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Manufacturers of cutting-edge audio equipment constantly seek to enhance sound quality while also meeting the growing demand for compact, lightweight, more integrated, and energy-efficient designs. At the same time, they must ensure seamless connectivity, cost-effectiveness, and user-friendly functionality, making audio product development more complex than ever.
To overcome these challenges, SounDigital has integrated CoolGaN™ transistors from Infineon Technologies AG into its new 1500 W Class D amplifier, featuring an 800 kHz switching frequency and five channels. Infineon’s advanced GaN technology has improved the energy efficiency of the amplifier by five percent and reduced energy loss by 60 percent.
“We are excited to enhance the performance of our audio amplifiers using Infineon’s GaN power semiconductors, enabling us to inspire people and provide entertainment by amplifying music around the world,” said Juliano Anflor, CEO of SounDigital. “GaN transistors significantly enhances our overall system performance with minimized system cost and increased ease of use.”
“GaN technology is transforming the audio amplifier industry, providing unparalleled efficiency and performance,” said Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “Infineon’s leading GaN solutions deliver superior sound quality, higher power density, and reduced energy consumption, enabling SounDigital’s audio systems to reach new levels of fidelity and performance.”
For its 1500 W Class D amplifier, SounDigital selected Infineon’s 100 V normally-off E-mode transistors: IGC033S101 in a PQFN-3×5 package and IGB110S101 in a PQFN-3×3 package. With their low on-resistance, the transistors are ideal for demanding high-current applications, enabling significant improvements in both sound quality and efficiency of SounDigital’s amplifier.
The GaN-based amplifier also delivers high performance while reducing power dissipation by 75 W, allowing for a 50 percent smaller heat sink. Additionally, the overall system size has been reduced by 40 percent without compromising performance. The audio quality has been further improved by the CoolGaN transistors, with total harmonic distortion (THD) reduced by 70 percent, enabling a more precise and detailed sound experience. At the same time, the idle current has been reduced by 40 percent, significantly improving energy efficiency.
Original – Infineon Technologies
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Navitas Semiconductor has announced it will attend APEC 2025 and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data center EV, and mobile applications. Additionally, Navitas will highlight its latest ‘paradigm in power conversion’, unveiled in a live-streamed press event on the 12th of March.
APEC takes place at Atlanta’s Georgia World Congress Center from March 16th to 20th. The company’s “Planet Navitas” stand (Booth #1107) will showcase the company’s mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy GaN and SiC power semiconductors. These technologies are designed for high-growth markets that demand the highest efficiency and power density. The shift from silicon to GaN and SiC technologies has the potential to save over 6,000 megatons of CO2 per year by 2050. Recent Navitas breakthroughs that will be highlighted on the stand include:
- Navitas’ breakthrough that will create a paradigm shift in power conversion – full details will be unveiled in a live-streamed press event on the 12th of March.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
- Mid-voltage GaNFast FETs targeting 48V AI data center power supplies, next-generation EV platforms EV and AI-based robotics, to enable high-frequency, high-efficiency, and high-power density power conversion systems.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- SiCPAK™ High-Power Modules – Built for Endurance and Performance: Utilizing industry-leading ‘trench-assisted planar’-gate technology and epoxy-resin potting for increased power cycling and long-lasting reliability, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems (ESS).
- New Advancements in our Leading GaNFast & GeneSiC technology:
- GeneSiC MOSFETs specifically optimized for EV traction modules with additional screening and gold metallization for sintering.
- GaNSense™ motor drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhancing performance and robustness beyond what is achievable by any discrete GaN or discrete silicon device.
Navitas will participate and present in the Industry Session which showcases the latest work in all areas of power electronics.
Technical Presentations:
Wednesday 19th March
- ‘GaNSlim Power IC & DPAK-4L Package Enables 100W, 100cc, PD3.1 Continuous Power Solution with 95% Efficiency’
- 2:20 pm, IS14.3, A411, Tom Ribarich, Sr Dir. Strategic Marketing
- ‘500kHz Inverter Design Using Bidirectional GaN Switches’
- 8:30 am, IS11.1, A403, Jason Zhang, VP Applications & Technical Marketing
- ‘Advancing Power Solutions: Integrating Wide Bandgap Technologies for Next-Generation Applications’
- 1:30 pm – 4:55 pm ET, IS14, Llew Vaughan-Edmunds, Session Chair.
- ‘WBG Converter Design’
- 8:30 am – 11:55 am ET, IS11.1, Jason Zhang, Session Chair.
