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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / TOP STORIES / WBGMazda and ROHM Collaborate to Develop Automotive Components Utilizing Next-Generation Semiconductors
March 28, 2025
3 Min ReadMazda Motor Corporation and ROHM Co., Ltd. have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors, which are expected to be the next-generation semiconductors.
Since 2022, Mazda and ROHM have been advancing the joint development of inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles.
GaN is attracting attention as a next-generation material for power semiconductors. Compared to conventional silicon (Si) power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturization of components through high-frequency operation.
Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in weight reduction and design. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.
“As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its outstanding semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars. Through collaboration with partners who share our vision, Mazda will continue to deliver products filled with the ‘joy of driving’ that allows customers to truly enjoy driving, even in electric vehicles.”
“We are very pleased to collaborate with Mazda, which pursues the ‘joy of driving,’ in the development of automotive components for electric vehicles” said Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM. “ROHM’s EcoGaN™, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving. To implement this in society, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN. By collaborating with Mazda, which aims to create ‘cars that coexist sustainably with the earth and society,’ we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors and the creation of a sustainable mobility society.”
Original – ROHM
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Wolfspeed, Inc. announced the appointment of Robert Feurle as Chief Executive Officer (CEO), effective May 1, 2025, following a comprehensive internal and external search by the Board of Directors. Feurle succeeds Thomas Werner, who is serving as interim Executive Chairman and will return as Chairman of the Board following the transition.
Feurle brings more than 20 years leading global organizations that develop the most advanced power semiconductor solutions in automotive and other high voltage applications, including both silicon and silicon carbide. A citizen of both the United States and Germany, Feurle will be returning to the United States where he previously spent a decade in executive roles at Micron Technology and will be relocating to the Company’s headquarters in Durham, North Carolina, where he will work closely with Werner to ensure a smooth transition.
Most recently, he served as Executive Vice President and General Manager of the Opto Semiconductors Business Unit at ams-OSRAM AG, where he was responsible for managing more than 10,000 employees in sites and factories around the world. There, he expanded market share and accelerated the introduction of cutting-edge LED and Laser products into automotive and new advanced LED applications. Previously, at Infineon Technologies, Micron Technology, Qimonda, and Siemens, Feurle successfully managed strategic initiatives that enhanced competitiveness and increased revenue growth in challenging global markets.
“We are excited to welcome Robert to Wolfspeed to lead the Company into its next chapter. With a history of delivering significant operational enhancements and profitability improvements, and deep industry expertise, we are confident that Robert is the right individual to take the helm during this stage in the Company’s lifecycle. His history of driving success and operational excellence in each of his previous roles is a significant contributor to our decision to appoint him as CEO. The Board and I look forward to working closely with Robert to successfully navigate near-term market dynamics and ultimately position the Company for long-term value creation,” said Thomas Werner, Executive Chairman.
“I am grateful for the opportunity to lead Wolfspeed during such a transformative period. During my tenure at Infineon, I became intimately familiar with the silicon carbide industry and saw firsthand Wolfspeed’s impressive leadership in the space. I believe we have just begun to scratch the surface of the vast potential of silicon carbide. Wolfspeed’s world-class facilities, exceptional talent, and robust intellectual property, position us to maintain and expand our market leadership,” said Feurle.
Throughout his career, Feurle has consistently driven successful growth strategies, innovative product development, and market expansion initiatives. At ams-OSRAM, Feurle significantly enhanced the market presence of the Opto Semiconductors division through accelerated innovation in advanced compound semiconductor solutions.
Previously at Infineon Technologies, he strategically expanded market opportunities by spearheading new product introductions in the field of IGBT and silicon carbide technologies and leading a global business unit focused on competitive differentiation and profitable growth. He was also part of the team at Infineon supporting the proposed acquisition of the Wolfspeed operations in 2016. His deep experience in market-driven technology innovation and strategic business scaling makes him uniquely suited to advance Wolfspeed’s global leadership in silicon carbide technology.
Feurle joins the company as it continues to focus on improving financial performance and accelerating its path to generate positive free cash flow, take aggressive steps to strengthen its balance sheet and raise cost-effective capital required to support its long-term growth plan.
