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Efficient Power Conversion Corporation (EPC) announced the launch of the EPC91104, a high-performance 3-phase BLDC motor drive inverter reference design. This innovative design is ideal for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements.
The EPC91104 evaluation board uses the EPC23104 ePower™ Stage IC, offering a maximum RDS(on) of 11 mΩ and supporting DC bus voltages up to 80 V. The design supports up to 14 Apk steady-state and 20 Apk pulsed current, ensuring reliable performance for humanoid robot applications that require fine motor control and precision.
Key Features of the EPC91104
- Wide Voltage Range: Operates between 14 V and 80 V, accommodating a variety of battery systems
- Compact Design: Suitable for space-constrained robotics
- Advanced Protection: Includes overcurrent and input undervoltage protection, ensuring reliability in demanding applications
- Optimized Efficiency: Low-distortion switching reduces torque ripple and motor noise
Humanoid robots demand motors with precision and compactness, and the EPC91104 is specifically designed to meet those needs for applications like small joint actuation,
said Alex Lidow, CEO of EPCFor higher-current requirements, such as elbow and knee motors in humanoid robots, EPC offers the EPC9176 board in the same family. With enhanced current capacity, the EPC9176 complements the EPC91104 to cover a full range of motor drive applications in humanoid robotics.
The EPC91104 is compatible with controller boards from leading manufacturers, including Microchip, Texas Instruments, STMicroelectronics, and Renesas, offering engineers flexibility in development. It is equipped with comprehensive sensing and protection features, ensuring rapid prototyping and testing.
Original – Efficient Power Conversion
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SemiQ Inc. announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV and road-side charging, uninterruptable power supplies, and induction heating/welding.
The high-speed QSiC™ 1700 V switching planar D-MOSFETs enable more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode, capable of operation at up to 175oC, with all components tested to beyond 1900 V, and UIL avalanche tested to 600 mJ.
The QSiC 1700 V devices are available in both a bare die form (GP2T030A170X), and as a 4-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. Both are also available in an AEC-Q101 automotive qualified version (AS2T030A170X and AS2T030A170H).
The MOSFETs deliver low switching and conduction losses, low capacitance and feature a rugged gate oxide for long-term reliability, with 100 percent of components undergoing wafer-level burn in (WLBI) to screen out potentially weak oxide devices.
SemiQ has also announced a series of three modules as part of the family to simplify system design, this includes a standard-footprint 62 mm half-bridge module housed in an S3 package with an AIN insolated baseplate, as well as two SOT-227 packaged power modules.
The QSiC 1700 V series’ bare die MOSFET comes with an aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side. Both it and the TO-247-4L packaged device have a power dissipation of 564 W, with a continuous drain current of 83 A (at 25oC, 61A at 100oC) and a pulsed drain current of 250 A (at 25oC). They also feature a gate threshold voltage of 2.7 V (at 25oC, 2.1 V at 125oC), an RDSON of 31 mΩ (at 25oC, 57 mΩ at 125oC), a low (10n A) gate source leakage current and a fast reverse recovery time (tRR) of 17 ns. The TO-247-4L package has a junction to case thermal resistance of 0.27oC per watt.
The two 4-pin power modules are housed in a 38.0 x 24.8 x 11.7 mm SOT-227 design and deliver an increased power dissipation of 652 W with an increased continuous drain current of 123 A (at 25oC – GCMX015A170S1E1) and 88 A (at 25oC GCMX030A170S1-E1). In addition to low switching losses, both modules have a low junction-to-case thermal resistance of 0.19oC and 0.36oC per watt and feature an easy-mount design for direct mounting of the isolated package to a heatsink.
The half-bridge module is housed in a 61.4 x 106.4 x 30.9 mm 9-pin S3 package and delivers a power dissipation of 2113 W with a continuous drain current of 397 A and a pulsed drain current of 700 A. In addition to low switching losses, the GCMX005A170S3B1-N module has a junction to case thermal resistance of 0.06oC per watt.
Original – SemiQ
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InnoScience (Suzhou) Technology Holding Co., Ltd. announced that it has initiated legal action to protect its intellectual property rights related to cutting-edge gallium nitride (GaN) semiconductor technologies. The Company, along with its wholly-owned subsidiary InnoScience (Suzhou) Semiconductor Co., Ltd. (“InnoScience Suzhou,” collectively referred to as the “Plaintiffs”), has filed complaints with the Intermediate People’s Court of Suzhou City, Jiangsu Province, PRC.