Thursday 20th March
- ‘Marketing & Technology Trends in Power Electronics’
- 10:10 AM – 11:50 AM ET, Stephen Oliver, Session Chair.
Original – Navitas Semiconductor
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Texas Instruments (TI) announced a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers. This family of gate drivers includes the industry’s first space-grade GaN FET driver that supports up to 200V operation.
The devices are available in pin-to-pin compatible ceramic and plastic packaging options and support three voltage levels. TI’s advancements in space-grade power products enable engineers to design satellite power systems for all types of space missions using just one chip supplier.
Satellite systems are growing increasingly complex to meet the demand for more on-orbit processing and data transmission, higher-resolution imaging, and more precise sensing. To improve mission capabilities, engineers strive to maximize electrical power system efficiency. TI’s new gate drivers are designed to accurately drive GaN FETs with fast rise and fall times, improving power-supply size and density. This allows a satellite to more effectively use the power generated by its solar cells to perform mission functions.
“Satellites perform critical missions, from providing global internet coverage to monitoring climate and shipping activity, enabling humans to better understand and navigate the world,” said Javier Valle, product line manager, Space Power Products at TI. “Our new portfolio enables satellites in low, medium and geosynchronous earth orbits to operate in the harsh environment of space for an extended period of time, all while maintaining high levels of power efficiency.”
For more information, read the technical article, “How you can optimize SWaP for next-generation satellites with electronic power systems.”
Optimizing size, weight and power (SWaP) using GaN technology can:
- Improve electrical system performance.
- Extend mission lifetimes.
- Reduce satellite mass and volume.
- Minimize thermal management overload.
Designers can use the family for applications spanning the entire electrical power system.
- The 200V GaN FET gate driver is suitable for propulsion systems and input power conversion in solar panels.
- The 60V and 22V versions are intended for power distribution and conversion across the satellite.
TI’s family of space-grade GaN FET gate drivers offers different space-qualified packaging options for the three voltage levels, including:
- Radiation-hardened; Qualified Manufacturers List (QML) Class P and QML Class V in plastic and ceramic packages, respectively.
- Radiation-tolerant Space Enhanced Plastic (SEP) products.
John Dorosa, a TI systems engineer, will present “How to easily convert a hard-switched full bridge to a zero-voltage-switched full bridge” on Tuesday, March 18, 2025, at 9:20 a.m. Eastern time at the Applied Power Electronics Conference in Atlanta, Georgia. This industry session will feature TI’s TPS7H6003-SP gate driver.
Production quantities of the TPS7H6003-SP, TPS7H6013-SP, TPS7H6023-SP and TPS7H6005-SEP are available now on TI.com. Preproduction quantities of the TPS7H6015-SEP and TPS7H6025-SEP are also available, with the TPS7H6005-SP, TPS7H6015-SP and TPS7H6025-SP available for purchase by June 2025. Additionally, development resources include evaluation modules for all nine devices, as well as reference designs and simulation models.
Original – Texas Instruments
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The European Commission approved funding under the European Chips Act for the Infineon Technologies AG Smart Power Fab in Dresden. The official funding approval from the Federal Ministry for Economic Affairs and Climate Action (BMWK), which is responsible for the disbursement of EU Chips Act funding, is still pending and is expected within the next few months.
Additionally, the Smart Power Fab is already receiving support under the European Commission’s IPCEI ME/CT (“Important Project of Common European Interest on Microelectronics and Communication Technologies”) innovation program. The total funding for the Dresden site amounts to around one billion euros. Construction began in March 2023 and is progressing successfully. The Fab opening is planned for 2026.
“This government-supported investment by Infineon strengthens the position of Dresden, Germany and Europe as a semiconductor hub and promotes a state-of-the-art innovation and production ecosystem for microelectronics,” says Jochen Hanebeck, CEO of Infineon. “We are increasing semiconductor capacity in Europe and thus helping secure stable supply chains in automotive, security and industrial fields.”
Infineon is investing a total of five billion euros in the expansion of its Dresden site. The German federal government previously approved the early start of the project. The new development will create up to 1,000 new jobs, not including the additional jobs created in the ecosystem of the investment. Experts assume a positive job effect of 1:6. The core of the Smart Power Fab will focus on technologies that further accelerate decarbonization and digitalization for example by driving energy-efficient power solutions for Artificial Intelligence.
In addition to the funding for the expansion of manufacturing in Dresden, Infineon is also leveraging the IPCEI ME/CT innovation program to drive investments in research and development at other corporate locations. Between 2022 and 2027 Infineon will have invested 2.3 billion euros in innovation projects at its sites in Germany and Austria, concentrated in the fields of power electronics, analog/mixed-signal technologies, sensor technologies and radio frequency applications.
