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LATEST NEWS / PRODUCT & TECHNOLOGY / PROJECTS / SiC / TOP STORIES / WBGFebruary 27, 2025
4 Min ReadSilicon carbide (SiC) provides considerable technical advantages for power electronics – however, the costs are still a drawback. In the »ThinSiCPower« research project, a consortium of Fraunhofer Institutes is developing key technologies to reduce material losses and device thickness while increasing the thermomechanical stability of the assembled SiC chips. The savings achieved are expected to help further accelerate the market development of efficient SiC power electronics.
Power electronics based on the wide-bandgap semiconductor silicon carbide (SiC) are a key enabler for energy-efficient, sustainable and high-performance applications in electromobility – from cars and commercial vehicles to trains, ships and airplanes, in the generation, transportation and storage of renewable energies, as well as for IT and industrial infrastructures. It is therefore an important and competitively relevant factor for the current global transformation processes in the areas of mobility, energy and digitalization. The market for SiC power devices is expected to grow at an annual rate of over 30 percent. Compared to conventional silicon technology, the use of SiC power electronics in a standard drive converter saves more energy than is required to manufacture the SiC power electronics themselves.
While the technological advantages of SiC are obvious due to its physical properties, the higher costs compared to the established silicon are still an obstacle to faster market penetration. Chip costs are more than three times higher than for silicon. The initially required SiC wafer is the biggest cost driver here. In the case of a SiC-based metal-oxide semiconductor field-effect transistor (MOSFET), this accounts for more than 40 percent of the manufacturing costs. In addition, due to the unfavorable mechanical material properties and large thickness of the monocrystalline SiC wafer, electronics processed from it only achieve approx. 30 percent of the thermomechanical service life compared to silicon. This disadvantage leads to an approx. 25 percent larger chip area and, in the case of an inverter for example, to around 25 percent higher costs in the application.
In the three-year ThinSiCPower project (2024-2027), funded by the Fraunhofer PREPARE program, researchers are developing an alternative way to produce cost-effective SiC substrates and significantly thinner SiC chips using more resource-efficient processing technologies. Rather than first sawing the expensive, high-quality SiC wafers with the usual material loss and later back-grinding them in device processing, the SiC crystal is separated directly into thinner wafers using a special laser process without any major loss of material, which are then bonded onto an inexpensive carrier substrate based on polycrystalline SiC.
Fraunhofer ISE, ENAS and IWM with the Fraunhofer IISB as project coordinator are pooling their individual competencies in ThinSiCPower. A SiC coating technology developed by Fraunhofer IISB is being adapted for the manufacturing of the poly-SiC carrier substrates, which is more cost- and resource-efficient than the conventional manufacturing method using chemical vapor deposition. The low-loss separation of the thin SiC wafers is carried out using a laser for defined mechanical pre-damage (Fraunhofer ISE) and subsequent separation under well-defined mechanical conditions for controlled crack propagation (Fraunhofer IWM).
The wafer bonding process for the poly-SiC substrate with the split SiC, including the necessary surface preparation before and after the bonding process, will be developed at Fraunhofer ENAS, while the subsequent device processing and qualification will take place at Fraunhofer IISB. The partners are also developing adapted electrical test methods at thin wafer level as well as physics-of-failure simulation models to maximize the market acceptance of this new class of low-cost SiC substrates. With this, a broad applicability in the relevant industries could be achieved.
The aim is to reduce SiC device costs by 25 percent by developing technology for the production of costeffective thin SiC wafers and poly-SiC substrates. In addition, SiC design costs are to be reduced by further 25 percent by increasing the load cycle stability by 300 percent. The target markets are semiconductor and power module manufacturers as well as their process and equipment suppliers through to test equipment suppliers. With this project, the participating partner institutes are also combining their expertise to set up a complete, highly innovative and future-oriented SiC processing line within the Research Fab Microelectronics Germany (FMD). The consortium is receiving consultancy support directly from partners in industry.
The ThinSiCPower project not only accelerates the market penetration of silicon carbide through the targeted cost reduction and conceptual advantages, but also serves to secure an innovative, resilient and industry relevant SiC technology value chain in Germany and Europe.
Original – Fraunhofer IISB
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ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD., an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.
Improving the efficiency of motors and power supplies, which account for most of the world’s electricity consumption, has become a significant challenge to achieving a decarbonized society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (Silicon Carbide) and GaN is expected to further enhance the efficiency of power supplies.
ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup – meeting the market demand for even smaller and more efficient high-power applications.
The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.
In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.
Liao Hongchang, Director and General Manager, ATX SEMICONDUCTOR （WEIHAI） CO., LTD.
