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ROHM has announced that the EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization. Mass production of this power supply unit is set to begin in 2025.
Rapid advancements in IoT-related fields such as AI and AR (Augmented Reality) have led to a surge in global data traffic in recent years. Notably, the power consumption for a single AI-generated response is estimated to be several times higher than that of a standard Internet search, highlighting the need for more efficient AI power supplies. Meanwhile, GaN devices, known for low ON resistance and high-speed switching performance, are gaining attention for their ability to enhance power supply efficiency while reducing the size of peripheral components such as inductors used in power circuits.
Dr. Joe Liu, Technical Fellow, Murata Power Solutions
“We are pleased to have successfully designed AI server power supply units featuring higher efficiency and power density by incorporating ROHM’s GaN HEMTs. The high-speed switching capability, low parasitic capacitance, and zero reverse recovery characteristics of GaN HEMTs help minimize switching losses. This allows for higher operating frequencies in switching converters, reducing the size of magnetic components. ROHM’s GaN HEMTs deliver competitive performance and exceptional reliability, yielding excellent results in the development of Murata Power Solutions’ 5.5kW AI server power supply units. Going forward, we will continue our collaboration with ROHM, a leader in power semiconductors, to improve the efficiency of power supplies and address the social issue of increasing power demand.”
Yuhei Yamaguchi, General Manager, Power Stage Product Development Div., LSI Business Unit, ROHM Co., Ltd.
“We are delighted that ROHM’s EcoGaN™ products have been integrated into AI server power supply units from Murata Power Solutions, a global leader in power supplies. The GaN HEMTs used in this application provide industry-leading switching performance in a high heat dissipation TOLL package, enhancing power density and efficiency in Murata Power Solutions’ power supply units. We look forward to strengthening our partnership with Murata Manufacturing, a company that shares the similar vision of contributing to society through electronics – promoting the miniaturization and efficiency of power supplies to enrich people’s lives.”
Original – ROHM
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Toshiba Electronic Devices & Storage Corporation held a ceremony to mark the completion of a new back-end production facility for automotive power semiconductors at Himeji Operations – Semiconductor, in Hyogo Prefecture, western Japan. The new facility will more than double capacity against the fiscal 2022 level, and will commence full-scale production in the first half of fiscal year 2025.
The new facility is designed to promote smart factory initiatives through automation of the manufacturing process and the use of RFID tags to improve work the efficiency and accuracy of inventory management accuracy. All power requirements will be met with electricity from renewable sources, including solar panels installed on the roof of the building under a power purchase agreement.
Power devices play a crucial role in supplying and controlling electricity, and are essential for improving energy efficiency in all kinds of electrical and electronic equipment. The continuing electrification of automobiles and higher efficiency requirements for industrial equipment are expected to drive long-term demand for power semiconductors. Toshiba is responding with investments in both front-end and back-end production facilities, and will meet market growth with a stable supply of high-efficiency and high-reliability products.
The new facility more than doubles Himeji Operations’ production capacity for automotive power semiconductor against fiscal year 2022, and will reinforce its contributions to advancing carbon neutrality.
Original – Toshiba
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Infineon Technologies AG announced the addition of P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for Low-Earth-Orbit (LEO) space applications. The new devices are part of Infineon’s expanding portfolio designed for next-generation “NewSpace” applications, providing cost-optimized radiation-tolerant MOSFETs that enable engineers to achieve faster time-to-market designs using smaller and lighter weight components with radiation performance suitable for missions lasting two to five years.
“Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable rapid deployment and cost optimization,” said Chris Opoczynski, Sr. VP and General Manager, High Reliability (HiRel) Business, Power and Sensor Systems Division, Infineon . “Infineon is leveraging its 50-years of space heritage to bring an industry-first portfolio of efficient and reliable power devices to this dynamic sector of the business.”
The new 60 V P-channel MOSFET complements the already available 60 V and 150 V N-channel devices, all offered in plastic packaging, which is lower in cost than the traditional hermetic packaging used in rad-hardened devices and can be produced in higher volumes using standard manufacturing practices.
The radiation-tolerant discretes are qualified for space applications according to the relevant tests of the AEC-Q101 standard. Additional package tests such as outgas and salt atmosphere tests are included as part of the qualification, and they are rated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionizing Dose (TID) of 30 to 50 krad (Si). The operating temperature rating is -55 °C to 175 °C (maximum). State-of-the-art technologies, like the patented CoolMOS™ superjunction technology used for the N-channel MOSFETs enables Field Effect Transistors (FETs) from Infineon to offer fast switching capabilities as compared to alternative solutions.
Original – Infineon Technologies
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Alpha and Omega Semiconductor Limited (AOS) will showcase its complete line of advanced power management solutions at the Applied Power Electronics Conference (APEC). These new products offer advanced features enabling designers to meet power management challenges in several key application areas.