As part of the EU funding programs, Infineon is furthermore planning comprehensive measures to promote partnership between science and industry. A central element is close collaboration with European universities, research institutions and start-ups. Infineon offers talented young individuals a platform for developing and advancing sustainable innovations. These activities promote the hands-on application of scientific knowledge and strengthen Europe’s position as an innovation hub.
Original – Infineon Technologies
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SemiQ Inc has announced a family of three 1200V SiC full-bridge modules, each integrating two of the company’s rugged high-speed switching SiC MOSFETs with reliable body diode. The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.
Available in 18, 38 and 77mΩ (RDSon) variants, the modules have been tested at voltages exceeding 1350V and deliver a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.
Operational with a junction temperature of up to 175oC, the rugged B2 modules have exceptionally low switching losses (EON 0.13mJ, EOFF 0.04mJ at 25oC – 77mΩ module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA – all modules) and low junction to case thermal resistance (0.4oC per watt – 18mΩ module).
“By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications. This family of modules simplifies system design, and enables faster time-to-market for next-generation solar, storage, and charging solutions,” said Seok Joo Jang, Director of Module Engineering at SemiQ.
Available immediately, the modules can be mounted directly to a heat sink, are housed in a 62.8 x 33.8 x 15.0mm package (including mounting plates) with press fit terminal connections and split DC negative terminals.
Original – SemiQ
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LATEST NEWSVishay Intertechnology to Showcase Cutting-Edge Semiconductor and Passive Solutions at ELECRAMA 2025
February 19, 2025
3 Min ReadVishay Intertechnology, Inc. announced that at ELECRAMA 2025, the company will be exhibiting its broad portfolio of passive and semiconductor solutions that are enabling the future of energy technology. In hall 16, booth B14, Vishay will be showcasing its differentiated products and solutions in a series of demonstrations across a variety of markets, including automotive, transmission and distribution, industrial, renewable energy, and locomotive.
Among the demonstrations and components taking center stage at Vishay’s booth will be:
- A variety of Vishay ESTA power electronic capacitors (PEC) for DC-Link, snubber, and AC filtering applications, together with LVAC power capacitors, box capacitors, and detuned reactors
- A 48 V, 10 kW traction inverter for light electric vehicles
- A 3.6 kW 800 V to 48 V power converter for auxiliary DC/DC power
- A scalable 30 kW DC fast charger
- A 10 kW photovoltaic inverter with MPPT
Other Vishay passive components on display at ELECRAMA 2025 will include inrush current limiters and sensing thermistor solutions from the company’s latest acquisition: Ametherm. Highlighted capacitors will consist of tantalum polymer, metallized polypropylene DC-Link, interference suppression, and ceramic disc safety devices, in addition to EDLC supercapacitors.
Featured resistors will include water cooled, vitreous, and axial cemented leaded wirewound devices; Power Metal Strip® battery shunts; high power and high voltage thick film chip resistors; thin film MELF and thick film power devices; hybrid wirewound resistors for EV applications; custom magnetics; IHLE® high current inductors with e-field shields; and IHPT™ haptic feedback actuators with Immersion licenses.
Highlighted Vishay semiconductor solutions will consist of industrial-grade 650 V and 1200 V Gen 3 silicon carbide (SiC) Schottky diodes and diode modules, 600 V and 1200 V Gen 5 FRED Pt® rectifiers and 1200 V Gen 7 FRED Pt® Hyperfast rectifiers, and also 600 W unidirectional TVS in the DFN3820 package. Optoelectronic solutions on display will include widebody high speed optocouplers and optocouplers with phototransistor output and Schmitt-Trigger functionality; 1 Form A solid-state relays; high reliability, reinforced isolated amplifiers; and ambient light sensors with I²C interfaces.
Vishay will be highlighting 6 A, 8 A, and 60 A eFuses — in addition to an integrated OR-ing switch featuring current sensing — as well as a 50 A VRPower® integrated power stage and 60 A to 100 A smart power stages in MLP packages. The company will also be showcasing its 1200 V MaxSiC SiC MOSFETs, in addition to MOSFETs in the PowerPAK® 10 x 12 and 8 x 8LR packages, and dual PowerPAIR® 6 x 5FS and 3 x 3FS packages.
ELECRAMA 2025 will be taking place February 22-26 in Greater Noida, India. More information on the event is available at https://elecrama.com/.
Original – Vishay Intertechnology
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Analog Devices, Inc. announced financial results for its fiscal first quarter 2025, which ended February 1, 2025.
