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Alpha and Omega Semiconductor Limited (AOS) announced the AONA66916, a 100V MOSFET packaged in the company’s innovatively designed top and bottom side cooling DFN 5 x 6 package. Designers have long trusted AOS power semiconductors as essential components that help them meet a wide variety of high performance application requirements.
Now, in delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions.
Typically, when using the standard DFN 5×6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS’ new top and bottom cooling DFN 5×6 package is designed to achieve the highest heat transfer between the exposed top contact and heat sink due to its large surface contact area construction.
This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5×6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS’ standard DFN 5×6 package, eliminating the need to modify existing PCB layouts.
Another benefit of the AONA66916 is that it utilizes AOS’ 100V AlphaSGT™ technology, providing excellent FOM for balanced performance in hard switching applications. AONA66916 has a maximum RDS(on) rating of 3.4mOhms and has a 175°C junction temperature rating.
“Cooling the power MOSFET in high power design can be challenging, and AOS has successfully addressed this essential issue with our advanced top exposed package design. It not only enables better thermal transfer from its top side exposed contact to heat sink due to large exposed surface area, our new package delivers a much cooler device that contributes to a more efficient and robust final design,” said Peter H. Wilson, Marketing Sr. Director of the MOSFET product line at AOS.
Original – Alpha and Omega Semiconductor
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Texas Instruments Incorporated reported fourth quarter revenue of $4.08 billion, net income of $1.37 billion and earnings per share of $1.49. Earnings per share included a 3-cent benefit that was not in the company’s original guidance.
Regarding the company’s performance and returns to shareholders, Haviv Ilan, TI’s president and CEO, made the following comments:
- “Revenue decreased 10% sequentially and 13% from the same quarter a year ago. During the quarter we experienced increasing weakness across industrial and a sequential decline in automotive.
- “Our cash flow from operations of $6.4 billion for the trailing 12 months again underscored the strength of our business model, the quality of our product portfolio and the benefit of 300mm production. Free cash flow for the same period was $1.3 billion.
- “Over the past 12 months we invested $3.7 billion in R&D and SG&A, invested $5.1 billion in capital expenditures and returned $4.9 billion to owners.
- “TI’s first quarter outlook is for revenue in the range of $3.45 billion to $3.75 billion and earnings per share between $0.96 and $1.16. We now expect our 2024 effective tax rate to be about 13%.”
Original – Texas Instruments
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Qorvo® unveiled an automotive-qualified silicon carbide (SiC) field effect transistor (FET) offering an industry-best 9mΩ RDS(on) in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60mΩ, making them well suited for electric vehicle (EV) applications, including on-board chargers, DC/DC converters and positive temperature coefficient (PTC) heater modules.
The UJ4SC075009B7S features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and reduces customer manufacturing costs. This new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.
Ramanan Natarajan, director of Product Line Marketing for Qorvo’s Power Products, said, “The launch of this new family of SiC FETs demonstrates our commitment to providing EV powertrain designers the most advanced and efficient solutions for their unique automotive power challenges.”
These fourth generation SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. Efficiency in SiC FETs is dependent on conduction losses, and Qorvo’s cascode/JFET approach enables reduced conduction losses through industry-best RDS(on) and body diode reverse voltage drop.
The key features of the UJ4SC075009B7S include:
- Threshold voltage VG(th): 4.5V (typical) allowing 0 to 15V drive
- Low body diode VFSD: 1.1V
- Maximum operating temperature: 175°C
- Excellent reverse recovery: Qrr = 338 nC
- Low gate charge: QG = 75 nC
- Automotive Electronics Council (AEC) Q101-qualified
Original – Qorvo
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MCC Semi launched the components engineered to satisfy the diverse requirements of demanding applications: eight low-profile Schottky barrier rectifiers with a common cathode configuration, low forward voltage, and countless possibilities.
A sleek and compact TO-263AC package delivers a typical height of only 1.7mm, translating to compatibility with the popular D2PAK footprint and seamless integration into existing designs.
Engineered to reduce power losses and optimize performance you can count on, these components are available in working voltage ranges from 45V to 200V and a forward current of 20A to 30A per device.