The lawsuits (case numbers (2024) Su 05 Minchu No. 1430 and (2024) Su 05 Minchu No. 1431) allege patent infringement against Infineon Technologies (China) Co., Ltd., Infineon Technologies (Wuxi) Co., Ltd., and Suzhou Chipswork Electronics Technologies Co., Ltd. (collectively, the “Defendants”). The patents in question, 202311774650.7 and 202211387983.X, cover innovative GaN power device designs and semiconductor manufacturing methods, for which InnoScience Suzhou is the patentee, with the Company holding the appropriate licenses.
Original – InnoScience Technology
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Soitec announced the appointment of Ruth Hernandez as Chief Sales Officer. She will join the Executive Committee with responsibility for driving Soitec’s commercial success.
With a proven track record in the semiconductor industry, Ruth Hernandez brings 25 years of experience working with major semiconductor companies such as Texas Instruments, Maxim Integrated and GlobalFoundries across five countries. She will play a key role in driving the next chapter of Soitec’s long-term growth strategy and strengthening Soitec’s customer networks.
Ruth succeeds Yvon Pastol who will leave the company on January 31, after having led the global Sales organization since August 2020.
Ruth Hernandez said: “I am honored and excited to join the Executive Committee of Soitec, a world leader in innovative semiconductor materials. After 25 years in this dynamic industry, I am thrilled to contribute to driving global impact through Soitec’s cutting-edge technologies that combine performance and energy efficiency.”
Pierre Barnabé, Chief Executive Officer of Soitec, stated: “On behalf of Soitec, I am delighted to welcome Ruth Hernandez as our new Chief Sales Officer. She brings a wealth of experience from her strategic leadership roles at several world-class semiconductor companies. I would also like to take this opportunity to extend my warm thanks to Yvon Pastol, thanking him for his commitment and significant contribution to Soitec over the years. I wish him all the best in his future endeavours.”
Original – Soitec
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STMicroelectronics has been recognized for the first time as a global Top Employer for 2025 by Top Employers Institute.
This year STMicroelectronics was one of only 17 global Top Employers to be recognized by Top Employers Institute for their outstanding HR policies and practices worldwide, covering ST entities in 41 countries. The Top Employers Institute program certifies organizations based on the participation and results of their HR Best Practices Survey. STMicroelectronics was distinguished in this ranking thanks to a continuous improvement approach and stands out particularly in the themes of Ethics & Integrity, Purpose & Values, Organization & Change, Business Strategy, and Performance.
“A couple of years ago, we began a people-centric transformation to enhance our leadership culture, simplify and digitalize people processes, with the employee journey and experience as our north star. Achieving the Top Employer Global certification confirms that our efforts are well-directed, and that ST is a place where every talent can thrive, regardless of their career stage or perspective,” said Rajita D’Souza, President, Human Resources & Corporate Social Responsibility, STMicroelectronics.
“We’re excited that STMicroelectronics certified as a global Top Employer for the first time. They have particularly showcased their strengths in areas such as Organisation & Change, Ethics & Integrity, Purpose & Values and Business Strategy. This Certification shows ST’s commitment to creating a better world of work through their HR initiatives and practices, by demonstrating how they support their colleagues across 41 countries,” said David Plink, CEO Top Employers Institute.
The Top Employers Institute survey, followed by validation and audit, covers six HR domains consisting of 20 topics including People Strategy, Work Environment, Talent Acquisition, Learning, Diversity & Inclusion, Wellbeing and more. The program has certified and recognized over 2,400 Top Employers in 125 countries/regions across five continents.
Original – STMicroelectronics
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onsemi announced that it has completed its acquisition of the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo for $115 million in cash.
The addition of SiC JFET technology will complement onsemi’s extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.
In electric vehicle applications, SiC JFETs help improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFET in battery disconnect units. In the industrial end-market, SiC JFETs enable certain energy storage topologies and solid-state circuit breakers.
“This acquisition further strengthens onsemi’s leadership in power semiconductors by providing disruptive and market leading technologies to our customers to solve their most pressing power density and efficiency problems in AI data centers, automotive and industrial markets,” said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. “We will continue to innovate and make investments to expand our technology leadership in providing the most comprehensive power system solutions.”
Original – onsemi
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NXP Semiconductors N.V. announced that it has secured a €1 billion loan from the European Investment Bank (EIB) to advance the company’s RDI investments across its broad portfolio of semiconductor solutions. The €1 billion loan facility carries an approximate interest rate of 4.75 percent when drawn in dollar denominated tranches, under the current market conditions and has a duration of six years. The financing will support NXP’s research and development efforts in several EU Member States, implemented in its facilities in Austria, France, Germany, the Netherlands and Romania for the period up to 2026.