- Revenue of more than $2.4 billion, with sequential growth in Industrial, Automotive, and Communications, and double-digit year-over-year growth in Consumer
- Operating cash flow of $3.8 billion and free cash flow of $3.2 billion on a trailing twelve-month basis
- Raised quarterly dividend 8% to $0.99, marking twenty-one consecutive years of increases
- Increased share repurchase authorization by $10.0 billion, bringing total remaining authorization to approximately $11.5 billion
“ADI delivered first quarter revenue, profitability, and earnings per share above the midpoint of our outlook, despite the challenging macro and geopolitical backdrop,” said Vincent Roche, CEO and Chair. “Our recovery is being propelled by improving cyclical dynamics and numerous new wins across our franchise converting to revenue. We remain firmly committed to delivering ever higher levels of value for customers through differentiated innovation and customer experience, coupled with an agile and resilient supply chain.”
“Bookings continued to show gradual improvement during the first quarter with strength in Industrial and Automotive positioning us to grow sequentially and year-over-year in our second fiscal quarter. We remain confident that fiscal 2025 represents a return to growth for ADI,” said Richard Puccio, CFO.
Performance for the First Quarter of Fiscal 2025 (PDF)
Outlook for the Second Quarter of Fiscal Year 2025
For the second quarter of fiscal 2025, Analog Devices is forecasting revenue of $2.50 billion, +/- $100 million. At the midpoint of this revenue outlook, reported operating margin of is expected to be approximately 24.2%, +/-160 bps, and adjusted operating margin of approximately 40.5%, +/-100 bps. Reported EPS is planned to be $0.97, +/-$0.10, and adjusted EPS to be $1.68, +/-$0.10.
The second quarter fiscal 2025 outlook is based on current expectations and actual results may differ materially as a result of, among other things, the important factors discussed at the end of this release. The statements about the second quarter fiscal 2025 outlook supersede all prior statements regarding our business outlook set forth in prior ADI news releases, and ADI disclaims any obligation to update these forward-looking statements.
The adjusted results and adjusted anticipated results above are financial measures presented on a non-GAAP basis. Reconciliations of these non-GAAP financial measures to their most directly comparable GAAP financial measures are provided in the financial tables included in this release. See also the “Non-GAAP Financial Information” section for additional information.
Dividend Payment
The ADI Board of Directors has declared a quarterly cash dividend of $0.99 per outstanding share of common stock. The dividend will be paid on March 17, 2025 to all shareholders of record at the close of business on March 4, 2025.
Original – Analog Devices
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Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN™ G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1).
“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling and faster-time-to-market,” said, Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
The CoolGaN G3 100 V Transistor devices will be available in a 5×6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high performance transistor output in a familiar footprint.
Moreover, this chip and package combination allows for high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.
Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.
Original – Infineon Technologies
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Cambridge GaN Devices (CGD) has successfully closed a $32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.
Transforming Power Electronics with GaN
Gallium nitride-based devices represent a breakthrough in power electronics, offering faster switching speeds, lower energy consumption, and more compact designs than traditional silicon-based solutions. CGD’s proprietary monolithic ICeGaN® technology, which simplifies the implementation of GaN into existing and progressive designs, delivers efficiency levels exceeding 99%, enabling energy savings of up to 50% in a wide range of high-power applications including electric vehicles and data centre power supplies. These innovations have the potential to save millions of tons of CO2 emissions annually, accelerating the global transition to more sustainable energy systems due to the inherent ease-of-use that ICeGaN® technology provides to its customers.Dr. Giorgia Longobardi, CEO and Founder of CGD, said: “This funding round marks a pivotal moment for CGD. It validates our technology and vision to revolutionize the power electronics industry with our efficient GaN solutions and make sustainable power electronics possible. We’re now poised to accelerate our growth and make a significant impact in reducing energy consumption across multiple sectors. We look forward to collaborating with our strategic investor to penetrate the automotive market”.
Market Opportunity and Proven Success
The global GaN power device market is projected to grow at a remarkable CAGR of 41%, reaching $2 billion by 20291. At the same time, ICeGaN® is being seen as a viable alternative to existing solutions using Silicon Carbide (SiC), combining high energy-efficiency, miniaturization, and monolithically integrated smart functionalities. This will enable Cambridge GaN Devices to have access to a high power market estimated to be in excess of $10 billion by 20291. With its cutting-edge technology and market leadership position, CGD is well positioned to capitalize on this rapid market expansion. Having successfully secured industry-leading customers in their pipeline, CGD has consistently demonstrated its ability to deliver reliable and impactful solutions, enabling innovation in the sector.Henryk Dabrowski, SVP of Sales at CGD, said: “I’m thrilled to see this funding helping to deliver on customer deals we’ve already closed for CGD’s latest-generation P2 products. This investment will significantly boost our ability to meet the growing demand for our reliable and easy-to-use GaN solutions.”