Ideal for freewheeling diodes, switch-mode power supplies, motor controls, and many other rugged applications, MCC’s selection of Schottky barrier rectifiers is a go-to solution when space is limited, but expectations are not.
Features & Benefits:
- Low forward voltage design minimizes power losses
- Low-profile TO-263AC package with a typical height of 1.7mm for space-saving performance
- Compatible with the popular D2PAK footprint for added versatility
- Wide working voltage range from 45V to 200V
- Forward current options of 20A and 30A per device
Original – Micro Commercial Components
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Mitsubishi Electric Corporation announced the coming release of six new J3-Series power semiconductor modules for various electric vehicles (xEVs), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the inverters of electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs). All six J3-Series products will be available for sample shipments from March 25.
The new power modules will be exhibited at the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024) from January 24 to 26 at Tokyo Big Sight, Japan, as well as other exhibitions in North America, Europe, China and additional locations.
As power semiconductors capable of efficiently converting electricity expand and diversify in response to decarbonization initiatives, the demand is increasing for SiC power semiconductors offering significantly reduced power loss. In the xEV sector, power semiconductor modules are used widely in power conversion devices such as inverters for xEV drive motors.
In addition to extending the cruising range of xEVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters. But due to the high safety standards set for xEVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications.
Development of these SiC products was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
Original – Mitsubishi Electric
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Infineon Technologies AG and Wolfspeed, Inc. announced the expansion and extension of their existing long-term 150mm silicon carbide wafer supply agreement, originally signed in February 2018. The extended partnership includes a multi-year capacity reservation agreement.
It contributes to Infineon’s general supply chain stability, also with regard to the growing demand for silicon carbide semiconductor products for automotive, solar and EV applications and energy storage systems.
“As the demand for silicon carbide devices continues to increase, we are following a multi-source strategy to secure access to a high-quality, global and long-term supply base of 150mm and 200mm SiC wafers. Our prolonged partnership with Wolfspeed further strengthens Infineon’s supply chain resilience for the coming years,” said Jochen Hanebeck, CEO of Infineon Technologies. “We have been working with Wolfspeed for more than 20 years to bring the promise of silicon carbide to the automotive, industrial and energy markets, and to help customers leverage this energy-efficient technology to foster decarbonization.”
The adoption of silicon carbide-based power solutions is rapidly growing across multiple markets. Silicon carbide solutions enable smaller, lighter and more cost-effective designs, converting energy more efficiently to unlock new clean energy applications. To better support these growing markets, Infineon is continuously diversifying its supplier base to secure access to high-quality silicon carbide substrates.
“Wolfspeed is the world’s leader in silicon carbide production. We are the catalyst in the industry transition to silicon carbide, providing high-quality materials to key customers like Infineon, a leading supplier in both the automotive and industrial markets, while also scaling our capacity footprint,” said Wolfspeed president and CEO Gregg Lowe. “Industry estimates indicate demand for silicon carbide devices, as well as the supporting material, will grow substantially through 2030, representing a $20 billion annual opportunity. We are very pleased to continue our partnership with Infineon and to serve as a major supplier of silicon carbide wafers in the years ahead.”
Original – Infineon Technologies
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Bourns, Inc. announced it will exhibit its expanding portfolio of advanced high voltage application solutions at the upcoming APEC 2024 Conference. As one of the leading power conversion components suppliers worldwide, Bourns continually develops innovative technology to meet ever-increasing requirements for reliable and safe communication in a growing group of high voltage electric vehicle (EV) and other high energy storage systems.
- Single channel signal transformer with integrated common mode choke
- Only supplier with transformer rated at 1500 VDC
- Industry’s first planar signal BMS transformer
- Continued expansion of WBG evaluation partnership with Wolfspeed
- Emphasizes Bourns’ custom magnetics design capabilities
- Transformative space-saving circuit protection innovations
- Expanded line of intelligent current sensor products
- Highly-efficient silicon carbide (SiC) diode products for increasing power densities
- High power shunt resistors for accurate BMS monitoring
Original – Bourns
- Single channel signal transformer with integrated common mode choke
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MCC Semi announced the latest lineup of innovative bridge rectifiers — GBUA10M-BP, GBUA4M-BP, and GBUA6M-BP. With 1000V capacity and a low profile, these components deliver unmatched excellence in the smallest of spaces.