“With all of the Company’s competitive advantages I feel very confident that we will be able to work through this transformative period to refresh the operating plan, improve financial performance and accelerate our path to positive free cash flow.” Feurle continued, “I look forward to working closely with the Board and our talented team to deliver exceptional value to all of our stakeholders.”
Robert Feurle is a semiconductor industry veteran, bringing more than 20 years of experience in driving operational excellence and financial strength. Prior to his appointment as Wolfspeed’s CEO, Feurle’s recent experience includes serving as Executive Vice President of the Opto Semiconductor business unit at ams-OSRAM AG and Vice President and General Manager of Integrated Solutions and Discretes at Infineon Technologies AG. He also held various leadership and operational roles at Micron Technology, Inc., Qimonda AG and Siemens AG.
Feurle holds a degree in Electrical Engineering from the University of Applied Sciences in Konstanz, Germany.
Original – Wolfspeed
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Vishay Intertechnology, Inc. introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 %, while offering a 65.4 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required to power the latest high tech equipment. With the SiHK050N65E and other devices in the Gen 4.5 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC/DC converter blocks.
Typical applications will include servers, edge computing, and super computers; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHK050N65E’s low typical on-resistance of 0.048 Ω at 10 V results in a higher power rating for applications > 6 kW. With 50 V of additional breakdown voltage, the 650 V device addresses 200 VAC to 277 VAC input voltages and the Open Compute Project’s Open Rack V3 (ORV3) standards. In addition, the MOSFET offers ultra low gate charge down to 78 nC. The resulting FOM of 3.74 Ω*nC translates into reduced conduction and switching losses to save energy and increase efficiency. This allows the device to address the specific titanium efficiency requirements in server power supplies or reach 96 % peak efficiency.
For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 8.0 Ω*pF. The SiHK050N65E is offered in the PowerPAK® 10 x 12 package with a Kelvin connection for reduced gate noise and provides increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Original – Vishay Intertechnology
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Kulicke and Soffa Industries, Inc. announced the launch of Asterion-PW, extending its leadership in power device applications with a fast and precise ultrasonic pin welding solution. This advanced solution sets a new standard for pin interconnect capability – redefining efficiency, precision, and reliability.
Power module devices currently deployed in renewable energy, automotive, and railroad applications are increasingly reliant on pin-based interconnects for critical power storage, management and delivery requirements. The Power module market is one of the fastest growing semiconductor markets – anticipated to support a 12% compound annual growth rate through 2029.
The Asterion-PW leverages market leading ultrasonic technology which is replacing traditional soldering in crucial applications due to accuracy and productivity improvements. Additionally, due to the elimination of flux and solder paste, the Sonotrode ultrasonic capability provides clear environmental benefits. The Asterion-PW platform also provides unparalleled speed and precision enabling higher throughput and superior quality:
- Unmatched Speed and Precision: With a high-resolution linear motor positioning system and innovative, patent-pending Sonotrode design, the Asterion®-PW achieves fine precision Pin placement repeatability.
- Enhanced Productivity: An integrated high speed bulk pin feeder system and optional material handling system equipped with an advanced cleaning station ensure smooth operation. The cleaning system effectively removes contaminants before encapsulation, improving product quality.
- Superior Cost of Ownership: The durable Sonotrode boasts one of the longest operational lifespans currently known in the industry, delivering less frequent change overs, outstanding reliability and cost efficiency.
“Precision drives innovation, and innovation transforms possibilities into realities. The Asterion®-PW for Power module applications is where innovative technology meets performance and cost of ownership benefits, redefining the future of manufacturing,” said Chan Pin Chong, Kulicke & Soffa’s Executive Vice President and General Manager of Products and Solutions.
Original – Kulicke and Soffa Industries
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Thermo Fisher Scientific Inc., the world leader in serving science, announced the launch of the Thermo Scientific Vulcan™ Automated Lab, a groundbreaking solution designed to drive a new era of process development and control in semiconductor manufacturing. The seamlessly integrated system is designed to enhance productivity, increase yield and reduce operating costs for semiconductor manufacturers.