Global Expansion and Vision for the Future
With a global team of experts, decades of research, and a commitment to pushing the boundaries of GaN technology, CGD continues to deliver solutions that enhance everyday electronics. As the world advances toward electrification and sustainability, CGD’s leadership in GaN technology offers a pathway to reduce energy consumption, lower costs, and mitigate environmental impact. By enabling efficient, compact, and high-performance power devices, CGD is setting a new standard for sustainable power electronics.The funding will enable the company to expand its operations in Cambridge, North America, Taiwan and Europe, and deliver CGD’s unique value proposition to its growing customer base. This significant investment will fuel CGD’s growth strategy, focusing on the continued delivery of highly efficient GaN products to high-power industrial, data centre, and automotive markets. John Pearson, Chief Investment Officer at Parkwalk Advisors, said: “CGD is at the forefront of technology that can reduce the energy demands of booming industries, like Artificial Intelligence and Electric Mobility. It has enormous global potential and widespread applications which will see CGD continue to innovate and grow. We are proud to have backed CGD since 2019 and are excited to be working with an exceptional team and cohort of other investors to accelerate its global expansion.”
George Mills, Director – Deeptech, Direct & Co-Investments, British Patient Capital, said: “Following years of research, Cambridge GaN Devices have proven the impact of their semiconductor technology. Their GaN devices consume less energy than their silicon-based counterparts, which both reduces costs and has a positive environmental impact. It’s valuable technology that now needs long-term capital to scale.”
Original – Cambridge GaN Devices
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In its FY2024 third-quarter consolidated business results, Toshiba Corporation reported a significant turnaround, achieving an operating income of ¥114.3 billion, the highest for the first three quarters since FY2018, when the memory business was excluded from its portfolio. This marks a substantial improvement from the previous year, driven by increased net sales and effective management reforms.
Financial Performance Overview
For the first nine months of FY2024, Toshiba’s net sales experienced a year-over-year (YoY) increase. Despite a sluggish recovery in the semiconductor market leading to decreased sales in that segment, other areas such as Hard Disk Drives (HDDs) and Power Generation Systems performed well. The Building Solutions segment also saw improved operating income due to profitability-focused reforms. These positive outcomes contributed to the overall increase in operating income across all segments.
A notable factor in this financial upturn was the reduction in provisions by ¥50.9 billion YoY, achieved through enhanced risk analysis and management efforts. Net income reached ¥184.8 billion, a significant rise of ¥291.8 billion YoY, bolstered by increased equity earnings from affiliates, particularly due to Kioxia Holdings Corporation’s improved performance.
Segment-Specific Insights
- Semiconductors and Storage: The semiconductor segment faced challenges with decreased sales attributed to a slow market recovery. However, the HDD sector experienced higher sales, contributing positively to the company’s operating income.
- Energy Systems & Solutions: This segment saw an increase in orders, particularly for large-scale projects, leading to a higher order backlog. The positive trend indicates robust demand and a strong market position in energy solutions.
- Infrastructure Systems & Solutions: The segment reported increased orders and a growing order backlog, reflecting successful acquisition of large-scale projects and a solid market presence.
- Building Solutions: Focused reforms aimed at enhancing profitability led to improved operating income in this segment, particularly in the elevator business in Japan.
Strategic Initiatives and Management Reforms
Toshiba’s financial resurgence can be attributed to several strategic initiatives and management reforms:
- Enhanced Risk Management: The company implemented a comprehensive risk analysis framework, resulting in a significant reduction in provisions and contributing to improved financial stability.
- Cost Optimization: Efforts to reduce fixed costs and conduct regular sales price reviews have been instrumental in enhancing profitability across various business segments.
- Focus on Core Competencies: By concentrating resources on high-performing sectors such as energy systems and infrastructure solutions, Toshiba has strengthened its market position and financial performance.
Looking ahead, Toshiba aims to build on its current momentum by continuing to implement management reforms and strategic initiatives. The company is poised to capitalize on growth opportunities in its core business areas while maintaining a strong focus on risk management and operational efficiency.
Toshiba Corporation’s third-quarter results for FY2024 reflect a robust financial recovery, driven by strategic reforms, effective risk management, and a focus on core business strengths. The company’s proactive approach positions it well for sustained growth and profitability in the coming years.
Original – Toshiba
