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DISCO CORPORATION has made a decision to build a new manufacturing plant (Hiroshima Works Gohara Plant, hereinafter “Gohara Plant”) in the Kure City Sports Center (Gohara-cho, Kure City) that the company purchased from Kure City, Hiroshima Prefecture. Precision processing tool production is planned at the Gohara Plant, and construction of the plant is planned in three phases. This press release is a notice regarding the construction plans for phase 1.
Purpose of the New Plant
- Improved production capability
- Improved BCM capability and production efficiency
Outline of Gohara Plant’s Construction Phase 1
Address Inside Warahino mountain region, Gohara-cho, Kure-shi, Hiroshima Building area 13,179 m² Building structure Steel + Reinforced concrete, eleven stories, seismically isolated structure Total floor space 133,570 m² Building investment 33 billion yen Construction start date February 1, 2026 Construction completion date April 30, 2028 This information is regarding the building that will be constructed during phase 1 of construction. The total land area of the Gohara Plant (Kure City Sports Center) is 218,539 m²
Construction plans for phases 2 and 3 will be decided appropriately based on the situation.
Timeline of Acquiring the Kure City Sports Center
- Feb. 2023: Acquired preferential rights to negotiate with Kure City
- Nov. 2023: Officially concluded the sales contract
- Apr. 2025: Ownership transferred from Kure City to DISCO
- Acquisition amount: 2.5 billion yen
Original – DISCO
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The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality and reliability of discrete semiconductors for aerospace, defense and spaceflight applications. Microchip Technology announced its completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N7587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID).
Microchip’s JANS series of rad-hard power devices is available in voltage ranges from 100–250V to 100 Krad (Si) TID, with the family expanding to higher Radiation Hardness Assurance (RHA) levels, starting with the JANSF2N7587U3 at 300 Krad (Si) TID. The JANS RH MOSFET die is available in multiple package options including a plastic package using the MIL-qualified JANSR die, providing a cost-effective power device for New Space and Low Earth Orbit (LEO) applications. The ceramic package is hermetically sealed and developed for total dose and Single-Event-Environments (SEE).
The devices are designed to meet the MIL-PRF19500/746 standard with enhanced performance, making them excellent options for applications that demand high-reliability components capable of withstanding the harsh environments of space and extending the reliability of power circuitry.
“Meeting the stringent specifications required for rad-hard MOSFETs is extremely challenging, and Microchip is pleased to achieve this development milestone by leveraging its proprietary rad-hard by design process and technology,” said Leon Gross, corporate vice president of Microchip’s discrete products group. “Our advanced technology provides our aerospace and defense customers with highly reliable and cost-effective solutions that meet the growing demand of the market and their applications.”
The JANSF and JANSR RH power MOSFETs serve as the primary switching elements in power conversion circuits, including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching. With low RDS(ON) and a low total gate charge, these power MOSFETs offer improved energy efficiency, reduced heat generation and enhanced switching performance when compared to similar devices on the market.
Original – Microchip Technology
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Navitas Semiconductor announced the release of its latest SiCPAK™ power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritizing reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and enable stable thermal performance by reducing degradation from power and temperature variations.
Navitas’ SiCPAK™ modules demonstrated 5x lower thermal resistance increase following 1000 cycles of thermal shock testing (-40 C to + 125 C) compared to conventional silicone-gel-filled case-type modules. Furthermore, all silicone-gel-filled modules failed isolation tests while SiCPAK™ epoxy-resin potted modules maintained acceptable isolation levels.
Enabled by over 20 years of SiC innovation leadership, Navitas’ GeneSiC™ ‘trench-assisted planar SiC MOSFET technology’ provides industry-leading performance over temperature, enabling up to 20% lower losses, cooler operation, and superior robustness to support long-term system reliability.
The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, which results in the lowest power losses across a wider operating range and offers up to 20% lower RDS(ON) under in-circuit operation at high temperatures compared to competition. Additionally, all GeneSiC™ SiC MOSFETs have the highest-published 100%-tested avalanche capability, up to 30% better short-circuit withstand energy, and tight threshold voltage distributions for easy paralleling.
The 1200V SiCPAK™ power modules have built-in NTC thermistors and are available from 4.6 mΩ to 18.5 mΩ ratings in half-bridge, full-bridge, and 3L-T-NPC circuit configurations. They are pin-to-pin compatible with industry-standard press-fit modules. Additionally, optional pre-applied Thermal Interface Material (TIM) for simplified assembly is available.
Original – Navitas Semiconductor