The rapid evolution and miniaturization of semiconductor technology is leading to unprecedented demand for atomic-scale transmission electron microscopy (TEM) metrology data. Manufacturers now face the challenge of scaling laboratory operations quickly, while maintaining high efficiency and productivity to meet the growing global need for semiconductors that power everything from consumer electronics to autonomous vehicles.
“The increasing complexity of digital technologies, which requires more sophisticated semiconductors, provides us with an incredible opportunity to enable the success of our semiconductor customers through advanced imaging analysis technology,” said Marc N. Casper, chairman, president and chief executive officer of Thermo Fisher. “By leveraging our deep expertise in electron microscopy and auxiliary instruments with artificial intelligence capabilities, our new solution is well-positioned to help semiconductor manufacturers drive efficiencies in their operations.”
Drawing on decades of electron microscopy (EM) innovation, the Thermo Scientific Vulcan Automated Lab represents a step change in atomic-scale data acquisition by integrating robotic handling with artificial intelligence-enhanced instruments for semiconductor analysis. This enables consistent and efficient standards for TEM metrology workflows, while delivering high-volume data of exceptional quality and reducing operator burden.
The solution has also been designed to help address the time-to-data gap resulting from traditional TEM analysis methods. By streamlining metrology data collection using a combination of materials handling automation and data connectivity, the Thermo Scientific Vulcan Automated Lab accelerates the data collection process and creates an integrated workflow between the semiconductor lab and the fabrication facility.
Original – Thermo Fisher Scientific
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CVD Equipment Corporation announced its financial results for the fourth quarter and fiscal year ended December 31, 2024.
Manny Lakios, President and CEO of CVD Equipment Corporation, commented, “CVD’s fourth quarter 2024 revenue was $7.4 million, representing an 80.3% increase from the prior year quarter. Our backlog at December 31, 2024 was $19.4 million, meaningfully higher than our 2023 year-end backlog of $18.4 million.“
“During 2024 we continue to see an ongoing recovery of our aerospace and defense market. As previously announced, in early November we received a $3.5 million follow on order for our CVI 3500™ system from an existing aerospace customer.”
“The silicon carbide market has remained challenging due to overcapacity and the global decline in wafer prices,” continued Mr. Lakios. “The customer for our first PVT200™ system, which shipped in the second half of 2024, is continuing to evaluate the performance of our system for possible additional orders. We continue to support our installed base of PVT150™ systems and pursue additional PVT150™ and PVT200™ orders.”
Mr. Lakios added, “While the fourth quarter represents the second consecutive quarter of positive net income, we expect our order and revenue levels to continue to fluctuate given the nature of the emerging growth markets we serve. In addition, the current geopolitical environment, including the possible imposition of tariffs that may affect our supply chain and costs of components and materials, presents us with new challenges in fiscal 2025 and beyond. We are staying the course on our strategic efforts to build critical customer relationships, while carefully managing our expenses in order to achieve our goal of long-term profitability and positive cash flow, while simultaneously focusing on growth and return on investment.”
Fourth Quarter 2024 Financial Performance
- Revenue of $7.4 million, up $4.1 million or 80.3% year over year due to higher system revenue by our CVD Equipment segment and an increase in gas delivery system revenue by our SDC segment.
- During the quarter, we recognized an additional $0.3 million non-cash charge to reduce our PVT150™ inventory to net realizable value based on changes in the market for equipment for 150 mm SiC wafers.
- Our gross profit margin percentage improved due to changes in contract mix but was offset by the inventory charge. The prior year quarter was impacted by significant cost overruns on one contract.
- Operating income of $35,000 as compared to an operating loss of $2.5 million in the prior year fourth quarter.
- Net income of $132,000 or $0.02 basic and diluted share, compared to a net loss of $2.3 million or $0.33 per basic and diluted share during the prior year fourth quarter.
- Cash and cash equivalents of $12.6 million as of December 31, 2024, as compared to $14.0 million as of December 31, 2023.
Full Year 2024 Financial Performance
- Revenue of $26.9 million, up $2.8 million or 11.5% year over year primarily due to increases in revenues from aerospace contracts in progress and our SDC segment. Revenue for 2024 includes $0.8 million of final sales by our MesoScribe segment which closed its operations in 2024 as previously disclosed.
