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Taiwan Semiconductor has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based on TSC’s proprietary PerFET device structures and processes, the new 80V/100V N-channel power MOSFETs offer a best-in-class figure of merit (FOM: RDS(on)*Q = 184) and an industry-leading 175⁰C avalanche rating. The AEC-Q-qualified devices are ideal for automotive power applications—and myriad non-automotive commercial and industrial power applications that demand efficient, reliable performance.
PerFET devices are housed in TSC-designed, industry-standard-size (5mm x 6mm) PDFN56U (single/dual) packages whose wettable flank improves solder joint reliability and AOI accuracy during PCB assembly. The PerFETs’ low on-resistance (RDS(on)) reduces conduction losses and their very low gate charge (Qg)—optimized for high-speed communication applications—offers the most efficient solution available for 48V input DC/DC converters.
Six devices comprise the new 100V PerFET series, with single-output current ratings of 50-100A and dual-outputs rated at 31A. Target applications are 48V automotive, SMPS, server and telecom, DC-DC converters, motor drives and polarity switches. The new 80V PerFET series also offers six devices. Single-output models feature current ratings of 33-110A and 31-33A for dual-output models. In addition to those targeted by the 100V series, 80V PerFETs are suitable for ideal diodes, USB-PD and type-C charger/adapters, UPS, solar inverters, LED lighting and telecommunications power applications.
“Because our PerFET power MOSFETs are built to automotive standards, design engineers can use them to achieve automotive-grade reliability in competitively priced, non-automotive applications—while eliminating proof-of-qualification paperwork necessary when using automotive parts,” said Sam Wang, vice president, TSC Products. “By adding 80- and 100-volt devices to our PerFET family, designers have even more options for increasing efficiency and reliability in their power switching applications.”
Original – Taiwan Semiconductor
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Efficient Power Conversion introduced the EPC2367, a next-generation 100 V eGaN® FET that delivers superior performance, higher efficiency, and lower system costs for power conversion applications.
Designed for 48 V intermediate voltage bus architectures, the EPC2367 significantly advances the performance of power systems by reducing power loss, increasing efficiency, and enabling more compact and cost-effective designs. This new device sets a benchmark in performance compared to both previous-generation GaN and traditional silicon MOSFET solutions.
Key Advantages of the EPC2367
- Ultra-Low On-Resistance (RDS(on)): 1.2 mΩ, a ~ 30% improvement over previous generation best-in-class devices
- Smaller Footprint: 3.3 mm × 3.3 mm QFN package, reducing PCB space and enhancing thermal performance
- Best-in-Class Switching Figures of Merit (FoM): EPC2367 outperforms competitors in hard and soft-switching applications, delivering superior efficiency and lower power losses
- Enhanced Thermal Performance: Operates cooler under load, improving system reliability and enabling higher power densities
- Outstanding Temperature Cycling Reliability: 4× the thermal cycling capability compared to previous GaN generations, ensuring robust long-term operation
Superior In-Circuit Performance
The EPC2367 has been rigorously tested in hard and soft-switching applications. Performance results demonstrate higher efficiency across the full power range, with significant power loss reductions. In a 1 MHz, 1.25 kW system, EPC2367 reduces power losses while achieving 1.25× the output power compared to previous GaN and Si MOSFET alternatives.
The EPC2367 advances GaN technology with ultra-low on-resistance and superior thermal cycling, enabling engineers to boost efficiency and power density in AI servers, robotics, and automotive systems,
said Alex Lidow, EPC CEO and co-founder.The EPC90164 development board is a half bridge featuring the EPC2367 GaN FET. It is designed for 80 V maximum operating voltage and 35 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Original – Efficient Power Conversion
