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Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.
Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN™ G3 Transistor 100 V in RQFN 5×6 package (IGD015S10S1) and 80 V in RQFN 3.3×3.3 package (IGE033S08S1).
“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling and faster-time-to-market,” said, Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
The CoolGaN G3 100 V Transistor devices will be available in a 5×6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3×3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high performance transistor output in a familiar footprint.
Moreover, this chip and package combination allows for high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.
Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.
Original – Infineon Technologies
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Cambridge GaN Devices (CGD) has successfully closed a $32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.
Transforming Power Electronics with GaN
Gallium nitride-based devices represent a breakthrough in power electronics, offering faster switching speeds, lower energy consumption, and more compact designs than traditional silicon-based solutions. CGD’s proprietary monolithic ICeGaN® technology, which simplifies the implementation of GaN into existing and progressive designs, delivers efficiency levels exceeding 99%, enabling energy savings of up to 50% in a wide range of high-power applications including electric vehicles and data centre power supplies. These innovations have the potential to save millions of tons of CO2 emissions annually, accelerating the global transition to more sustainable energy systems due to the inherent ease-of-use that ICeGaN® technology provides to its customers.Dr. Giorgia Longobardi, CEO and Founder of CGD, said: “This funding round marks a pivotal moment for CGD. It validates our technology and vision to revolutionize the power electronics industry with our efficient GaN solutions and make sustainable power electronics possible. We’re now poised to accelerate our growth and make a significant impact in reducing energy consumption across multiple sectors. We look forward to collaborating with our strategic investor to penetrate the automotive market”.
Market Opportunity and Proven Success
The global GaN power device market is projected to grow at a remarkable CAGR of 41%, reaching $2 billion by 20291. At the same time, ICeGaN® is being seen as a viable alternative to existing solutions using Silicon Carbide (SiC), combining high energy-efficiency, miniaturization, and monolithically integrated smart functionalities. This will enable Cambridge GaN Devices to have access to a high power market estimated to be in excess of $10 billion by 20291. With its cutting-edge technology and market leadership position, CGD is well positioned to capitalize on this rapid market expansion. Having successfully secured industry-leading customers in their pipeline, CGD has consistently demonstrated its ability to deliver reliable and impactful solutions, enabling innovation in the sector.Henryk Dabrowski, SVP of Sales at CGD, said: “I’m thrilled to see this funding helping to deliver on customer deals we’ve already closed for CGD’s latest-generation P2 products. This investment will significantly boost our ability to meet the growing demand for our reliable and easy-to-use GaN solutions.”
Global Expansion and Vision for the Future
With a global team of experts, decades of research, and a commitment to pushing the boundaries of GaN technology, CGD continues to deliver solutions that enhance everyday electronics. As the world advances toward electrification and sustainability, CGD’s leadership in GaN technology offers a pathway to reduce energy consumption, lower costs, and mitigate environmental impact. By enabling efficient, compact, and high-performance power devices, CGD is setting a new standard for sustainable power electronics.The funding will enable the company to expand its operations in Cambridge, North America, Taiwan and Europe, and deliver CGD’s unique value proposition to its growing customer base. This significant investment will fuel CGD’s growth strategy, focusing on the continued delivery of highly efficient GaN products to high-power industrial, data centre, and automotive markets. John Pearson, Chief Investment Officer at Parkwalk Advisors, said: “CGD is at the forefront of technology that can reduce the energy demands of booming industries, like Artificial Intelligence and Electric Mobility. It has enormous global potential and widespread applications which will see CGD continue to innovate and grow. We are proud to have backed CGD since 2019 and are excited to be working with an exceptional team and cohort of other investors to accelerate its global expansion.”
George Mills, Director – Deeptech, Direct & Co-Investments, British Patient Capital, said: “Following years of research, Cambridge GaN Devices have proven the impact of their semiconductor technology. Their GaN devices consume less energy than their silicon-based counterparts, which both reduces costs and has a positive environmental impact. It’s valuable technology that now needs long-term capital to scale.”
Original – Cambridge GaN Devices
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TekSiC introduced the Xforge™ PVT, a groundbreaking high-temperature Induction Heating Furnace crafted to meet the rigorous demands of semiconductor industries and research institutes. With its state-of-the-art design and exceptional performance, the Xforge™ PVT revolutionizes PVT process development and operation. It offers versatile configurations, ensuring peak performance across diverse specialized applications.
Xforge™ PVT is a member of TekSiC’s Xforge™ platform. The journey to creating the Xforge™ began with a bold vision: to design a furnace that delivers exceptional heating capabilities while maintaining flexibility for a variety of high-temperature applications. TekSiC’s engineers faced the challenge of balancing size, power, and modularity. Through extensive research and testing, they developed a compact, highly efficient furnace that ensures consistent and precise heating for a diverse range of materials and processes.
“The Xforge™ PVT is a pivotal advancement in our company’s journey,” says Joachim Tollstoy, CEO of TekSiC. “It reflects our commitment to innovation and is designed to adapt to the specialized needs of semiconductor industries and research institutes. We built it to deliver exceptional performance with a modular design that allows for tailored solutions to meet each customer’s requirements. We are excited to use the Xforge™ PVT daily in our own SiC growth program!”
Key Features of the Xforge™
- Compact, Modular Design: The Xforge™ PVT is designed with a compact, modular architecture that allows for easy customization, enabling users to adjust the furnace’s features to suit their specific PVT application. This flexibility guarantees optimal performance and efficiency, eliminating the need for bulky, one-size-fits-all solutions.
The small footprint and excellent stack ability of the Xforge™ PVT significantly pushes the number of furnaces that can fit into your production facility. - Versatile Usage: Perfectly suited for both industrial and research applications, Xforge™ PVT, is designed for customers engaged in developing growth processes for SiC crystal with up to 200 mm in diameter. It is fully prepared for integration into large-scale SiC production.
- Advanced Process Control: The induction-heated Xforge™ PVT system is equipped with high-quality components to provide precise temperature and pressure control, ensuring outstanding stability during the SiC crystal growth process. With advanced data sensing capabilities, it supports machine learning applications through the latest communication protocols.
- Quality Tested and Field Proven: The Xforge™ PVT has undergone extensive industrial reliability testing at customer sites over several years, proving its durability in extreme high-temperature applications. It is CE-marked, ensuring compliance with strict EU health, safety, and environmental regulations.
- Built in Sweden with Precision Craftsmanship: Designed and manufactured in Linköping, Sweden—a global center for semiconductor research and silicon carbide crystal growth—the Xforge™ PVT leverages TekSiC’s decades of expertise in material science and system engineering. Each unit is crafted with meticulous care, ensuring exceptional quality and reliability.
Original – TekSiC
- Compact, Modular Design: The Xforge™ PVT is designed with a compact, modular architecture that allows for easy customization, enabling users to adjust the furnace’s features to suit their specific PVT application. This flexibility guarantees optimal performance and efficiency, eliminating the need for bulky, one-size-fits-all solutions.
