling fans, heat pumps, and refrigerators.
In addition to being easy to use, ICeGaN offers several other significant benefits over other GaN devices. The gate drive voltage of ICeGaN is compatible with IGBTs. Because ICeGaN integrates the Miller clamp within the GaN IC, a negative Turn-Off voltage is not required, and low-cost current drivers can be used. Finally, ICeGaN includes a useful current sense function, simplifying circuit design and reducing BOM.
The reference design is available today, and EVK RD5556GaN will be available for purchase in Q324. It will also be shown on CGD’s booth Hall 7 643 at the PCIM exhibition in Nuremberg, Germany, 11-13 June. Qorvo will also exhibit at PCIM, on booth Hall 7 406.
Original – Cambridge GaN Devices
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Alpha and Omega Semiconductor Limited announced the expansion of their package portfolio options available for their second generation 650V to 1200V αSiC MOSFETs. Applicable to many critical applications such as xEV charging, solar inverters, and industrial power supplies, the new package selections give designers the added flexibility of multiple system optimization options to further maximize system efficiency while streamlining their manufacturing process.
AOS will showcase its expanded surface mount and module package options at PCIM Europe 2024 in Nuremberg, Germany, June 11-13.
The first new surface mount package is available for the AOBB040V120X2Q, AOS’ new 1200V/40mOhm αSiC MOSFET in a standard D2PAK-7L surface mount package. This AEC-Q101 qualified product is designed to replace traditional through-hole packages. It is ideal for applications such as on-board chargers (OBCs) where efficient cooling can be provided by vias and backside PCB heatsinks, simplifying the assembly flow and maximizing the power density. In addition, the low inductance package combined with the fast driver sourcesense connection positions these AOS αSiC MOSFETs as one of the most efficient power-switching solutions in the market.
For additional design flexibility, AOS is releasing its GTPAK™ surface mount package with topside cooling features. In designs where a topside-mounted heatsink is viable, the direct heat path from the GTPAK minimizes the thermal resistance. It enables higher power dissipation for more effective PCB routing. The first AOS product in GTPAK is the AOGT020V120X2. This 1200V/20mOhm αSiC MOSFET is an ideal solution to meet the requirements of high-efficiency solar inverter and industrial power supply applications.
Finally, AOS announced the AOH010V120AM2 as the first product in its new AlphaModule™ high power baseplate-less module family. This 1200V/10mOhm half-bridge αSiC module features press-fit pins and an integrated thermistor. It is in a standard footprint module that enables the replacement of multiple discrete devices into a single compact form factor while simplifying both the mechanical and electrical design by providing a clear separation of electrical and cooling paths. Single modules are suitable for residential solar inverters, or several modules in parallel will allow scaling to power levels necessary to drive the needs of fast DC charging stations.
“With the continued growth in EVs, energy infrastructure, and renewable energy, we continue to see increased interest in our αSiC MOSFETs. The expansion of our product portfolio to include these new advanced package options gives our customers the design flexibility they need to take advantage of our superior αSiC performance and continue the trend of pushing power systems to higher density and efficiency,” said David Sheridan, Vice President of SiC products at AOS.
Original – Alpha and Omega Semiconductor
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Vincotech introduced a GaN-based power module which provides an effective solution for highly efficient power conversion in isolated DC/DC converters or DC/AC inverter stages. It offers a 2-in-1 solution, and can be utilized either as a 10mOhm H-Bridge or 5mOhm half-bridge.
The module features E-mode GaN HEMTs chip technology, promoting high efficiency and power density, and is available in an industry-standard package with low stray loop inductance. It is compatible with external gate drives, offering engineers high design flexibility.
Main benefits
- Highest design flexibility with external gate driver, enabling slew rate control for low EMC
- Low voltage overshoots due to integrated snubber capacitors
- High power density and small footprint for soft switching above 500kHz
- Kelvin source pin and low inductive gate loop for clean switching behavior
Applications
- DC fast charger
- Solar inverter
- UPS
Original – Vincotech
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Mitsubishi Electric Corporation announced that it will launch a web-based service on June 28 to provide data on the design and validation of a proprietary prototype inverter equipped with a module containing three LV100 insulated gate bipolar transistors (IGBTs), aiming to help customers accelerate their development of high-power inverters for applications such as photovoltaic power-generation systems.
Customers involved in developing prototype inverter systems with LV100 packages are expected to use reference information provided by the service to reduce their design, manufacture and validation workloads. The service will be exhibited at major trade shows, including Power Conversion Intelligent Motion (PCIM) Europe 2024 in Nuremberg, Germany from June 11 to 13.
The prototype inverter includes a package of three parallel LV100 industrial IGBTs in a module measuring 100mm x 140mm module, typical of those used in high-power inverter systems. The reference data will include design data, such as geometry, component layout and electrical circuitry, as well as evaluation data such as temperatures, short-circuit protection, current balance and computer-aided engineering (CAE) validation results.Original – Mitsubishi Electric
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Semikron Danfoss and Vincotech announced the renewal of their cooperation agreement for power semiconductor module packaging. The two enterprise’s alliance, dating back to 2003, has been extended to further strengthen MiniSKiiP packaging technology.
This move underscores Semikron Danfoss and Vincotech’s commitment to advancing MiniSKiiP and delivering cutting-edge solutions that meet the needs of the power electronics industry.
“The partnership with Vincotech is key to ensuring the safe supply of our number one motor drive module MiniSKiiP to our customers,” said Peter Sontheimer, Senior Vice President Industry Division at Semikron Danfoss. “We strongly believe that this type of arrangement is beneficial to the long-term health of the power electronics supply chain.”
Multiple source options for the package to further mitigate the supply chain risk, as well as standards-compliant design, are just a few of the benefits of this renewed cooperation agreement. Engineered for easy assembly and featuring service-friendly spring contacts, MiniSKiiP’s unique hardware has earned an excellent reputation for efficiency and performance in general purpose and servo motor drives.
“We are delighted to be renewing our partnership with Semikron Danfoss for the MiniSKiiP package technology,” said Edoardo Guiotto, VP Sales & Marketing at Vincotech. “This agreement reaffirms our dedication to deliver premium products to our customers and drive innovation and advances in power electronics.”
Semikron Danfoss and Vincotech are now set to take MiniSKiiP’s reliability and standardization to the next level. Customers can look forward this technology bringing even greater robustness, versatility, and compatibility to their products.
Original – Semikron Danfoss