Fully compatible with the GBU pin layout, these rectifiers boast an outstanding 42% reduction in height, creating more room for design flexibility. Power adapters, lighting systems, and other applications with space and height constraints are ideal for power rectification with these compact powerhouses.
Available in three high-voltage options with current ratings from 4A to 10A, MCC’s new bridge rectifiers ensure the performance and reliability you need in a space-saving JC package.
Whichever option you choose, you’ll take advantage of cost and energy savings on top of uncompromising efficiency and performance.
Features & Benefits:
- High voltage capacity of 1000V
- Current ratings from 4A to 10A
- High thermal stability
- Low profile design
- Space-saving construction
- Cost-effective solution
- Compatible with GBU pin layout
- Compact JC package
Original – Micro Commercial Components
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STMicroelectronics has been awarded “Top Employer” of the year in Italy for the third consecutive time. This award is the official recognition to companies excellent in HR policies and strategies and in their implementation to contribute to the well-being of emplyees, and improve the working environment.
In Italy STMicroelectronics has 13 sites with more than 12,500 employees, more than 3,400 in R&D.
On top of that, STMicroelectronics has been named “Top Employer” in France for the fourth time in a row.
Every year, the Top Employers Institute program certifies companies according to their participation and their results in the “HR Best Practices Survey”. This survey covers 6 major HR areas divided into 20 themes such as talent management strategy, the work environment, talent acquisition, training and skills development, well-being at work, or diversity and inclusion.
This year, the program has certified more than 2,300 companies worldwide present in 121 countries, with more than 12 million employees impacted. STMicroelectronics is one of the 110 companies that have received the certification in France.
Original – STMicroelectronics and STMicroelectronics
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Transphorm, Inc. announced availability of two new SuperGaN® devices in a 4-lead TO-247 package (TO-247-4L). The new TP65H035G4YS and TP65H050G4YS FETs offer a 35 mOhm and 50 mOhm on resistance respectively, complete with a kelvin-source terminal that gives customers versatile switching capabilities with even lower energy losses.
The new products will run on Transphorm’s well-established GaN-on-Silicon substrate manufacturing process that is cost-effective, reliable, and well-suited for high volume manufacturing on silicon production lines. The 50 mOhm TP65H050G4YS FET is currently available while the 35mOhm TP65H035G4YS FET is sampling and slated for release in calendar Q1’2024.
Transphorm’s 4-lead SuperGaN devices can serve as an original design-in option or as a drop-in replacement for 4-lead silicon and SiC solutions supporting power supplies at 1 kilowatt and up in a wide range of data center, renewables, and broad industrial applications. As noted, the 4-lead configuration offers flexibility to users for further improved switching performance.
In a hard-switched synchronous boost converter, the 35 mOhm SuperGaN 4-lead FET reduced losses by 15 percent at 50 kilohertz (kHz) and by 27 percent at 100 kHz when compared to a SiC MOSFET device with a comparable on resistance.
Transphorm’s SuperGaN FETs are known for delivering differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry required around the device.
- Easier drivability as FETs can pair with well-known, off-the shelf drivers common to silicon devices.
The TO-247-4L devices offer the same robustness, designability, and drivability with the following core specifications:
Part Number Vds (V) min Rds(on) (mΩ) typ Vth (V) typ Id (25°C) (A) max Package Variation TP65H035G4YS 650 35 3.6 46.5 Source TP65H050G4YS 650 50 4 35 Source “We continue to expand our product portfolio to bring to market GaN FETs that help customers leverage our SuperGaN platform performance advantages in whatever design requirement they may have,” said Philip Zuk, Senior Vice President, Business Development and Marketing, Transphorm.
“The four-lead TO-247 package provides flexibility for designers and customers seeking even greater power system loss reductions with little to no design modifications on silicon or silicon carbide systems. It’s an important addition to our product line as we ramp into higher power applications.”
Original – Transphorm