- Our gross profit margin percentage was 23.6% in 2024 as compared to 21.0% in the prior year due to higher revenues as well as improved margins on CVD contracts in process.
- During the fiscal year, we recognized a $1.3 million non-cash charge to reduce our PVT150™ inventory to net realizable value.
- Our gross profit margin percentage improved due to changes in contract mix but was offset by the inventory charge.
- The Company recognized total gains on the sales of equipment of $0.7 million, principally by our MesoScribe subsidiary.
- Operating loss of $2.4 million.
- Net loss of $1.9 million or $0.28 basic and diluted share, compared to a net loss of $4.2 million or $0.62 per basic and diluted share in the prior year.
Fourth Quarter 2024 Operational Performance
- Orders for the fourth quarter were $7.1 million driven by continued demand from the aerospace sector in our CVD Equipment segment and for gas delivery equipment in our SDC segment.
- One of the orders received in the fourth quarter was for a $3.5 million system order in the aerospace sector that will be delivered over the next 12 months.
Full Year 2024 Operational Performance
- Booking of new orders from customers was $28.1 million for the fiscal year, representing an increase of approximately 8.9% compared to 2023 bookings of $25.8 million. The increase in bookings of $2.3 million was related to an increase in aerospace and industrial orders.
- Backlog as of December 31, 2024, of $19.4 million, an increase from $1.0 million from the prior year end.
- Continued investments in both research and development and sales and marketing, focused on our three key strategic markets – aerospace & defense, microelectronics / power electronics and EV battery materials / energy storage.
Original – CVD Equipment
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Innoscience (Suzhou) Technology Holding Co., Ltd. announced that it achieved a decisive victory in the patent dispute initiated by Efficient Power Conversion Corporation (“EPC”), by securing a final decision from the U.S. Patent and Trademark Office (“USPTO”) invalidating the claims of the only patent remaining in the dispute launched by EPC in the US International Trade Commission (“ITC”).
On March 18, 2025, the USPTO issued the final decision finding all challenged claims of EPC’s U.S. Patent No.8,350,294 (“the ’294 patent”) are invalid and should be cancelled. This decision removes the entire foundation of EPC’s false patent infringement claim against Innoscience and marks that Innoscience has achieved a complete victory in the two-year long meritless patent war launched by EPC.
In May 2023, EPC launched a lawsuit against Innoscience at the ITC alleging infringement of EPC’s ’294 patent and three other EPC patents. During the litigation, EPC withdrew two of the four patents, and a third patent was found by the ITC to not be infringed. The ITC, however, determined that partial asserted claims of the ’294 patent are valid and infringed.
Innoscience disagrees with the ITC’s ruling on the validity and infringement of the ’294 patent and has appealed it to the U.S. Court of Appeals for the Federal Circuit on January 31, 2025. Innoscience believes that the ITC made errors in its ruling of the ’294 patent and thus should be overturned.
The latest final decision by the USPTO shows that the ITC’s determination of the ’294 patent is flawed. It is a vindication that EPC’s allegations against Innoscience are completely baseless. In its final decision, the USPTO agreed that all the asserted claims of the ’294 patent are invalid because they merely pertain to old gallium nitride (“GaN”) technology that had existed in the prior art for a long time before the patents were filed.
With this final win at the USPTO, Innoscience has knocked out the only remaining patent in the ITC case and proved that EPC’s allegations are completely unfounded. Innoscience is ready to dust off the discord fabricated by EPC and focus its effort on developing and providing top-notch GaN-based power solutions for its customers worldwide.
Original – Innoscience Technology
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GaN / LATEST NEWS / PRODUCT & TECHNOLOGY / WBGNexperia Expands GaN FET Portfolio to Cover Wider Power Ranges in Low- and High-Voltage Applications
2 Min ReadNexperia announced the addition of 12 new devices to its continuously expanding e-mode GaN FET portfolio. This latest release is intended to address the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode GaN FETs address multiple markets including consumer, industrial, server/computing and telecommunications, with a particular focus on supporting high-voltage, low to mid-power and low-voltage, low to high-power use cases.
