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FORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET 1200 V from Infineon Technologies AG for its next generation 800 V DCDC charging solution. Designed for on-board charger and DCDC applications in 800 V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package. The device uses top-side cooling (TSC) technology, which enables excellent thermal performance, easier assembly and lower system costs.
“We are excited to continue our partnership with FORVIA HELLA, leveraging our high-efficiency SiC products based on TSC packages,” said Robert Hermann, Vice President of Automotive High-Voltage Chips and Discretes at Infineon. “We are continuously working to take e-mobility to the next level by providing state-of-the-art SiC solutions that meet the automotive industry’s stringent requirements for performance, quality, and system cost.”
“Our customers are at the center of our efforts. That is why we have chosen Infineon’s CoolSiC Automotive MOSFET 1200 V for our next generation of DCDC converters”, said Guido Schütte, Member of the Electronics Executive Board at FORVIA HELLA. “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility.”
Infineon’s new CoolSiC Automotive MOSFET 1200 V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB.
With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
Original – Infineon Technologies
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Forge Nano, Inc. announced the completion of its new semiconductor cleanroom. The 2,000 sq ft cleanroom enables Forge Nano to manufacture multiple commercial TEPHRA™ ALD cluster tools to accommodate growing equipment demand from the semiconductor market.
Forge Nano announced the expansion of its semiconductor ALD business in 2024 with the launch of TEPHRA – its new 200mm wafer atomic layer deposition cluster tool. Forge Nano’s ability to coat single wafers at 10x the throughput of traditional ALD systems has significantly grown customer demand thus requiring an expansion of the Company’s manufacturing capacity and addition of a demonstration space.
“The Forge Nano TEPHRA can enable conformal metal barrier seed layers for through silicon (TSVs) and through glass vias (TGVs) at aspect ratios greater than 25:1 at production speeds,” said Matt Weimer, Director of R&D at Forge Nano. “We’re showcasing the capabilities of our atomic layer deposition solution for wafers, which we expect to position the company as a key enabler for advanced packaging and 3D chip integration.”
The new cleanroom provides a Class 10 (ISO 4) space for processing sensitive customer samples and includes a metrology lab for advanced thin-film measurement and particle inspection. The remainder of the cleanroom will house Forge Nano’s own internal TEPHRA tool and provide space to build multiple customer tools, serving as a dual operating space for demonstrations and manufacturing. In addition to increased manufacturing space, this expansion is poised to accelerate Forge Nano’s ability to provide proof-of-concept and commercial solution validation to manufacturers planning to integrate new ALD processes.
Powered by Forge Nano’s ALDx technology, which offers ultrathin, uniform, pinhole-free films with an unprecedented 10x throughput for single-wafer processing, TEPHRA is dedicated to the manufacturing of specialty semiconductor applications on 200mm wafers and below. With efficient chemical use, rapid cycle times, increased yield, and low-risk manufacturing, TEPHRA is the only single-wafer cluster tool with commercial throughput speeds serving 200mm applications in advanced packaging, power semiconductor, radio frequency devices (RFD), microLEDs, microelectromechanical systems (MEMS), and more.
Forge Nano expects to deliver TEPHRA tools in early 2025. Forge Nano is offering on-site TEPHRA demonstrations to new and existing customers starting in early 2025. For more details on how to participate in the upcoming demonstration, please visit: https://www.forgenano.com/semiconductors
For more information on Forge Nano’s TEPHRA product, visit the TEPHRA product page at: https://www.forgenano.com/products/tephra
Original – Forge Nano
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Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.
The devices consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.
Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.
The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
Original – Vishay Intertechnology