“We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging. We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and the realization of a sustainable society.”Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM Co., Ltd.
“We are delighted to have successfully produced 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications, contributing to enrich people’s lives.”Original – ROHM
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Ideal Power Inc. published results for its fourth quarter and full year ended December 31, 2024.
“We’re thrilled with our first design win representing significant validation of B-TRAN® as an enabling technology for SSCBs and a catalyst for our anticipated revenue ramp starting in the second half of 2025. Based on the customer’s projections, the opportunity from this customer’s first B-TRAN®-based product alone could translate to revenue of several hundred thousand dollars in its first year of sales, with the opportunity to exceed a million dollars in revenue in the second year of sales. After the successful roll-out of this first product, we expect this OEM to expand its offerings to include a suite of B-TRAN®-enabled SSCBs with a wide range of ratings presenting a substantial opportunity for revenue growth,” stated Dan Brdar, President and Chief Executive Officer of Ideal Power.
Brdar continued, “We are leveraging this design win for SSCBs to potentially secure additional design wins with other large SSCB customers in the coming months to drive long-term value creation for our shareholders. Solid-state switchgear, which includes SSCBs, is at least a $1.0 billion market opportunity for us and is expected to drive our sales ramp followed by a $1.4 billion opportunity in the energy and power market. In the fourth quarter, we secured a multi-unit order for our SymCool® IQ intelligent power module. This product targets the energy and power market, a market that includes renewable energy, energy storage and EV charging.”
Key Fourth Quarter and Recent Operational Highlights
Execution to our B-TRAN® commercial roadmap continues, including:
- Secured first design win for solid-state circuit breakers (SSCB) with one of the largest circuit protection equipment manufacturers in Asia serving industrial and utility markets. The program is ahead of schedule with product design, prototype builds, testing, and delivery of the SSCBs targeted for completion in late March or early April to be followed by commercial sales later in the year.
- Secured order for our SymCool® IQ intelligent power module from a customer that specializes in the development and manufacture of circuit protection and power conversion solutions. This customer is interested in SymCool® IQ modules for several end markets including renewable energy, energy storage, electric vehicle (EV) charging, and data centers.
- Conducted a comprehensive program review in Detroit with Stellantis’ U.S. and European production and engineering teams along with other major suppliers contributing to Stellantis’ new EV platform. Based on the successful program review and positive feedback from Stellantis, we expect to not only continue advancing the drivetrain inverter program but also add a new high priority program for EV contactors.
- Secured orders from a third Global Tier 1 automotive supplier for numerous discrete B-TRAN® devices, a SymCool® power module, a SSCB evaluation board and a driver. This customer is interested in using B-TRAN® for solid-state EV contactor applications.
- Initiated third-party automotive qualification and reliability testing of B-TRAN® devices. This testing requires well over a thousand packaged B-TRAN® devices from multiple wafer runs. Test results continue to be positive with no die failures to date. Successful completion of B-TRAN® automotive qualification and reliability testing is expected later this year.
- B-TRAN® Patent Estate: Currently at 94 issued B-TRAN® patents with 45 of those issued outside of the United States and 53 pending B-TRAN® patents. Current geographic coverage includes North America, China, Taiwan, Japan, South Korea, India, and Europe.
Fourth Quarter and Full Year 2024 Financial Results
- Cash used in operating and investing activities in the fourth quarter of 2024 was $2.6 million compared to $2.1 million in the fourth quarter of 2023. Cash used in operating and investing activities in the full year 2024 was $9.2 million compared to $7.7 million in the full year 2023.
- Cash and cash equivalents totaled $15.8 million at December 31, 2024.
- No long-term debt was outstanding at December 31, 2024.
- Commercial revenue was $5,408 in the fourth quarter of 2024 and $86,032 in the full year 2024.
- Operating expenses in the fourth quarter of 2024 were $2.8 million compared to $2.5 million in the fourth quarter of 2023 driven primarily by higher research and development spending.
- Operating expenses in the full year 2024 were $11.1 million compared to $10.4 million in the full year 2023 driven primarily by higher research and development and sales and marketing spending.
- Net loss in the fourth quarter of 2024 was $2.6 million compared to $2.4 million in the fourth quarter of 2023. Net loss in the full year 2024 was $10.4 million compared to $10.0 million in the full year 2023.
2025 Milestones
For 2025, the Company has set the following milestones:
- Secure next phase of development program with Stellantis
- Complete deliverables in 1H 2025 related to first design win
- Capture additional design wins / custom development agreements
- Start initial sales ramp in second half of year
- Increase current rating of products
- Complete third-party automotive qualification testing
Original – Ideal Power