Since introducing e-mode GaN FETs in 2023, Nexperia remains the only supplier in the industry to offer both cascode or d-mode and e-mode devices, providing designers with convenience when faced with variable challenges during the design process.
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage applications including battery management systems (BMS) in mobile devices, and laptop computers.
Also featuring in this release are 100 V and 150 V devices (RDSon<7 mΩ) suitable for synchronous rectification (SR) power supplies in consumer devices, DC-DC converters in datacomms and telecoms equipment, photovoltaic micro-inverters, Class-D audio amplifiers and motor control systems in e-bikes, forklifts and light electric vehicles (LEVs). The new higher voltage range features 700 V devices (RDSon>140 mΩ) to support LED drivers and power factor correction (PFC) applications, and 650 V devices (RDSon>350 mΩ) suitable for use in AC/DC converters.
The superior switching performance of Nexperia’s e-mode GaN FET technology is due to their exceptionally low QG and QOSS values. These new devices offer industry-leading figures of merit (FOM), making them a top choice for high-efficiency power solutions.
Original – Nexperia
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Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation.
This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. These switches are ideal for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible Power Supplies (UPS). Additionally, they are well-suited for electric vehicle charging infrastructure, including charge piles.
The X.PAK package further enhances the thermal performance of Nexperia’s SiC MOSFETs by reducing the negative impacts of heat dissipation via the PCB. Furthermore, Nexperia’s X.PAK package enables low inductance for surface mount components and supports automated board assembly.
The new X.PAK packaged devices deliver class-leading figures-of-merit (FoM) known from Nexperia SiC MOSFETs, with RDS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers concentrate on the nominal value of this parameter and neglect the fact that it can increase by more than 100% as device operating temperatures rise, resulting in significant conduction losses. Nexperia SiC MOSFETs, on the other hand, offer industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C.
“The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications,” said Katrin Feurle, Senior Director and Head of SiC Discretes & Modules at Nexperia. “This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”
The initial portfolio includes products with RDS(on) values of 30, 40, 60 mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17 mΩ will be released in April 2025. An automotive qualified SiC MOSFETs portfolio in X.PAK packaging will follow later in 2025, as well as further RDson classes like 80 mΩ.
Original – Nexperia
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Taiwan Semiconductor has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based on TSC’s proprietary PerFET device structures and processes, the new 80V/100V N-channel power MOSFETs offer a best-in-class figure of merit (FOM: RDS(on)*Q = 184) and an industry-leading 175⁰C avalanche rating. The AEC-Q-qualified devices are ideal for automotive power applications—and myriad non-automotive commercial and industrial power applications that demand efficient, reliable performance.
PerFET devices are housed in TSC-designed, industry-standard-size (5mm x 6mm) PDFN56U (single/dual) packages whose wettable flank improves solder joint reliability and AOI accuracy during PCB assembly. The PerFETs’ low on-resistance (RDS(on)) reduces conduction losses and their very low gate charge (Qg)—optimized for high-speed communication applications—offers the most efficient solution available for 48V input DC/DC converters.
Six devices comprise the new 100V PerFET series, with single-output current ratings of 50-100A and dual-outputs rated at 31A. Target applications are 48V automotive, SMPS, server and telecom, DC-DC converters, motor drives and polarity switches. The new 80V PerFET series also offers six devices. Single-output models feature current ratings of 33-110A and 31-33A for dual-output models. In addition to those targeted by the 100V series, 80V PerFETs are suitable for ideal diodes, USB-PD and type-C charger/adapters, UPS, solar inverters, LED lighting and telecommunications power applications.
“Because our PerFET power MOSFETs are built to automotive standards, design engineers can use them to achieve automotive-grade reliability in competitively priced, non-automotive applications—while eliminating proof-of-qualification paperwork necessary when using automotive parts,” said Sam Wang, vice president, TSC Products. “By adding 80- and 100-volt devices to our PerFET family, designers have even more options for increasing efficiency and reliability in their power switching applications.”
Original – Taiwan Semiconductor
