• Navitas Semiconductor and GreatWall Join Forces on 400V DC Power Architecture for Next-Gen AI Data Centers

    Navitas Semiconductor and GreatWall Join Forces on 400V DC Power Architecture for Next-Gen AI Data Centers

    3 Min Read

    Navitas Semiconductor has announced its GaNSense power ICs will power GreatWall’s latest 2.5kW ultra-high power density DC-DC converter for AI data centers.

    The rapid development of AI has imposed higher requirements for computing power on data centers. To accommodate more GPUs for computing, the architecture of 400V independent cabinets will become a new development trend. Module power supplies with small size, high efficiency, and greater independence will free up valuable cabinet space, directly enhance computing power, reduce energy consumption, and contribute to achieving dual-carbon goals.

    Great Wall has developed an industry-leading 2.5kW DC-DC converter in 1/4 brick outline with the world’s highest power density of 92.36W/cm³, up to 8 times higher than the output power of traditional silicon designs. With a record half-load efficiency of 97.9% and a wide input range of 320-420 VDC, this solution achieves the increasingly stringent efficiency guidelines and regulations from Open Compute Project (OCP) and can be widely used in applications from AI data centers, telecommunications, and industrial equipment.

    This ultra-high power density DC-DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45 mΩ, delivers 50% more power than prior designs, in an industry-standard, low-profile, low-inductance, 8 x 8 mm PQFN package for high-efficiency, high-density power systems. GaNFast power ICs with GaNSense technology feature GaN-industry-first features such as loss-less current sensing and the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions.

    Unlike competing solutions, NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.

    “With its faster switching frequency and higher efficiency, GaN has become a key factor in unlocking the next generation of power supplies. We are very pleased to collaborate with Navitas, an industry leader in GaN technology, and successfully enable this industry-leading ultra-high-power density and ultra-high efficiency DC-DC converter,” said Michael Zhang, head of DC Product Line at Greatwall Power. “We look forward to deepening our collaboration with Navitas to unlock the application of GaN in more fields, continuously improve power supply efficiency to reduce energy consumption, and accelerate the low-carbon transformation of various industries.”

    “Navitas is deeply honored to cooperate with Great Wall Power to successfully create this ultra-high-power density 2.5 kW DC-DC converter. The profound heritage and innovative strength of Great Wall Power in the power supply field have enabled our GaNFast power ICs to fully demonstrate their advantages,’ said Charles Zha, SVP and GM of Navitas Asia-Pacific. “Navitas firmly believes that continuous cooperation with Great Wall will make GaN technology shine in multiple fields such as AI data centers and telecommunications and promote the industry to develop towards a more efficient and environmentally friendly direction.”

    Original – Navitas Semiconductor

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  • SemiQ Delivers SiC MOSFET Modules for Next-Gen EV Battery Cell Cyclers Integration

    SemiQ Delivers SiC MOSFET Modules for Next-Gen EV Battery Cell Cyclers Integration

    2 Min Read

    SemiQ Inc has begun shipping its SiC MOSFET modules for integration into advanced cell cycling systems used by several of the world’s leading battery manufacturers.

    In lithium-ion batteries, cell cyclers enable the formation of a stable solid electrolyte interphase to enable increased longevity and performance. The systems also enable battery manufacturers to perform battery degradation analysis, temperature and stress testing, and check for defects or performance issues.

    To undertake these tasks, the cyclers need to accurately charge and discharge batteries, with high switching frequencies enabling more precise control of current and voltage to avoid damage from overcharging/discharging. For this function, the MOSFETs need to withstand the thermal stress of repeated power cycling, with failure leading to test disruption and inaccurate data. Conversion efficiency is also vital in minimizing operational costs.

    SemiQ is supplying its GCMX003A120S3B1-N and the GCMX003A120S7B1 QSiC™ 1200 V SiC half-bridge modules for use in 100 kW cyclers (10 x 10 kW cells with parallel connections).

    These high-speed switching MOSFET modules are highly efficient with exceptionally low switching losses, are designed with a reliable body diode, have been tested to over 1350 V and implement a rugged design with easy mounting. Each 10 kW cell will integrate 12 modules, with 120 per 100 kW per cycler.

    Dr. Timothy Han, President at SemiQ said: “Reports show that the electrification of transportation is among the most important steps that can be taken to reach net-zero. For this, the evaluation of battery performance, durability, and efficiency plays a vital role in enabling the development of longer-range, longer-life EV batteries. We’re delighted to be working with one of the world’s leading cell cyclers and this partnership is testament to the ruggedness and efficiency of our SiC technology.”

    Datasheets for the GCMX003A120S3B1-N and GCMX003A120S7B1 modules can be downloaded via the product page, here.

    Original – SemiQ

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  • Ideal Power Delivers SSCB Prototypes Ahead of Schedule, Achieving First Design Win

    Ideal Power Delivers SSCB Prototypes Ahead of Schedule, Achieving First Design Win

    3 Min Read

    Ideal Power Inc. announced all deliverables related to the first design win for solid-state circuit breakers (SSCBs) were successfully completed three months ahead of schedule.

    In connection with the design win announced in December 2024, the Company entered into a joint development agreement for a SSCB product incorporating multiple B-TRAN® devices with one of the largest circuit protection equipment manufacturers in Asia serving the data center, renewable energy, energy storage, industrial, and utility markets. In accordance with the agreement, Ideal Power installed multiple B-TRAN® devices and related drive circuitry and controls into the customer’s SSCB prototypes.

    The replacement of SiC devices with B-TRAN® devices in their SSCB prototypes resulted in a greater than a 60% reduction in total losses and added bidirectionality. Based on testing, it was confirmed the B-TRAN®-based circuit breaker design meets or exceeds all of the customer-defined target specifications. The SSCB prototypes were then shipped to the customer for further testing and to enable them to begin marketing this new ultra-low loss breaker to their customers sooner than planned. The B-TRAN®-based solution easily fits into the customer’s existing design for a SSCB product, accelerating the time to market for their initial B-TRAN®-enabled circuit breaker product.

    “Our first design win and related joint development agreement represented significant validation of B-TRAN® as an enabling technology for solid-state circuit breakers. We are now excited to deliver the circuit breaker prototypes to this customer a full quarter ahead of schedule. This customer will be the first to offer an innovative ultra-low loss and inherently bidirectional circuit breaker to a market that has long been waiting for such a solution. We expect the marketing and successful launch of this B-TRAN®-enabled SSCB product to lead to an expanded opportunity with this customer and accelerate engagements and potentially design wins with the large global companies currently evaluating our technology for circuit protection applications. Given the size of these companies, any one of them could represent millions of dollars or more of annual revenue to us over time. A few key design wins would be enough to get us to profitability,” stated Dan Brdar, President and Chief Executive Officer of Ideal Power.

    Based on the customer’s projections, for Ideal Power, the opportunity from this customer’s first B-TRAN®-based product alone could translate to revenue of several hundred thousand dollars in its first year of sales, with the opportunity to exceed a million dollars in revenue in the second year of sales. This initial B-TRAN®-enabled SSCB will be marketed to renewable energy and energy storage equipment providers and utility electric distribution network companies.

    Ideal Power expects this product to be the first of multiple products incorporating B-TRAN® into SSCBs as the customer is interested in offering a suite of B-TRAN®-enabled SSCBs with a wide range of ratings. As a result, the overall opportunity with this customer could eventually lead to sales of a million units per year based on the customer’s projections. Other potential applications for future products with this customer include data centers, lighting and air conditioning systems, and electric vehicles, including vehicle-to-grid power conversion and EV contactors.

    Original – Ideal Power

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