Booth highlights
- Datacenters, AI Server, and High-Performance Graphics Cards: AOS is showcasing two new controllers specifically designed for high-performance GPUs and SoCs used in graphics cards and AI servers. The AOZ73016QI is a 16-phase, 2-rail controller specifically designed to the latest OpenVReg16 (OVR16) specifications. The AOZ73016QI controller design is based on the company’s high-performance, proprietary AOS Advanced Transient Modulator (A2TM) control scheme. In addition to supporting all the basic requirements of the OVR16 specification, the new AOS controller offers value-added features such as RDS(on) and DCR sensing for current monitoring and balance. These features enable AOS’ controller to support DrMOS and Smart Power Stages (SPS) to deliver a complete AI server and graphic card power solution and increase design flexibility. The AOZ73016QI offers full programmability via the PMBUS interface and is also AVS bus compliant. The device features digitally programmable voltage and current regulation loops, minimizing the external components required to implement a solution. It supports electronic control system (ECS) programmability with the ability to update configuration in the field and to pre-program up to six configuration settings with a pin-strap selection. As the world’s first OVR4-22 multiphase PWM controller, the AOZ73004CQI has received full OpenVReg OVR4-22 compliance. Its advanced design helps safely throttle GPU power for maximized performance. It leverages AOS’ breakthrough control scheme that meets stringent power delivery requirements with minimum external components and offers world-class system power efficiency. When paired with AOS’ industry-leading DrMOS and Smart Power Stages, the AOZ73016QI and AOZ73004CQI form a complete solution for GPU or AI SoC power in datacenters, graphics cards, and advanced computing.
- Power Distribution Board for AI Datacenters (Power MOSFETs): AOS is showcasing an application-specific MOSFET AOTL66935 for 48V Hot Swap with High Safe Operating Area (SOA) in TOLL package, and soon available in LFPAK8x8 (AOLV66935). AOTL66935 and AOLV66935 have ultra-low RDS(on) (<1.9mOhm) and high junction temperature ratings at 175°C. AOS designed these MOSFETs with low on-state resistance and robust linear mode performance to protect AI servers and telecom equipment where performance, reliability, and quality are essential.
- High Power Motor Drive Applications: AOS has developed state-of-the-art package options for its industry-leading MOSFET portfolio. Designed to meet the increasing performance and reliability application demands, the LFPAK, GTPAK™, and GLPAK™ packages combined with AOS’ MOSFET technology deliver low ohmic, low parasitic inductance, and high current capability advantages. These packages also feature gull-wing leads, offering a rugged solution for board-level environmental stresses. These features offer key benefits in reducing losses, improving power density, lowering EMI, and enhancing board-level reliability for key applications such as e-mobility, battery management, and other high-current applications. The GTPAK offered with the AOGT66909 is designed to mount a heatsink with a large exposed pad on the package surface. The topside cooling technology effectively transfers most heat to the heatsink instead of PCB, dissipating heat more efficiently. The GLPAK offered with the AOGL66901 is designed to achieve a high inrush current rating using AOS’ advanced clip technology. The Gull-wing design enhances board-level reliability. The GLPAK with clip technology offers very low package resistance and parasitic inductance, improving EMI performance compared to other package types that employ standard wire bonding.
Original – Alpha and Omega Semiconductor
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Leapers Semiconductor has officially commenced construction of its automotive-grade third-generation power semiconductor module project in Jiangdu District’s development zone. The launch event was part of Jiangdu District’s Major Project Construction Mobilization Conference, where local officials outlined key economic initiatives for the region. District Party Secretary Zhu Lili delivered a speech at the ceremony, emphasizing the urgency of driving economic growth from the start of the year. District Mayor Shen Bohong presided over the event, with key government representatives also in attendance.
During the event, township leaders provided updates on the district’s 2025 major construction projects, reaffirming their commitment to economic development. The first quarter alone saw the initiation of 29 major projects, with a total investment of 8.72 billion yuan ($1.2 billion), spanning sectors such as new materials, renewable energy, high-end equipment, and environmental protection.
Leapers Semiconductor SiC module project, which began construction on March 1, represents a 10 billion yuan ($1.4 billion) investment, covering an area of 32 acres. Once completed, the facility is expected to achieve an annual production capacity of 3 million automotive-grade SiC modules, generate 10 billion yuan ($1.4 billion) in annual revenue, and contribute 500 million yuan ($70 million) in annual tax revenue.
With this new SiC module packaging and testing facility, Leapers Semiconductor is set to enhance production capabilities, accelerate innovation, and drive the adoption of SiC power solutions worldwide.
Original – Leapers Semiconductor
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MCC Semi revealed the latest MOSFET designed to help engineers balance efficiency and thermal performance in high-power applications. The 150V MCTL4D0N15YH boasts a remarkably low on-resistance of 4mΩ, minimizing conduction losses for optimal efficiency.
Housed in a robust TOLL package, this component features advanced split-gate trench (SGT) technology and a junction-to-case thermal resistance of 0.39K/W for superior heat dissipation.
Equipped with an operating junction temperature capability of up to 175°C, this new MOSFET is the ideal solution for demanding applications, including battery management systems, motor drives, and DC-DC converters.
Offering versatility across multiple industries, MCTL4D0N15YH enhances system performance and longevity while reducing overall energy consumption.
Features & Benefits:
- SGT Technology: Ensures outstanding electrical performance and efficiency.
- Low On-Resistance (4mΩ): Minimizes power losses, enhancing system efficiency.
- Low Conduction Losses: Reduce energy waste, optimizing energy usage.
- Low Junction-to-Case Thermal Resistance (0.39K/W): Provides excellent heat dissipation capabilities.
- High Operating Junction Temperature (up to 175°C): Delivers reliability in high-temperature environments.
Original – Micro Commercial Components