The financing of critical European technology aligns with the EIB’s launch of a targeted “Strategic Tech-EU ” investment programme to accelerate digitalisation and innovation in strategic technologies, such as artificial intelligence, microchips, life sciences and quantum computing. Semiconductors are the fundamental building blocks critical to the digitalisation of many different industries, making them instrumental in public and private efforts to advance decarbonisation and sustainability efforts.
“It is fundamental for Europe to remain an indispensable player in the value chain of critical technologies and build RDI and production capacity in those supply chains. Luckily, the EU boasts some of the world’s most advanced chip makers. As semiconductors are key to the digital and green transitions, their importance will only grow, and the EIB proudly supports such strategic technology.”Robert de Groot, EIB Vice President
NXP research and development teams across Europe are focused on creating the next generation of automotive processors, advanced automotive radar solutions, improved energy and driver systems, in-vehicle networking, and secure car access, in addition to other equally important intelligent edge technologies such as artificial intelligence (AI), secure edge identification, Near Field Communication (NFC) wallets for mobile phones and smart wearables, and other devices which improve quality of life and further sustainability efforts.
“NXP is committed to strengthening Europe’s semiconductor ecosystem, and this significant loan from EIB aims at bolstering NXP’s efforts in research and development across many of our EU sites. NXP’s collaboration with the EIB underscores our commitment to ensuring European technology leadership and sustainability in the global semiconductor market. This loan complements the various existing instruments supporting our industry, such as the Important Projects of Common European Interest (IPCEI) and other initiatives currently being set up by the European Commission and the Member States. It is also consistent with our investment in the ESMC joint venture fab currently being built in Germany, which will address Europe’s automotive and industrial chip requirements.”Maarten Dirkzwager, Executive Vice President and Chief Strategy Officer, NXP Semiconductors
The investment will contribute to building a state-of-the-art European chip ecosystem, in-line with the EU Chips Act, the Dutch Semicon Valley and the National Technology Strategy of the Netherlands’ Government, whose scope is to strengthen the semiconductor market in the EU to ensure a secure and competitive supply of chips. Apart from the pure research and development of new power electronics devices, microprocessors and microcontrollers, NXP will also focus on the energy efficiency of its devices.
Original – NXP Semiconductors
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Wolfspeed, Inc. announced that it has completed the offering of shares of its common stock under its previously announced “at the market” offering program pursuant to a shelf registration statement filed with the U.S. Securities and Exchange Commission and a prospectus supplement, dated December 9, 2024.
Through the program, the Company sold 27,793,535 shares of its common stock for gross proceeds of approximately $200 million. Wolfspeed intends to use the net proceeds from the ATM Program to improve its capital structure, reduce leverage, and address outstanding maturities on its balance sheet.
Tom Werner, Executive Chairman of Wolfspeed, commented, “When I became Executive Chairman of Wolfspeed, completing our CHIPS Act funding process was a top priority of mine and today’s news marks an important milestone in that regard. With the ATM Program completed, we are now one step closer to finalizing our PMT and receiving our first funding disbursements from the CHIPS office and our other lenders. We look forward to continued collaboration with the CHIPS office to make sure the transition from silicon to silicon carbide is driven by American innovation, with American IP at the forefront.”
Original – Wolfspeed
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Infineon Technologies AG has broken ground for a new semiconductor backend production site in Samut Prakan, south of Bangkok, optimizing and further diversifying its manufacturing footprint. After an official meeting with the Prime Minister of Thailand, Paetongtarn Shinawatra, at the Government House, Infineon’s Chief Operations Officer Dr. Rutger Wijburg launched the construction of the new fab.
The first building is planned to be ready for operations at the beginning of 2026. Further ramp-up will be managed flexibly in line with market demand. For 2025, all expenditures of the new site are already included in the Capex projections of the company. The project is supported by the Thailand Board of Investment (BOI). The highly automated fab will play a crucial role in diversifying Infineon’s manufacturing landscape as global decarbonization and climate protection efforts drive demand for power modules, e.g. in industrial applications and renewables.
“As decarbonization and digitalization are strong structural growth drivers for the semiconductor industry, we are establishing a state-of-the-art backend fab in Thailand to meet future customer demand and strengthen supply chain resilience. This investment is a key step in our strategy to further diversify our manufacturing footprint and optimize it in terms of costs, while matching the expansion of our frontend capacities,” said Rutger Wijburg, COO of Infineon. “Our new backend site is designed to operate with high efficiency, resilience and quality, ensuring that we can reliably deliver high-quality products to our customers.”
“The Thailand Board of Investment welcomes and supports the Infineon Technologies decision to invest in a new backend fab in Samut Prakan, Thailand. This strategic step underscores the importance of a close and reliable partnership between Infineon and the government of Thailand, and demonstrates the mutual confidence in Thailand’s business environment and growth potential. The establishment of the National Semiconductor and Advanced Electronics Policy Committee in December 2024, along with Infineon’s investment, will significantly enhance the regional semiconductor industry and ecosystem, positioning Thailand as a key player in the global semiconductor industry. We are committed to supporting the development of Thailand’s electronics industry as well as the successful implementation of the expansion of Infineon’s manufacturing site in the region,” said Narit Therdsteerasukdi, the BOI’s Secretary General.
Infineon will support developing a robust semiconductor ecosystem in Thailand, centrally located in Southeast Asia, covering key components and materials in the supply chain. By enhancing partnerships with local businesses and institutions, the company will strengthen the semiconductor ecosystem and the development of a skilled work force. Through close collaboration with universities and local entrepreneurs, Infineon helps to grow a talent pool of highly skilled engineers with expertise in advanced semiconductors. A comprehensive training and education program to improve competencies in AI, digitalization and automation has been developed. The first group of Thai engineers successfully completed this training program at other Infineon sites.
As Infineon is committed to achieve climate neutrality by 2030, decarbonization efforts are an integral part of design and construction of the new facilities. Continuously reducing its own carbon footprint along the entire value chain is a strategic priority of the company. The new site will be equipped with solar modules, generating its own renewable energy. Moreover, Infineon will closely collaborate with local energy suppliers to ensure a reliable and green power supply.
Original – Infineon Technologies
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Littelfuse, Inc. announced that David (“Dave”) Heinzmann, President and Chief Executive Officer, has informed the Board of Directors of his intention to retire as President and CEO. The Board has appointed Dr. Greg Henderson, a member of the Littelfuse Board of Directors, as President and Chief Executive Officer effective February 10, 2025. Mr. Heinzmann will remain on the Littelfuse Board through April 2025 and, to support a seamless transition, serve as an advisor to the Company through August 10, 2025.
Gordon Hunter, Littelfuse Chairman of the Board, commented, “On behalf of the Board of Directors, I want to thank Dave for his 40 years of distinguished leadership and substantial contributions across numerous roles. As CEO, Dave has been an exceptional leader and his passion for Littelfuse, our people, and our customers has been instrumental in guiding the Company’s growth, innovations, and industry impact.”
Regarding Greg Henderson’s appointment as President and CEO, Mr. Hunter added, “Greg brings a wealth of experience across our industry, end markets and technologies, as well as broad familiarity with Littelfuse through his service as a member of our Board of Directors. Greg has a strong track record of value creation as well as extensive technical skills and management experience, most recently leading Analog Devices’ Automotive & Energy, Communications, and Aerospace Group. Greg has been a thoughtful voice on our board, and I am confident he is well prepared to lead Littelfuse into its next chapter of growth and success.”
Mr. Heinzmann said, “It has been a privilege to lead Littelfuse for the past 8 years, and I want to thank our customers, associates, and shareholders for their ongoing support. I am proud of the team and culture we have built, and what we have accomplished executing our growth strategy over this time. I’m confident Greg will continue to build on this success, as he has the ideal skillset and experience to lead our company in our next stage of growth. I look forward to supporting him through this transition.”
“I am honored to lead this great company,” said Dr. Henderson. “Littelfuse has an extensive track record of product leadership and technology innovation, driving meaningful growth and success over its 98-year history. I am excited to help steward the next phase of the Littelfuse growth journey alongside our talented global teams. I look forward to building on the strong foundation that Dave and the leadership team have established as we enable the future needs of our diverse customer base across our broad end markets.”
With the CEO transition taking effect on February 10, 2025, the Company has made the decision to postpone the previously planned February 26, 2025, Investor Day to a later date.
About Greg Henderson
Dr. Greg Henderson, 56, has been a member of the Littelfuse Board of Directors since May 2023. From 2017 to 2024, Dr. Henderson served as the Senior Vice President of the Automotive & Energy, Communications, and Aerospace Group for Analog Devices, Inc. (NASDAQ: ADI), a semiconductor company specializing in data conversion, signal processing and power management technology.
Previously, he served as Vice President of the RF and Microwave Business for Analog Devices from 2014 to 2017, and as Vice President of the RF and Microwave Business for Hittite Microwave Corporation until its acquisition by Analog Devices in 2014. Before joining Hittite, Dr. Henderson held various positions of increasing technical and leadership responsibility at Harris Corporation, Tyco Electronics, TriQuint Semiconductor, and IBM (NYSE: IBM). Dr. Henderson holds a bachelor’s degree in electrical engineering from Texas Tech University and a Ph.D. in electrical engineering from the Georgia Institute of Technology.
Original – Littelfuse
